@article{Kruse2017b,
title = {Impact of Contacting Geometries When Measuring Fill Factors of Solar Cell Current-Voltage Characteristics},
author = {C N Kruse and M Wolf and C Schinke and D Hinken and R Brendel and K Bothe},
doi = {10.1109/JPHOTOV.2017.2677084},
issn = {2156-3381},
year = {2017},
date = {2017-05-01},
journal = {IEEE Journal of Photovoltaics},
volume = {7},
number = {3},
pages = {747-754},
abstract = {We analyze the influence of a variety of different contacting geometries on the fill factor (FF) of solar cell I-V measurements. For this analysis, we compare a wide variety of modeled and measured FFs of Si solar cells. We consistently find large FF differences between individual contacting geometries. These differences amount to up to 3%abs for high busbar resistivities of up to 40 Ω/m. We analyze the contacting geometries for their sensitivity on uncontrolled variations of the contacting resistances. In this analysis, we find that using triplet rather than tandem configurations and using a larger number of test probes reduces the impact of varying contacting resistances to below 0.02%abs. We propose a contacting geometry that we consider to be suitable for calibrated I-V measurements. This contacting scheme is a configuration with a total of five triplets consisting of two current probes and one sense probe. The sense probe is positioned to measure the average busbar potential between the current probes. This is the optimal contacting geometry in terms of a low sensitivity to the busbar resistivity and variations of contacting resistances. In addition, this geometry does not impose unnecessarily large mechanical stress to the cell under measurement.},
keywords = {Analytical models, Bars, Characterization of photovoltaics (PV), Current measurement, current–voltage characteristics, Electric potential, IEC standards, Numerical models, Photovoltaic cells, Probes},
pubstate = {published},
tppubtype = {article}
}

@inproceedings{Chen2014b,
title = {Al-alloyed local contacts for industrial PERC cells by local printing},
author = {Y Chen and P P Altermatt and J Dong and S Zhang and J Liu and D Chen and W Deng and Y Jiang and B Liu and Wenming Xiao and H Zhu and H Chen and Haijun Jiao and X Pan and M Zhong and D Wang and J Sheng and Y Zhang and H Shen and Z Feng and P J Verlinden},
doi = {10.1109/PVSC.2014.6925645},
issn = {0160-8371},
year = {2014},
date = {2014-06-01},
booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)},
pages = {3322-3325},
keywords = {Firing, metallization, Numerical models, passivation, PERC cell, Photovoltaic cells, Printing, Screen printing, silicon, voids},
pubstate = {published},
tppubtype = {inproceedings}
}

@inproceedings{Wagner2011,
title = {Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer},
author = {H Wagner and A Dastgheib-Shirazi and R Chen and S T Dunham and M Kessler and P P Altermatt},
editor = {IEEE},
doi = {10.1109/PVSC.2011.6186566},
issn = {0160-8371},
year = {2011},
date = {2011-06-01},
booktitle = {2011 37th IEEE Photovoltaic Specialists Conference},
pages = {002957-002962},
address = {Seattle, WA, USA},
keywords = {Equations, Glass, Mathematical model, Numerical models, Semiconductor process modeling, silicon, Temperature measurement},
pubstate = {published},
tppubtype = {inproceedings}
}