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29 Einträge « 1 von 2 »

2017

M. Rienäcker, M. Bossmeyer, A. Merkle, U. Römer, F. Haase, J. Krügener, R. Brendel, and R. Peibst

Junction resistivity of carrier-selective polysilicon on oxide junctions and its impact on solar cell performance Artikel

IEEE Journal of Photovoltaics 7 (1), 11-18, (2017), ISSN: 2156-3381.

Abstract | Links | BibTeX | Schlagwörter: Aluminum, Back-junction back-contact (BJBC) cells, boron, Conductivity, contact resistivity, Current density, Junctions, Photovoltaic cells, polysilicon, polysilicon on oxide (POLO) junctions, recombination, selective contacts, selectivity

2016

T. Dullweber, N. Wehmeier, A. Nowack, T. Brendemühl, S. Kajari-Schröder, and R. Brendel

Industrial bifacial n-type silicon solar cells applying a boron co-diffused rear emitter and an aluminum rear finger grid Artikel

physica status solidi (a) 213 (11), 3046-3052, (2016).

Abstract | Links | BibTeX | Schlagwörter: Aluminum, boron, boron silicate glass, emitters, silicon, Solar Cells

J. Krügener, F. Kiefer, R. Peibst, and H. J. Osten

Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters Inproceedings

IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6.

Abstract | Links | BibTeX | Schlagwörter: Annealing, boron, Current density, Implants, Ion implantation, Ions, Photovoltaic cells

J. Krügener, F. Kiefer, Y. Larionova, M. Rienäcker, F. Haase, R. Peibst, and H. J. Osten

Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells Inproceedings

IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6.

Abstract | Links | BibTeX | Schlagwörter: boron, Doping, Ion implantation, Photovoltaic cells, Photovoltaic systems, silicon

J. Krügener, D. Tetzlaff, Y. Larionova, Y. Barnscheidt, S. Reiter, M. Turcu, R. Peibst, J. -D. Kähler, and T. Wietler

Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells Inproceedings

IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6.

Abstract | Links | BibTeX | Schlagwörter: Annealing, boron, Conductivity, Junctions, Resistance, silicon, Temperature measurement

J. Krügener, Y. Larionova, B. Wolpensinger, D. Tetzlaff, S. Reiter, M. Turcu, R. Peibst, J. -D. Kähler, and T. Wietler

Dopant diffusion from p+-poly-Si into c-Si during thermal annealing Inproceedings

IEEE (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2451-2454, Portland, OR, USA, (2016), ISBN: 978-1-5090-2725-5.

Abstract | Links | BibTeX | Schlagwörter: Annealing, boron, diffusion, junction formation, Junctions, low pressure chemical vapor deposition, passivating contacts, Resistance, Scanning electron microscopy, silicon, Substrates, Temperature measurement

B. Lim, T. Brendemühl, T. Dullweber, and R. Brendel

Loss analysis of n-type passivated emitter and rear totally diffused back-junction silicon solar cells with efficiencies up to 21.2% Artikel

IEEE Journal of Photovoltaics 6 (2), 447-453, (2016).

Abstract | Links | BibTeX | Schlagwörter: boron, Current density, Layout, Phosphorus, Photovoltaic cells, Resistance, silicon, Simulation

N. Wehmeier, B. Lim, A. Merkle, A. Tempez, S. Legendre, H. Wagner, A. Nowack, T. Dullweber, and P. P. Altermatt

PECVD BSG diffusion sources for simplified high-efficiency n-PERT BJ and BJBC solar cells Artikel

IEEE Journal of Photovoltaics 6 (1), 119-125, (2016).

Abstract | Links | BibTeX | Schlagwörter: Back-junction back-contact (BJBC) cell, boron, boron diffusion source, codiffusion, Conductivity, Fabrication, Furnaces, n-PERT solar cell, Photovoltaic cells, Plasma measurements, plasma-enhanced chemical vapor deposition (PECVD) boron silicate glass (BSG), silicon, simulation model

2015

U. Römer, R. Peibst, T. Ohrdes, B. Lim, J. Krügener, T. Wietler, and R. Brendel

Ion implantation for poly-Si passivated back-junction back-contacted solar cells Artikel

IEEE Journal of Photovoltaics 5 (2), 507-514, (2015).

Links | BibTeX | Schlagwörter: Back contact solar cells, boron, Carrier Selective Contacts, Doping, Implants, Ion implantation, Junctions, Photovoltaic cells, silicon, solar energy

J. Krügener, R. Peibst, F. A. Wolf, E. Bugiel, T. Ohrdes, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, and H. J. Osten

Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters Artikel

IEEE Journal of Photovoltaics 5 (1), 166-173, (2015).

Links | BibTeX | Schlagwörter: Annealing, boron, crystal defects, Density measurement, Doping, Ion implantation, photovoltaic, rapid thermal annealing (RTA), silicon, Surface texture, Temperature measurement

2014

D. Walter, B. Lim, V. V. Voronkov, R. Falster, and J. Schmidt

Investigation of the lifetime stability after regeneration in boron-doped Cz silicon Inproceedings

WIP (Hrsg.): Proceedings of the 29th European Photovoltaic Solar Energy Conference, 555-559, Amsterdam, The Netherlands, (2014), ISBN: 3-936338-34-5.

Links | BibTeX | Schlagwörter: boron, defects, Lifetime, oxygen, Stability

F. Kiefer, R. Peibst, T. Ohrdes, J. Krügener, H. J. Osten, and R. Brendel

Emitter recombination current densities of boron emitters with silver/aluminum pastes Inproceedings

IEEE (Hrsg.): 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) , 2808-2812, Denver, CO, USA, (2014), ISBN: 978-1-4799-4398-2.

Links | BibTeX | Schlagwörter: boron, Current density, emitter, Implants, metallization, Photovoltaic cells, screen print, silicon, surface recombination

D. C. Walter, B. Lim, K. Bothe, V. V. Voronkov, R. Falster, and J. Schmidt

Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon Artikel

Applied Physics Letters 104 (4), 042111, (2014).

Links | BibTeX | Schlagwörter: boron, illumination, nucleation, semiconductor device fabrication, surface passivation

2013

V. V. Voronkov, R. Falster, K. Bothe, and B. Lim

Light-induced Lifetime Degradation in Boron-doped Czochralski Silicon: Are Oxygen Dimers Involved? Artikel

Energy Procedia 38 , 636-641, (2013), ISSN: 1876-6102, (Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)).

Links | BibTeX | Schlagwörter: boron, lifetime degradation, oxygen, silicon

N. Wehmeier, G. Schraps, H. Wagner, B. Lim, N. -P. Harder, and P. P. Altermatt

Boron-doped PECVD silicon oxides as diffusion sources for simplified high-efficiency solar cell fabrication Inproceedings

WIP (Hrsg.): Proceedings of the 28th European Photovoltaic Solar Energy Conference, 1980-1984, Paris, France, (2013), ISBN: 3-936338-33-7.

Links | BibTeX | Schlagwörter: boron, diffusion, Oxides, PECVD, Simulation

U. Römer, R. Peibst, T. Ohrdes, Y. Larionova, N. -P. Harder, R. Brendel, A. Grohe, D. Stichtenoth, T. Wütherich, C. Schöllhorn, H. -J. Krokoszinski, and J. Graff

Counterdoping with Patterned Ion Implantation Inproceedings

IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 1280-1284, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3.

Links | BibTeX | Schlagwörter: Annealing, boron, Implants, Ion implantation, Photovoltaic cell, Photovoltaic cells, silicon, solar energy, Tunneling, Voltage measurement

2012

D. Walter, B. Lim, K. Bothe, R. Falster, V. Voronkov, and J. Schmidt

Impact of crystal growth on boron-oxygen defect formation Inproceedings

WIP (Hrsg.): Proceedings of the 27th European Photovoltaic Solar Energy Conference, 775-779, Frankfurt, Germany, (2012), ISBN: 3-936338-28-0.

Links | BibTeX | Schlagwörter: boron, Czochralski, defects, oxygen, silicon

2011

F. E. Rougieux, B. Lim, J. Schmidt, M. Forster, D. Macdonald, and A. Cuevas

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon Artikel

Journal of Applied Physics 110 (6), 063708, (2011).

Links | BibTeX | Schlagwörter: Annealing, boron, carrier density, Doping, silicon

V. V. Voronkov, R. Falster, K. Bothe, B. Lim, and J. Schmidt

Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon Artikel

Journal of Applied Physics 110 (6), 063515, (2011).

Links | BibTeX | Schlagwörter: boron, electron densities of states, free energy, illumination, silicon

B. Lim, K. Bothe, V. Voronkov, R. Falster, and J. Schmidt

Light-Induced Degradation of the Carrier Lifetime in n-Type Czochralski-Grown Silicon Doped with Boron and Phosphorus Inproceedings

WIP (Hrsg.): 26th European Photovoltaic Solar Energy Conference and Exhibition, 944-948, Hamburg, Germany, (2011), ISBN: 3-936338-27-2.

Links | BibTeX | Schlagwörter: boron, Czochralski silicon, Lifetime, Phosphorus, recombination

V. V. Voronkov, R. Falster, K. Bothe, B. Lim, and J. Schmidt

The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type Silicon Inproceedings

Gettering and Defect Engineering in Semiconductor Technology XIV, 139-146, Trans Tech Publications, (2011).

Links | BibTeX | Schlagwörter: boron, lifetime degradation, oxygen, silicon

F. E. Rougieux, D. Macdonald, A. Cuevas, B. Lim, and J. Schmidt

Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon Inproceedings

IEEE (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, 003424, Seattle, WA, USA, (2011), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: boron, Doping, Kinetic theory, Photovoltaic systems, silicon

B. Lim, V. V. Voronkov, R. Falster, K. Bothe, and J. Schmidt

Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process Artikel

Applied Physics Letters 98 (16), 162104, (2011).

Links | BibTeX | Schlagwörter: Annealing, boron, Doping, electron densities of states, silicon

V. V. Voronkov, R. Falster, A. V. Batunina, D. Macdonald, K. Bothe, and J. Schmidt

Lifetime degradation mechanism in boron-doped Czochralski silicon Artikel

Energy Procedia 3 , 46-50, (2011), ISSN: 1876-6102, (EMRS-C ‘Materials devices and economics issues for tomorrow’s photovoltaics’).

Links | BibTeX | Schlagwörter: boron, Electron lifetime, oxygen, silicon

2010

B. Lim, F. Rougieux, D. Macdonald, K. Bothe, and J. Schmidt

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon Artikel

Journal of Applied Physics 108 (10), 103722, (2010).

Links | BibTeX | Schlagwörter: boron, crystal defects, Doping, interstitial defects, silicon

29 Einträge « 1 von 2 »

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