1.
D Bredemeier; D C Walter; R Heller; J Schmidt
In: physica status solidi (RRL) – Rapid Research Letters, Bd. 13, Nr. 8, S. 1900201, 2019.
@article{Bredemeier2019b,
title = {Impact of Hydrogen-Rich Silicon Nitride Material Properties on Light-Induced Lifetime Degradation in Multicrystalline Silicon},
author = {D Bredemeier and D C Walter and R Heller and J Schmidt},
doi = {10.1002/pssr.201900201},
year = {2019},
date = {2019-08-01},
journal = {physica status solidi (RRL) – Rapid Research Letters},
volume = {13},
number = {8},
pages = {1900201},
abstract = {The root cause of “Light and Elevated Temperature Induced Degradation” (LeTID) of the carrier lifetime in multicrystalline silicon (mc-Si) wafers is investigated by depositing hydrogen-rich silicon nitride (SiNx:H) films of different compositions on boron-doped mc-Si wafers. The extent of LeTID observed in mc-Si after rapid thermal annealing (RTA) shows a positive correlation with the amount of hydrogen introduced from the SiNx:H layers into the bulk. The concentration of in-diffused hydrogen is quantified via measuring the resistivity change due to the formation of boron–hydrogen pairs in boron-doped float-zone silicon wafers processed in parallel to the mc-Si wafers. The measurements clearly show that the in-diffusion of hydrogen into the silicon bulk during RTA depends on both the atomic density of the SiNx:H film as well as the film thickness. Importantly, the impact of SiNx:H film properties on LeTID shows the same qualitative dependence as the hydrogen content in the silicon bulk, providing evidence that hydrogen is involved in the LeTID defect activation process.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The root cause of “Light and Elevated Temperature Induced Degradation” (LeTID) of the carrier lifetime in multicrystalline silicon (mc-Si) wafers is investigated by depositing hydrogen-rich silicon nitride (SiNx:H) films of different compositions on boron-doped mc-Si wafers. The extent of LeTID observed in mc-Si after rapid thermal annealing (RTA) shows a positive correlation with the amount of hydrogen introduced from the SiNx:H layers into the bulk. The concentration of in-diffused hydrogen is quantified via measuring the resistivity change due to the formation of boron–hydrogen pairs in boron-doped float-zone silicon wafers processed in parallel to the mc-Si wafers. The measurements clearly show that the in-diffusion of hydrogen into the silicon bulk during RTA depends on both the atomic density of the SiNx:H film as well as the film thickness. Importantly, the impact of SiNx:H film properties on LeTID shows the same qualitative dependence as the hydrogen content in the silicon bulk, providing evidence that hydrogen is involved in the LeTID defect activation process.