1.
M Schnabel; M Rienäcker; E L Warren; J F Geisz; R Peibst; P Stradins; A C Tamboli
Equivalent Performance in Three-Terminal and Four-Terminal Tandem Solar Cells Artikel
In: IEEE Journal of Photovoltaics, Bd. 8, Nr. 6, S. 1584-1589, 2018, ISSN: 2156-3381.
@article{Schnabel2018b,
title = {Equivalent Performance in Three-Terminal and Four-Terminal Tandem Solar Cells},
author = {M Schnabel and M Rienäcker and E L Warren and J F Geisz and R Peibst and P Stradins and A C Tamboli},
doi = {10.1109/JPHOTOV.2018.2865175},
issn = {2156-3381},
year = {2018},
date = {2018-11-01},
journal = {IEEE Journal of Photovoltaics},
volume = {8},
number = {6},
pages = {1584-1589},
abstract = {Tandem or multijunction solar cells are a promising method to circumvent the efficiency limit of single-junction solar cells, but there is ongoing debate over how best to interconnect the subcells in a tandem cell. In addition to four-terminal and two-terminal tandem cell architectures, a new three-terminal tandem cell architecture has recently been demonstrated, which features a standard two-terminal (front-back) circuit as well as an interdigitated back contact (IBC) circuit connected to the bottom cell. It has no middle contacts, and thus, maintains some of the simplicity of a two-terminal tandem. In this study, we measure four-terminal GaInP//Si and GaInP/GaAs//Si tandem cells in four-terminal and three-terminal configurations by connecting wires to mimic a three-terminal architecture. We demonstrate that both modes allow the same efficiencies exceeding 30% to be attained. Furthermore, we show that the IBC circuit not only collects excess power from the bottom cell, but that it can inject power into the bottom cell if it is current limiting the front-back circuit, enabling four-terminal performance in monolithic structures, regardless of which cell delivers less current.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Tandem or multijunction solar cells are a promising method to circumvent the efficiency limit of single-junction solar cells, but there is ongoing debate over how best to interconnect the subcells in a tandem cell. In addition to four-terminal and two-terminal tandem cell architectures, a new three-terminal tandem cell architecture has recently been demonstrated, which features a standard two-terminal (front-back) circuit as well as an interdigitated back contact (IBC) circuit connected to the bottom cell. It has no middle contacts, and thus, maintains some of the simplicity of a two-terminal tandem. In this study, we measure four-terminal GaInP//Si and GaInP/GaAs//Si tandem cells in four-terminal and three-terminal configurations by connecting wires to mimic a three-terminal architecture. We demonstrate that both modes allow the same efficiencies exceeding 30% to be attained. Furthermore, we show that the IBC circuit not only collects excess power from the bottom cell, but that it can inject power into the bottom cell if it is current limiting the front-back circuit, enabling four-terminal performance in monolithic structures, regardless of which cell delivers less current.
2.
A Fell; K R McIntosh; P P Altermatt; G J M Janssen; R Stangl; A Ho-Baillie; H Steinkemper; J Greulich; M Muller; B Min; K C Fong; M Hermle; I G Romijn; M D Abbott
Input parameters for the simulation of silicon solar cells in 2014 Artikel
In: IEEE Journal of Photovoltaics, Bd. 5, Nr. 4, S. 1250-1263, 2015.
@article{Fell2015,
title = {Input parameters for the simulation of silicon solar cells in 2014},
author = {A Fell and K R McIntosh and P P Altermatt and G J M Janssen and R Stangl and A Ho-Baillie and H Steinkemper and J Greulich and M Muller and B Min and K C Fong and M Hermle and I G Romijn and M D Abbott},
doi = {10.1109/JPHOTOV.2015.2430016},
year = {2015},
date = {2015-07-01},
journal = {IEEE Journal of Photovoltaics},
volume = {5},
number = {4},
pages = {1250-1263},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
3.
N Mingirulli; J Haschke; R Gogolin; R Ferré; T F Schulze; J Düsterhöft; N P Harder; L Korte
Interdigitated back-contacted silicon heterojunction solar cells with improved fill-factor and efficiency Proceedings Article
In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 003338, Seattle, WA, USA, 2011, ISSN: 0160-8371.
@inproceedings{Mingirulli2011b,
title = {Interdigitated back-contacted silicon heterojunction solar cells with improved fill-factor and efficiency},
author = {N Mingirulli and J Haschke and R Gogolin and R Ferré and T F Schulze and J Düsterhöft and N P Harder and L Korte},
editor = {IEEE},
doi = {10.1109/PVSC.2011.6186658},
issn = {0160-8371},
year = {2011},
date = {2011-06-01},
booktitle = {2011 37th IEEE Photovoltaic Specialists Conference},
pages = {003338},
address = {Seattle, WA, USA},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}