Veröffentlichungen
2016 |
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N. Wehmeier, B. Lim, A. Merkle, A. Tempez, S. Legendre, H. Wagner, A. Nowack, T. Dullweber, and P. P. Altermatt PECVD BSG diffusion sources for simplified high-efficiency n-PERT BJ and BJBC solar cells Artikel IEEE Journal of Photovoltaics 6 (1), 119-125, (2016). Abstract | Links | BibTeX | Schlagwörter: Back-junction back-contact (BJBC) cell, boron, boron diffusion source, codiffusion, Conductivity, Fabrication, Furnaces, n-PERT solar cell, Photovoltaic cells, Plasma measurements, plasma-enhanced chemical vapor deposition (PECVD) boron silicate glass (BSG), silicon, simulation model @article{Wehmeier2016c,
title = {PECVD BSG diffusion sources for simplified high-efficiency n-PERT BJ and BJBC solar cells}, author = {N Wehmeier and B Lim and A Merkle and A Tempez and S Legendre and H Wagner and A Nowack and T Dullweber and P P Altermatt}, doi = {10.1109/JPHOTOV.2015.2493364}, year = {2016}, date = {2016-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {6}, number = {1}, pages = {119-125}, abstract = {We investigate boron silicate glasses (BSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) as a boron diffusion source on n-type wafers for the simplified fabrication of crystalline Si solar cells by the codiffusion processes. By varying the SiH4/B2 H6 gas flow ratio and the layer thickness of the PECVD BSG layers, we obtain sheet resistivities in a wide range from 30 to 500 Ω/□ after thermal B drive-in. Emitter saturation current densities as low as J0e = 4 fA/cm2 (for Rsheet = 236 Ω/□) are demonstrated using PECVD BSG layers as diffusion sources. A boron concentration in the PECVD BSG of up to 6.4 × 1021 cm-3 is measured by plasma profiling time-of-flight mass spectrometry (PP-TOFMS). A process simulation model of the B diffusion from the PECVD BSG into the Si substrate reproduces the experimental B concentration profile in the Si, measured both by PP-TOFMS and electrochemical capacitance- voltage (ECV) measurements. We fabricate industrial-type passivated emitter and rear totally diffused back-junction (PERT BJ) solar cells, as well as back-junction back-contact cells on n-type wafers. Applying codiffusion from PECVD BSG layers and thus a lean process flow including only one high-temperature step, we demonstrate n-PERT BJ cells with conversion efficiencies of up to 19.85%.}, keywords = {Back-junction back-contact (BJBC) cell, boron, boron diffusion source, codiffusion, Conductivity, Fabrication, Furnaces, n-PERT solar cell, Photovoltaic cells, Plasma measurements, plasma-enhanced chemical vapor deposition (PECVD) boron silicate glass (BSG), silicon, simulation model}, pubstate = {published}, tppubtype = {article} } We investigate boron silicate glasses (BSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) as a boron diffusion source on n-type wafers for the simplified fabrication of crystalline Si solar cells by the codiffusion processes. By varying the SiH4/B2 H6 gas flow ratio and the layer thickness of the PECVD BSG layers, we obtain sheet resistivities in a wide range from 30 to 500 Ω/□ after thermal B drive-in. Emitter saturation current densities as low as J0e = 4 fA/cm2 (for Rsheet = 236 Ω/□) are demonstrated using PECVD BSG layers as diffusion sources. A boron concentration in the PECVD BSG of up to 6.4 × 1021 cm-3 is measured by plasma profiling time-of-flight mass spectrometry (PP-TOFMS). A process simulation model of the B diffusion from the PECVD BSG into the Si substrate reproduces the experimental B concentration profile in the Si, measured both by PP-TOFMS and electrochemical capacitance- voltage (ECV) measurements. We fabricate industrial-type passivated emitter and rear totally diffused back-junction (PERT BJ) solar cells, as well as back-junction back-contact cells on n-type wafers. Applying codiffusion from PECVD BSG layers and thus a lean process flow including only one high-temperature step, we demonstrate n-PERT BJ cells with conversion efficiencies of up to 19.85%.
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