Publications

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2017

C. Gemmel, J. Hensen, S. Kajari-Schröder, and R. Brendel

4.5 ms Effective Carrier Lifetime in Kerfless Epitaxial Silicon Wafers From the Porous Silicon Process Journal Article

IEEE Journal of Photovoltaics 7 (2), 430-436, (2017), ISSN: 2156-3381.

Abstract | Links | BibTeX | Tags: charge carrier lifetime, Epitaxial growth, Epitaxy, Gettering, minority carrier lifetime, porous silicon (PSI), silicon, Substrates, Surface treatment, Temperature measurement

M. R. Vogt, H. Schulte-Huxel, M. Offer, S. Blankemeyer, R. Witteck, M. Köntges, K. Bothe, and R. Brendel

Reduced module operating temperature and increased yield of modules with PERC instead of Al-BSF solar cells Journal Article

IEEE Journal of Photovoltaics 7 (1), 44-50, (2017), ISSN: 2156-3381.

Abstract | Links | BibTeX | Tags: Glass, Mathematical model, Nominal operating cell temperature (NOCT), operating temperature, passivated emitter rear cell (PERC), photovoltaic (PV) module, Photovoltaic cells, PV module thermal properties, ray tracing, silicon, Temperature measurement, Temperature sensors, Thermal conductivity

2016

J. Krügener, D. Tetzlaff, Y. Larionova, Y. Barnscheidt, S. Reiter, M. Turcu, R. Peibst, J. -D. Kähler, and T. Wietler

Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells Inproceedings

IEEE (Ed.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6.

Abstract | Links | BibTeX | Tags: Annealing, boron, Conductivity, Junctions, Resistance, silicon, Temperature measurement

J. Krügener, Y. Larionova, B. Wolpensinger, D. Tetzlaff, S. Reiter, M. Turcu, R. Peibst, J. -D. Kähler, and T. Wietler

Dopant diffusion from p+-poly-Si into c-Si during thermal annealing Inproceedings

IEEE (Ed.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2451-2454, Portland, OR, USA, (2016), ISBN: 978-1-5090-2725-5.

Abstract | Links | BibTeX | Tags: Annealing, boron, diffusion, junction formation, Junctions, low pressure chemical vapor deposition, passivating contacts, Resistance, Scanning electron microscopy, silicon, Substrates, Temperature measurement

2015

J. Krügener, R. Peibst, F. A. Wolf, E. Bugiel, T. Ohrdes, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, and H. J. Osten

Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters Journal Article

IEEE Journal of Photovoltaics 5 (1), 166-173, (2015).

Links | BibTeX | Tags: Annealing, boron, crystal defects, Density measurement, Doping, Ion implantation, photovoltaic, rapid thermal annealing (RTA), silicon, Surface texture, Temperature measurement

2014

J. Müller, H. Hannebauer, C. Mader, F. Haase, and K. Bothe

Dynamic infrared lifetime mapping for the measurement of the saturation current density of highly doped regions in silicon Journal Article

IEEE Journal of Photovoltaics 4 (2), 540-548, (2014).

Links | BibTeX | Tags: Cameras, charge carriers, Density measurement, Dynamic infrared lifetime mapping (ILM), Highly doped regions, Lighting, Photonics, recombination current, silicon, silicon solar cells, Temperature measurement

2013

C. Mader, U. Eitner, S. Kajari-Schröder, and R. Brendel

Bow of Silicon Wafers After In-Line High-Rate Evaporation of Aluminum Journal Article

IEEE Journal of Photovoltaics 3 (1), 212-216, (2013).

Links | BibTeX | Tags: Aluminum, Elastoplastic deformation, In-line evaporation, Photovoltaic cells, Photovoltaic systems, silicon, Silicon solar cell, Strain, Stress, Temperature measurement, wafer bow

2012

J. D. Murphy, K. Bothe, R. Krain, V. V. Voronkov, and R. J. Falster

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon, Journal Article

Journal of Applied Physics 111 (11), 113709, (2012).

Links | BibTeX | Tags: Doping, electron capture, electrons, silicon, Temperature measurement

2011

H. Wagner, A. Dastgheib-Shirazi, R. Chen, S. T. Dunham, M. Kessler, and P. P. Altermatt

Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer Inproceedings

IEEE (Ed.): 2011 37th IEEE Photovoltaic Specialists Conference, 002957-002962, Seattle, WA, USA, (2011), ISSN: 0160-8371.

Links | BibTeX | Tags: Equations, Glass, Mathematical model, Numerical models, Semiconductor process modeling, silicon, Temperature measurement

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