1.
L Helmich; D C Walter; J Schmidt
In: IEEE Journal of Photovoltaics, Bd. 9, Nr. 6, S. 1472-1476, 2019, ISSN: 2156-3381.
@article{Helmich2019b,
title = {Direct Examination of the Deactivation of the Boron–Oxygen Center in Cz-Si Solar Cells Under Regeneration Conditions via Electroluminescence},
author = {L Helmich and D C Walter and J Schmidt},
doi = {10.1109/JPHOTOV.2019.2926855},
issn = {2156-3381},
year = {2019},
date = {2019-11-01},
journal = {IEEE Journal of Photovoltaics},
volume = {9},
number = {6},
pages = {1472-1476},
abstract = {We examine the regeneration kinetics of the boron–oxygen defect in boron-doped p-type Czochralski-grown silicon (Cz-Si) solar cells as a function of the excess carrier concentration Δn at the regeneration conditions, i.e., at elevated temperature (140 °C). To perform the regeneration, we apply different forward-bias voltages (V$_rm appl$) to solar cells in darkness and measure directly the emitted electroluminescence (EL) signal at different time steps during the regeneration of the cell. Measuring the EL signal emitted by the solar cell during regeneration, we are able to directly determine Δn during regeneration for each applied voltage. In addition to the EL signal, we measure the electric current flowing through the solar cell during the regeneration process. This current is proportional to the overall recombination rate in the cell and, hence, reflects the changing bulk recombination during the regeneration process. From the measured time-dependent cell current, we determine the deactivation rate constant R$_rm de$ of the boron–oxygen defect. Our experimental results unambiguously show that R$_rm de$ increases proportionally with Δn during the regeneration process.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We examine the regeneration kinetics of the boron–oxygen defect in boron-doped p-type Czochralski-grown silicon (Cz-Si) solar cells as a function of the excess carrier concentration Δn at the regeneration conditions, i.e., at elevated temperature (140 °C). To perform the regeneration, we apply different forward-bias voltages (V$_rm appl$) to solar cells in darkness and measure directly the emitted electroluminescence (EL) signal at different time steps during the regeneration of the cell. Measuring the EL signal emitted by the solar cell during regeneration, we are able to directly determine Δn during regeneration for each applied voltage. In addition to the EL signal, we measure the electric current flowing through the solar cell during the regeneration process. This current is proportional to the overall recombination rate in the cell and, hence, reflects the changing bulk recombination during the regeneration process. From the measured time-dependent cell current, we determine the deactivation rate constant R$_rm de$ of the boron–oxygen defect. Our experimental results unambiguously show that R$_rm de$ increases proportionally with Δn during the regeneration process.
2.
D Macdonald; A Liu; A Cuevas; B Lim; J Schmidt
The impact of dopant compensation on the boron–oxygen defect in p- and n-type crystalline silicon Artikel
In: physica status solidi (a), Bd. 208, Nr. 3, S. 559-563, 2011, ISSN: 1862-6319.
@article{Macdonald2011,
title = {The impact of dopant compensation on the boron–oxygen defect in p- and n-type crystalline silicon},
author = {D Macdonald and A Liu and A Cuevas and B Lim and J Schmidt},
doi = {10.1002/pssa.201000146},
issn = {1862-6319},
year = {2011},
date = {2011-03-01},
journal = {physica status solidi (a)},
volume = {208},
number = {3},
pages = {559-563},
publisher = {WILEY-VCH Verlag},
keywords = {},
pubstate = {published},
tppubtype = {article}
}