Publications
2021 |
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A. Morlier Photovoltaikmodule mit Naturmaterialien für die Bauwerkintegration Presentation/Poster Online Event, 26.05.2021, (37. PV-Symposium). @misc{Morlier2021,
title = {Photovoltaikmodule mit Naturmaterialien für die Bauwerkintegration}, author = {A Morlier}, year = {2021}, date = {2021-05-26}, address = {Online Event}, note = {37. PV-Symposium}, keywords = {BIPV}, pubstate = {published}, tppubtype = {presentation} } |
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M. Stöhr, J. Aprojanz, R. Brendel, and T. Dullweber Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells Journal Article ACS Applied Energy Materials 4 (5), 4646–4653, (2021). Abstract | Links | BibTeX | Tags: blistering, firing stability, passivating contacts, PECVD deposition, silicon solar cells, SiOxNy/poly-Si @article{Stöhr2021,
title = {Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells}, author = {M Stöhr and J Aprojanz and R Brendel and T Dullweber}, doi = {10.1021/acsaem.1c00265}, year = {2021}, date = {2021-05-24}, journal = {ACS Applied Energy Materials}, volume = {4}, number = {5}, pages = {4646–4653}, publisher = {American Chemical Society}, abstract = {Passivating contacts based on SiOx/poly-Si exhibit excellent contact and surface passivation properties enabling very high solar cell conversion efficiencies. In this paper, we investigate and optimize the plasma-enhanced chemical vapor deposition (PECVD) of SiOxNy/n-a-Si stacks, their subsequent annealing to SiOxNy/n-poly-Si stacks followed by PECVD SiNx deposition and firing. We eliminate blistering of the poly-Si layer by enabling a controlled hydrogen out-diffusion during the annealing step. Whereas the J0 of thermal SiOx/n-poly-Si stacks degrade after firing, PECVD SiOxNy/n-poly-Si stacks exhibit excellent firing stability enabling J0 values down to 1.3 fA/cm2 after firing which corresponds to an outstanding implied VOC of 744 mV. The application of different hydrogenation processes to the thermal SiOx/n-poly-Si and PECVD SiOxNy/n-poly-Si stacks reveals that both stacks achieve excellent passivation properties with J0 = 1.5 fA/cm2 after maximum hydrogenation. However, only the PECVD SiOxNy/n-poly-Si stack maintains this excellent surface passivation after firing possibly due to a superior capability to retain the hydrogen at the c-Si/SiOxNy interface during firing and thus demonstrates the potential as a future manufacturing process sequence.}, keywords = {blistering, firing stability, passivating contacts, PECVD deposition, silicon solar cells, SiOxNy/poly-Si}, pubstate = {published}, tppubtype = {article} } Passivating contacts based on SiOx/poly-Si exhibit excellent contact and surface passivation properties enabling very high solar cell conversion efficiencies. In this paper, we investigate and optimize the plasma-enhanced chemical vapor deposition (PECVD) of SiOxNy/n-a-Si stacks, their subsequent annealing to SiOxNy/n-poly-Si stacks followed by PECVD SiNx deposition and firing. We eliminate blistering of the poly-Si layer by enabling a controlled hydrogen out-diffusion during the annealing step. Whereas the J0 of thermal SiOx/n-poly-Si stacks degrade after firing, PECVD SiOxNy/n-poly-Si stacks exhibit excellent firing stability enabling J0 values down to 1.3 fA/cm2 after firing which corresponds to an outstanding implied VOC of 744 mV. The application of different hydrogenation processes to the thermal SiOx/n-poly-Si and PECVD SiOxNy/n-poly-Si stacks reveals that both stacks achieve excellent passivation properties with J0 = 1.5 fA/cm2 after maximum hydrogenation. However, only the PECVD SiOxNy/n-poly-Si stack maintains this excellent surface passivation after firing possibly due to a superior capability to retain the hydrogen at the c-Si/SiOxNy interface during firing and thus demonstrates the potential as a future manufacturing process sequence.
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B. Lim Research and Innovation for expanding solar power generation without expanding land use Presentation/Poster Online Event, 20.05.2021, (‘Solar PV Big & Beyond’ – Delivering the 2030 Climate Targets (ETIP PV Annual Conference)). BibTeX | Tags: integrated PV @misc{Lim2021c,
title = {Research and Innovation for expanding solar power generation without expanding land use}, author = {B Lim}, year = {2021}, date = {2021-05-20}, address = {Online Event}, note = {‘Solar PV Big & Beyond’ – Delivering the 2030 Climate Targets (ETIP PV Annual Conference)}, keywords = {integrated PV}, pubstate = {published}, tppubtype = {presentation} } |
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R. Niepelt Grüner Wasserstoff aus Solar-Wind-Hybridkraftwerken in Norddeutschland Presentation/Poster Online Event, 19.05.2021, (37. PV-Symposium). BibTeX | Tags: Wasserstoff @misc{Niepelt2021,
title = {Grüner Wasserstoff aus Solar-Wind-Hybridkraftwerken in Norddeutschland}, author = {R Niepelt}, year = {2021}, date = {2021-05-19}, address = {Online Event}, note = {37. PV-Symposium}, keywords = {Wasserstoff}, pubstate = {published}, tppubtype = {presentation} } |
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F. Hüsing Solare Regeneration von Erdwärmequellen Presentation/Poster Online Event, 18.05.2021, (Online-Workshopreihe „Geothermie und Wärmepumpe“). BibTeX | Tags: Geothermie @misc{Hüsing2021b,
title = {Solare Regeneration von Erdwärmequellen}, author = {F Hüsing}, year = {2021}, date = {2021-05-18}, address = {Online Event}, note = {Online-Workshopreihe „Geothermie und Wärmepumpe“}, keywords = {Geothermie}, pubstate = {published}, tppubtype = {presentation} } |
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R. Brendel Was ändert importierter grüner Wasserstoff am erforderlichen PV-Ausbau? Presentation/Poster Online Event, 18.05.2021, (37. PV-Symposium). BibTeX | Tags: Wasserstoff @misc{Brendel2021,
title = {Was ändert importierter grüner Wasserstoff am erforderlichen PV-Ausbau?}, author = {R Brendel}, year = {2021}, date = {2021-05-18}, address = {Online Event}, note = {37. PV-Symposium}, keywords = {Wasserstoff}, pubstate = {published}, tppubtype = {presentation} } |
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W. E. McMahon, H. Schulte-Huxel, J. Buencuerpo, J. F. Geisz, M. S. Young, T. R. Klein, A. C. Tamboli, and E. L. Warren Homogenous Voltage-Matched Strings Using Three-Terminal Tandem Solar Cells: Fundamentals and End Losses Journal Article Forthcoming IEEE Journal of Photovoltaics 1-9, Forthcoming. Abstract | Links | BibTeX | Tags: Cell stringing, tandem cells, three-terminal, voltage-matched (VM) @article{McMahon2021,
title = {Homogenous Voltage-Matched Strings Using Three-Terminal Tandem Solar Cells: Fundamentals and End Losses}, author = {W E McMahon and H Schulte-Huxel and J Buencuerpo and J F Geisz and M S Young and T R Klein and A C Tamboli and E L Warren}, doi = {10.1109/JPHOTOV.2021.3068325}, year = {2021}, date = {2021-05-12}, journal = {IEEE Journal of Photovoltaics}, pages = {1-9}, abstract = {Strings constructed from three-terminal tandem (3TT) solar cells offer the performance benefits of voltage-matching (which reduces sensitivity to spectral variation), but without the subcell voltage isolation required by four-terminal cells. However, the circuitry for a 3TT string can become complex, making circuit analysis more challenging. Here, we illustrate the essential features of “homogenous” voltage-matched (VM) 3TT strings, for which all 3TT cells in the string are nominally identical (with the same design/doping sequence, such that they can be fabricated on the same manufacturing line). Several representative VM string configurations are explicitly considered, and used to describe the general construction of string I(V) curves. End losses intrinsic to these strings are discussed in detail, along with mitigation strategies to minimize their impact. Our analysis agrees with experimental results for eight-cell strings constructed from GaInP/GaAs 3TT devices.}, keywords = {Cell stringing, tandem cells, three-terminal, voltage-matched (VM)}, pubstate = {forthcoming}, tppubtype = {article} } Strings constructed from three-terminal tandem (3TT) solar cells offer the performance benefits of voltage-matching (which reduces sensitivity to spectral variation), but without the subcell voltage isolation required by four-terminal cells. However, the circuitry for a 3TT string can become complex, making circuit analysis more challenging. Here, we illustrate the essential features of “homogenous” voltage-matched (VM) 3TT strings, for which all 3TT cells in the string are nominally identical (with the same design/doping sequence, such that they can be fabricated on the same manufacturing line). Several representative VM string configurations are explicitly considered, and used to describe the general construction of string I(V) curves. End losses intrinsic to these strings are discussed in detail, along with mitigation strategies to minimize their impact. Our analysis agrees with experimental results for eight-cell strings constructed from GaInP/GaAs 3TT devices.
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F. Hüsing WPP-SYS – Wärmepumpenprüfung im System Presentation/Poster Online Event, 04.05.2021, (Online-Workshopreihe „Geothermie und Wärmepumpe“). BibTeX | Tags: Wärmepumpe @misc{Hüsing2021,
title = {WPP-SYS – Wärmepumpenprüfung im System}, author = {F Hüsing}, year = {2021}, date = {2021-05-04}, address = {Online Event}, note = {Online-Workshopreihe „Geothermie und Wärmepumpe“}, keywords = {Wärmepumpe}, pubstate = {published}, tppubtype = {presentation} } |
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R. C. Whitehead, K. T. VanSant, E. L. Warren, J. Buencuerpo, M. Rienäcker, R. Peibst, J. F. Geisz, and A. C. Tamboli Optimization of four terminal rear heterojunction GaAs on Si interdigitated back contact tandem solar cells Journal Article Applied Physics Letters 118 (18), 183902, (2021). Abstract | Links | BibTeX | Tags: Heterostructures, Photoconversion efficiency, Renewable energy, semiconductors, Solar Cells, solar energy @article{Whitehead2021,
title = {Optimization of four terminal rear heterojunction GaAs on Si interdigitated back contact tandem solar cells}, author = {R C Whitehead and K T VanSant and E L Warren and J Buencuerpo and M Rienäcker and R Peibst and J F Geisz and A C Tamboli}, doi = {10.1063/5.0049097}, year = {2021}, date = {2021-05-03}, journal = {Applied Physics Letters}, volume = {118}, number = {18}, pages = {183902}, abstract = {High-efficiency, four-terminal tandem solar cells composed of thin GaAs films mechanically stacked onto interdigitated back contact silicon solar cells with a glass interlayer are demonstrated. The optimal thickness of the absorber layer of a rear heterojunction GaAs subcell for use in four terminal tandem solar cells was studied. GaAs top cells with absorber layer thicknesses of 1.5, 1.9, 2.3, 2.8, and 3.5 μm were fabricated on glass and mechanically stacked onto interdigitated back-contact Si bottom cells. All tandem cells were found to have efficiencies above 30% under the AM1.5 G spectrum demonstrating a relatively weak sensitivity to thickness in the four-terminal configuration. We found the 2.8 μm absorber layer cell to have the highest top cell and tandem cell efficiency at 26.38% and 32.57%, respectively. Optical modeling with transfer matrix method for the planar top cell and Lambertian light trapping in the textured Si subcell, along with drift-diffusion Hovel equations, were used to show photon recycling enhancement to the effective diffusion length and VOC of the top cell as a result of the low-index glass interlayer.}, keywords = {Heterostructures, Photoconversion efficiency, Renewable energy, semiconductors, Solar Cells, solar energy}, pubstate = {published}, tppubtype = {article} } High-efficiency, four-terminal tandem solar cells composed of thin GaAs films mechanically stacked onto interdigitated back contact silicon solar cells with a glass interlayer are demonstrated. The optimal thickness of the absorber layer of a rear heterojunction GaAs subcell for use in four terminal tandem solar cells was studied. GaAs top cells with absorber layer thicknesses of 1.5, 1.9, 2.3, 2.8, and 3.5 μm were fabricated on glass and mechanically stacked onto interdigitated back-contact Si bottom cells. All tandem cells were found to have efficiencies above 30% under the AM1.5 G spectrum demonstrating a relatively weak sensitivity to thickness in the four-terminal configuration. We found the 2.8 μm absorber layer cell to have the highest top cell and tandem cell efficiency at 26.38% and 32.57%, respectively. Optical modeling with transfer matrix method for the planar top cell and Lambertian light trapping in the textured Si subcell, along with drift-diffusion Hovel equations, were used to show photon recycling enhancement to the effective diffusion length and VOC of the top cell as a result of the low-index glass interlayer.
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F. Haase, B. Min, C. Hollemann, J. Krügener, R. Brendel, and R. Peibst Progress in Photovoltaics: Research and Applications 29 (5), 516-523, (2021). Abstract | Links | BibTeX | Tags: IBC solar cells, local Al-p+, passivating contacts, POLO @article{Haase2021,
title = {Fully screen-printed silicon solar cells with local Al-p+ and n-type POLO interdigitated back contacts with a VOC of 716 mV and an efficiency of 23%}, author = {F Haase and B Min and C Hollemann and J Krügener and R Brendel and R Peibst}, doi = {10.1002/pip.3399}, year = {2021}, date = {2021-05-01}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {29}, number = {5}, pages = {516-523}, abstract = {We demonstrate the fabrication of a fully screen-printed p-type silicon solar cell with local hole-collecting Al-alloyed (Al-p+) contacts with a record open circuit voltage of 716 mV. The solar cell is fabricated by using almost the same process equipment as PERC cells. One of the dominant recombination losses in PERC cells is the recombination in the passivated and in the contacted emitter regions that so far limit the open circuit voltage to values below 700 mV. We eliminate these loss channels by substituting the P-diffused emitter by a passivating n-type poly-Silicon on Oxide (nPOLO) contact. We place this contact on the rear side because of its otherwise strong parasitic absorption. The Al-p+ contacts are also located at the rear side to avoid front-side shading. This results in a POLO-IBC cell structure. The efficiency of the best cell so far is 23.0% with a designated area of 4 cm2 fabricated on a M2-sized wafer. Scanning electron microscopy reveals an Al-p+ thickness of less than 3.3 μm and only a few 100 nm at the contact ends, which is less than the 5 μm typically for optimized Al-p+ contacts. A comparison of measured and simulated current-voltage curves over a variation of the contact fraction extracts a high saturation current density of the Al-p+ contact of J0-Al -p+ = 2,250 fA cm−2 for the current screen-print conditions and Al-paste causing an absolute efficiency loss of 0.5%abs. The recombination at the AlOx/SiNy surface and the shunt resistance limits the cell by 0.6%abs each.}, keywords = {IBC solar cells, local Al-p+, passivating contacts, POLO}, pubstate = {published}, tppubtype = {article} } We demonstrate the fabrication of a fully screen-printed p-type silicon solar cell with local hole-collecting Al-alloyed (Al-p+) contacts with a record open circuit voltage of 716 mV. The solar cell is fabricated by using almost the same process equipment as PERC cells. One of the dominant recombination losses in PERC cells is the recombination in the passivated and in the contacted emitter regions that so far limit the open circuit voltage to values below 700 mV. We eliminate these loss channels by substituting the P-diffused emitter by a passivating n-type poly-Silicon on Oxide (nPOLO) contact. We place this contact on the rear side because of its otherwise strong parasitic absorption. The Al-p+ contacts are also located at the rear side to avoid front-side shading. This results in a POLO-IBC cell structure. The efficiency of the best cell so far is 23.0% with a designated area of 4 cm2 fabricated on a M2-sized wafer. Scanning electron microscopy reveals an Al-p+ thickness of less than 3.3 μm and only a few 100 nm at the contact ends, which is less than the 5 μm typically for optimized Al-p+ contacts. A comparison of measured and simulated current-voltage curves over a variation of the contact fraction extracts a high saturation current density of the Al-p+ contact of J0-Al -p+ = 2,250 fA cm−2 for the current screen-print conditions and Al-paste causing an absolute efficiency loss of 0.5%abs. The recombination at the AlOx/SiNy surface and the shunt resistance limits the cell by 0.6%abs each.
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B. Lim Hausaufgaben der Photovoltaik-Technologieentwicklung – Optimale Flächennutzung, nahtlose Integration, weiter sinkende Kosten Presentation/Poster Online Event, 23.04.2021, (Photovoltaiktechnologien - aktueller Stand und Ausblick (Sächsische Energieagentur – SAENA GmbH)). @misc{Lim2021b,
title = {Hausaufgaben der Photovoltaik-Technologieentwicklung – Optimale Flächennutzung, nahtlose Integration, weiter sinkende Kosten}, author = {B Lim}, year = {2021}, date = {2021-04-23}, address = {Online Event}, note = {Photovoltaiktechnologien - aktueller Stand und Ausblick (Sächsische Energieagentur – SAENA GmbH)}, keywords = {PV}, pubstate = {published}, tppubtype = {presentation} } |
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R. Peibst Towards 28 %-Efficient Si Single Junction Solar Cells with Better Passivating POLO Junctions Presentation/Poster Online Event, 22.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). @misc{Peibst2021,
title = {Towards 28 %-Efficient Si Single Junction Solar Cells with Better Passivating POLO Junctions}, author = {R Peibst}, year = {2021}, date = {2021-04-22}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {POLO}, pubstate = {published}, tppubtype = {presentation} } |
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C. Hollemann Influence of Firing on the Interface State Density of n-Type Poly-Si Passivating Contacts Presentation/Poster Online Event, 22.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). @misc{Hollemann2021,
title = {Influence of Firing on the Interface State Density of n-Type Poly-Si Passivating Contacts}, author = {C Hollemann}, year = {2021}, date = {2021-04-22}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {POLO}, pubstate = {published}, tppubtype = {presentation} } |
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N. Folchert Modelling the Annealing of Poly-Si/SiOx/c-Si Junctions Presentation/Poster Online Event, 22.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). @misc{Folchert2021b,
title = {Modelling the Annealing of Poly-Si/SiOx/c-Si Junctions}, author = {N Folchert}, year = {2021}, date = {2021-04-22}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {POLO}, pubstate = {published}, tppubtype = {presentation} } |
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H. Wagner-Mohnsen Machine Learning for Optimizing Mass-Produced Industrial PERC Solar Cells Presentation/Poster Online Event, 22.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). BibTeX | Tags: Machine Learning @misc{Wagner-Mohnsen2021,
title = {Machine Learning for Optimizing Mass-Produced Industrial PERC Solar Cells}, author = {H Wagner-Mohnsen}, year = {2021}, date = {2021-04-22}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {Machine Learning}, pubstate = {published}, tppubtype = {presentation} } |
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L. Helmich Impact of Hydrogen on the Boron-oxygen Degradation and Regeneration Kinetics Presentation/Poster Online Event, 21.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). @misc{Helmich2021,
title = {Impact of Hydrogen on the Boron-oxygen Degradation and Regeneration Kinetics}, author = {L Helmich}, year = {2021}, date = {2021-04-21}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {Hydrogen}, pubstate = {published}, tppubtype = {presentation} } |
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D. Bredemeier Fast Calculation of Large-Scale Photovoltaic Roof-Top Potentials Using Backwards-Raytracing and Machine Learning Presentation/Poster Online Event, 21.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). BibTeX | Tags: raytracing @misc{Bredemeier2021,
title = {Fast Calculation of Large-Scale Photovoltaic Roof-Top Potentials Using Backwards-Raytracing and Machine Learning}, author = {D Bredemeier}, year = {2021}, date = {2021-04-21}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {raytracing}, pubstate = {published}, tppubtype = {presentation} } |
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M. Rienäcker Measuring Selectivity and Extraction Efficiency: the Three-Terminal Suns-VOC Method Applied to an n-c-Si/SiOy/TiOx/Al Junction Presentation/Poster Online Event, 20.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). BibTeX | Tags: selectivity @misc{Rienäcker2021,
title = {Measuring Selectivity and Extraction Efficiency: the Three-Terminal Suns-VOC Method Applied to an n-c-Si/SiOy/TiOx/Al Junction}, author = {M Rienäcker}, year = {2021}, date = {2021-04-20}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {selectivity}, pubstate = {published}, tppubtype = {presentation} } |
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N. Folchert Easy-to-Apply Contact Resistance Measurements of the Interfacial Oxide in Poly-Si/SiOx/c-Si Junctions – Revisiting the Cox & Strack Formula Presentation/Poster Online Event, 20.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). @misc{Folchert2021,
title = {Easy-to-Apply Contact Resistance Measurements of the Interfacial Oxide in Poly-Si/SiOx/c-Si Junctions – Revisiting the Cox & Strack Formula }, author = {N Folchert}, year = {2021}, date = {2021-04-20}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {POLO}, pubstate = {published}, tppubtype = {presentation} } |
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B. Min Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes Presentation/Poster Online Event, 20.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). @misc{Min2021b,
title = {Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes}, author = {B Min}, year = {2021}, date = {2021-04-20}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {POLO BJ}, pubstate = {published}, tppubtype = {presentation} } |
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S. Baumann Influence of Encapsulation Process Temperature on the Performance of Perovskite Mini Modules Presentation/Poster Online Event, 20.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). BibTeX | Tags: Modules, perovskite @misc{Baumann2021,
title = {Influence of Encapsulation Process Temperature on the Performance of Perovskite Mini Modules}, author = {S Baumann}, year = {2021}, date = {2021-04-20}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {Modules, perovskite}, pubstate = {published}, tppubtype = {presentation} } |
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M. Winter Understanding Light-Induced Degradation Effects in Ga-doped Cz-Si and B-doped FZ-Si Materials Presentation/Poster Online Event, 20.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). @misc{Winter2021,
title = {Understanding Light-Induced Degradation Effects in Ga-doped Cz-Si and B-doped FZ-Si Materials}, author = {M Winter}, year = {2021}, date = {2021-04-20}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {Ga, LID}, pubstate = {published}, tppubtype = {presentation} } |
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M. Winter, D. C. Walter, and J. Schmidt Carrier Lifetime Degradation and Regeneration in Gallium- and Boron-Doped Monocrystalline Silicon Materials Journal Article Forthcoming IEEE Journal of Photovoltaics 1-7, Forthcoming. Abstract | Links | BibTeX | Tags: Carrier lifetime, Degradation, gallium, light-induced degradation (LID), regeneration, Silicon (Si) @article{Winter2021b,
title = {Carrier Lifetime Degradation and Regeneration in Gallium- and Boron-Doped Monocrystalline Silicon Materials}, author = {M Winter and D C Walter and J Schmidt}, doi = {10.1109/JPHOTOV.2021.3070474}, year = {2021}, date = {2021-04-20}, journal = {IEEE Journal of Photovoltaics}, pages = {1-7}, abstract = {In this article, carrier lifetime degradation phenomena on fired gallium-doped Czochralski-grown silicon (Cz-Si:Ga) and boron-doped float-zone silicon (FZ-Si:B) are observed. We examine lifetime degradation and regeneration as a function of illumination intensity and temperature and observe qualitatively similar degradation effects in both material classes, which are triggered by a fast-firing high-temperature step. Charge carrier injection, e.g., through illumination, is required to activate the defects responsible for degradation. The extent of degradation increases with increasing temperature, which is untypical for degradation effects reported before. Despite different degradation time constants are measured for Cz-Si:Ga and FZ-Si:B, the activation energies are for both materials in the narrow range (0.58±0.04) eV . The extracted activation energy is quite different compared with other degradation effects in silicon, suggesting a novel defect formation mechanism. Since the lifetime degradation is triggered by the fast-firing of the silicon wafers during the presence of a hydrogen-rich dielectric at the surface, the involvement of hydrogen in the defect reaction is very likely. During prolonged illumination at elevated temperature (135 °C), we observe a permanent regeneration of the lifetime, whereas at temperatures close to room temperature (36 °C), the defect deactivation is only temporary.}, keywords = {Carrier lifetime, Degradation, gallium, light-induced degradation (LID), regeneration, Silicon (Si)}, pubstate = {forthcoming}, tppubtype = {article} } In this article, carrier lifetime degradation phenomena on fired gallium-doped Czochralski-grown silicon (Cz-Si:Ga) and boron-doped float-zone silicon (FZ-Si:B) are observed. We examine lifetime degradation and regeneration as a function of illumination intensity and temperature and observe qualitatively similar degradation effects in both material classes, which are triggered by a fast-firing high-temperature step. Charge carrier injection, e.g., through illumination, is required to activate the defects responsible for degradation. The extent of degradation increases with increasing temperature, which is untypical for degradation effects reported before. Despite different degradation time constants are measured for Cz-Si:Ga and FZ-Si:B, the activation energies are for both materials in the narrow range (0.58±0.04) eV . The extracted activation energy is quite different compared with other degradation effects in silicon, suggesting a novel defect formation mechanism. Since the lifetime degradation is triggered by the fast-firing of the silicon wafers during the presence of a hydrogen-rich dielectric at the surface, the involvement of hydrogen in the defect reaction is very likely. During prolonged illumination at elevated temperature (135 °C), we observe a permanent regeneration of the lifetime, whereas at temperatures close to room temperature (36 °C), the defect deactivation is only temporary.
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F. Haase 23%-Efficient Screen-Printed IBC Cells on Cz-Grown Silicon with n-Type Poly-Si Passivating Contact and Al-alloyed p-Type Contact Presentation/Poster Online Event, 19.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). @misc{Haase2021b,
title = {23%-Efficient Screen-Printed IBC Cells on Cz-Grown Silicon with n-Type Poly-Si Passivating Contact and Al-alloyed p-Type Contact}, author = {F Haase}, year = {2021}, date = {2021-04-19}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {IBC, POLO}, pubstate = {published}, tppubtype = {presentation} } |
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C. Schinke Measuring the Spectral Irradiance of Solar Simulators Presentation/Poster Online Event, 19.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics). BibTeX | Tags: Spectral Irradiance @misc{Schinke2021b,
title = {Measuring the Spectral Irradiance of Solar Simulators}, author = {C Schinke}, year = {2021}, date = {2021-04-19}, address = {Online Event}, note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics}, keywords = {Spectral Irradiance}, pubstate = {published}, tppubtype = {presentation} } |