@article{Haase2018,
title = {Perimeter Recombination in 25%-Efficient IBC Solar Cells With Passivating POLO Contacts for Both Polarities},
author = {F Haase and S Schäfer and C Klamt and F Kiefer and J Krügener and R Brendel and R Peibst},
doi = {10.1109/JPHOTOV.2017.2762592},
issn = {2156-3381},
year = {2018},
date = {2018-01-01},
journal = {IEEE Journal of Photovoltaics},
volume = {8},
number = {1},
pages = {23-29},
abstract = {We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2 × 2 cm2 -sized cell is processed on a 100 mm wafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 Ω cm and even 0.9%abs for a wafer resistivity of 80 Ω cm.},
keywords = {Area measurement, charge carrier lifetime, Charge carrier lifetime analysis, Current measurement, Density measurement, Lighting, passivating contacts, perimeter recombination, Photovoltaic cells, Radiative recombination},
pubstate = {published},
tppubtype = {article}
}