1.
R Peibst; M Rienäcker; B Min; C Klamt; R Niepelt; T F Wietler; T Dullweber; E Sauter; J Hübner; M Oestreich; R Brendel
In: IEEE Journal of Photovoltaics, Bd. 9, Nr. 1, S. 49-54, 2019, ISSN: 2156-3381.
@article{Peibst2019,
title = {From PERC to Tandem: POLO- and p+/n+ Poly-Si Tunneling Junction as Interface Between Bottom and Top Cell},
author = {R Peibst and M Rienäcker and B Min and C Klamt and R Niepelt and T F Wietler and T Dullweber and E Sauter and J Hübner and M Oestreich and R Brendel},
doi = {10.1109/JPHOTOV.2018.2876999},
issn = {2156-3381},
year = {2019},
date = {2019-01-01},
journal = {IEEE Journal of Photovoltaics},
volume = {9},
number = {1},
pages = {49-54},
abstract = {We present a novel cell concept that combines the tandem cell approach with the passivated emitter and rear cells (PERC) mainstream technology. As an interface between Si bottom and top cell, we utilize passivating n+-type polysilicon on oxide (POLO) contacts and a p+ poly-Si/n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process sequence where the POCl$_3$diffusion and SiN$_textx$deposition are replaced by the POLO junction formation processes. The implied open-circuit voltage iV$_textoc$that is measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum to simulated top cell absorption). On sister cells with planar front side, the respective iV$_textoc$values are 718 mV (696 mV). In order to understand the device physics of our ultra-abrupt p+ poly-Si/n+ poly-Si tunneling junction, we determined the carrier lifetime in the poly-Si by time-resolved photoluminescence. The extracted lifetimes of 42–54 ps enter as input parameter for numerical Sentaurus Device simulations. These simulations reveal the importance of band-to-band and trap-assisted tunneling for a low tunneling junction resistivity of 2.95 mΩ·cm2. Experimentally, an upper limit for the combined junction resistance of the p+ poly-Si/n+ poly-Si/SiO$_textx$stack of 100 mΩ·cm2 is determined.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We present a novel cell concept that combines the tandem cell approach with the passivated emitter and rear cells (PERC) mainstream technology. As an interface between Si bottom and top cell, we utilize passivating n+-type polysilicon on oxide (POLO) contacts and a p+ poly-Si/n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process sequence where the POCl$_3$diffusion and SiN$_textx$deposition are replaced by the POLO junction formation processes. The implied open-circuit voltage iV$_textoc$that is measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum to simulated top cell absorption). On sister cells with planar front side, the respective iV$_textoc$values are 718 mV (696 mV). In order to understand the device physics of our ultra-abrupt p+ poly-Si/n+ poly-Si tunneling junction, we determined the carrier lifetime in the poly-Si by time-resolved photoluminescence. The extracted lifetimes of 42–54 ps enter as input parameter for numerical Sentaurus Device simulations. These simulations reveal the importance of band-to-band and trap-assisted tunneling for a low tunneling junction resistivity of 2.95 mΩ·cm2. Experimentally, an upper limit for the combined junction resistance of the p+ poly-Si/n+ poly-Si/SiO$_textx$stack of 100 mΩ·cm2 is determined.
2.
R Peibst; M Rienäcker; B Min; C Klamt; R Niepelt; T Wietler; T Dullweber; E Sauter; J Hïbner; M Oestreich; R Brendel
p+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications Proceedings Article
In: IEEE, (Hrsg.): 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC 34th EU PVSEC), S. 2635-2637, Waikoloa Village, HI, USA, 2018, ISSN: 0160-8371.
@inproceedings{Peibst2018db,
title = {p+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications},
author = {R Peibst and M Rienäcker and B Min and C Klamt and R Niepelt and T Wietler and T Dullweber and E Sauter and J Hïbner and M Oestreich and R Brendel},
editor = {IEEE},
doi = {10.1109/PVSC.2018.8548032},
issn = {0160-8371},
year = {2018},
date = {2018-06-01},
booktitle = {2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC 34th EU PVSEC)},
pages = {2635-2637},
address = {Waikoloa Village, HI, USA},
abstract = {We present a novel cell concept that combines the tandem cell approach with the PERC mainstream technology. As an interface between Si bottom and top cell, we utilize passivating n+-type polysilicon on oxide (POLO) contacts and a p+ poly-Si / n+poly-Si tunneling junction. Our full area PERC+Si bottom cells are fabricated within a typical industrial process sequence where the POCl3-diffusion and SiNxdeposition are replaced by the POLO junction formation processes. The implied open circuit voltage iVocmeasured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum), respectively.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We present a novel cell concept that combines the tandem cell approach with the PERC mainstream technology. As an interface between Si bottom and top cell, we utilize passivating n+-type polysilicon on oxide (POLO) contacts and a p+ poly-Si / n+poly-Si tunneling junction. Our full area PERC+Si bottom cells are fabricated within a typical industrial process sequence where the POCl3-diffusion and SiNxdeposition are replaced by the POLO junction formation processes. The implied open circuit voltage iVocmeasured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum), respectively.