Veröffentlichungen
2018 |
F. Haase, S. Schäfer, C. Klamt, F. Kiefer, J. Krügener, R. Brendel, and R. Peibst IEEE Journal of Photovoltaics 8 (1), 23-29, (2018), ISSN: 2156-3381. Abstract | Links | BibTeX | Schlagwörter: Area measurement, charge carrier lifetime, Charge carrier lifetime analysis, Current measurement, Density measurement, Lighting, passivating contacts, perimeter recombination, Photovoltaic cells, Radiative recombination @article{Haase2018,
title = {Perimeter Recombination in 25%-Efficient IBC Solar Cells With Passivating POLO Contacts for Both Polarities}, author = {F Haase and S Schäfer and C Klamt and F Kiefer and J Krügener and R Brendel and R Peibst}, doi = {10.1109/JPHOTOV.2017.2762592}, issn = {2156-3381}, year = {2018}, date = {2018-01-01}, journal = {IEEE Journal of Photovoltaics}, volume = {8}, number = {1}, pages = {23-29}, abstract = {We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2 × 2 cm2 -sized cell is processed on a 100 mm wafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 Ω cm and even 0.9%abs for a wafer resistivity of 80 Ω cm.}, keywords = {Area measurement, charge carrier lifetime, Charge carrier lifetime analysis, Current measurement, Density measurement, Lighting, passivating contacts, perimeter recombination, Photovoltaic cells, Radiative recombination}, pubstate = {published}, tppubtype = {article} } We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2 × 2 cm2 -sized cell is processed on a 100 mm wafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 Ω cm and even 0.9%abs for a wafer resistivity of 80 Ω cm.
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