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30 Einträge « 1 von 2 »

2020

E. L. Warren, W. E. McMahon, M. Rienäcker, K. T. VanSant, R. C. Whitehead, R. Peibst, and A. C. Tamboli

A Taxonomy for Three-Terminal Tandem Solar Cells Artikel

ACS Energy Letters 5 (4), 1233-1242, (2020).

Abstract | Links | BibTeX | Schlagwörter: Doping, Electrochemical cells, Power, Solar Cells, solar energy

2016

J. Krügener, F. Kiefer, Y. Larionova, M. Rienäcker, F. Haase, R. Peibst, and H. J. Osten

Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells Inproceedings

IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6.

Abstract | Links | BibTeX | Schlagwörter: boron, Doping, Ion implantation, Photovoltaic cells, Photovoltaic systems, silicon

F. Kiefer, J. Krügener, F. Heinemeyer, H. J. Osten, R. Brendel, and R. Peibst

Structural investigation of printed Ag/Al contacts on silicon and numerical modeling of their contact recombination Artikel

IEEE Journal of Photovoltaics 6 (5), 1175-1182, (2016).

Abstract | Links | BibTeX | Schlagwörter: Ag/Al paste, boron emitters, Conductivity, Current density, Doping, metallization, Metals, Photovoltaic cells, screen-print contact, silicon, Surface treatment

H. Wagner, A. Dastgheib-Shirazi, B. Min, A. E. Morishige, M. Steyer, G. Hahn, C. del Cañizo, T. Buonassisi, and P. P. Altermatt

Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation Artikel

Journal of Applied Physics 119 , 185704, (2016).

Abstract | Links | BibTeX | Schlagwörter: diffusion, Doping, secondary ion mass spectroscopy, Solar Cells, solubility

2015

U. Römer, R. Peibst, T. Ohrdes, B. Lim, J. Krügener, T. Wietler, and R. Brendel

Ion implantation for poly-Si passivated back-junction back-contacted solar cells Artikel

IEEE Journal of Photovoltaics 5 (2), 507-514, (2015).

Links | BibTeX | Schlagwörter: Back contact solar cells, boron, Carrier Selective Contacts, Doping, Implants, Ion implantation, Junctions, Photovoltaic cells, silicon, solar energy

J. Krügener, R. Peibst, F. A. Wolf, E. Bugiel, T. Ohrdes, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, and H. J. Osten

Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters Artikel

IEEE Journal of Photovoltaics 5 (1), 166-173, (2015).

Links | BibTeX | Schlagwörter: Annealing, boron, crystal defects, Density measurement, Doping, Ion implantation, photovoltaic, rapid thermal annealing (RTA), silicon, Surface texture, Temperature measurement

2014

R. Peibst, U. Römer, K. R. Hofmann, B. Lim, T. F. Wietler, J. Krügener, N. -P. Harder, and R. Brendel

A simple model describing the symmetric IV characteristics of p polycrystalline Si/n monocrystalline Si and n polycrystalline Si/p monocrystalline Si junctions Artikel

IEEE Journal of Photovoltaics 4 (3), 841-850, (2014).

Links | BibTeX | Schlagwörter: Bipolar transistors (BJTs), charge carriers, Doping, Junctions, Photovoltaic cells, Resistance, Semiconductor process modeling, silicon, Tunneling

H. Wagner, T. Ohrdes, A. Dastgheib-Shirazi, B. Puthen-Veettil, D. König, and P. P. Altermatt

A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells Artikel

Journal of Applied Physics 115 (4), 044508, (2014).

Links | BibTeX | Schlagwörter: carrier density, Doping, gallium, III-V semiconductors, Solar Cells

2013

H. Wagner, T. Ohrdes, A. Dastgheib-Shirazi, B. Puthen-Veettil, D. König, and P. P. Altermatt

Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter Inproceedings

IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 0896-0899, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3.

Links | BibTeX | Schlagwörter: device simulation, Doping, gallium phosphide, phosphorus emitter, Photonic band gap, Photovoltaic cells, Radiative recombination, Semiconductor process modeling, silicon, Solids

2012

F. Haase, R. Winter, S. Kajari-Schröder, M. Nese, and R. Brendel

High-efficiency back-contact back-junction silicon solar cells with cell thicknesses of 45 µm, 90 µm, 130 µm and 290 µm Inproceedings

WIP (Hrsg.): Proceedings of the 27th European Photovoltaic Solar Energy Conference, 580-585, Frankfurt, Germany, (2012), ISBN: 3-936338-28-0.

Links | BibTeX | Schlagwörter: Doping, High Efficiency, Lifetime, Porous Silicon, Thickness

J. D. Murphy, K. Bothe, R. Krain, V. V. Voronkov, and R. J. Falster

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon, Artikel

Journal of Applied Physics 111 (11), 113709, (2012).

Links | BibTeX | Schlagwörter: Doping, electron capture, electrons, silicon, Temperature measurement

J. Müller, K. Bothe, S. Gatz, and R. Brendel

Modeling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum Artikel

physica status solidi (RRL) – Rapid Research Letters 6 (3), 111-113, (2012).

Links | BibTeX | Schlagwörter: Annealing, Doping, metal−semiconductor contacts, silicon, Solar Cells

M. Kessler, T. Ohrdes, P. P. Altermatt, and R. Brendel

The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in silicon Artikel

Journal of Applied Physics 111 (5), 054508, (2012).

Links | BibTeX | Schlagwörter: carrier lifetimes, diffusion, Doping, silicon, space charge effects

2011

F. E. Rougieux, B. Lim, J. Schmidt, M. Forster, D. Macdonald, and A. Cuevas

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon Artikel

Journal of Applied Physics 110 (6), 063708, (2011).

Links | BibTeX | Schlagwörter: Annealing, boron, carrier density, Doping, silicon

F. E. Rougieux, M. Forster, D. Macdonald, A. Cuevas, B. Lim, and J. Schmidt

Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated N-Type Silicon Artikel

IEEE Journal of Photovoltaics 1 (1), 54-58, (2011), ISSN: 2156-3381.

Links | BibTeX | Schlagwörter: Compensated, Degradation, Doping, light-induced degradation, Lighting, Mathematical model, n-Type, Photovoltaic cells, silicon

F. E. Rougieux, D. Macdonald, A. Cuevas, B. Lim, and J. Schmidt

Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon Inproceedings

IEEE (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, 003424, Seattle, WA, USA, (2011), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: boron, Doping, Kinetic theory, Photovoltaic systems, silicon

O. Breitenstein, J. Bauer, K. Bothe, W. Kwapil, D. Lausch, U. Rau, J. Schmidt, M. Schneemann, M. C. Schubert, J. -M. Wagner, and W. Warta

Understanding junction breakdown in multicrystalline solar cells Artikel

Journal of Applied Physics 109 (7), 071101, (2011).

Links | BibTeX | Schlagwörter: avalanche photodiodes, Doping, Etching, p-n junctions, Solar Cells

B. Lim, V. V. Voronkov, R. Falster, K. Bothe, and J. Schmidt

Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process Artikel

Applied Physics Letters 98 (16), 162104, (2011).

Links | BibTeX | Schlagwörter: Annealing, boron, Doping, electron densities of states, silicon

2010

B. Lim, F. Rougieux, D. Macdonald, K. Bothe, and J. Schmidt

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon Artikel

Journal of Applied Physics 108 (10), 103722, (2010).

Links | BibTeX | Schlagwörter: boron, crystal defects, Doping, interstitial defects, silicon

F. E. Rougieux, D. Macdonald, A. Cuevas, S. Ruffell, J. Schmidt, B. Lim, and A. P. Knights

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon Artikel

Journal of Applied Physics 108 (1), 013706, (2010).

Links | BibTeX | Schlagwörter: carrier mobility, Doping, electrical resistivity, hall mobility, silicon

S. Steingrube, P. P. Altermatt, D. S. Steingrube, J. Schmidt, and R. Brendel

Interpretation of recombination at c-Si/SiNx interfaces by surface damage Artikel

Journal of Applied Physics 108 (1), 014506, (2010).

Links | BibTeX | Schlagwörter: Doping, illumination, passivation, Solar Cells, surface passivation

C. Ulzhöfer, P. P. Altermatt, N. -P. Harder, and R. Brendel

Loss analysis of emitter-wrap-through silicon solar cells by means of experiment and three-dimensional device modeling Artikel

Journal of Applied Physics 107 (10), 104509, (2010).

Links | BibTeX | Schlagwörter: diffusion, Doping, electrical resistivity, Etching, Solar Cells

2009

B. Lim, A. Liu, D. Macdonald, K. Bothe, and J. Schmidt

Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon Artikel

Applied Physics Letters 95 (23), 232109, (2009).

Links | BibTeX | Schlagwörter: activation energies, boron, Doping, electron densities of states, silicon

J. Schmidt, N. Thiemann, R. Bock, and R. Brendel

Recombination lifetimes in highly aluminum-doped silicon Artikel

Journal of Applied Physics 106 (9), 093707, (2009).

Links | BibTeX | Schlagwörter: aluminium, diffusion, Doping, electric fields, silicon

W. Stockum, I. Köhler, O. Doll, M. James, E. Plummer, L. Nanson, M. Prütz, S. Wyczanowski, M. Jahn, V. Mertens, and N. -P. Harder

Direct Inkjet Printing of SiO2 Diffusion Barrier for the Formation of Local Boron Back Surface Fields Inproceedings

WIP (Hrsg.): 24th European Photovoltaic Solar Energy Conference, 1723-1726, Hamburg, Germany, (2009), ISBN: 3-936338-25-6.

Links | BibTeX | Schlagwörter: diffusion, Diffusion Barrier, Doping, Inkjet, LBSF

30 Einträge « 1 von 2 »

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