Veröffentlichungen
2016 |
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D. Muñoz, P. J. Ribeyron, S. Harrison, C. Allebé, A. Descoeudres, M. Despeisse, C. Reichel, S. W. Glunz, R. Peibst, A. Merkle, O. Nielsen, I. Martín, V. Mihailetchi, T. Söderström, B. Demaurex, S. de Wolf, H. Mehlich, J. Zhao, J. Alvarez, J. Dupuis, E. Macron, B. de Gier, M. Tallián, F. Korsós, and L. Korte Status of the EU FP7 HERCULES project: What is the potential of n-type silicon solar cells in Europe? Inproceedings WIP (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference,, 331-334, Munich, Germany, (2016), ISBN: 3-936338-41-8. Abstract | Links | BibTeX | Schlagwörter: heterojunction, IBC, Industrialization, Silicon (Si), Solar Cells @inproceedings{Muñoz2016,
title = {Status of the EU FP7 HERCULES project: What is the potential of n-type silicon solar cells in Europe?}, author = {D Muñoz and P J Ribeyron and S Harrison and C Allebé and A Descoeudres and M Despeisse and C Reichel and S W Glunz and R Peibst and A Merkle and O Nielsen and I Martín and V Mihailetchi and T Söderström and B Demaurex and S de Wolf and H Mehlich and J Zhao and J Alvarez and J Dupuis and E Macron and B de Gier and M Tallián and F Korsós and L Korte}, editor = {WIP}, doi = {10.4229/EUPVSEC20162016-2BO.3.6}, isbn = {3-936338-41-8}, year = {2016}, date = {2016-09-01}, booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference,}, journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, pages = {331-334}, address = {Munich, Germany}, abstract = {The concept proposed by the HERCULES project is to develop innovative n-type monocrystalline c-Si device structures based on both sides’ contacted silicon heterojunction (SHJ) solar cells, on interdigitated back-contact (IBC) solar cells with alternative junction formation, as well as on hybrid concepts (homo-heterojunction). These concepts are the most promising technologies to reach ultra-high efficiencies with industrially relevant processes. The HERCULES strategy is to transfer the developed processes to industrial scale by considering all major cost drivers of the entire manufacturing process chain. The final objective is to obtain both high-efficiency solar cells and modules, based on adequately simple process sequences. It requires strong expertise and equipment mastering in order to provide a commercially viable technology that can be implemented by the European PV industry. To this end, the HERCULES consortium takes advantage of its leading European expertise in both research and production. In this paper, major results are presented concerning the first 30 months in material, solar cell development, module integration and pilot line activity. The strong improvements achieved in all the value chain demonstrate the strong need of collaboration within all partners to reach very ambitious objectives from the optimization of n-type solar cells & modules up to production level. }, keywords = {heterojunction, IBC, Industrialization, Silicon (Si), Solar Cells}, pubstate = {published}, tppubtype = {inproceedings} } The concept proposed by the HERCULES project is to develop innovative n-type monocrystalline c-Si device structures based on both sides’ contacted silicon heterojunction (SHJ) solar cells, on interdigitated back-contact (IBC) solar cells with alternative junction formation, as well as on hybrid concepts (homo-heterojunction). These concepts are the most promising technologies to reach ultra-high efficiencies with industrially relevant processes. The HERCULES strategy is to transfer the developed processes to industrial scale by considering all major cost drivers of the entire manufacturing process chain. The final objective is to obtain both high-efficiency solar cells and modules, based on adequately simple process sequences. It requires strong expertise and equipment mastering in order to provide a commercially viable technology that can be implemented by the European PV industry. To this end, the HERCULES consortium takes advantage of its leading European expertise in both research and production. In this paper, major results are presented concerning the first 30 months in material, solar cell development, module integration and pilot line activity. The strong improvements achieved in all the value chain demonstrate the strong need of collaboration within all partners to reach very ambitious objectives from the optimization of n-type solar cells & modules up to production level.
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J. Schmidt, D. Zielke, R. Gogolin, R. Sauer, and W. Lövenich Recent advances in polymer/silicon heterojunction solar cells Inproceedings WIP (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, Munich, Germany, (2016), ISBN: 3-936338-41-8. Abstract | Links | BibTeX | Schlagwörter: c-Si, heterojunction, Hybrid, passivation, Polymer Film, screen-printing, Stability @inproceedings{Schmidt2016,
title = {Recent advances in polymer/silicon heterojunction solar cells}, author = {J Schmidt and D Zielke and R Gogolin and R Sauer and W Lövenich}, editor = {WIP}, doi = {10.4229/EUPVSEC20162016-1CO.10.6}, isbn = {3-936338-41-8}, year = {2016}, date = {2016-09-01}, booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, address = {Munich, Germany}, abstract = {In this contribution, we first give a brief historical overview of the recent developments on polymer/silicon heterojunction cells. We then focus on our most recent results concerning: (i) the PEDOT:PSS/c-Si interface design, where the thickness of the native oxide in-between the c-Si surface and the polymer is shown to play a crucial role, (ii) a new type of heterojunction cell, where the hole-selective layer is PEDOT:PSS and the electronselective layer is well-passivating phosphorus-doped amorphous silicon (n-a-Si:H), (iii) the stability of the polymer/silicon cells in ambient environment. We demonstrate for the first time that the efficiencies of BackPEDOT cells are long-term stable if a metal foil is used as rear metallization scheme, as the metal foil does not transmit any humidity in contrast to evaporated metals. (iv) We present first results of our attempt to implement a PEDOT:PSS/c- Si junction into an industrial-type large-area (15.6×15.6 cm2) screen-printed c-Si solar cell and reach an efficiency of 19.5% in our first batch of cells. }, keywords = {c-Si, heterojunction, Hybrid, passivation, Polymer Film, screen-printing, Stability}, pubstate = {published}, tppubtype = {inproceedings} } In this contribution, we first give a brief historical overview of the recent developments on polymer/silicon heterojunction cells. We then focus on our most recent results concerning: (i) the PEDOT:PSS/c-Si interface design, where the thickness of the native oxide in-between the c-Si surface and the polymer is shown to play a crucial role, (ii) a new type of heterojunction cell, where the hole-selective layer is PEDOT:PSS and the electronselective layer is well-passivating phosphorus-doped amorphous silicon (n-a-Si:H), (iii) the stability of the polymer/silicon cells in ambient environment. We demonstrate for the first time that the efficiencies of BackPEDOT cells are long-term stable if a metal foil is used as rear metallization scheme, as the metal foil does not transmit any humidity in contrast to evaporated metals. (iv) We present first results of our attempt to implement a PEDOT:PSS/c- Si junction into an industrial-type large-area (15.6×15.6 cm2) screen-printed c-Si solar cell and reach an efficiency of 19.5% in our first batch of cells.
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R. Gogolin, D. Zielke, W. Lövenich, R. Sauer, and J. Schmidt Energy Procedia 92 , 638-643, (2016), ISSN: 1876-6102, (Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)). Abstract | Links | BibTeX | Schlagwörter: heterojunction, interface preparation, organic-silicon junction, PEDOT:PSS @article{Gogolin2016b,
title = {Silicon Heterojunction Solar Cells Combining an a-Si:H (n) Electron-collector with a PEDOT:PSS Hole-collector}, author = {R Gogolin and D Zielke and W Lövenich and R Sauer and J Schmidt}, doi = {10.1016/j.egypro.2016.07.030}, issn = {1876-6102}, year = {2016}, date = {2016-08-01}, journal = {Energy Procedia}, volume = {92}, pages = {638-643}, abstract = {We combine PEDOT:PSS as hole-selective layer on c-Si with a well-passivating electron-selective a-Si:H(n) layer in an alternative type of silicon heterojunction solar cell. As the interface between the PEDOT:PSS and the c-Si substrate plays a crucial role in the cell performance, we examine the impact of an interfacial SiOx tunneling layer between the c-Si substrate and the PEDOT:PSS in detail. We find that a natural SiOx layer grown within a couple of minutes leads to low J0 values ranging between (80 - 130) fA/cm2, allowing for Voc values of ∼690 mV. Implementation of this PEDOT:PSS/SiOx/c-Si junctions into solar cells with phosphorus-diffused n+ front results in low series resistance values of only 0.6 Ωcm2 and good fill factors >80% leading to efficiencies >20%. We then implement the PEDOT:PSS/SiOx/c-Si junction to the back of heterojunction cells with an a-Si:H(n)/ITO front, in order to demonstrate the feasibility of this novel cell concept, which has a higher Voc potential compared to cells with a conventionally processed front side. The cell efficiencies of the first batch reach 15.2%. This relatively moderate efficiency of the first cell batch is due to technological issues with the screen-printed front metallization grid, leading to poor fill factors of only 71%, whereas the Voc values of this first batch were already above 650 mV.}, note = {Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)}, keywords = {heterojunction, interface preparation, organic-silicon junction, PEDOT:PSS}, pubstate = {published}, tppubtype = {article} } We combine PEDOT:PSS as hole-selective layer on c-Si with a well-passivating electron-selective a-Si:H(n) layer in an alternative type of silicon heterojunction solar cell. As the interface between the PEDOT:PSS and the c-Si substrate plays a crucial role in the cell performance, we examine the impact of an interfacial SiOx tunneling layer between the c-Si substrate and the PEDOT:PSS in detail. We find that a natural SiOx layer grown within a couple of minutes leads to low J0 values ranging between (80 - 130) fA/cm2, allowing for Voc values of ∼690 mV. Implementation of this PEDOT:PSS/SiOx/c-Si junctions into solar cells with phosphorus-diffused n+ front results in low series resistance values of only 0.6 Ωcm2 and good fill factors >80% leading to efficiencies >20%. We then implement the PEDOT:PSS/SiOx/c-Si junction to the back of heterojunction cells with an a-Si:H(n)/ITO front, in order to demonstrate the feasibility of this novel cell concept, which has a higher Voc potential compared to cells with a conventionally processed front side. The cell efficiencies of the first batch reach 15.2%. This relatively moderate efficiency of the first cell batch is due to technological issues with the screen-printed front metallization grid, leading to poor fill factors of only 71%, whereas the Voc values of this first batch were already above 650 mV.
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2014 |
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D. Zielke, A. Pazidis, F. Werner, and J. Schmidt Organic-silicon heterojunction solar cells on n-type silicon wafers: the BackPEDOT concept Artikel Solar Energy Materials and Solar Cells 131 , 110-116, (2014), (SiliconPV 2014). Links | BibTeX | Schlagwörter: heterojunction, Organic-silicon, PEDOT:PSS, saturation current density, solar cell @article{Zielke2014b,
title = {Organic-silicon heterojunction solar cells on n-type silicon wafers: the BackPEDOT concept}, author = {D Zielke and A Pazidis and F Werner and J Schmidt}, doi = {10.1016/j.solmat.2014.05.022}, year = {2014}, date = {2014-12-01}, journal = {Solar Energy Materials and Solar Cells}, volume = {131}, pages = {110-116}, note = {SiliconPV 2014}, keywords = {heterojunction, Organic-silicon, PEDOT:PSS, saturation current density, solar cell}, pubstate = {published}, tppubtype = {article} } |
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J. H. Petermann, H. Schulte-Huxel, V. Steckenreiter, S. Kajari-Schroder, and R. Brendel Principle of module-level processing demonstrated at single a-Si:H/c-Si heterojunction solar cells Artikel IEEE Journal of Photovoltaics 4 (4), 1018-1024, (2014). Links | BibTeX | Schlagwörter: Contact recombination velocity, Glass, heterojunction, Hybrid silicon, Indium tin oxide, laser-fired and bonding contacts (LFBCs), module-level processing, passivation, Photovoltaic cells, silicon, Silicon compounds, silicone, Substrates @article{Petermann2014,
title = {Principle of module-level processing demonstrated at single a-Si:H/c-Si heterojunction solar cells}, author = {J H Petermann and H Schulte-Huxel and V Steckenreiter and S Kajari-Schroder and R Brendel}, doi = {10.1109/JPHOTOV.2014.2314576}, year = {2014}, date = {2014-07-01}, journal = {IEEE Journal of Photovoltaics}, volume = {4}, number = {4}, pages = {1018-1024}, keywords = {Contact recombination velocity, Glass, heterojunction, Hybrid silicon, Indium tin oxide, laser-fired and bonding contacts (LFBCs), module-level processing, passivation, Photovoltaic cells, silicon, Silicon compounds, silicone, Substrates}, pubstate = {published}, tppubtype = {article} } |
2013 |
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J. H. Petermann, H. Schulte-Huxel, V. Steckenreiter, R. Gogolin, S. Eidelloth, T. Dullweber, S. Kajari-Schröder, and R. Brendel Module interconnection of both sides-contacted silicon solar cells by screen-printing Inproceedings IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 3448-3453, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3. Links | BibTeX | Schlagwörter: Glass, heterojunction, Hybrid silicon, Integrated circuit interconnections, Lasers, module interconnection, module level processing, passivation, Photovoltaic cells, Resistance, screen-printing, silicon @inproceedings{Petermann2013,
title = {Module interconnection of both sides-contacted silicon solar cells by screen-printing}, author = {J H Petermann and H Schulte-Huxel and V Steckenreiter and R Gogolin and S Eidelloth and T Dullweber and S Kajari-Schröder and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2013.6745190}, isbn = {978-1-4799-3299-3}, year = {2013}, date = {2013-06-16}, booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) }, journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference}, pages = {3448-3453}, address = {Tampa, FL, USA}, keywords = {Glass, heterojunction, Hybrid silicon, Integrated circuit interconnections, Lasers, module interconnection, module level processing, passivation, Photovoltaic cells, Resistance, screen-printing, silicon}, pubstate = {published}, tppubtype = {inproceedings} } |