Veröffentlichungen
2018 |
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B. A. Veith-Wolf, S. Schäfer, R. Brendel, and J. Schmidt Solar Energy Materials and Solar Cells 186 , 194-199, (2018), ISSN: 0927-0248. Abstract | Links | BibTeX | Schlagwörter: Aluminum oxide, Auger recombination, charge carrier lifetime, Intrinsic lifetime, silicon, surface passivation @article{Veith-Wolf2018b,
title = {Reassessment of intrinsic lifetime limit in n-type crystalline silicon and implication on maximum solar cell efficiency}, author = {B A Veith-Wolf and S Schäfer and R Brendel and J Schmidt}, doi = {10.1016/j.solmat.2018.06.029}, issn = {0927-0248}, year = {2018}, date = {2018-11-01}, journal = {Solar Energy Materials and Solar Cells}, volume = {186}, pages = {194-199}, abstract = {Unusually high carrier lifetimes are measured by photoconductance decay on n-type Czochralski-grown silicon wafers of different doping concentrations, passivated using plasma-assisted atomic-layer-deposited aluminum oxide (Al2O3) on both wafer surfaces. The measured effective lifetimes significantly exceed the intrinsic lifetime limit previously reported in the literature. Several prerequisites have to be fulfilled to allow the measurement of such high lifetimes on Al2O3-passivated n-type silicon wafers: (i) large-area wafers are required to minimize the impact of edge recombination via the Al2O3-charge-induced inversion layer, (ii) an exceptionally homogeneous Al2O3 surface passivation is required, and (iii) very thick silicon wafers are needed. Based on our lifetime measurements on n-type silicon wafers of different doping concentrations, we introduce a new parameterization of the intrinsic lifetime for n-type crystalline silicon. This new parameterization has implications concerning the maximum reachable efficiency of n-type silicon solar cells, which is larger than assumed before.}, keywords = {Aluminum oxide, Auger recombination, charge carrier lifetime, Intrinsic lifetime, silicon, surface passivation}, pubstate = {published}, tppubtype = {article} } Unusually high carrier lifetimes are measured by photoconductance decay on n-type Czochralski-grown silicon wafers of different doping concentrations, passivated using plasma-assisted atomic-layer-deposited aluminum oxide (Al2O3) on both wafer surfaces. The measured effective lifetimes significantly exceed the intrinsic lifetime limit previously reported in the literature. Several prerequisites have to be fulfilled to allow the measurement of such high lifetimes on Al2O3-passivated n-type silicon wafers: (i) large-area wafers are required to minimize the impact of edge recombination via the Al2O3-charge-induced inversion layer, (ii) an exceptionally homogeneous Al2O3 surface passivation is required, and (iii) very thick silicon wafers are needed. Based on our lifetime measurements on n-type silicon wafers of different doping concentrations, we introduce a new parameterization of the intrinsic lifetime for n-type crystalline silicon. This new parameterization has implications concerning the maximum reachable efficiency of n-type silicon solar cells, which is larger than assumed before.
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F. Haase, S. Schäfer, C. Klamt, F. Kiefer, J. Krügener, R. Brendel, and R. Peibst IEEE Journal of Photovoltaics 8 (1), 23-29, (2018), ISSN: 2156-3381. Abstract | Links | BibTeX | Schlagwörter: Area measurement, charge carrier lifetime, Charge carrier lifetime analysis, Current measurement, Density measurement, Lighting, passivating contacts, perimeter recombination, Photovoltaic cells, Radiative recombination @article{Haase2018,
title = {Perimeter Recombination in 25%-Efficient IBC Solar Cells With Passivating POLO Contacts for Both Polarities}, author = {F Haase and S Schäfer and C Klamt and F Kiefer and J Krügener and R Brendel and R Peibst}, doi = {10.1109/JPHOTOV.2017.2762592}, issn = {2156-3381}, year = {2018}, date = {2018-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {8}, number = {1}, pages = {23-29}, abstract = {We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2 × 2 cm2 -sized cell is processed on a 100 mm wafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 Ω cm and even 0.9%abs for a wafer resistivity of 80 Ω cm.}, keywords = {Area measurement, charge carrier lifetime, Charge carrier lifetime analysis, Current measurement, Density measurement, Lighting, passivating contacts, perimeter recombination, Photovoltaic cells, Radiative recombination}, pubstate = {published}, tppubtype = {article} } We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2 × 2 cm2 -sized cell is processed on a 100 mm wafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 Ω cm and even 0.9%abs for a wafer resistivity of 80 Ω cm.
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2017 |
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C. Gemmel, J. Hensen, S. Kajari-Schröder, and R. Brendel IEEE Journal of Photovoltaics 7 (2), 430-436, (2017), ISSN: 2156-3381. Abstract | Links | BibTeX | Schlagwörter: charge carrier lifetime, Epitaxial growth, Epitaxy, Gettering, minority carrier lifetime, porous silicon (PSI), silicon, Substrates, Surface treatment, Temperature measurement @article{Gemmel2017,
title = {4.5 ms Effective Carrier Lifetime in Kerfless Epitaxial Silicon Wafers From the Porous Silicon Process}, author = {C Gemmel and J Hensen and S Kajari-Schröder and R Brendel}, doi = {10.1109/JPHOTOV.2016.2642640}, issn = {2156-3381}, year = {2017}, date = {2017-03-01}, journal = {IEEE Journal of Photovoltaics}, volume = {7}, number = {2}, pages = {430-436}, abstract = {Kerfless silicon wafers epitaxially grown on porous silicon (PSI) and subsequently detached from the growth substrate are a promising candidate for reducing the cost of the silicon wafer, which is particularly important for silicon photovoltaics. However, the carrier lifetime of these epitaxial wafers has to be at least as high as that of today's standard Czochralski (Cz)-grown wafers in order to become competitive. Here, we compare the measured lifetimes of n-type epitaxial silicon wafers that grow on PSI and epitaxial silicon wafers that grow on nonporous surfaces of epi-ready wafers. The latter are subsequently ground to have free-standing epitaxial wafers. Gettering improves the carrier lifetime of the ground wafers up to 4.2 ms. In contrast, PSI wafers show regions with effective lifetimes of 4.5 ms, even without gettering. This lifetime value is a factor of four larger than lifetimes of Cz wafers which are typically employed in today's PERC solar cells. We model the lifetime measurements with three Shockley-Read-Hall (SRH) defects: two defects that exist in the PSI and in the epi-ready wafer and a third defect that is only present in the epi-ready wafer.}, keywords = {charge carrier lifetime, Epitaxial growth, Epitaxy, Gettering, minority carrier lifetime, porous silicon (PSI), silicon, Substrates, Surface treatment, Temperature measurement}, pubstate = {published}, tppubtype = {article} } Kerfless silicon wafers epitaxially grown on porous silicon (PSI) and subsequently detached from the growth substrate are a promising candidate for reducing the cost of the silicon wafer, which is particularly important for silicon photovoltaics. However, the carrier lifetime of these epitaxial wafers has to be at least as high as that of today's standard Czochralski (Cz)-grown wafers in order to become competitive. Here, we compare the measured lifetimes of n-type epitaxial silicon wafers that grow on PSI and epitaxial silicon wafers that grow on nonporous surfaces of epi-ready wafers. The latter are subsequently ground to have free-standing epitaxial wafers. Gettering improves the carrier lifetime of the ground wafers up to 4.2 ms. In contrast, PSI wafers show regions with effective lifetimes of 4.5 ms, even without gettering. This lifetime value is a factor of four larger than lifetimes of Cz wafers which are typically employed in today's PERC solar cells. We model the lifetime measurements with three Shockley-Read-Hall (SRH) defects: two defects that exist in the PSI and in the epi-ready wafer and a third defect that is only present in the epi-ready wafer.
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2016 |
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V. Steckenreiter, J. Hensen, A. Knorr, S. Kajari-Schröder, and R. Brendel Reuse of substrate wafers for the porous silicon layer transfer Artikel IEEE Journal of Photovoltaics 6 (3), 783-790, (2016). Abstract | Links | BibTeX | Schlagwörter: Carrier lifetime, charge carrier lifetime, Contamination, Epitaxial growth, epitaxial layer, Epitaxial layers, layer transfer, Photovoltaic systems, porous silicon (PSI) process, silicon, substrate reuse, Substrates @article{Steckenreiter2016b,
title = {Reuse of substrate wafers for the porous silicon layer transfer}, author = {V Steckenreiter and J Hensen and A Knorr and S Kajari-Schröder and R Brendel}, doi = {10.1109/JPHOTOV.2016.2545406}, year = {2016}, date = {2016-05-01}, journal = {IEEE Journal of Photovoltaics}, volume = {6}, number = {3}, pages = {783-790}, abstract = {The reuse of the silicon substrate is a key component in the kerfless-porous-silicon-based wafering process. Starting with a boron-doped p+-type substrate, a porous double layer is created, reorganized in a hydrogen bake, and then serves as a substrate for silicon homoepitaxy. After lift-off, the silicon substrate is wet chemically reconditioned and reporosified to serve again as a substrate for epitaxial layer deposition. We reduce the substrate consumption per cycle to 5 ± 0.3 μm/side and demonstrate 14 uses on a 6-in wafer. We investigate the impact of the reuse sequence on the epitaxial layer quality by carrier lifetime measurements. Starting with the third reuse, a pattern becomes visible in lifetime mappings. We observe a degradation of the minority carrier lifetime from 15 to 7 μs after 13 reuses.}, keywords = {Carrier lifetime, charge carrier lifetime, Contamination, Epitaxial growth, epitaxial layer, Epitaxial layers, layer transfer, Photovoltaic systems, porous silicon (PSI) process, silicon, substrate reuse, Substrates}, pubstate = {published}, tppubtype = {article} } The reuse of the silicon substrate is a key component in the kerfless-porous-silicon-based wafering process. Starting with a boron-doped p+-type substrate, a porous double layer is created, reorganized in a hydrogen bake, and then serves as a substrate for silicon homoepitaxy. After lift-off, the silicon substrate is wet chemically reconditioned and reporosified to serve again as a substrate for epitaxial layer deposition. We reduce the substrate consumption per cycle to 5 ± 0.3 μm/side and demonstrate 14 uses on a 6-in wafer. We investigate the impact of the reuse sequence on the epitaxial layer quality by carrier lifetime measurements. Starting with the third reuse, a pattern becomes visible in lifetime mappings. We observe a degradation of the minority carrier lifetime from 15 to 7 μs after 13 reuses.
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S. Schäfer, C. Gemmel, S. Kajari-Schröder, and R. Brendel Light trapping and surface passivation of micron-scaled macroporous blind holes Artikel IEEE Journal of Photovoltaics 6 (2), 397-403, (2016). Abstract | Links | BibTeX | Schlagwörter: Absorption, charge carrier lifetime, Current density, Etching, Optical losses, optical reflectivity, Optical variables measurement, silicon, Surface texture @article{Schäfer2016,
title = {Light trapping and surface passivation of micron-scaled macroporous blind holes}, author = {S Schäfer and C Gemmel and S Kajari-Schröder and R Brendel}, doi = {10.1109/JPHOTOV.2015.2505179}, year = {2016}, date = {2016-03-01}, journal = {IEEE Journal of Photovoltaics}, volume = {6}, number = {2}, pages = {397-403}, abstract = {We fabricate a blind hole surface texture by anodic etching of macroporous Si. The blind holes, i.e., pores that do not penetrate the wafer completely, have an average diameter of 2.7 μm, a distance of 4 μm, and a depth of 9 μm. This texture is capable of reducing the AM1.5G photon flux-weighted front reflectance to 1.5% without depositing an antireflection coating. The μm-feature size makes it a less fragile alternative to common nm-sized black silicon structures. We passivate the blind holes by atomic layer deposited AlOx. The blind hole texture allows for a carrier lifetime of (2.2 ± 0.25) ms corresponding to an effective surface recombination velocity of (8 ± 1.5) cm/s with respect to the macroscopic front surface. A direct comparison of the optical performance and the surface passivation quality with a standard SiNx-coated random pyramid surface shows that blind holes allow for a relative efficiency gain of (3 ± 0.2)% when applied, e.g., in an otherwise perfect back-contacted solar cell.}, keywords = {Absorption, charge carrier lifetime, Current density, Etching, Optical losses, optical reflectivity, Optical variables measurement, silicon, Surface texture}, pubstate = {published}, tppubtype = {article} } We fabricate a blind hole surface texture by anodic etching of macroporous Si. The blind holes, i.e., pores that do not penetrate the wafer completely, have an average diameter of 2.7 μm, a distance of 4 μm, and a depth of 9 μm. This texture is capable of reducing the AM1.5G photon flux-weighted front reflectance to 1.5% without depositing an antireflection coating. The μm-feature size makes it a less fragile alternative to common nm-sized black silicon structures. We passivate the blind holes by atomic layer deposited AlOx. The blind hole texture allows for a carrier lifetime of (2.2 ± 0.25) ms corresponding to an effective surface recombination velocity of (8 ± 1.5) cm/s with respect to the macroscopic front surface. A direct comparison of the optical performance and the surface passivation quality with a standard SiNx-coated random pyramid surface shows that blind holes allow for a relative efficiency gain of (3 ± 0.2)% when applied, e.g., in an otherwise perfect back-contacted solar cell.
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2014 |
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S. Herlufsen, K. Bothe, R. Brendel, and J. Schmidt Dynamic Photoluminescence Lifetime Imaging for Injection-dependent Lifetime Measurements Artikel Energy Procedia 55 , 77-84, (2014), ISSN: 1876-6102, (Proceedings of the 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014)). Links | BibTeX | Schlagwörter: charge carrier lifetime, photoluminescence, silicon @article{HERLUFSEN201477,
title = {Dynamic Photoluminescence Lifetime Imaging for Injection-dependent Lifetime Measurements}, author = {S Herlufsen and K Bothe and R Brendel and J Schmidt}, doi = {10.1016/j.egypro.2014.08.081}, issn = {1876-6102}, year = {2014}, date = {2014-09-19}, journal = {Energy Procedia}, volume = {55}, pages = {77-84}, note = {Proceedings of the 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014)}, keywords = {charge carrier lifetime, photoluminescence, silicon}, pubstate = {published}, tppubtype = {article} } |
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B. Veith, T. Ohrdes, F. Werner, R. Brendel, P. P. Altermatt, N. -P. Harder, and J. Schmidt Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: an edge effect? Artikel Solar Energy Materials and Solar Cells 120 (Part A), 436-440, (2014). Links | BibTeX | Schlagwörter: Aluminum oxide, charge carrier lifetime, modeling, silicon, surface passivation @article{Veith2014,
title = {Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: an edge effect?}, author = {B Veith and T Ohrdes and F Werner and R Brendel and P P Altermatt and N -P Harder and J Schmidt}, doi = {10.1016/j.solmat.2013.06.049}, year = {2014}, date = {2014-01-01}, journal = {Solar Energy Materials and Solar Cells}, volume = {120}, number = {Part A}, pages = {436-440}, keywords = {Aluminum oxide, charge carrier lifetime, modeling, silicon, surface passivation}, pubstate = {published}, tppubtype = {article} } |
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A. L. Blum, J. S. Swirhun, R. A. Sinton, F. Yan, S. Herasimenka, T. Roth, K. Lauer, J. Haunschild, B. Lim, K. Bothe, Z. Hameiri, B. Seipel, R. Xiong, M. Dhamrin, and J. D. Murphy Inter-laboratory study of eddy-current measurement of excess carrier recombination lifetime Artikel IEEE Journal of Photovoltaics 4 (1), 525-531, (2014). Links | BibTeX | Schlagwörter: Atmospheric measurements, charge carrier lifetime, eddy currents, Electrical resistance measurement, Instruments, Laboratories, Particle measurements, photoconductivity, silicon, Standards, Transient analysis @article{Blum2014,
title = {Inter-laboratory study of eddy-current measurement of excess carrier recombination lifetime}, author = {A L Blum and J S Swirhun and R A Sinton and F Yan and S Herasimenka and T Roth and K Lauer and J Haunschild and B Lim and K Bothe and Z Hameiri and B Seipel and R Xiong and M Dhamrin and J D Murphy}, doi = {10.1109/JPHOTOV.2013.2284375}, year = {2014}, date = {2014-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {4}, number = {1}, pages = {525-531}, keywords = {Atmospheric measurements, charge carrier lifetime, eddy currents, Electrical resistance measurement, Instruments, Laboratories, Particle measurements, photoconductivity, silicon, Standards, Transient analysis}, pubstate = {published}, tppubtype = {article} } |
2013 |
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A. L. Blum, J. S. Swirhun, R. A. Sinton, F. Yan, S. Herasimenka, T. Roth, K. Lauer, J. Haunschild, B. Lim, K. Bothe, Z. Hameiri, B. Seipel, R. Xiong, M. Dhamrin, and J. D. Murphy Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime Inproceedings IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 1396-1401, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3. Links | BibTeX | Schlagwörter: Atmospheric measurements, charge carrier lifetime, eddy currents, Electrical resistance measurement, Instruments, Laboratories, Particle measurements, photoconductivity, silicon, Standards, Transient analysis @inproceedings{Blum2013,
title = {Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime}, author = {A L Blum and J S Swirhun and R A Sinton and F Yan and S Herasimenka and T Roth and K Lauer and J Haunschild and B Lim and K Bothe and Z Hameiri and B Seipel and R Xiong and M Dhamrin and J D Murphy}, editor = {IEEE}, doi = {10.1109/PVSC.2013.6744405}, isbn = {978-1-4799-3299-3}, year = {2013}, date = {2013-06-16}, booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) }, journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference}, pages = {1396-1401}, address = {Tampa, FL, USA}, keywords = {Atmospheric measurements, charge carrier lifetime, eddy currents, Electrical resistance measurement, Instruments, Laboratories, Particle measurements, photoconductivity, silicon, Standards, Transient analysis}, pubstate = {published}, tppubtype = {inproceedings} } |
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T. Dullweber, C. Kranz, U. Baumann, R. Hesse, D. Walter, J. Schmidt, P. Altermatt, and R. Brendel Silicon wafer material options for highly efficient p-type PERC solar cells Inproceedings IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 3074-3078, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3. Links | BibTeX | Schlagwörter: charge carrier lifetime, Conductivity, Degradation, light-induced degradation, PERC, Photovoltaic cells, Semiconductor device modeling, silicon, silicon solar cells @inproceedings{Dullweber2013,
title = {Silicon wafer material options for highly efficient p-type PERC solar cells}, author = {T Dullweber and C Kranz and U Baumann and R Hesse and D Walter and J Schmidt and P Altermatt and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2013.6745110}, isbn = {978-1-4799-3299-3}, year = {2013}, date = {2013-06-16}, booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) }, journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference}, pages = {3074-3078}, address = {Tampa, FL, USA}, keywords = {charge carrier lifetime, Conductivity, Degradation, light-induced degradation, PERC, Photovoltaic cells, Semiconductor device modeling, silicon, silicon solar cells}, pubstate = {published}, tppubtype = {inproceedings} } |
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J. Schmidt, B. Lim, D. Walter, K. Bothe, S. Gatz, T. Dullweber, and P. P. Altermatt Impurity-related limitations of next-generation industrial silicon solar cells Artikel IEEE Journal of Photovoltaics 3 (1), 114-118, (2013). Links | BibTeX | Schlagwörter: charge carrier lifetime, Curing, Impurities, Iron, Photovoltaic cells, Photovoltaic systems, Semiconductor device modeling, silicon @article{Schmidt2013,
title = {Impurity-related limitations of next-generation industrial silicon solar cells}, author = {J Schmidt and B Lim and D Walter and K Bothe and S Gatz and T Dullweber and P P Altermatt}, doi = {10.1109/JPHOTOV.2012.2210030}, year = {2013}, date = {2013-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {3}, number = {1}, pages = {114-118}, keywords = {charge carrier lifetime, Curing, Impurities, Iron, Photovoltaic cells, Photovoltaic systems, Semiconductor device modeling, silicon}, pubstate = {published}, tppubtype = {article} } |
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S. Herlufsen, D. Hinken, M. Offer, J. Schmidt, and K. Bothe IEEE Journal of Photovoltaics 3 (1), 381-386, (2013). Links | BibTeX | Schlagwörter: calibration, Carrier lifetime, Charge carrier density, charge carrier lifetime, crystalline silicon wafers, Density measurement, Imaging, photoconductance (PC), photoluminescence, photoluminescence (PL), Photonics, silicon @article{Herlufsen2013,
title = {Validity of calibrated photoluminescence lifetime measurements of silicon wafers for arbitrary lifetime and injection ranges}, author = {S Herlufsen and D Hinken and M Offer and J Schmidt and K Bothe}, doi = {10.1109/JPHOTOV.2012.2218794}, year = {2013}, date = {2013-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {3}, number = {1}, pages = {381-386}, keywords = {calibration, Carrier lifetime, Charge carrier density, charge carrier lifetime, crystalline silicon wafers, Density measurement, Imaging, photoconductance (PC), photoluminescence, photoluminescence (PL), Photonics, silicon}, pubstate = {published}, tppubtype = {article} } |
2012 |
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J. Müller, K. Bothe, S. Herlufsen, H. Hannebauer, R. Ferre, and R. Brendel Solar Energy Materials and Solar Cells 106 , 76-79, (2012), (SiliconPV). Links | BibTeX | Schlagwörter: charge carrier lifetime, diffusion, Photolumincescence, Reverse saturation current density @article{Müller2012d,
title = {Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach}, author = {J Müller and K Bothe and S Herlufsen and H Hannebauer and R Ferre and R Brendel}, doi = {10.1016/j.solmat.2012.05.026}, year = {2012}, date = {2012-11-01}, journal = {Solar Energy Materials and Solar Cells}, volume = {106}, pages = {76-79}, note = {SiliconPV}, keywords = {charge carrier lifetime, diffusion, Photolumincescence, Reverse saturation current density}, pubstate = {published}, tppubtype = {article} } |
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S. Herlufsen, K. Bothe, J. Schmidt, R. Brendel, and S. Siegmund Dynamic photoluminescence lifetime imaging of multicrystalline silicon bricks Artikel Solar Energy Materials and Solar Cells 106 , 42-46, (2012), (SiliconPV). Links | BibTeX | Schlagwörter: Bricks, charge carrier lifetime, photoluminescence, silicon @article{Herlufsen2012b,
title = {Dynamic photoluminescence lifetime imaging of multicrystalline silicon bricks}, author = {S Herlufsen and K Bothe and J Schmidt and R Brendel and S Siegmund}, doi = {10.1016/j.solmat.2012.06.002}, year = {2012}, date = {2012-11-01}, journal = {Solar Energy Materials and Solar Cells}, volume = {106}, pages = {42-46}, note = {SiliconPV}, keywords = {Bricks, charge carrier lifetime, photoluminescence, silicon}, pubstate = {published}, tppubtype = {article} } |
2009 |
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M. A. Kessler, T. Ohrdes, B. Wolpensinger, R. Bock, and N. P. Harder IEEE (Hrsg.): 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 001556-001561, Philadelphia, PA, USA, (2009), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: boron, charge carrier lifetime, Degradation, Diffusion processes, Furnaces, Glass, oxygen, Scanning electron microscopy, silicon, Temperature @inproceedings{Kessler2009,
title = {Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes}, author = {M A Kessler and T Ohrdes and B Wolpensinger and R Bock and N P Harder}, editor = {IEEE}, doi = {10.1109/PVSC.2009.5411365}, issn = {0160-8371}, year = {2009}, date = {2009-06-01}, booktitle = {2009 34th IEEE Photovoltaic Specialists Conference (PVSC)}, pages = {001556-001561}, address = {Philadelphia, PA, USA}, keywords = {boron, charge carrier lifetime, Degradation, Diffusion processes, Furnaces, Glass, oxygen, Scanning electron microscopy, silicon, Temperature}, pubstate = {published}, tppubtype = {inproceedings} } |
2008 |
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B. Lim, K. Bothe, and J. Schmidt Modeling the generation and dissociation of the boron-oxygen complex in B-Doped Cz-Si Inproceedings IEEE (Hrsg.): 2008 33rd IEEE Photovoltaic Specialists Conference, 1-4, San Diego, CA, USA, (2008), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: Annealing, charge carrier lifetime, Degradation, Lighting, Photovoltaic cells, Semiconductor device modeling, silicon, Solar power generation, Temperature, Voltage @inproceedings{Lim2008d,
title = {Modeling the generation and dissociation of the boron-oxygen complex in B-Doped Cz-Si}, author = {B Lim and K Bothe and J Schmidt}, editor = {IEEE}, doi = {10.1109/PVSC.2008.4922482}, issn = {0160-8371}, year = {2008}, date = {2008-05-01}, booktitle = {2008 33rd IEEE Photovoltaic Specialists Conference}, pages = {1-4}, address = {San Diego, CA, USA}, keywords = {Annealing, charge carrier lifetime, Degradation, Lighting, Photovoltaic cells, Semiconductor device modeling, silicon, Solar power generation, Temperature, Voltage}, pubstate = {published}, tppubtype = {inproceedings} } |