In: IEEE Journal of Photovoltaics, Bd. 1, Nr. 1, S. 9-15, 2011, ISSN: 2156-3381.
Evaluation of Series Resistance Losses in Screen-Printed Solar Cells With Local Rear Contacts Artikel
In: IEEE Journal of Photovoltaics, Bd. 1, Nr. 1, S. 37-42, 2011, ISSN: 2156-3381.
High Efficiency N-Type Emitter-Wrap-Through Silicon Solar Cells Artikel
In: IEEE Journal of Photovoltaics, Bd. 1, Nr. 1, S. 49-53, 2011, ISSN: 2156-3381.
Accelerated deactivation of the boron–oxygen-related recombination centre in crystalline silicon Artikel
In: Semiconductor Science and Technology, Bd. 26, Nr. 9, S. 095009, 2011.
Formation of highly aluminum-doped p-type silicon regions by in-line high-rate evaporation Artikel
In: Solar Energy Materials and Solar Cells, Bd. 95, Nr. 7, S. 1720-1722, 2011, ISSN: 0927-0248.
Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation Artikel
In: Journal of The Electrochemical Society, Bd. 158, Nr. 9, S. H937-H940, 2011.
Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated N-Type Silicon Artikel
In: IEEE Journal of Photovoltaics, Bd. 1, Nr. 1, S. 54-58, 2011, ISSN: 2156-3381.
In: Journal of Applied Physics, Bd. 110, Nr. 1, S. 014515, 2011.
High efficiency n-type emitter-wrap-through silicon solar cells Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003341, Seattle, WA, USA, 2011, ISSN: 0160-8371.
Electronic and chemical properties of the c-Si/Al2O3 interface Artikel
In: Journal of Applied Physics, Bd. 109, Nr. 11, S. 113701, 2011.
High-efficiency cells from layer transfer: A first step towards Si thin-film/wafer hybrid technologies Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 000046, Seattle, WA, USA, 2011, ISSN: 0160-8371.
Contact resistance of local rear side contacts of screen-printed silicon PERC solar cells with efficiencies up to 19.4% Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003658, Seattle, WA, USA, 2011, ISSN: 0160-8371.
High-efficiency back-junction silicon solar cell with an in-line evaporated aluminum front grid Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 001085-001090, Seattle, WA, USA, 2011, ISSN: 0160-8371.
Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003424, Seattle, WA, USA, 2011, ISSN: 0160-8371.
Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput si solar cell passivation Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 001144-001149, Seattle, WA, USA, 2011, ISSN: 0160-8371.
Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 002874-002877, Seattle, WA, USA, 2011, ISSN: 0160-8371.
Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 002957-002962, Seattle, WA, USA, 2011, ISSN: 0160-8371.
Interdigitated back-contacted silicon heterojunction solar cells with improved fill-factor and efficiency Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003338, Seattle, WA, USA, 2011, ISSN: 0160-8371.
Mechanical properties of EVA-based encapsulants Sonstige
Photovoltaics International Volume 12, 2011.
Understanding junction breakdown in multicrystalline solar cells Artikel
In: Journal of Applied Physics, Bd. 109, Nr. 7, S. 071101, 2011.