N Wehmeier; F Kiefer; T Brendemühl; L Mettner; S J Wolter; F Haase; R Peibst; M Holthausen; D Mispelkamp; C Mader; C Daeschlein; O Wunnicke; S Kajari-Schröder
Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions Artikel
In: IEEE Journal of Photovoltaics, Bd. 11, Nr. 5, S. 1149-1157, 2021.
@article{Wehmeier2021b,
title = {Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions},
author = {N Wehmeier and F Kiefer and T Brendemühl and L Mettner and S J Wolter and F Haase and R Peibst and M Holthausen and D Mispelkamp and C Mader and C Daeschlein and O Wunnicke and S Kajari-Schröder},
doi = {10.1109/JPHOTOV.2021.3094131},
year = {2021},
date = {2021-09-01},
urldate = {2021-09-01},
journal = {IEEE Journal of Photovoltaics},
volume = {11},
number = {5},
pages = {1149-1157},
abstract = {We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm2 are achieved for n+-POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO2 solar cell processing. In particular, for POLO2-IBC cells, a lean process flow is facilitated.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
M Stöhr; J Aprojanz; R Brendel; T Dullweber
Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells Artikel
In: ACS Applied Energy Materials, Bd. 4, Nr. 5, S. 4646–4653, 2021.
@article{Stöhr2021,
title = {Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells},
author = {M Stöhr and J Aprojanz and R Brendel and T Dullweber},
doi = {10.1021/acsaem.1c00265},
year = {2021},
date = {2021-05-24},
journal = {ACS Applied Energy Materials},
volume = {4},
number = {5},
pages = {4646–4653},
publisher = {American Chemical Society},
abstract = {Passivating contacts based on SiOx/poly-Si exhibit excellent contact and surface passivation properties enabling very high solar cell conversion efficiencies. In this paper, we investigate and optimize the plasma-enhanced chemical vapor deposition (PECVD) of SiOxNy/n-a-Si stacks, their subsequent annealing to SiOxNy/n-poly-Si stacks followed by PECVD SiNx deposition and firing. We eliminate blistering of the poly-Si layer by enabling a controlled hydrogen out-diffusion during the annealing step. Whereas the J0 of thermal SiOx/n-poly-Si stacks degrade after firing, PECVD SiOxNy/n-poly-Si stacks exhibit excellent firing stability enabling J0 values down to 1.3 fA/cm2 after firing which corresponds to an outstanding implied VOC of 744 mV. The application of different hydrogenation processes to the thermal SiOx/n-poly-Si and PECVD SiOxNy/n-poly-Si stacks reveals that both stacks achieve excellent passivation properties with J0 = 1.5 fA/cm2 after maximum hydrogenation. However, only the PECVD SiOxNy/n-poly-Si stack maintains this excellent surface passivation after firing possibly due to a superior capability to retain the hydrogen at the c-Si/SiOxNy interface during firing and thus demonstrates the potential as a future manufacturing process sequence.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Y Larionova; H Schulte-Huxel; B Min; S Schäfer; T Kluge; H Mehlich; R Brendel; R Peibst
In: Solar RRL, Bd. 4, Nr. 10, S. 2000177, 2020.
@article{Larionova2020,
title = {Ultra-Thin Poly-Si Layers: Passivation Quality, Utilization of Charge Carriers Generated in the Poly-Si and Application on Screen-Printed Double-Side Contacted Polycrystalline Si on Oxide Cells},
author = {Y Larionova and H Schulte-Huxel and B Min and S Schäfer and T Kluge and H Mehlich and R Brendel and R Peibst},
doi = {10.1002/solr.202000177},
year = {2020},
date = {2020-10-01},
journal = {Solar RRL},
volume = {4},
number = {10},
pages = {2000177},
abstract = {Herein, the various measures to improve the efficiency of large-area screen-printed double-side contacted polycrystalline Si on oxide (POLO)-cells are experimentally demonstrated. The short-circuit current density Jsc increases by 0.6 mA cm−2 upon reducing the thickness of poly-Si from 25 to 10 nm due to the reduction of the parasitic absorption in the poly-Si layer at the textured front side of the cell. Additionally, it is shown for the first time that the minority carriers generated by light absorbed in the poly-Si layer can at least partially be transferred into the crystalline Si base. Remarkably high implied open-circuit voltage Voc,impl values are achieved with n-type cell precursors by introducing an hydrogenation step by AlxOy after reducing the poly-Si thickness, and by an additional annealing step after sputtering of transparent conductive oxides (TCOs). All cell precursors show Voc,impl values of up to 740 mV independent of the poly-Si thickness. A reduction in the open-circuit voltage Voc is observed during back-end processing to 728 mV as measured on the final cells. A certified cell energy conversion efficiency of 22.3% is reported.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Y Larionova; H Schulte-Huxel; B Min; S Hartmann; M Turcu; T Kluge; H Mehlich; R Brendel; R Peibst
Screen Printed Double-Side Contacted POLO-Cells with Ultra-Thin Poly-Si Layers and Different Transparent Conductive Oxides Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition, S. 172-175, Marseille, France, 2019, ISBN: 3-936338-60-4.
@inproceedings{Larionova2019b,
title = {Screen Printed Double-Side Contacted POLO-Cells with Ultra-Thin Poly-Si Layers and Different Transparent Conductive Oxides},
author = {Y Larionova and H Schulte-Huxel and B Min and S Hartmann and M Turcu and T Kluge and H Mehlich and R Brendel and R Peibst},
editor = {WIP},
doi = {10.4229/EUPVSEC20192019-2BO.2.6},
isbn = {3-936338-60-4},
year = {2019},
date = {2019-10-23},
booktitle = {Proceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition},
pages = {172-175},
address = {Marseille, France},
abstract = {In this work we demonstrate various measures to improve the efficiency of large-area screen-printed double-side contacted POLO-cells with different transparent conductive oxides (TCO). We experimentally increase the short-circuit current density Jsc up to 0.6 mA/cm2 by reducing the thickness of poly-Si from 25 nm to 10 nm due to the reduction of the parasitic absorption in the poly-Si layer at the textured cell front side. An implemented hydrogenation step with AlxOy and post-deposition anneal of TCO enable remarkably high implied open-circuit voltage Voc,impl values on n-type cell precursors after the sputtering process. All cell precursors show Voc,impl of up to 740 mV independent of the poly-Si thickness. We find an improvement of the open-circuit voltage Voc of the final cells of up to 728 mV, a cell efficiency of up to 22.3% with indium tin oxide, and a cell efficiency of 21.6% with an aluminum-doped zinc oxide on top or the n+-type POLO layer.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
Y Larionova; H Schulte-Huxel; B Min; S Hartmann; M Turcu; T Kluge; H Mehlich; R Brendel; R Peibst
Screen Printed Double-Side Contacted POLO-Cells with Ultra-Thin Poly-Si Layers and Different Transparent Conductive Oxides Vortrag
Marseille, France, 10.09.2019, (36th European Photovoltaic Solar Energy Conference and Exhibition).
@misc{Larionova2019,
title = {Screen Printed Double-Side Contacted POLO-Cells with Ultra-Thin Poly-Si Layers and Different Transparent Conductive Oxides},
author = {Y Larionova and H Schulte-Huxel and B Min and S Hartmann and M Turcu and T Kluge and H Mehlich and R Brendel and R Peibst},
year = {2019},
date = {2019-09-10},
address = {Marseille, France},
abstract = {In this work we demonstrate various measures to improve the efficiency of large-area screen-printed double-side contacted POLO-cells with different transparent conductive oxides (TCO). We experimentally increase the short-circuit current density Jsc up to 0.6 mA/cm2 by reducing the thickness of poly-Si from 25 nm to 10 nm due to the reduction of the parasitic absorption in the poly-Si layer at the textured cell front side. An implemented hydrogenation step with AlxOy and post-deposition anneal of TCO enable remarkably high implied open-circuit voltage Voc,impl values on n-type cell precursors after the sputtering process. All cell precursors show Voc,impl of up to 740 mV independent of the poly-Si thickness. We find an improvement of the open-circuit voltage Voc of the final cells of up to 728 mV, a cell efficiency of up to 22.3% with indium tin oxide, and a cell efficiency of 21.6% with an aluminum-doped zinc oxide on top or the n+-type POLO layer.},
note = {36th European Photovoltaic Solar Energy Conference and Exhibition},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
J Schmidt; R Peibst; R Brendel
Surface passivation of crystalline silicon solar cells: Present and future Artikel
In: Solar Energy Materials and Solar Cells, Bd. 187, S. 39-54, 2018, ISSN: 0927-0248.
@article{Schmidt2018b,
title = {Surface passivation of crystalline silicon solar cells: Present and future},
author = {J Schmidt and R Peibst and R Brendel},
doi = {10.1016/j.solmat.2018.06.047},
issn = {0927-0248},
year = {2018},
date = {2018-12-01},
journal = {Solar Energy Materials and Solar Cells},
volume = {187},
pages = {39-54},
abstract = {In the first part of this paper, we review the developments which led to the present state-of-the-art in the surface passivation of today's industrially predominant dopant-diffused crystalline silicon (c-Si) solar cells, based on dielectric layers such as silicon oxide, silicon nitride, aluminum oxide and stacks thereof. In the second part of this review, we focus on the future developments in the field of c-Si solar cells based on carrier-selective passivation layers. Whereas the dielectric layers are insulating and are hence applied only for passivating the non-contacted areas of the silicon surface, the carrier-selective passivation layers are intended to provide an effective passivation of non-contacted as well as contacted areas of a c-Si solar cell, thereby increasing the efficiency potential of c-Si solar cells significantly. Due to the fact that the carrier-selective layers are implemented in a contact, besides the good passivation properties for minorities, these layers must also provide a good majority carrier transport, i.e. they have to provide a low contact resistance. Both properties, i.e. suppression of minority-carrier recombination as well as good majority-carrier transport, define the selectivity of the carrier-selective contact, which is an important figure of merit for the assessment and comparison of different types of carrier-selective contacts. One very promising type of carrier-selective passivation layer is based on heavily doped polycrystalline silicon layers deposited on a thin silicon oxide layer, the latter providing the excellent passivation while enabling efficient majority-carrier transport via pin-holes and/or tunneling. Moreover, we discuss metal oxides and conductive polymers, which have only recently been applied to c-Si photovoltaics, but seem to have a promising potential as low-cost selective contact materials. We finally compare combinations of the various options of carrier-selective layers concerning their combined selectivities and efficiency potentials.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
B Min; M Müller; H Wagner; G Fischer; R Brendel; P P Altermatt; H Neuhaus
A Roadmap Toward 24 % Efficient PERC Solar Cells in Industrial Mass Production Artikel
In: IEEE Journal of Photovoltaics, Bd. 7, Nr. 6, S. 1541-1550, 2017, ISSN: 2156-3381.
@article{Min2017c,
title = {A Roadmap Toward 24 % Efficient PERC Solar Cells in Industrial Mass Production},
author = {B Min and M Müller and H Wagner and G Fischer and R Brendel and P P Altermatt and H Neuhaus},
doi = {10.1109/JPHOTOV.2017.2749007},
issn = {2156-3381},
year = {2017},
date = {2017-11-01},
journal = {IEEE Journal of Photovoltaics},
volume = {7},
number = {6},
pages = {1541-1550},
abstract = {Many manufacturers choose the passivated emitter and rear cell (PERC) approach in order to surpass the 20% cell efficiency level in mass production. In this paper, we study the efficiency potential of the PERC approach under realistic assumptions for incremental improvements of existing technologies by device simulations. Based on the most recent published experimental results, we find that the PERC structure is able to reach about 24% cell efficiency in mass production by an ongoing sequence of incremental improvements. As a guideline for future developments, we provide a method to improve cell efficiency most effectively by monitoring the current losses at the maximum power point. By means of numerical device modeling, we identify some key technologies toward 24% efficient PERC cells and provide its technology-related target requirements.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
T Dullweber; H Hannebauer; S Dorn; S Schimanke; A Merkle; C Hampe; R Brendel
In: Progress in Photovoltaics: Research and Applications, Bd. 25, Nr. 7, S. 509-514, 2017.
@article{Dullweber2017b,
title = {Emitter saturation current densities of 22fA/cm2 applied to industrial PERC solar cells approaching 22% conversion efficiency},
author = {T Dullweber and H Hannebauer and S Dorn and S Schimanke and A Merkle and C Hampe and R Brendel},
doi = {10.1002/pip.2806},
year = {2017},
date = {2017-07-01},
journal = {Progress in Photovoltaics: Research and Applications},
volume = {25},
number = {7},
pages = {509-514},
abstract = {Passivated Emitter and Rear Cells (PERC) are currently being introduced into mass production. The conversion efficiency of industrial p‐type PERC cells is limited by the emitter saturation current density of around 90 fA/cm2 of conventional homogeneously POCl3 diffused emitters. In this paper we investigate two alternative emitter formation technologies. The first approach named in‐situ oxidation inserts a short thermal oxidation in‐between the phosphorus silicate glass deposition and the drive‐in of a conventional homogeneous POCl3 diffusion thereby reducing the phosphorus surface concentration. The second approach named Gas Phase Etch Back (GEB) selectively removes around 40 nm of the highly doped surface of the POCl3 diffused emitter by the reactive gas phase of the wet chemical rear polishing bath. Whereas the conventional POCl3 emitter exhibits a phosphorus surface doping concentration of 3 × 10^20 cm−3, the in‐situ oxidation and the GEB process reduce the doping concentration to 7 × 10^19 cm−3 and 4 × 10^19 cm−3, respectively. Accordingly, the emitter saturation current density is reduced to excellent values of 22 fA/cm2 (in‐situ oxidation) and 28 fA/cm2 (GEB) compared with 89 fA/cm2 for the reference POCl3 diffusion. Whereas the reference POCl3 emitter limits the PERC conversion efficiency η to 21.1% and the open circuit voltage Voc to 655 mV, the in‐situ oxidation improves the PERC current–voltage parameters up to 21.3% and 663 mV. The highest efficiency of 21.6% is obtained with the selective GEB emitter. When solving series resistance issues with the most advanced GEB emitter, the measured Voc and Jsc values would support PERC conversion efficiencies up to 21.9%.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
N Wehmeier; A Nowack; B Lim; T Brendemühl; S Kajari-Schröder; J Schmidt; R Brendel; T Dullweber
In: Solar Energy Materials and Solar Cells, Bd. 158, S. 50-54, 2016, (Proceedings of the 6th International Conference on Silicon Photovoltaics (SiliconPV)).
@article{Wehmeier2016b,
title = {21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source},
author = {N Wehmeier and A Nowack and B Lim and T Brendemühl and S Kajari-Schröder and J Schmidt and R Brendel and T Dullweber},
doi = {10.1016/j.solmat.2016.05.054},
year = {2016},
date = {2016-12-01},
journal = {Solar Energy Materials and Solar Cells},
volume = {158},
pages = {50-54},
abstract = {The manufacturing process of Passivated Emitter and Rear Totally diffused (PERT) solar cells on n-type crystalline silicon is significantly simplified by applying multifunctional layer stacks acting as diffusion source, etching and diffusion barrier. We apply boron silicate glasses (BSG) capped with silicon nitride (SiNz) layers that are deposited by means of plasma enhanced chemical vapor deposition (PECVD). Optimum PECVD deposition parameters for the BSG layer such as the gas flow ratio of the precursor gases silane and diborane SiH4/B2H6=8% and the layer thickness of 40 nm result in a boron diffusion with saturation current density J0,B below 10 fA/cm2 applying an AlOx/SiNy passivation and firing. The PECVD BSG diffusion source is integrated into the n-type PERT back junction (BJ) solar cell process with screen-printed front and rear contacts. The only high temperature step is a POCl3 co-diffusion for the formation of the boron emitter from the PECVD BSG layer and for the formation of the phosphorus-doped front surface field (FSF). An independently confirmed energy conversion efficiency of 21.0% is achieved for a 156×156 mm2 large n-PERT BJ cell with this simplified process flow. This is the highest efficiency reported for a large-area co-diffused n-type PERT BJ solar cell using a PECVD BSG as diffusion source. For comparison, reference n-type PERT BJ cells with separate POCl3 and BBr3 diffusions reach an efficiency of 21.2% in our lab. A synergistic efficiency gain analysis (SEGA) for the co-diffused n-PERT BJ cell shows that the main possible efficiency gain of 1.1%abs. originates from recombination in the phosphorus-diffused front surface field while the PECVD BSG boron-doped emitter accounts for only 0.1%abs. efficiency gain. We evaluate the use of the PECVD BSG/SiNz stack as a rear side passivation as a replacement of the AlOx/SiNy stack in order to further simplify the process flow. We obtain J0,B values of 40 fA/cm2, an implied open-circuit voltage of 682 mV and a simulated n-PERT BJ cell efficiency of 21.1%.},
note = {Proceedings of the 6th International Conference on Silicon Photovoltaics (SiliconPV)},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
T Dullweber; J Schmidt
In: IEEE Journal of Photovoltaics, Bd. 6, Nr. 5, S. 1366-1381, 2016.
@article{Dullweber2016b,
title = {Industrial silicon solar cells applying the passivated emitter and rear cell (PERC) concept a review},
author = {T Dullweber and J Schmidt},
doi = {10.1109/JPHOTOV.2016.2571627},
year = {2016},
date = {2016-09-01},
journal = {IEEE Journal of Photovoltaics},
volume = {6},
number = {5},
pages = {1366-1381},
abstract = {Even though the passivated emitter and rear cell (PERC) concept was introduced as a laboratory-type solar cell in 1989, it took 25 years to transfer this concept into industrial mass production. Today, PERC-type solar cells account for 10% of the worldwide produced solar cells, and their share is expected to rapidly increase up to 35% within the next few years. Record efficiencies up to 22.1% of industrial PERC cells approach an efficiency of 22.8% of the lab-type PERC cell in 1989. This paper reviews the most important research results and technological developments of the past 25 years, which enabled the successful transfer of the lab-type PERC concept into industrial mass production. Particular attention is paid to the development of AlOx /SiNy layer stacks with excellent rear surface passivation properties and low production costs. In addition, we summarize the most important research results and technological improvements of industrially processed local aluminum rear contacts. Furthermore, we describe the most relevant process flows to manufacture industrial PERC cells and address silicon wafer material requirements regarding high and stable charge carrier lifetimes. An outlook is provided on future development opportunities, which may further increase the conversion efficiency and the energy yield of industrial PERC solar cells.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
A Fell; K R McIntosh; P P Altermatt; G J M Janssen; R Stangl; A Ho-Baillie; H Steinkemper; J Greulich; M Muller; B Min; K C Fong; M Hermle; I G Romijn; M D Abbott
Input parameters for the simulation of silicon solar cells in 2014 Artikel
In: IEEE Journal of Photovoltaics, Bd. 5, Nr. 4, S. 1250-1263, 2015.
@article{Fell2015,
title = {Input parameters for the simulation of silicon solar cells in 2014},
author = {A Fell and K R McIntosh and P P Altermatt and G J M Janssen and R Stangl and A Ho-Baillie and H Steinkemper and J Greulich and M Muller and B Min and K C Fong and M Hermle and I G Romijn and M D Abbott},
doi = {10.1109/JPHOTOV.2015.2430016},
year = {2015},
date = {2015-07-01},
journal = {IEEE Journal of Photovoltaics},
volume = {5},
number = {4},
pages = {1250-1263},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
B Min; H Wagner; A Dastgheib-Shirazi; P P Altermatt
Limitation of Industrial Phosphorus-diffused Emitters by SRH Recombination Artikel
In: Energy Procedia, Bd. 55, S. 115-120, 2014, ISSN: 1876-6102, (Proceedings of the 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014)).
@article{MIN2014115,
title = {Limitation of Industrial Phosphorus-diffused Emitters by SRH Recombination},
author = {B Min and H Wagner and A Dastgheib-Shirazi and P P Altermatt},
doi = {10.1016/j.egypro.2014.08.090},
issn = {1876-6102},
year = {2014},
date = {2014-09-19},
journal = {Energy Procedia},
volume = {55},
pages = {115-120},
note = {Proceedings of the 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014)},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
J Müller; H Hannebauer; C Mader; F Haase; K Bothe
In: IEEE Journal of Photovoltaics, Bd. 4, Nr. 2, S. 540-548, 2014.
@article{Müller2014,
title = {Dynamic infrared lifetime mapping for the measurement of the saturation current density of highly doped regions in silicon},
author = {J Müller and H Hannebauer and C Mader and F Haase and K Bothe},
doi = {10.1109/JPHOTOV.2013.2293062},
year = {2014},
date = {2014-03-01},
journal = {IEEE Journal of Photovoltaics},
volume = {4},
number = {2},
pages = {540-548},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
T Dullweber; R Hesse; V Bhosle; C Dubé
Ion-implanted PERC Solar Cells with Al2O3/SiNx Rear Passivation Artikel
In: Energy Procedia, Bd. 38, S. 430-435, 2013, ISSN: 1876-6102, (Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)).
@article{DULLWEBER2013430,
title = {Ion-implanted PERC Solar Cells with Al2O3/SiNx Rear Passivation},
author = {T Dullweber and R Hesse and V Bhosle and C Dubé},
doi = {10.1016/j.egypro.2013.07.300},
issn = {1876-6102},
year = {2013},
date = {2013-09-05},
journal = {Energy Procedia},
volume = {38},
pages = {430-435},
note = {Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
J Bullock; A Thomson; A Cuevas; B Veith; J Schmidt; A Karkkainen
In: physica status solidi (RRL) – Rapid Research Letters, Bd. 7, Nr. 8, S. 530-533, 2013.
@article{Bullock2013,
title = {Enhanced rear-side reflection and firing-stable surface passivation of silicon solar cells with capping polymer films},
author = {J Bullock and A Thomson and A Cuevas and B Veith and J Schmidt and A Karkkainen},
doi = {10.1002/pssr.201307200},
year = {2013},
date = {2013-08-01},
journal = {physica status solidi (RRL) – Rapid Research Letters},
volume = {7},
number = {8},
pages = {530-533},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
T Dullweber; C Kranz; U Baumann; R Hesse; D Walter; J Schmidt; P Altermatt; R Brendel
Silicon wafer material options for highly efficient p-type PERC solar cells Proceedings Article
In: IEEE, (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), S. 3074-3078, Tampa, FL, USA, 2013, ISBN: 978-1-4799-3299-3.
@inproceedings{Dullweber2013,
title = {Silicon wafer material options for highly efficient p-type PERC solar cells},
author = {T Dullweber and C Kranz and U Baumann and R Hesse and D Walter and J Schmidt and P Altermatt and R Brendel},
editor = {IEEE},
doi = {10.1109/PVSC.2013.6745110},
isbn = {978-1-4799-3299-3},
year = {2013},
date = {2013-06-16},
booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)},
journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference},
pages = {3074-3078},
address = {Tampa, FL, USA},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
T Dullweber; C Kranz; B Beier; B Veith; J Schmidt; B F P Roos; O Hohn; T Dippell; R Brendel
In: Solar Energy Materials and Solar Cells, Bd. 112, S. 196-201, 2013.
@article{Dullweber2013d,
title = {Inductively coupled plasma chemical vapour deposited AlOx/SiNy layer stacks for applications in high-efficiency industrial-type silicon solar cells},
author = {T Dullweber and C Kranz and B Beier and B Veith and J Schmidt and B F P Roos and O Hohn and T Dippell and R Brendel},
doi = {10.1016/j.solmat.2013.01.036},
year = {2013},
date = {2013-05-01},
journal = {Solar Energy Materials and Solar Cells},
volume = {112},
pages = {196-201},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
J Müller; K Bothe; S Herlufsen; T Ohrdes; R Brendel
In: IEEE Journal of Photovoltaics, Bd. 2, Nr. 4, S. 473-478, 2012.
@article{Müller2012c,
title = {Reverse saturation current density imaging of highly doped regions in silicon employing photoluminescence measurements},
author = {J Müller and K Bothe and S Herlufsen and T Ohrdes and R Brendel},
doi = {10.1109/JPHOTOV.2012.2201916},
year = {2012},
date = {2012-10-01},
journal = {IEEE Journal of Photovoltaics},
volume = {2},
number = {4},
pages = {473-478},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
A R Peaker; V P Markevich; B Hamilton; G Parada; A Dudas; A Pap; E Don; B Lim; J Schmidt; L Yu; Y Yoon; G Rozgonyi
Recombination via point defects and their complexes in solar silicon Artikel
In: physica status solidi (a), Bd. 209, Nr. 10, S. 1884-1893, 2012.
@article{Peaker2012,
title = {Recombination via point defects and their complexes in solar silicon},
author = {A R Peaker and V P Markevich and B Hamilton and G Parada and A Dudas and A Pap and E Don and B Lim and J Schmidt and L Yu and Y Yoon and G Rozgonyi},
doi = {10.1002/pssa.201200216},
year = {2012},
date = {2012-10-01},
journal = {physica status solidi (a)},
volume = {209},
number = {10},
pages = {1884-1893},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
T Dullweber; S Gatz; H Hannebauer; T Falcon; R Hesse; J Schmidt; R Brendel
Towards 20% efficient large-area screen-printed rear-passivated silicon solar cells* Artikel
In: Progress in Photovoltaics: Research and Applications, Bd. 20, Nr. 6, S. 630-638, 2012.
@article{Dullweber2012b,
title = {Towards 20% efficient large-area screen-printed rear-passivated silicon solar cells*},
author = {T Dullweber and S Gatz and H Hannebauer and T Falcon and R Hesse and J Schmidt and R Brendel},
doi = {10.1002/pip.1198},
year = {2012},
date = {2012-09-01},
journal = {Progress in Photovoltaics: Research and Applications},
volume = {20},
number = {6},
pages = {630-638},
keywords = {},
pubstate = {published},
tppubtype = {article}
}