1357 Einträge « 61 von 68 »
1201.

R Brendel; J H Petermann; D Zielke; H Schulte-Huxel; M Kessler; S Gatz; S Eidelloth; R Bock; E Garralaga-Rojas; J Schmidt; T Dullweber

High-Efficiency Cells From Layer Transfer: A First Step Toward Thin-Film/Wafer Hybrid Silicon Technologies Artikel

In: IEEE Journal of Photovoltaics, Bd. 1, Nr. 1, S. 9-15, 2011, ISSN: 2156-3381.

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1202.

S Gatz; T Dullweber; R Brendel

Evaluation of Series Resistance Losses in Screen-Printed Solar Cells With Local Rear Contacts Artikel

In: IEEE Journal of Photovoltaics, Bd. 1, Nr. 1, S. 37-42, 2011, ISSN: 2156-3381.

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1203.

F Kiefer; C Ulzhofer; T Brendemuhl; N P Harder; R Brendel; V Mertens; S Bordihn; C Peters; J W Muller

High Efficiency N-Type Emitter-Wrap-Through Silicon Solar Cells Artikel

In: IEEE Journal of Photovoltaics, Bd. 1, Nr. 1, S. 49-53, 2011, ISSN: 2156-3381.

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1204.

B Lim; K Bothe; J Schmidt

Accelerated deactivation of the boron–oxygen-related recombination centre in crystalline silicon Artikel

In: Semiconductor Science and Technology, Bd. 26, Nr. 9, S. 095009, 2011.

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1205.

C Mader; R Bock; J Schmidt; R Brendel

Formation of highly aluminum-doped p-type silicon regions by in-line high-rate evaporation Artikel

In: Solar Energy Materials and Solar Cells, Bd. 95, Nr. 7, S. 1720-1722, 2011, ISSN: 0927-0248.

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1206.

P Poodt; V Tiba; F Werner; J Schmidt; A Vermeer; F Roozeboom

Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation Artikel

In: Journal of The Electrochemical Society, Bd. 158, Nr. 9, S. H937-H940, 2011.

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1207.

F E Rougieux; M Forster; D Macdonald; A Cuevas; B Lim; J Schmidt

Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated N-Type Silicon Artikel

In: IEEE Journal of Photovoltaics, Bd. 1, Nr. 1, S. 54-58, 2011, ISSN: 2156-3381.

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1208.

S Steingrube; O Breitenstein; K Ramspeck; S Glunz; A Schenk; P P Altermatt

Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation Artikel

In: Journal of Applied Physics, Bd. 110, Nr. 1, S. 014515, 2011.

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1209.

F Kiefer; C Ulzhöfer; T Brendemühl; N P Harder; R Brendel; V Mertens; S Bordihn; C Peters; J W Müller

High efficiency n-type emitter-wrap-through silicon solar cells Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003341, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1210.

F Werner; B Veith; D Zielke; L Kühnemund; C Tegenkamp; M Seibt; R Brendel; J Schmidt

Electronic and chemical properties of the c-Si/Al2O3 interface Artikel

In: Journal of Applied Physics, Bd. 109, Nr. 11, S. 113701, 2011.

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1211.

R Brendel; J Petermann; E G Rojas; D Zielke; J Schmidt; S Gatz; T Dullweber

High-efficiency cells from layer transfer: A first step towards Si thin-film/wafer hybrid technologies Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 000046, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1212.

S Gatz; T Dullweber; R Brendel

Contact resistance of local rear side contacts of screen-printed silicon PERC solar cells with efficiencies up to 19.4% Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003658, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1213.

M Kessler; D Münster; T Neubert; C P Mader; J Schmidt; R Brendel

High-efficiency back-junction silicon solar cell with an in-line evaporated aluminum front grid Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 001085-001090, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1214.

F E Rougieux; D Macdonald; A Cuevas; B Lim; J Schmidt

Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003424, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1215.

B Vermang; F Werner; W Stals; A Lorenz; A Rothschild; J John; J Poortmans; R Mertens; R Gortzen; P Poodt; F Roozeboom; J Schmidt

Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput si solar cell passivation Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 001144-001149, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1216.

F Haase; S Eidelloth; R Horbelt; K Bothe; E G Rojas; R Brendel

Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 002874-002877, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1217.

H Wagner; A Dastgheib-Shirazi; R Chen; S T Dunham; M Kessler; P P Altermatt

Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 002957-002962, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1218.

N Mingirulli; J Haschke; R Gogolin; R Ferré; T F Schulze; J Düsterhöft; N P Harder; L Korte

Interdigitated back-contacted silicon heterojunction solar cells with improved fill-factor and efficiency Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003338, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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1219.

U Eitner; S Kajari-Schröder

Mechanical properties of EVA-based encapsulants Sonstige

Photovoltaics International Volume 12, 2011.

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1220.

O Breitenstein; J Bauer; K Bothe; W Kwapil; D Lausch; U Rau; J Schmidt; M Schneemann; M C Schubert; J -M Wagner; W Warta

Understanding junction breakdown in multicrystalline solar cells Artikel

In: Journal of Applied Physics, Bd. 109, Nr. 7, S. 071101, 2011.

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1357 Einträge « 61 von 68 »