@article{Folchert2020,

title = {Modeling recombination and contact resistance of poly-Si junctions},

author = {N Folchert and R Peibst and R Brendel},

doi = {10.1002/pip.3327},

year  = {2020},

date = {2020-12-01},

journal = {Progress in Photovoltaics: Research and Applications},

volume = {28},

number = {12},

pages = {1289-1307},

abstract = {We present a semi-analytical model for the calculation of the current through and the recombination in carrier-selective junctions consisting of a poly-Si/SiOx/c-Si layer stack. We calculate the recombination parameter J0 and the contact resistance ρC after solving the band-bending-problem on both sides of the interfacial oxide. Comparisons with finite-element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime-, current-voltage- and capacitance-voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J0 and ρC of our state-of-the-art poly-silicon-on-oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly-Si based junctions.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Haase2013b,

title = {Increased Front Surface Recombination by Rear-Side Laser Processing on Thin Silicon Solar Cells},

author = {F Haase and S Kajari-Schröder and U Römer and T Neubert and J H Petermann and R Peibst and N -P Harder and R Brendel},

doi = {10.1109/JPHOTOV.2013.2261573},

year  = {2013},

date = {2013-07-01},

journal = {IEEE Journal of Photovoltaics},

volume = {3},

number = {3},

pages = {976-984},

keywords = {},

pubstate = {published},

tppubtype = {article}

}