1.
N Wehmeier; F Kiefer; T Brendemühl; L Mettner; S J Wolter; F Haase; R Peibst; M Holthausen; D Mispelkamp; C Mader; C Daeschlein; O Wunnicke; S Kajari-Schröder
Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions Artikel
In: IEEE Journal of Photovoltaics, Bd. 11, Nr. 5, S. 1149-1157, 2021.
@article{Wehmeier2021b,
title = {Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions},
author = {N Wehmeier and F Kiefer and T Brendemühl and L Mettner and S J Wolter and F Haase and R Peibst and M Holthausen and D Mispelkamp and C Mader and C Daeschlein and O Wunnicke and S Kajari-Schröder},
doi = {10.1109/JPHOTOV.2021.3094131},
year = {2021},
date = {2021-09-01},
urldate = {2021-09-01},
journal = {IEEE Journal of Photovoltaics},
volume = {11},
number = {5},
pages = {1149-1157},
abstract = {We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm2 are achieved for n+-POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO2 solar cell processing. In particular, for POLO2-IBC cells, a lean process flow is facilitated.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm2 are achieved for n+-POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO2 solar cell processing. In particular, for POLO2-IBC cells, a lean process flow is facilitated.