Veröffentlichungen
2016 |
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J. Krügener, F. Kiefer, R. Peibst, and H. J. Osten Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters Inproceedings IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6. Abstract | Links | BibTeX | Schlagwörter: Annealing, boron, Current density, Implants, Ion implantation, Ions, Photovoltaic cells @inproceedings{Krügener2016b,
title = {Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters}, author = {J Krügener and F Kiefer and R Peibst and H J Osten}, editor = {IEEE}, doi = {10.1109/IIT.2016.7882856}, isbn = {978-1-5090-2025-6}, year = {2016}, date = {2016-09-26}, booktitle = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)}, journal = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)}, address = {Tainan, Taiwan}, abstract = {Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type silicon solar cells. Here, experimental emitter saturation current densities are compared with simulated defect densities, namely boron interstitial clusters and dislocation loops. We report on experimental conditions, which allow separating the specific impact of both defect types on the resulting electrical properties after annealing at 1050°C and surface passivation. In that way, dislocation loops are identified to be the dominating defect species under the used implant and annealing conditions.}, keywords = {Annealing, boron, Current density, Implants, Ion implantation, Ions, Photovoltaic cells}, pubstate = {published}, tppubtype = {inproceedings} } Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type silicon solar cells. Here, experimental emitter saturation current densities are compared with simulated defect densities, namely boron interstitial clusters and dislocation loops. We report on experimental conditions, which allow separating the specific impact of both defect types on the resulting electrical properties after annealing at 1050°C and surface passivation. In that way, dislocation loops are identified to be the dominating defect species under the used implant and annealing conditions.
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J. Krügener, F. Kiefer, Y. Larionova, M. Rienäcker, F. Haase, R. Peibst, and H. J. Osten Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells Inproceedings IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6. Abstract | Links | BibTeX | Schlagwörter: boron, Doping, Ion implantation, Photovoltaic cells, Photovoltaic systems, silicon @inproceedings{Krügener2016b,
title = {Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells}, author = {J Krügener and F Kiefer and Y Larionova and M Rienäcker and F Haase and R Peibst and H J Osten}, editor = {IEEE}, doi = {10.1109/IIT.2016.7882886}, isbn = {978-1-5090-2025-6}, year = {2016}, date = {2016-09-26}, booktitle = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)}, journal = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)}, address = {Tainan, Taiwan}, abstract = {We present a brief summary about the use of ion implantation for photovoltaic applications in the past and present. Furthermore, we highlight how ion implantation might be used in the future within the fast moving field of silicon solar cells.}, keywords = {boron, Doping, Ion implantation, Photovoltaic cells, Photovoltaic systems, silicon}, pubstate = {published}, tppubtype = {inproceedings} } We present a brief summary about the use of ion implantation for photovoltaic applications in the past and present. Furthermore, we highlight how ion implantation might be used in the future within the fast moving field of silicon solar cells.
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H. Schulte-Huxel, F. Kiefer, S. Blankemeyer, R. Witteck, M. Vogt, M. Köntges, Rolf, Brendel, J. Krügener, and R. Peibst Flip-flop cell interconnection enabled by an extremely high bifaciality of screen-printed ion-implanted n-PERT Si solar cells Inproceedings WIP (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, 407-412, Munich, Germany, (2016), ISBN: 3-936338-41-8. Abstract | Links | BibTeX | Schlagwörter: Bifacial Solar Cells, Flip-Flop Module, Ion implantation, module integration, n-PERT Cells @inproceedings{Schulte-Huxel2016,
title = {Flip-flop cell interconnection enabled by an extremely high bifaciality of screen-printed ion-implanted n-PERT Si solar cells}, author = {H Schulte-Huxel and F Kiefer and S Blankemeyer and R Witteck and M Vogt and M Köntges and Rolf and Brendel and J Krügener and R Peibst}, editor = {WIP}, doi = {10.4229/EUPVSEC20162016-2CO.2.3}, isbn = {3-936338-41-8}, year = {2016}, date = {2016-09-01}, booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, pages = {407-412}, address = {Munich, Germany}, abstract = {We present bifacial fully ion implanted and screen-printed n-PERT cells, fabricated either by applying a single co-anneal process to cure the implant damage or by applying two separate anneals after boron/BF2 and phosphorous implant, respectively. In the first case of boron implant and co-anneal our best cells achieve an independently measured front (rear) side efficiency of 21.0 % (20.43 %) and for the boron implant and separate anneal the efficiency is 21.5 % (21.31 %). To the best of our knowledge these values are the highest efficiencies reported so far for fully ion implanted and screen-printed bifacial n-PERT cells. We furthermore show that light treatment of boron-implanted and co-annealed n-PERT cells increases the cell efficiency by 0.6 %abs. This diminish the efficiency gap to separately annealed cells. We measure a bifacial factor of 99.4 % that is the highest value reported so far for any high-efficiency Si cell. The high bifaciality enables an adapted module interconnection scheme called here Flip-Flop, which is based on a front-to-front and rear-to-rear interconnection of cells with alternating orientation (n+ or p+ side facing up). Based on the measured IV-characteristic of a cell with a bifacial factor of 97 % (“conservative scenario”) we demonstrate that the Flip-Flop interconnection scheme has the potential for a module efficiency improvement of 0.5 %abs on aperture area (as compared to the conventional “all cells emitter up” configuration) despite the 3 % current mismatch. We experimentally demonstrate a monofacial 16-cell Flip-Flop module that achieves an aperture area efficiency of 20.5 %. }, keywords = {Bifacial Solar Cells, Flip-Flop Module, Ion implantation, module integration, n-PERT Cells}, pubstate = {published}, tppubtype = {inproceedings} } We present bifacial fully ion implanted and screen-printed n-PERT cells, fabricated either by applying a single co-anneal process to cure the implant damage or by applying two separate anneals after boron/BF2 and phosphorous implant, respectively. In the first case of boron implant and co-anneal our best cells achieve an independently measured front (rear) side efficiency of 21.0 % (20.43 %) and for the boron implant and separate anneal the efficiency is 21.5 % (21.31 %). To the best of our knowledge these values are the highest efficiencies reported so far for fully ion implanted and screen-printed bifacial n-PERT cells. We furthermore show that light treatment of boron-implanted and co-annealed n-PERT cells increases the cell efficiency by 0.6 %abs. This diminish the efficiency gap to separately annealed cells. We measure a bifacial factor of 99.4 % that is the highest value reported so far for any high-efficiency Si cell. The high bifaciality enables an adapted module interconnection scheme called here Flip-Flop, which is based on a front-to-front and rear-to-rear interconnection of cells with alternating orientation (n+ or p+ side facing up). Based on the measured IV-characteristic of a cell with a bifacial factor of 97 % (“conservative scenario”) we demonstrate that the Flip-Flop interconnection scheme has the potential for a module efficiency improvement of 0.5 %abs on aperture area (as compared to the conventional “all cells emitter up” configuration) despite the 3 % current mismatch. We experimentally demonstrate a monofacial 16-cell Flip-Flop module that achieves an aperture area efficiency of 20.5 %.
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2015 |
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J. Krügener, R. Peibst, E. Bugiel, D. Tetzlaff, F. Kiefer, M. Jestremski, R. Brendel, and H. J. Osten Ion implantation of boric molecules for silicon solar cells Artikel Solar Energy Materials and Solar Cells 142 , 12-17, (2015), (Proceedings of the 5th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2015)). Links | BibTeX | Schlagwörter: Annealing, BF2, Ion implantation, silicon, Transmission electron microscopy @article{Krügener2015b,
title = {Ion implantation of boric molecules for silicon solar cells}, author = {J Krügener and R Peibst and E Bugiel and D Tetzlaff and F Kiefer and M Jestremski and R Brendel and H J Osten}, doi = {10.1016/j.solmat.2015.05.024}, year = {2015}, date = {2015-11-02}, journal = {Solar Energy Materials and Solar Cells}, volume = {142}, pages = {12-17}, note = {Proceedings of the 5th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2015)}, keywords = {Annealing, BF2, Ion implantation, silicon, Transmission electron microscopy}, pubstate = {published}, tppubtype = {article} } |
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U. Römer, R. Peibst, T. Ohrdes, B. Lim, J. Krügener, T. Wietler, and R. Brendel Ion implantation for poly-Si passivated back-junction back-contacted solar cells Artikel IEEE Journal of Photovoltaics 5 (2), 507-514, (2015). Links | BibTeX | Schlagwörter: Back contact solar cells, boron, Carrier Selective Contacts, Doping, Implants, Ion implantation, Junctions, Photovoltaic cells, silicon, solar energy @article{Römer2015,
title = {Ion implantation for poly-Si passivated back-junction back-contacted solar cells}, author = {U Römer and R Peibst and T Ohrdes and B Lim and J Krügener and T Wietler and R Brendel}, doi = {10.1109/JPHOTOV.2014.2382975}, year = {2015}, date = {2015-03-01}, journal = {IEEE Journal of Photovoltaics}, volume = {5}, number = {2}, pages = {507-514}, keywords = {Back contact solar cells, boron, Carrier Selective Contacts, Doping, Implants, Ion implantation, Junctions, Photovoltaic cells, silicon, solar energy}, pubstate = {published}, tppubtype = {article} } |
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R. Peibst, A. Merkle, U. Römer, B. Lim, Y. Larionova, R. Brendel, J. Krügener, E. Bugiel, M. Sheoran, and J. Graff Ion implantation as an enabling technique for the fabrication of back-junction back-contact cells within a lean process flow Sonstige Photovoltaics International Volume 27, (2015). Abstract | BibTeX | Schlagwörter: Ion implantation @misc{Peibst2015,
title = {Ion implantation as an enabling technique for the fabrication of back-junction back-contact cells within a lean process flow}, author = {R Peibst and A Merkle and U Römer and B Lim and Y Larionova and R Brendel and J Krügener and E Bugiel and M Sheoran and J Graff}, year = {2015}, date = {2015-03-01}, abstract = {Ion implantation offers significant process simplification potential for the fabrication of back-junction back-contact (BJBC) solar cells. First, the number of high-temperature steps can be reduced to one when applying a co-annealing process which includes an in situ growth of a silicon oxide passivation layer. Second, the implanted regions can be patterned in situ by utilizing shadow masks. ISFH’s results from evaluating both aspects are reported in this paper. With fully ion-implanted, co-annealed and laser-structured small-area cells, efficiencies of up to 23.41% (20mm × 20mm designated area) have now been achieved. It is shown that the excellent recombination behaviour of 156mm × 156mm BJBC cells patterned in situ implies a potential for realizing efficiencies greater than 23%; however, back-end issues have so far limited the efficiency to 22.1% (full-area measurement). Ion implantation can also be utilized for the doping of BJBC cells with carrier-selective junctions based on polycrystalline silicon. The current status of ISFH’s work in this direction is presented.}, howpublished = {Photovoltaics International Volume 27}, keywords = {Ion implantation}, pubstate = {published}, tppubtype = {misc} } Ion implantation offers significant process simplification potential for the fabrication of back-junction back-contact (BJBC) solar cells. First, the number of high-temperature steps can be reduced to one when applying a co-annealing process which includes an in situ growth of a silicon oxide passivation layer. Second, the implanted regions can be patterned in situ by utilizing shadow masks. ISFH’s results from evaluating both aspects are reported in this paper. With fully ion-implanted, co-annealed and laser-structured small-area cells, efficiencies of up to 23.41% (20mm × 20mm designated area) have now been achieved. It is shown that the excellent recombination behaviour of 156mm × 156mm BJBC cells patterned in situ implies a potential for realizing efficiencies greater than 23%; however, back-end issues have so far limited the efficiency to 22.1% (full-area measurement). Ion implantation can also be utilized for the doping of BJBC cells with carrier-selective junctions based on polycrystalline silicon. The current status of ISFH’s work in this direction is presented.
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F. Kiefer, R. Peibst, T. Ohrdes, T. Dullweber, J. Krügener, H. J. Osten, C. Schöllhorn, A. Grohe, and R. Brendel physica status solidi (a) 212 (2), 291-297, (2015). Links | BibTeX | Schlagwörter: boron emitters, Ion implantation, silicon, Solar Cells @article{Kiefer2015,
title = {Influence of the boron emitter profile on Voc and Jsc losses in fully ion implanted n-type PERT solar cells}, author = {F Kiefer and R Peibst and T Ohrdes and T Dullweber and J Krügener and H J Osten and C Schöllhorn and A Grohe and R Brendel}, doi = {10.1002/pssa.201431118}, year = {2015}, date = {2015-02-01}, journal = {physica status solidi (a)}, volume = {212}, number = {2}, pages = {291-297}, keywords = {boron emitters, Ion implantation, silicon, Solar Cells}, pubstate = {published}, tppubtype = {article} } |
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J. Krügener, R. Peibst, F. A. Wolf, E. Bugiel, T. Ohrdes, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, and H. J. Osten IEEE Journal of Photovoltaics 5 (1), 166-173, (2015). Links | BibTeX | Schlagwörter: Annealing, boron, crystal defects, Density measurement, Doping, Ion implantation, photovoltaic, rapid thermal annealing (RTA), silicon, Surface texture, Temperature measurement @article{Krügener2015,
title = {Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters}, author = {J Krügener and R Peibst and F A Wolf and E Bugiel and T Ohrdes and F Kiefer and C Schöllhorn and A Grohe and R Brendel and H J Osten}, doi = {10.1109/JPHOTOV.2014.2365468}, year = {2015}, date = {2015-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {5}, number = {1}, pages = {166-173}, keywords = {Annealing, boron, crystal defects, Density measurement, Doping, Ion implantation, photovoltaic, rapid thermal annealing (RTA), silicon, Surface texture, Temperature measurement}, pubstate = {published}, tppubtype = {article} } |
2014 |
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J. Krügener, E. Bugiel, R. Peibst, F. Kiefer, T. Ohrdes, R. Brendel, and H. J. Osten Structural investigation of ion implantation of boron on random pyramid textured Si(100) for photovoltaic applications Inproceedings Proceedings of the 20th International Conference on Ion Implantation Technology (IIT), Portland, OR, USA, (2014), ISBN: 978-1-4799-5213-7. Links | BibTeX | Schlagwörter: Annealing, crystal defects, Crystals, Ion implantation, Photovoltaic cells, process simulation, silicon, Solar Cells, Surface morphology, Surface texture, Transmission electron microscopy @inproceedings{Krügener2014,
title = {Structural investigation of ion implantation of boron on random pyramid textured Si(100) for photovoltaic applications}, author = {J Krügener and E Bugiel and R Peibst and F Kiefer and T Ohrdes and R Brendel and H J Osten}, doi = {10.1109/IIT.2014.6940060}, isbn = {978-1-4799-5213-7}, year = {2014}, date = {2014-06-26}, booktitle = {Proceedings of the 20th International Conference on Ion Implantation Technology (IIT)}, journal = {Proceedings of the 20th International Conference on Ion Implantation Technology}, address = {Portland, OR, USA}, keywords = {Annealing, crystal defects, Crystals, Ion implantation, Photovoltaic cells, process simulation, silicon, Solar Cells, Surface morphology, Surface texture, Transmission electron microscopy}, pubstate = {published}, tppubtype = {inproceedings} } |
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R. Peibst, U. Römer, Y. Larionova, H. Schulte-Huxel, T. Ohrdes, M. Häberle, B. Lim, J. Krügener, D. Stichtenoth, T. Wütherich, C. Schöllhorn, J. Graff, and R. Brendel Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions Inproceedings IEEE (Hrsg.): 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) , 0852-0856, Denver, CO, USA, (2014), ISBN: 978-1-4799-4398-2. Links | BibTeX | Schlagwörter: Back contact solar cells, Ion implantation, Junctions, metallization, module-level interconnection, passivation, Photovoltaic cell, Photovoltaic cells, Radiative recombination, silicon, solar energy @inproceedings{Peibst2014,
title = {Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions}, author = {R Peibst and U Römer and Y Larionova and H Schulte-Huxel and T Ohrdes and M Häberle and B Lim and J Krügener and D Stichtenoth and T Wütherich and C Schöllhorn and J Graff and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2014.6925049}, isbn = {978-1-4799-4398-2}, year = {2014}, date = {2014-06-08}, booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) }, journal = {Proceedings of the 40th IEEE Photovoltaic Specialists Conference}, pages = {0852-0856}, address = {Denver, CO, USA}, keywords = {Back contact solar cells, Ion implantation, Junctions, metallization, module-level interconnection, passivation, Photovoltaic cell, Photovoltaic cells, Radiative recombination, silicon, solar energy}, pubstate = {published}, tppubtype = {inproceedings} } |
2013 |
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M. Ernst, H. Schulte-Huxel, R. Niepelt, S. Kajari-Schröder, and R. Brendel Thin Crystalline Macroporous Silicon Solar Cells with Ion Implanted Emitter Artikel Energy Procedia 38 , 910-918, (2013), ISSN: 1876-6102, (Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)). Links | BibTeX | Schlagwörter: Ion implantation, kerf-free, layer transfer, macroporous silicon, thin films. @article{ERNST2013910,
title = {Thin Crystalline Macroporous Silicon Solar Cells with Ion Implanted Emitter}, author = {M Ernst and H Schulte-Huxel and R Niepelt and S Kajari-Schröder and R Brendel}, doi = {10.1016/j.egypro.2013.07.364}, issn = {1876-6102}, year = {2013}, date = {2013-09-05}, journal = {Energy Procedia}, volume = {38}, pages = {910-918}, note = {Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)}, keywords = {Ion implantation, kerf-free, layer transfer, macroporous silicon, thin films.}, pubstate = {published}, tppubtype = {article} } |
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T. Dullweber, R. Hesse, V. Bhosle, and C. Dubé Ion-implanted PERC Solar Cells with Al2O3/SiNx Rear Passivation Artikel Energy Procedia 38 , 430-435, (2013), ISSN: 1876-6102, (Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)). Links | BibTeX | Schlagwörter: AlO rear passivation, Ion implantation, phosphorus emitter, silicon solar cells @article{DULLWEBER2013430,
title = {Ion-implanted PERC Solar Cells with Al2O3/SiNx Rear Passivation}, author = {T Dullweber and R Hesse and V Bhosle and C Dubé}, doi = {10.1016/j.egypro.2013.07.300}, issn = {1876-6102}, year = {2013}, date = {2013-09-05}, journal = {Energy Procedia}, volume = {38}, pages = {430-435}, note = {Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)}, keywords = {AlO rear passivation, Ion implantation, phosphorus emitter, silicon solar cells}, pubstate = {published}, tppubtype = {article} } |
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U. Römer, R. Peibst, T. Ohrdes, Y. Larionova, N. -P. Harder, R. Brendel, A. Grohe, D. Stichtenoth, T. Wütherich, C. Schöllhorn, H. -J. Krokoszinski, and J. Graff Counterdoping with Patterned Ion Implantation Inproceedings IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 1280-1284, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3. Links | BibTeX | Schlagwörter: Annealing, boron, Implants, Ion implantation, Photovoltaic cell, Photovoltaic cells, silicon, solar energy, Tunneling, Voltage measurement @inproceedings{Römer2013,
title = {Counterdoping with Patterned Ion Implantation}, author = {U Römer and R Peibst and T Ohrdes and Y Larionova and N -P Harder and R Brendel and A Grohe and D Stichtenoth and T Wütherich and C Schöllhorn and H -J Krokoszinski and J Graff}, editor = {IEEE}, doi = {10.1109/PVSC.2013.6744375}, isbn = {978-1-4799-3299-3}, year = {2013}, date = {2013-06-16}, booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) }, journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference}, pages = {1280-1284}, address = {Tampa, FL, USA}, keywords = {Annealing, boron, Implants, Ion implantation, Photovoltaic cell, Photovoltaic cells, silicon, solar energy, Tunneling, Voltage measurement}, pubstate = {published}, tppubtype = {inproceedings} } |