Veröffentlichungen
2020 |
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E. L. Warren, W. E. McMahon, M. Rienäcker, K. T. VanSant, R. C. Whitehead, R. Peibst, and A. C. Tamboli A Taxonomy for Three-Terminal Tandem Solar Cells Artikel ACS Energy Letters 5 (4), 1233-1242, (2020). Abstract | Links | BibTeX | Schlagwörter: Doping, Electrochemical cells, Power, Solar Cells, solar energy @article{Warren2020,
title = {A Taxonomy for Three-Terminal Tandem Solar Cells}, author = {E L Warren and W E McMahon and M Rienäcker and K T VanSant and R C Whitehead and R Peibst and A C Tamboli}, doi = {10.1021/acsenergylett.0c00068}, year = {2020}, date = {2020-04-01}, journal = {ACS Energy Letters}, volume = {5}, number = {4}, pages = {1233-1242}, abstract = {Tandem and multijunction solar cells offer the only demonstrated path to terrestrial 1-sun solar cell efficiency over 30%. Three-terminal tandem (3TT) solar cells can overcome some of the limitations of two-terminal and four-terminal tandem solar cell designs. However, the coupled nature of the cells adds a degree of complexity to the devices themselves and the ways that their performance can be measured and reported. While many different configurations of 3TT devices have been proposed, there is no standard taxonomy to discuss the device structure or loading topology. This Perspective proposes a taxonomy for 3TT solar cells to enable a common nomenclature for discussing these devices and their performance. It also provides a brief history of three-terminal devices in the literature and demonstrates that many different 3TT devices can work at efficiencies above 30% if properly designed.}, keywords = {Doping, Electrochemical cells, Power, Solar Cells, solar energy}, pubstate = {published}, tppubtype = {article} } Tandem and multijunction solar cells offer the only demonstrated path to terrestrial 1-sun solar cell efficiency over 30%. Three-terminal tandem (3TT) solar cells can overcome some of the limitations of two-terminal and four-terminal tandem solar cell designs. However, the coupled nature of the cells adds a degree of complexity to the devices themselves and the ways that their performance can be measured and reported. While many different configurations of 3TT devices have been proposed, there is no standard taxonomy to discuss the device structure or loading topology. This Perspective proposes a taxonomy for 3TT solar cells to enable a common nomenclature for discussing these devices and their performance. It also provides a brief history of three-terminal devices in the literature and demonstrates that many different 3TT devices can work at efficiencies above 30% if properly designed.
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2016 |
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J. Krügener, F. Kiefer, Y. Larionova, M. Rienäcker, F. Haase, R. Peibst, and H. J. Osten Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells Inproceedings IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6. Abstract | Links | BibTeX | Schlagwörter: boron, Doping, Ion implantation, Photovoltaic cells, Photovoltaic systems, silicon @inproceedings{Krügener2016b,
title = {Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells}, author = {J Krügener and F Kiefer and Y Larionova and M Rienäcker and F Haase and R Peibst and H J Osten}, editor = {IEEE}, doi = {10.1109/IIT.2016.7882886}, isbn = {978-1-5090-2025-6}, year = {2016}, date = {2016-09-26}, booktitle = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)}, journal = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)}, address = {Tainan, Taiwan}, abstract = {We present a brief summary about the use of ion implantation for photovoltaic applications in the past and present. Furthermore, we highlight how ion implantation might be used in the future within the fast moving field of silicon solar cells.}, keywords = {boron, Doping, Ion implantation, Photovoltaic cells, Photovoltaic systems, silicon}, pubstate = {published}, tppubtype = {inproceedings} } We present a brief summary about the use of ion implantation for photovoltaic applications in the past and present. Furthermore, we highlight how ion implantation might be used in the future within the fast moving field of silicon solar cells.
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F. Kiefer, J. Krügener, F. Heinemeyer, H. J. Osten, R. Brendel, and R. Peibst IEEE Journal of Photovoltaics 6 (5), 1175-1182, (2016). Abstract | Links | BibTeX | Schlagwörter: Ag/Al paste, boron emitters, Conductivity, Current density, Doping, metallization, Metals, Photovoltaic cells, screen-print contact, silicon, Surface treatment @article{Kiefer2016,
title = {Structural investigation of printed Ag/Al contacts on silicon and numerical modeling of their contact recombination}, author = {F Kiefer and J Krügener and F Heinemeyer and H J Osten and R Brendel and R Peibst}, doi = {10.1109/JPHOTOV.2016.2591318}, year = {2016}, date = {2016-08-01}, journal = {IEEE Journal of Photovoltaics}, volume = {6}, number = {5}, pages = {1175-1182}, abstract = {Ag/Al pastes allow for a sufficiently low contact resistivity of less than 5 mΩ cm2 with boron-doped p+ emitters. A drawback of those pastes is an enlarged recombination at the silicon/metal interface below those contacts, compared with Ag pastes. For previous Ag/Al pastes from 2013, the observed recombination is even higher than theoretically expected for a fully metal-covered surface. Newly developed Ag/Al pastes allow for a significant reduction of the recombination below the contact, compared with a 2013 Ag/Al paste; for example, the J0e,m et of an 92Ω/sq. p+ emitter has decreased from 3420 down to 1014 fA/cm2 due to the newly developed paste. For an Rsheet of 137 Ω/sq, the J0e,met is 1399 fA/cm2. Structural investigations of those contacts reveal the microscopic appearance of the contacted region. There are contact spikes of metal grown into the silicon. Those spikes cover 1-1.2% of the entire printed finger area. With values for area fraction and depth of the spikes, we conduct simulations of J0e,m et. With these simulations, we are able to explain the enlarged recombination at the contact interface and describe the experimentally measured J0e,m et for both Ag/Al pastes described in this paper.}, keywords = {Ag/Al paste, boron emitters, Conductivity, Current density, Doping, metallization, Metals, Photovoltaic cells, screen-print contact, silicon, Surface treatment}, pubstate = {published}, tppubtype = {article} } Ag/Al pastes allow for a sufficiently low contact resistivity of less than 5 mΩ cm2 with boron-doped p+ emitters. A drawback of those pastes is an enlarged recombination at the silicon/metal interface below those contacts, compared with Ag pastes. For previous Ag/Al pastes from 2013, the observed recombination is even higher than theoretically expected for a fully metal-covered surface. Newly developed Ag/Al pastes allow for a significant reduction of the recombination below the contact, compared with a 2013 Ag/Al paste; for example, the J0e,m et of an 92Ω/sq. p+ emitter has decreased from 3420 down to 1014 fA/cm2 due to the newly developed paste. For an Rsheet of 137 Ω/sq, the J0e,met is 1399 fA/cm2. Structural investigations of those contacts reveal the microscopic appearance of the contacted region. There are contact spikes of metal grown into the silicon. Those spikes cover 1-1.2% of the entire printed finger area. With values for area fraction and depth of the spikes, we conduct simulations of J0e,m et. With these simulations, we are able to explain the enlarged recombination at the contact interface and describe the experimentally measured J0e,m et for both Ag/Al pastes described in this paper.
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H. Wagner, A. Dastgheib-Shirazi, B. Min, A. E. Morishige, M. Steyer, G. Hahn, C. del Cañizo, T. Buonassisi, and P. P. Altermatt Journal of Applied Physics 119 , 185704, (2016). Abstract | Links | BibTeX | Schlagwörter: diffusion, Doping, secondary ion mass spectroscopy, Solar Cells, solubility @article{Wagner2016,
title = {Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation}, author = {H Wagner and A Dastgheib-Shirazi and B Min and A E Morishige and M Steyer and G Hahn and C del Cañizo and T Buonassisi and P P Altermatt}, doi = {10.1063/1.4949326}, year = {2016}, date = {2016-05-01}, journal = {Journal of Applied Physics}, volume = {119}, pages = {185704}, abstract = {The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density Npeak = 8.0 × 10^18 cm−3 and a junction depth dj = 0.4 μm, resulting in a sheet resistivity ρsh = 380 Ω/sq and a saturation current-density J0 below 10 fA/cm2. With these properties, the POCl3 process can compete with ion implantation or doped oxide approaches.}, keywords = {diffusion, Doping, secondary ion mass spectroscopy, Solar Cells, solubility}, pubstate = {published}, tppubtype = {article} } The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density Npeak = 8.0 × 10^18 cm−3 and a junction depth dj = 0.4 μm, resulting in a sheet resistivity ρsh = 380 Ω/sq and a saturation current-density J0 below 10 fA/cm2. With these properties, the POCl3 process can compete with ion implantation or doped oxide approaches.
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2015 |
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U. Römer, R. Peibst, T. Ohrdes, B. Lim, J. Krügener, T. Wietler, and R. Brendel Ion implantation for poly-Si passivated back-junction back-contacted solar cells Artikel IEEE Journal of Photovoltaics 5 (2), 507-514, (2015). Links | BibTeX | Schlagwörter: Back contact solar cells, boron, Carrier Selective Contacts, Doping, Implants, Ion implantation, Junctions, Photovoltaic cells, silicon, solar energy @article{Römer2015,
title = {Ion implantation for poly-Si passivated back-junction back-contacted solar cells}, author = {U Römer and R Peibst and T Ohrdes and B Lim and J Krügener and T Wietler and R Brendel}, doi = {10.1109/JPHOTOV.2014.2382975}, year = {2015}, date = {2015-03-01}, journal = {IEEE Journal of Photovoltaics}, volume = {5}, number = {2}, pages = {507-514}, keywords = {Back contact solar cells, boron, Carrier Selective Contacts, Doping, Implants, Ion implantation, Junctions, Photovoltaic cells, silicon, solar energy}, pubstate = {published}, tppubtype = {article} } |
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J. Krügener, R. Peibst, F. A. Wolf, E. Bugiel, T. Ohrdes, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, and H. J. Osten IEEE Journal of Photovoltaics 5 (1), 166-173, (2015). Links | BibTeX | Schlagwörter: Annealing, boron, crystal defects, Density measurement, Doping, Ion implantation, photovoltaic, rapid thermal annealing (RTA), silicon, Surface texture, Temperature measurement @article{Krügener2015,
title = {Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters}, author = {J Krügener and R Peibst and F A Wolf and E Bugiel and T Ohrdes and F Kiefer and C Schöllhorn and A Grohe and R Brendel and H J Osten}, doi = {10.1109/JPHOTOV.2014.2365468}, year = {2015}, date = {2015-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {5}, number = {1}, pages = {166-173}, keywords = {Annealing, boron, crystal defects, Density measurement, Doping, Ion implantation, photovoltaic, rapid thermal annealing (RTA), silicon, Surface texture, Temperature measurement}, pubstate = {published}, tppubtype = {article} } |
2014 |
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R. Peibst, U. Römer, K. R. Hofmann, B. Lim, T. F. Wietler, J. Krügener, N. -P. Harder, and R. Brendel IEEE Journal of Photovoltaics 4 (3), 841-850, (2014). Links | BibTeX | Schlagwörter: Bipolar transistors (BJTs), charge carriers, Doping, Junctions, Photovoltaic cells, Resistance, Semiconductor process modeling, silicon, Tunneling @article{Peibst2014b,
title = {A simple model describing the symmetric IV characteristics of p polycrystalline Si/n monocrystalline Si and n polycrystalline Si/p monocrystalline Si junctions}, author = {R Peibst and U Römer and K R Hofmann and B Lim and T F Wietler and J Krügener and N -P Harder and R Brendel}, doi = {10.1109/JPHOTOV.2014.2310740}, year = {2014}, date = {2014-05-01}, journal = {IEEE Journal of Photovoltaics}, volume = {4}, number = {3}, pages = {841-850}, keywords = {Bipolar transistors (BJTs), charge carriers, Doping, Junctions, Photovoltaic cells, Resistance, Semiconductor process modeling, silicon, Tunneling}, pubstate = {published}, tppubtype = {article} } |
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H. Wagner, T. Ohrdes, A. Dastgheib-Shirazi, B. Puthen-Veettil, D. König, and P. P. Altermatt Journal of Applied Physics 115 (4), 044508, (2014). Links | BibTeX | Schlagwörter: carrier density, Doping, gallium, III-V semiconductors, Solar Cells @article{Wagner2014,
title = {A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells}, author = {H Wagner and T Ohrdes and A Dastgheib-Shirazi and B Puthen-Veettil and D König and P P Altermatt}, doi = {10.1063/1.4863464}, year = {2014}, date = {2014-01-01}, journal = {Journal of Applied Physics}, volume = {115}, number = {4}, pages = {044508}, keywords = {carrier density, Doping, gallium, III-V semiconductors, Solar Cells}, pubstate = {published}, tppubtype = {article} } |
2013 |
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H. Wagner, T. Ohrdes, A. Dastgheib-Shirazi, B. Puthen-Veettil, D. König, and P. P. Altermatt Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter Inproceedings IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 0896-0899, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3. Links | BibTeX | Schlagwörter: device simulation, Doping, gallium phosphide, phosphorus emitter, Photonic band gap, Photovoltaic cells, Radiative recombination, Semiconductor process modeling, silicon, Solids @inproceedings{Wagner2013,
title = {Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter}, author = {H Wagner and T Ohrdes and A Dastgheib-Shirazi and B Puthen-Veettil and D König and P P Altermatt}, editor = {IEEE}, doi = {10.1109/PVSC.2013.6744288}, isbn = {978-1-4799-3299-3}, year = {2013}, date = {2013-06-16}, booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) }, journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference}, pages = {0896-0899}, address = {Tampa, FL, USA}, keywords = {device simulation, Doping, gallium phosphide, phosphorus emitter, Photonic band gap, Photovoltaic cells, Radiative recombination, Semiconductor process modeling, silicon, Solids}, pubstate = {published}, tppubtype = {inproceedings} } |
2012 |
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F. Haase, R. Winter, S. Kajari-Schröder, M. Nese, and R. Brendel High-efficiency back-contact back-junction silicon solar cells with cell thicknesses of 45 µm, 90 µm, 130 µm and 290 µm Inproceedings WIP (Hrsg.): Proceedings of the 27th European Photovoltaic Solar Energy Conference, 580-585, Frankfurt, Germany, (2012), ISBN: 3-936338-28-0. Links | BibTeX | Schlagwörter: Doping, High Efficiency, Lifetime, Porous Silicon, Thickness @inproceedings{Haase2012,
title = {High-efficiency back-contact back-junction silicon solar cells with cell thicknesses of 45 µm, 90 µm, 130 µm and 290 µm}, author = {F Haase and R Winter and S Kajari-Schröder and M Nese and R Brendel}, editor = {WIP}, doi = {10.4229/27thEUPVSEC2012-2AO.2.4}, isbn = {3-936338-28-0}, year = {2012}, date = {2012-09-01}, booktitle = {Proceedings of the 27th European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 27th European Photovoltaic Solar Energy Conference}, pages = {580-585}, address = {Frankfurt, Germany}, keywords = {Doping, High Efficiency, Lifetime, Porous Silicon, Thickness}, pubstate = {published}, tppubtype = {inproceedings} } |
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J. D. Murphy, K. Bothe, R. Krain, V. V. Voronkov, and R. J. Falster Journal of Applied Physics 111 (11), 113709, (2012). Links | BibTeX | Schlagwörter: Doping, electron capture, electrons, silicon, Temperature measurement @article{Murphy2012,
title = {Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon,}, author = {J D Murphy and K Bothe and R Krain and V V Voronkov and R J Falster}, doi = {10.1063/1.4725475}, year = {2012}, date = {2012-06-01}, journal = {Journal of Applied Physics}, volume = {111}, number = {11}, pages = {113709}, keywords = {Doping, electron capture, electrons, silicon, Temperature measurement}, pubstate = {published}, tppubtype = {article} } |
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J. Müller, K. Bothe, S. Gatz, and R. Brendel physica status solidi (RRL) – Rapid Research Letters 6 (3), 111-113, (2012). Links | BibTeX | Schlagwörter: Annealing, Doping, metal−semiconductor contacts, silicon, Solar Cells @article{Müller2012b,
title = {Modeling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum}, author = {J Müller and K Bothe and S Gatz and R Brendel}, doi = {10.1002/pssr.201105611}, year = {2012}, date = {2012-03-01}, journal = {physica status solidi (RRL) – Rapid Research Letters}, volume = {6}, number = {3}, pages = {111-113}, keywords = {Annealing, Doping, metal−semiconductor contacts, silicon, Solar Cells}, pubstate = {published}, tppubtype = {article} } |
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M. Kessler, T. Ohrdes, P. P. Altermatt, and R. Brendel Journal of Applied Physics 111 (5), 054508, (2012). Links | BibTeX | Schlagwörter: carrier lifetimes, diffusion, Doping, silicon, space charge effects @article{Kessler2012,
title = {The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in silicon}, author = {M Kessler and T Ohrdes and P P Altermatt and R Brendel}, doi = {10.1063/1.3691230}, year = {2012}, date = {2012-03-01}, journal = {Journal of Applied Physics}, volume = {111}, number = {5}, pages = {054508}, keywords = {carrier lifetimes, diffusion, Doping, silicon, space charge effects}, pubstate = {published}, tppubtype = {article} } |
2011 |
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F. E. Rougieux, B. Lim, J. Schmidt, M. Forster, D. Macdonald, and A. Cuevas Journal of Applied Physics 110 (6), 063708, (2011). Links | BibTeX | Schlagwörter: Annealing, boron, carrier density, Doping, silicon @article{Rougieux2011b,
title = {Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon}, author = {F E Rougieux and B Lim and J Schmidt and M Forster and D Macdonald and A Cuevas}, doi = {10.1063/1.3633492}, year = {2011}, date = {2011-09-01}, journal = {Journal of Applied Physics}, volume = {110}, number = {6}, pages = {063708}, keywords = {Annealing, boron, carrier density, Doping, silicon}, pubstate = {published}, tppubtype = {article} } |
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F. E. Rougieux, M. Forster, D. Macdonald, A. Cuevas, B. Lim, and J. Schmidt Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated N-Type Silicon Artikel IEEE Journal of Photovoltaics 1 (1), 54-58, (2011), ISSN: 2156-3381. Links | BibTeX | Schlagwörter: Compensated, Degradation, Doping, light-induced degradation, Lighting, Mathematical model, n-Type, Photovoltaic cells, silicon @article{Rougieux2011,
title = {Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated N-Type Silicon}, author = {F E Rougieux and M Forster and D Macdonald and A Cuevas and B Lim and J Schmidt}, doi = {10.1109/JPHOTOV.2011.2165698}, issn = {2156-3381}, year = {2011}, date = {2011-07-01}, journal = {IEEE Journal of Photovoltaics}, volume = {1}, number = {1}, pages = {54-58}, keywords = {Compensated, Degradation, Doping, light-induced degradation, Lighting, Mathematical model, n-Type, Photovoltaic cells, silicon}, pubstate = {published}, tppubtype = {article} } |
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F. E. Rougieux, D. Macdonald, A. Cuevas, B. Lim, and J. Schmidt Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon Inproceedings IEEE (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, 003424, Seattle, WA, USA, (2011), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: boron, Doping, Kinetic theory, Photovoltaic systems, silicon @inproceedings{Rougieux2011c,
title = {Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon}, author = {F E Rougieux and D Macdonald and A Cuevas and B Lim and J Schmidt}, editor = {IEEE}, doi = {10.1109/PVSC.2011.6186682}, issn = {0160-8371}, year = {2011}, date = {2011-06-01}, booktitle = {2011 37th IEEE Photovoltaic Specialists Conference}, pages = {003424}, address = {Seattle, WA, USA}, keywords = {boron, Doping, Kinetic theory, Photovoltaic systems, silicon}, pubstate = {published}, tppubtype = {inproceedings} } |
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O. Breitenstein, J. Bauer, K. Bothe, W. Kwapil, D. Lausch, U. Rau, J. Schmidt, M. Schneemann, M. C. Schubert, J. -M. Wagner, and W. Warta Understanding junction breakdown in multicrystalline solar cells Artikel Journal of Applied Physics 109 (7), 071101, (2011). Links | BibTeX | Schlagwörter: avalanche photodiodes, Doping, Etching, p-n junctions, Solar Cells @article{Breitenstein2011b,
title = {Understanding junction breakdown in multicrystalline solar cells}, author = {O Breitenstein and J Bauer and K Bothe and W Kwapil and D Lausch and U Rau and J Schmidt and M Schneemann and M C Schubert and J -M Wagner and W Warta}, doi = {10.1063/1.3562200}, year = {2011}, date = {2011-04-01}, journal = {Journal of Applied Physics}, volume = {109}, number = {7}, pages = {071101}, keywords = {avalanche photodiodes, Doping, Etching, p-n junctions, Solar Cells}, pubstate = {published}, tppubtype = {article} } |
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B. Lim, V. V. Voronkov, R. Falster, K. Bothe, and J. Schmidt Applied Physics Letters 98 (16), 162104, (2011). Links | BibTeX | Schlagwörter: Annealing, boron, Doping, electron densities of states, silicon @article{Lim2011b,
title = {Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process}, author = {B Lim and V V Voronkov and R Falster and K Bothe and J Schmidt}, doi = {10.1063/1.3581215}, year = {2011}, date = {2011-04-01}, journal = {Applied Physics Letters}, volume = {98}, number = {16}, pages = {162104}, keywords = {Annealing, boron, Doping, electron densities of states, silicon}, pubstate = {published}, tppubtype = {article} } |
2010 |
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B. Lim, F. Rougieux, D. Macdonald, K. Bothe, and J. Schmidt Journal of Applied Physics 108 (10), 103722, (2010). Links | BibTeX | Schlagwörter: boron, crystal defects, Doping, interstitial defects, silicon @article{Lim2010b,
title = {Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon}, author = {B Lim and F Rougieux and D Macdonald and K Bothe and J Schmidt}, doi = {10.1063/1.3511741}, year = {2010}, date = {2010-11-01}, journal = {Journal of Applied Physics}, volume = {108}, number = {10}, pages = {103722}, keywords = {boron, crystal defects, Doping, interstitial defects, silicon}, pubstate = {published}, tppubtype = {article} } |
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F. E. Rougieux, D. Macdonald, A. Cuevas, S. Ruffell, J. Schmidt, B. Lim, and A. P. Knights Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon Artikel Journal of Applied Physics 108 (1), 013706, (2010). Links | BibTeX | Schlagwörter: carrier mobility, Doping, electrical resistivity, hall mobility, silicon @article{Rougieux2010,
title = {Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon}, author = {F E Rougieux and D Macdonald and A Cuevas and S Ruffell and J Schmidt and B Lim and A P Knights}, doi = {10.1063/1.3456076}, year = {2010}, date = {2010-07-01}, journal = {Journal of Applied Physics}, volume = {108}, number = {1}, pages = {013706}, keywords = {carrier mobility, Doping, electrical resistivity, hall mobility, silicon}, pubstate = {published}, tppubtype = {article} } |
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S. Steingrube, P. P. Altermatt, D. S. Steingrube, J. Schmidt, and R. Brendel Interpretation of recombination at c-Si/SiNx interfaces by surface damage Artikel Journal of Applied Physics 108 (1), 014506, (2010). Links | BibTeX | Schlagwörter: Doping, illumination, passivation, Solar Cells, surface passivation @article{Steingrube2010b,
title = {Interpretation of recombination at c-Si/SiNx interfaces by surface damage}, author = {S Steingrube and P P Altermatt and D S Steingrube and J Schmidt and R Brendel}, doi = {10.1063/1.3437643}, year = {2010}, date = {2010-07-01}, journal = {Journal of Applied Physics}, volume = {108}, number = {1}, pages = {014506}, keywords = {Doping, illumination, passivation, Solar Cells, surface passivation}, pubstate = {published}, tppubtype = {article} } |
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C. Ulzhöfer, P. P. Altermatt, N. -P. Harder, and R. Brendel Journal of Applied Physics 107 (10), 104509, (2010). Links | BibTeX | Schlagwörter: diffusion, Doping, electrical resistivity, Etching, Solar Cells @article{Ulzhöfer2010,
title = {Loss analysis of emitter-wrap-through silicon solar cells by means of experiment and three-dimensional device modeling}, author = {C Ulzhöfer and P P Altermatt and N -P Harder and R Brendel}, doi = {10.1063/1.3373612}, year = {2010}, date = {2010-05-01}, journal = {Journal of Applied Physics}, volume = {107}, number = {10}, pages = {104509}, keywords = {diffusion, Doping, electrical resistivity, Etching, Solar Cells}, pubstate = {published}, tppubtype = {article} } |
2009 |
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B. Lim, A. Liu, D. Macdonald, K. Bothe, and J. Schmidt Applied Physics Letters 95 (23), 232109, (2009). Links | BibTeX | Schlagwörter: activation energies, boron, Doping, electron densities of states, silicon @article{BLim2009,
title = {Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon}, author = {B Lim and A Liu and D Macdonald and K Bothe and J Schmidt}, doi = {10.1063/1.3272918}, year = {2009}, date = {2009-12-01}, journal = {Applied Physics Letters}, volume = {95}, number = {23}, pages = {232109}, keywords = {activation energies, boron, Doping, electron densities of states, silicon}, pubstate = {published}, tppubtype = {article} } |
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J. Schmidt, N. Thiemann, R. Bock, and R. Brendel Recombination lifetimes in highly aluminum-doped silicon Artikel Journal of Applied Physics 106 (9), 093707, (2009). Links | BibTeX | Schlagwörter: aluminium, diffusion, Doping, electric fields, silicon @article{Schmidt2009b,
title = {Recombination lifetimes in highly aluminum-doped silicon}, author = {J Schmidt and N Thiemann and R Bock and R Brendel}, doi = {10.1063/1.3253742}, year = {2009}, date = {2009-11-01}, journal = {Journal of Applied Physics}, volume = {106}, number = {9}, pages = {093707}, keywords = {aluminium, diffusion, Doping, electric fields, silicon}, pubstate = {published}, tppubtype = {article} } |
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W. Stockum, I. Köhler, O. Doll, M. James, E. Plummer, L. Nanson, M. Prütz, S. Wyczanowski, M. Jahn, V. Mertens, and N. -P. Harder Direct Inkjet Printing of SiO2 Diffusion Barrier for the Formation of Local Boron Back Surface Fields Inproceedings WIP (Hrsg.): 24th European Photovoltaic Solar Energy Conference, 1723-1726, Hamburg, Germany, (2009), ISBN: 3-936338-25-6. Links | BibTeX | Schlagwörter: diffusion, Diffusion Barrier, Doping, Inkjet, LBSF @inproceedings{Stockum2009,
title = {Direct Inkjet Printing of SiO2 Diffusion Barrier for the Formation of Local Boron Back Surface Fields}, author = {W Stockum and I Köhler and O Doll and M James and E Plummer and L Nanson and M Prütz and S Wyczanowski and M Jahn and V Mertens and N -P Harder}, editor = {WIP}, doi = {10.4229/24thEUPVSEC2009-2CV.5.4}, isbn = {3-936338-25-6}, year = {2009}, date = {2009-09-01}, booktitle = {24th European Photovoltaic Solar Energy Conference}, pages = {1723-1726}, address = {Hamburg, Germany}, keywords = {diffusion, Diffusion Barrier, Doping, Inkjet, LBSF}, pubstate = {published}, tppubtype = {inproceedings} } |