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Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput si solar cell passivation Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 001144-001149, Seattle, WA, USA, 2011, ISSN: 0160-8371.
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Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks Proceedings Article
In: IEEE, (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, S. 000885-000890, Honolulu, HI, USA, 2010, ISSN: 0160-8371.