@article{Mariotti2022,

title = {Monolithic Perovskite/Silicon Tandem Solar Cells Fabricated Using Industrial p-Type Polycrystalline Silicon on Oxide/Passivated Emitter and Rear Cell Silicon Bottom Cell Technology},

author = {S Mariotti and K Jäger and M Diederich and M S Härtel and B Li and K Sveinbjörnsson and S Kajari-Schröder and R Peibst and S Albrecht and L Korte and T Wietler},

doi = {10.1002/solr.202101066},

year  = {2022},

date = {2022-04-01},

urldate = {2022-02-08},

journal = {Solar RRL},

volume = {6},

issue = {4},

pages = {2101066},

abstract = {Combining a perovskite top cell with a conventional passivated emitter and rear cell (PERC) silicon bottom cell in a monolithically integrated tandem device is an economically attractive solution to boost the power conversion efficiency (PCE) of silicon single-junction technology. Proof-of-concept perovskite/silicon tandem solar cells using high-temperature stable bottom cells featuring a polycrystalline silicon on oxide (POLO) front junction and a PERC-type passivated rear side with local aluminum-p+ contacts are reported. For this PERC/POLO cell, a process flow that is compatible with industrial, mainstream PERC technology is implemented. Top and bottom cells are connected via a tin-doped indium oxide recombination layer. The recombination layer formation on the POLO front junction of the bottom cell is optimized by postdeposition annealing and mitigation of sputter damage. The perovskite top cell is monolithically integrated in a p−i−n junction device architecture. Proof-of-concept tandem cells demonstrate a PCE of up to 21.3%. Based on the experimental findings and supporting optical simulations, major performance enhancements by process and layer optimization are identified and a PCE potential of 29.5% for these perovskite/silicon tandem solar cells with PERC-like bottom cell technology is estimated.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}