Veröffentlichungen
2017 |
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B. Min, M. Müller, H. Wagner, G. Fischer, R. Brendel, P. P. Altermatt, and H. Neuhaus A Roadmap Toward 24 % Efficient PERC Solar Cells in Industrial Mass Production Artikel IEEE Journal of Photovoltaics 7 (6), 1541-1550, (2017), ISSN: 2156-3381. Abstract | Links | BibTeX | Schlagwörter: Conductivity, Mass production, metallization, Passivated emitter and rear cell (PERC) solar cells, Photovoltaic cells, roadmap, Semiconductor device modeling, silicon, silicon solar cells @article{Min2017c,
title = {A Roadmap Toward 24 % Efficient PERC Solar Cells in Industrial Mass Production}, author = {B Min and M Müller and H Wagner and G Fischer and R Brendel and P P Altermatt and H Neuhaus}, doi = {10.1109/JPHOTOV.2017.2749007}, issn = {2156-3381}, year = {2017}, date = {2017-11-01}, journal = {IEEE Journal of Photovoltaics}, volume = {7}, number = {6}, pages = {1541-1550}, abstract = {Many manufacturers choose the passivated emitter and rear cell (PERC) approach in order to surpass the 20% cell efficiency level in mass production. In this paper, we study the efficiency potential of the PERC approach under realistic assumptions for incremental improvements of existing technologies by device simulations. Based on the most recent published experimental results, we find that the PERC structure is able to reach about 24% cell efficiency in mass production by an ongoing sequence of incremental improvements. As a guideline for future developments, we provide a method to improve cell efficiency most effectively by monitoring the current losses at the maximum power point. By means of numerical device modeling, we identify some key technologies toward 24% efficient PERC cells and provide its technology-related target requirements.}, keywords = {Conductivity, Mass production, metallization, Passivated emitter and rear cell (PERC) solar cells, Photovoltaic cells, roadmap, Semiconductor device modeling, silicon, silicon solar cells}, pubstate = {published}, tppubtype = {article} } Many manufacturers choose the passivated emitter and rear cell (PERC) approach in order to surpass the 20% cell efficiency level in mass production. In this paper, we study the efficiency potential of the PERC approach under realistic assumptions for incremental improvements of existing technologies by device simulations. Based on the most recent published experimental results, we find that the PERC structure is able to reach about 24% cell efficiency in mass production by an ongoing sequence of incremental improvements. As a guideline for future developments, we provide a method to improve cell efficiency most effectively by monitoring the current losses at the maximum power point. By means of numerical device modeling, we identify some key technologies toward 24% efficient PERC cells and provide its technology-related target requirements.
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M. Rienäcker, M. Bossmeyer, A. Merkle, U. Römer, F. Haase, J. Krügener, R. Brendel, and R. Peibst IEEE Journal of Photovoltaics 7 (1), 11-18, (2017), ISSN: 2156-3381. Abstract | Links | BibTeX | Schlagwörter: Aluminum, Back-junction back-contact (BJBC) cells, boron, Conductivity, contact resistivity, Current density, Junctions, Photovoltaic cells, polysilicon, polysilicon on oxide (POLO) junctions, recombination, selective contacts, selectivity @article{Rienäcker2017b,
title = {Junction resistivity of carrier-selective polysilicon on oxide junctions and its impact on solar cell performance}, author = {M Rienäcker and M Bossmeyer and A Merkle and U Römer and F Haase and J Krügener and R Brendel and R Peibst}, doi = {10.1109/JPHOTOV.2016.2614123}, issn = {2156-3381}, year = {2017}, date = {2017-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {7}, number = {1}, pages = {11-18}, abstract = {We investigate the junction resistivity of high-quality carrier-selective polysilicon on oxide (POLO) junctions with the transfer length method. We demonstrate n+ POLO junctions with a saturation current density JC,poly of 6.2 fA/cm2 and a junction resistivity ρc of 0.6 mΩcm2, counterdoped n+ POLO junctions with 2.7 fA/cm2 and 1.3 mΩcm2, and p+ POLO junctions with 6.7 fA/cm2 and 0.2 mΩcm2. Such low junction resistivities and saturation current densities correspond to excellent selectivities S10 of up to 16.2. The efficiency potential for back-junction back-contact solar cells with these POLO junctions was determined to be larger than 25 % by numerical device simulations. We demonstrate experimentally a back-junction back-contact solar cell with p-type and n-type POLO junctions with an independently confirmed efficiency of 24.25 %.}, keywords = {Aluminum, Back-junction back-contact (BJBC) cells, boron, Conductivity, contact resistivity, Current density, Junctions, Photovoltaic cells, polysilicon, polysilicon on oxide (POLO) junctions, recombination, selective contacts, selectivity}, pubstate = {published}, tppubtype = {article} } We investigate the junction resistivity of high-quality carrier-selective polysilicon on oxide (POLO) junctions with the transfer length method. We demonstrate n+ POLO junctions with a saturation current density JC,poly of 6.2 fA/cm2 and a junction resistivity ρc of 0.6 mΩcm2, counterdoped n+ POLO junctions with 2.7 fA/cm2 and 1.3 mΩcm2, and p+ POLO junctions with 6.7 fA/cm2 and 0.2 mΩcm2. Such low junction resistivities and saturation current densities correspond to excellent selectivities S10 of up to 16.2. The efficiency potential for back-junction back-contact solar cells with these POLO junctions was determined to be larger than 25 % by numerical device simulations. We demonstrate experimentally a back-junction back-contact solar cell with p-type and n-type POLO junctions with an independently confirmed efficiency of 24.25 %.
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2016 |
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J. Krügener, D. Tetzlaff, Y. Larionova, Y. Barnscheidt, S. Reiter, M. Turcu, R. Peibst, J. -D. Kähler, and T. Wietler Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells Inproceedings IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6. Abstract | Links | BibTeX | Schlagwörter: Annealing, boron, Conductivity, Junctions, Resistance, silicon, Temperature measurement @inproceedings{Krügener2016,
title = {Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells}, author = {J Krügener and D Tetzlaff and Y Larionova and Y Barnscheidt and S Reiter and M Turcu and R Peibst and J -D Kähler and T Wietler}, editor = {IEEE}, doi = {10.1109/IIT.2016.7882868}, isbn = {978-1-5090-2025-6}, year = {2016}, date = {2016-09-23}, booktitle = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)}, journal = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)}, address = {Tainan, Taiwan}, abstract = {Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical investigations of in situ boron-doped (deposited by low pressure chemical vapor deposition) and ion-implanted (intrinsically deposited and subsequently ion-implanted with boron) p+-poly-Si/SiOx/c-Si stacks after annealing. We find electrical deactivation of boron after annealing which strongly depends on the total boron concentration and the subsequent annealing temperature.}, keywords = {Annealing, boron, Conductivity, Junctions, Resistance, silicon, Temperature measurement}, pubstate = {published}, tppubtype = {inproceedings} } Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical investigations of in situ boron-doped (deposited by low pressure chemical vapor deposition) and ion-implanted (intrinsically deposited and subsequently ion-implanted with boron) p+-poly-Si/SiOx/c-Si stacks after annealing. We find electrical deactivation of boron after annealing which strongly depends on the total boron concentration and the subsequent annealing temperature.
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F. Kiefer, J. Krügener, F. Heinemeyer, H. J. Osten, R. Brendel, and R. Peibst IEEE Journal of Photovoltaics 6 (5), 1175-1182, (2016). Abstract | Links | BibTeX | Schlagwörter: Ag/Al paste, boron emitters, Conductivity, Current density, Doping, metallization, Metals, Photovoltaic cells, screen-print contact, silicon, Surface treatment @article{Kiefer2016,
title = {Structural investigation of printed Ag/Al contacts on silicon and numerical modeling of their contact recombination}, author = {F Kiefer and J Krügener and F Heinemeyer and H J Osten and R Brendel and R Peibst}, doi = {10.1109/JPHOTOV.2016.2591318}, year = {2016}, date = {2016-08-01}, journal = {IEEE Journal of Photovoltaics}, volume = {6}, number = {5}, pages = {1175-1182}, abstract = {Ag/Al pastes allow for a sufficiently low contact resistivity of less than 5 mΩ cm2 with boron-doped p+ emitters. A drawback of those pastes is an enlarged recombination at the silicon/metal interface below those contacts, compared with Ag pastes. For previous Ag/Al pastes from 2013, the observed recombination is even higher than theoretically expected for a fully metal-covered surface. Newly developed Ag/Al pastes allow for a significant reduction of the recombination below the contact, compared with a 2013 Ag/Al paste; for example, the J0e,m et of an 92Ω/sq. p+ emitter has decreased from 3420 down to 1014 fA/cm2 due to the newly developed paste. For an Rsheet of 137 Ω/sq, the J0e,met is 1399 fA/cm2. Structural investigations of those contacts reveal the microscopic appearance of the contacted region. There are contact spikes of metal grown into the silicon. Those spikes cover 1-1.2% of the entire printed finger area. With values for area fraction and depth of the spikes, we conduct simulations of J0e,m et. With these simulations, we are able to explain the enlarged recombination at the contact interface and describe the experimentally measured J0e,m et for both Ag/Al pastes described in this paper.}, keywords = {Ag/Al paste, boron emitters, Conductivity, Current density, Doping, metallization, Metals, Photovoltaic cells, screen-print contact, silicon, Surface treatment}, pubstate = {published}, tppubtype = {article} } Ag/Al pastes allow for a sufficiently low contact resistivity of less than 5 mΩ cm2 with boron-doped p+ emitters. A drawback of those pastes is an enlarged recombination at the silicon/metal interface below those contacts, compared with Ag pastes. For previous Ag/Al pastes from 2013, the observed recombination is even higher than theoretically expected for a fully metal-covered surface. Newly developed Ag/Al pastes allow for a significant reduction of the recombination below the contact, compared with a 2013 Ag/Al paste; for example, the J0e,m et of an 92Ω/sq. p+ emitter has decreased from 3420 down to 1014 fA/cm2 due to the newly developed paste. For an Rsheet of 137 Ω/sq, the J0e,met is 1399 fA/cm2. Structural investigations of those contacts reveal the microscopic appearance of the contacted region. There are contact spikes of metal grown into the silicon. Those spikes cover 1-1.2% of the entire printed finger area. With values for area fraction and depth of the spikes, we conduct simulations of J0e,m et. With these simulations, we are able to explain the enlarged recombination at the contact interface and describe the experimentally measured J0e,m et for both Ag/Al pastes described in this paper.
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R. Witteck, D. Hinken, M. R. Vogt, J. Müller, S. Blankemeyer, H. Schulte-Huxel, M. Köntges, K. Bothe, and R. Brendel Optimized interconnection of passivated emitter and rear cells by experimentally verified modeling Artikel IEEE Journal of Photovoltaics 6 (2), 432-439, (2016). Abstract | Links | BibTeX | Schlagwörter: cell interconnection, Conductivity, Optical device fabrication, Optical variables measurement, passivated emitter and rear cells (PERC), Photovoltaic cells, Resistance, Silicon solar cell, solar module, Thyristors, Wires @article{Witteck2016b,
title = {Optimized interconnection of passivated emitter and rear cells by experimentally verified modeling}, author = {R Witteck and D Hinken and M R Vogt and J Müller and S Blankemeyer and H Schulte-Huxel and M Köntges and K Bothe and R Brendel}, doi = {10.1109/JPHOTOV.2016.2514706}, year = {2016}, date = {2016-03-01}, journal = {IEEE Journal of Photovoltaics}, volume = {6}, number = {2}, pages = {432-439}, abstract = {Recent reports about new cell efficiency records are highlighting the continuing development of passivated emitter and rear cells (PERC). Additionally, volume production has started, forming the basis for cutting edge solar modules. However, transferring the high efficiency of the cells into a module requires an adaptation of the conventional front metallization and of the cell interconnection design. This paper studies and compares the module output of various cell interconnection technologies, including conventional cell interconnection ribbons and wires. We fabricate solar cells and characterize their electrical and optical properties. From the cells, we build experimental modules with various cell interconnection technologies. We determine the optical and electrical characteristics of the experimental modules. Based on our experimental results, we develop an analytical model that reproduces the power output of the experimental modules within the measurement uncertainty. The analytical model is then applied to simulate various cell interconnection technologies employing halved cells, optical enhanced cell interconnectors, and multiwires. We also consider the effect of enhancing the cell-to-cell spacing. Based on the experimentally verified simulations, we propose an optimized cell interconnection for a 60-PERC module that achieves a power output of 323 W. Our simulations reveal that wires combined with halved cells show the best module performance. However, applying light-harvesting structures to the cell interconnection ribbons is an attractive alternative for upgrading existing production lines.}, keywords = {cell interconnection, Conductivity, Optical device fabrication, Optical variables measurement, passivated emitter and rear cells (PERC), Photovoltaic cells, Resistance, Silicon solar cell, solar module, Thyristors, Wires}, pubstate = {published}, tppubtype = {article} } Recent reports about new cell efficiency records are highlighting the continuing development of passivated emitter and rear cells (PERC). Additionally, volume production has started, forming the basis for cutting edge solar modules. However, transferring the high efficiency of the cells into a module requires an adaptation of the conventional front metallization and of the cell interconnection design. This paper studies and compares the module output of various cell interconnection technologies, including conventional cell interconnection ribbons and wires. We fabricate solar cells and characterize their electrical and optical properties. From the cells, we build experimental modules with various cell interconnection technologies. We determine the optical and electrical characteristics of the experimental modules. Based on our experimental results, we develop an analytical model that reproduces the power output of the experimental modules within the measurement uncertainty. The analytical model is then applied to simulate various cell interconnection technologies employing halved cells, optical enhanced cell interconnectors, and multiwires. We also consider the effect of enhancing the cell-to-cell spacing. Based on the experimentally verified simulations, we propose an optimized cell interconnection for a 60-PERC module that achieves a power output of 323 W. Our simulations reveal that wires combined with halved cells show the best module performance. However, applying light-harvesting structures to the cell interconnection ribbons is an attractive alternative for upgrading existing production lines.
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N. Wehmeier, B. Lim, A. Merkle, A. Tempez, S. Legendre, H. Wagner, A. Nowack, T. Dullweber, and P. P. Altermatt PECVD BSG diffusion sources for simplified high-efficiency n-PERT BJ and BJBC solar cells Artikel IEEE Journal of Photovoltaics 6 (1), 119-125, (2016). Abstract | Links | BibTeX | Schlagwörter: Back-junction back-contact (BJBC) cell, boron, boron diffusion source, codiffusion, Conductivity, Fabrication, Furnaces, n-PERT solar cell, Photovoltaic cells, Plasma measurements, plasma-enhanced chemical vapor deposition (PECVD) boron silicate glass (BSG), silicon, simulation model @article{Wehmeier2016c,
title = {PECVD BSG diffusion sources for simplified high-efficiency n-PERT BJ and BJBC solar cells}, author = {N Wehmeier and B Lim and A Merkle and A Tempez and S Legendre and H Wagner and A Nowack and T Dullweber and P P Altermatt}, doi = {10.1109/JPHOTOV.2015.2493364}, year = {2016}, date = {2016-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {6}, number = {1}, pages = {119-125}, abstract = {We investigate boron silicate glasses (BSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) as a boron diffusion source on n-type wafers for the simplified fabrication of crystalline Si solar cells by the codiffusion processes. By varying the SiH4/B2 H6 gas flow ratio and the layer thickness of the PECVD BSG layers, we obtain sheet resistivities in a wide range from 30 to 500 Ω/□ after thermal B drive-in. Emitter saturation current densities as low as J0e = 4 fA/cm2 (for Rsheet = 236 Ω/□) are demonstrated using PECVD BSG layers as diffusion sources. A boron concentration in the PECVD BSG of up to 6.4 × 1021 cm-3 is measured by plasma profiling time-of-flight mass spectrometry (PP-TOFMS). A process simulation model of the B diffusion from the PECVD BSG into the Si substrate reproduces the experimental B concentration profile in the Si, measured both by PP-TOFMS and electrochemical capacitance- voltage (ECV) measurements. We fabricate industrial-type passivated emitter and rear totally diffused back-junction (PERT BJ) solar cells, as well as back-junction back-contact cells on n-type wafers. Applying codiffusion from PECVD BSG layers and thus a lean process flow including only one high-temperature step, we demonstrate n-PERT BJ cells with conversion efficiencies of up to 19.85%.}, keywords = {Back-junction back-contact (BJBC) cell, boron, boron diffusion source, codiffusion, Conductivity, Fabrication, Furnaces, n-PERT solar cell, Photovoltaic cells, Plasma measurements, plasma-enhanced chemical vapor deposition (PECVD) boron silicate glass (BSG), silicon, simulation model}, pubstate = {published}, tppubtype = {article} } We investigate boron silicate glasses (BSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) as a boron diffusion source on n-type wafers for the simplified fabrication of crystalline Si solar cells by the codiffusion processes. By varying the SiH4/B2 H6 gas flow ratio and the layer thickness of the PECVD BSG layers, we obtain sheet resistivities in a wide range from 30 to 500 Ω/□ after thermal B drive-in. Emitter saturation current densities as low as J0e = 4 fA/cm2 (for Rsheet = 236 Ω/□) are demonstrated using PECVD BSG layers as diffusion sources. A boron concentration in the PECVD BSG of up to 6.4 × 1021 cm-3 is measured by plasma profiling time-of-flight mass spectrometry (PP-TOFMS). A process simulation model of the B diffusion from the PECVD BSG into the Si substrate reproduces the experimental B concentration profile in the Si, measured both by PP-TOFMS and electrochemical capacitance- voltage (ECV) measurements. We fabricate industrial-type passivated emitter and rear totally diffused back-junction (PERT BJ) solar cells, as well as back-junction back-contact cells on n-type wafers. Applying codiffusion from PECVD BSG layers and thus a lean process flow including only one high-temperature step, we demonstrate n-PERT BJ cells with conversion efficiencies of up to 19.85%.
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2015 |
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H. Mäckel, and P. P. Altermatt IEEE Journal of Photovoltaics 5 (4), 1034-1046, (2015), ISSN: 2156-3381. Links | BibTeX | Schlagwörter: Conductivity, Contact resistance, Electrical resistance measurement, Glass, Lead, silicon, Silicon solar cell, Silver, solar cell metallization, Tunneling @article{Mäckel2015,
title = {Current Transport Through Lead-Borosilicate Interfacial Glass Layers at the Screen-Printed Silver-Silicon Front Contact}, author = {H Mäckel and P P Altermatt}, doi = {10.1109/JPHOTOV.2015.2409561}, issn = {2156-3381}, year = {2015}, date = {2015-07-01}, journal = {IEEE Journal of Photovoltaics}, volume = {5}, number = {4}, pages = {1034-1046}, keywords = {Conductivity, Contact resistance, Electrical resistance measurement, Glass, Lead, silicon, Silicon solar cell, Silver, solar cell metallization, Tunneling}, pubstate = {published}, tppubtype = {article} } |
2014 |
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R. Gogolin, M. Turcu, R. Ferré, J. Clemens, N. -P. Harder, R. Brendel, and J. Schmidt Analysis of series resistance losses in a-Si:H/c-Si heterojunction solar cells Artikel IEEE Journal of Photovoltaics 4 (5), 1169-1176, (2014). Links | BibTeX | Schlagwörter: Amorphous silicon, Conductivity, Contact resistance, heterojunctions, Hydrogen, Indium tin oxide, Photovoltaic cells, Resistance, Series Resistance, Silicon heterojunction solar cells @article{Gogolin2014,
title = {Analysis of series resistance losses in a-Si:H/c-Si heterojunction solar cells}, author = {R Gogolin and M Turcu and R Ferré and J Clemens and N -P Harder and R Brendel and J Schmidt}, doi = {10.1109/JPHOTOV.2014.2328575}, year = {2014}, date = {2014-09-01}, journal = {IEEE Journal of Photovoltaics}, volume = {4}, number = {5}, pages = {1169-1176}, keywords = {Amorphous silicon, Conductivity, Contact resistance, heterojunctions, Hydrogen, Indium tin oxide, Photovoltaic cells, Resistance, Series Resistance, Silicon heterojunction solar cells}, pubstate = {published}, tppubtype = {article} } |
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S. Eidelloth, and R. Brendel IEEE Electron Device Letters 35 (1), 9-11, (2014). Links | BibTeX | Schlagwörter: Conductivity, Conformal mapping, Contact resistance, Finite element analysis, Geometry, Mathematical model, Photovoltaic cells, Resistance, silicon @article{Eidelloth2014,
title = {Analytical theory for extracting specific contact resistances of thick samples from the transmission line method}, author = {S Eidelloth and R Brendel}, doi = {10.1109/LED.2013.2290602}, year = {2014}, date = {2014-01-01}, journal = {IEEE Electron Device Letters}, volume = {35}, number = {1}, pages = {9-11}, keywords = {Conductivity, Conformal mapping, Contact resistance, Finite element analysis, Geometry, Mathematical model, Photovoltaic cells, Resistance, silicon}, pubstate = {published}, tppubtype = {article} } |
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M. Müller, P. P. Altermatt, H. Wagner, and G. Fischer IEEE Journal of Photovoltaics 4 (1), 107-113, (2014), ISSN: 2156-3381. Links | BibTeX | Schlagwörter: 3-D device simulation, Analytical models, Computational modeling, Conductivity, Crystalline Si solar cells, Indexes, Metals, Metamodeling, passivated emitter and rear cell (PERC), Photovoltaic cells, sensitivity analysis @article{Müller2014b,
title = {Sensitivity Analysis of Industrial Multicrystalline PERC Silicon Solar Cells by Means of 3-D Device Simulation and Metamodeling}, author = {M Müller and P P Altermatt and H Wagner and G Fischer}, doi = {10.1109/JPHOTOV.2013.2287753}, issn = {2156-3381}, year = {2014}, date = {2014-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {4}, number = {1}, pages = {107-113}, keywords = {3-D device simulation, Analytical models, Computational modeling, Conductivity, Crystalline Si solar cells, Indexes, Metals, Metamodeling, passivated emitter and rear cell (PERC), Photovoltaic cells, sensitivity analysis}, pubstate = {published}, tppubtype = {article} } |
2013 |
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T. Dullweber, C. Kranz, U. Baumann, R. Hesse, D. Walter, J. Schmidt, P. Altermatt, and R. Brendel Silicon wafer material options for highly efficient p-type PERC solar cells Inproceedings IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 3074-3078, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3. Links | BibTeX | Schlagwörter: charge carrier lifetime, Conductivity, Degradation, light-induced degradation, PERC, Photovoltaic cells, Semiconductor device modeling, silicon, silicon solar cells @inproceedings{Dullweber2013,
title = {Silicon wafer material options for highly efficient p-type PERC solar cells}, author = {T Dullweber and C Kranz and U Baumann and R Hesse and D Walter and J Schmidt and P Altermatt and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2013.6745110}, isbn = {978-1-4799-3299-3}, year = {2013}, date = {2013-06-16}, booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) }, journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference}, pages = {3074-3078}, address = {Tampa, FL, USA}, keywords = {charge carrier lifetime, Conductivity, Degradation, light-induced degradation, PERC, Photovoltaic cells, Semiconductor device modeling, silicon, silicon solar cells}, pubstate = {published}, tppubtype = {inproceedings} } |
2012 |
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J. H. Petermann, T. Ohrdes, P. P. Altermatt, S. Eidelloth, and R. Brendel IEEE Transactions on Electron Devices 59 (4), 909-917, (2012). Links | BibTeX | Schlagwörter: Conductivity, kerfless, layer transfer, loss analysis, metallization, Photovoltaic cells, porous silicon (PSI), Resistance, silicon, Solid modeling, Surface treatment @article{Petermann2012,
title = {19% efficient thin-film crystalline silicon solar cells from layer transfer using porous silicon: a loss analysis by means of three-dimensional simulations}, author = {J H Petermann and T Ohrdes and P P Altermatt and S Eidelloth and R Brendel}, doi = { 10.1109/TED.2012.2183001}, year = {2012}, date = {2012-04-01}, journal = {IEEE Transactions on Electron Devices}, volume = {59}, number = {4}, pages = {909-917}, keywords = {Conductivity, kerfless, layer transfer, loss analysis, metallization, Photovoltaic cells, porous silicon (PSI), Resistance, silicon, Solid modeling, Surface treatment}, pubstate = {published}, tppubtype = {article} } |
2011 |
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J. Muller, K. Bothe, S. Gatz, H. Plagwitz, G. Schubert, and R. Brendel IEEE Transactions on Electron Devices 58 (10), 3239-3245, (2011), ISSN: 0018-9383. Links | BibTeX | Schlagwörter: Carrier lifetime, Conductivity, Geometry, Laser ablation, local back surface field (LBSF), metallization, Scanning electron microscopy, silicon, silicon solar cells, Spontaneous emission @article{Muller2011,
title = {Contact Formation and Recombination at Screen-Printed Local Aluminum-Alloyed Silicon Solar Cell Base Contacts}, author = {J Muller and K Bothe and S Gatz and H Plagwitz and G Schubert and R Brendel}, doi = {10.1109/TED.2011.2161089}, issn = {0018-9383}, year = {2011}, date = {2011-10-01}, journal = {IEEE Transactions on Electron Devices}, volume = {58}, number = {10}, pages = {3239-3245}, keywords = {Carrier lifetime, Conductivity, Geometry, Laser ablation, local back surface field (LBSF), metallization, Scanning electron microscopy, silicon, silicon solar cells, Spontaneous emission}, pubstate = {published}, tppubtype = {article} } |
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S. Gatz, T. Dullweber, and R. Brendel Evaluation of Series Resistance Losses in Screen-Printed Solar Cells With Local Rear Contacts Artikel IEEE Journal of Photovoltaics 1 (1), 37-42, (2011), ISSN: 2156-3381. Links | BibTeX | Schlagwörter: Conductivity, Electrical resistance measurement, metallization, passivation, Photovoltaic cells, photovoltaics, Resistance, silicon, Solar Cells @article{Gatz2011,
title = {Evaluation of Series Resistance Losses in Screen-Printed Solar Cells With Local Rear Contacts}, author = {S Gatz and T Dullweber and R Brendel}, doi = {10.1109/JPHOTOV.2011.2163925}, issn = {2156-3381}, year = {2011}, date = {2011-07-01}, journal = {IEEE Journal of Photovoltaics}, volume = {1}, number = {1}, pages = {37-42}, keywords = {Conductivity, Electrical resistance measurement, metallization, passivation, Photovoltaic cells, photovoltaics, Resistance, silicon, Solar Cells}, pubstate = {published}, tppubtype = {article} } |
2009 |
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E. G. Rojas, C. Hampe, H. Plagwitz, and R. Brendel Formation of mesoporous gallium arsenide for lift-off processes by electrochemical etching Inproceedings IEEE (Hrsg.): 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 001086-001089, Philadelphia, PA, USA, (2009), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: Conductive films, Conductivity, Epitaxial growth, Etching, Gallium arsenide, Glass, Mesoporous materials, Molecular beam epitaxial growth, Substrates, X-ray scattering @inproceedings{Rojas2009b,
title = {Formation of mesoporous gallium arsenide for lift-off processes by electrochemical etching}, author = {E G Rojas and C Hampe and H Plagwitz and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2009.5411208}, issn = {0160-8371}, year = {2009}, date = {2009-06-01}, booktitle = {2009 34th IEEE Photovoltaic Specialists Conference (PVSC)}, pages = {001086-001089}, address = {Philadelphia, PA, USA}, keywords = {Conductive films, Conductivity, Epitaxial growth, Etching, Gallium arsenide, Glass, Mesoporous materials, Molecular beam epitaxial growth, Substrates, X-ray scattering}, pubstate = {published}, tppubtype = {inproceedings} } |
2008 |
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B. Hoex, J. Schmidt, M. C. M. van de Sanden, and W. M. M. Kessels Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3 Inproceedings IEEE (Hrsg.): 2008 33rd IEEE Photovoltaic Specialists Conference, 1-4, San Diego, CA, USA, (2008), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: atomic layer deposition, Conductivity, Crystallization, Doping, passivation, Photovoltaic cells, Plasma temperature, silicon, Substrates, Velocity measurement @inproceedings{Hoex2008b,
title = {Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3}, author = {B Hoex and J Schmidt and M C M van de Sanden and W M M Kessels}, editor = {IEEE}, doi = {10.1109/PVSC.2008.4922635}, issn = {0160-8371}, year = {2008}, date = {2008-05-01}, booktitle = {2008 33rd IEEE Photovoltaic Specialists Conference}, pages = {1-4}, address = {San Diego, CA, USA}, keywords = {atomic layer deposition, Conductivity, Crystallization, Doping, passivation, Photovoltaic cells, Plasma temperature, silicon, Substrates, Velocity measurement}, pubstate = {published}, tppubtype = {inproceedings} } |