Veröffentlichungen
2021 |
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S. Schäfer, A. Mercker, A. Köhler, T. Neubert, L. Mettner, B. Wolpensinger, V. Mertens, and R. Peibst Journal of Applied Physics 129 (13), 133103, (2021). Abstract | Links | BibTeX | Schlagwörter: Chemical elements, Chemical processes, electric measurements, Lasers, optical properties, passivation, Semiconductor materials, silicon, Solar Cells, Transmission electron microscopy @article{Schäfer2021,
title = {Role of oxygen in the UV-ps laser triggered amorphization of poly-Si for Si solar cells with local passivated contacts}, author = {S Schäfer and A Mercker and A Köhler and T Neubert and L Mettner and B Wolpensinger and V Mertens and R Peibst}, doi = {10.1063/5.0045829}, year = {2021}, date = {2021-04-07}, journal = {Journal of Applied Physics}, volume = {129}, number = {13}, pages = {133103}, abstract = {In recent years, poly-Si based passivated contacts elevated the conversion efficiencies of crystalline Si solar cells to levels of 26%abs due to their outstanding electrical surface passivation performance and current transport characteristics. A major associated challenge, however, is the large parasitic light absorption within the doped poly-Si, regardless if the contacts are applied on the front and/or on the rear side of the solar cell. It, therefore, might be beneficial to confine the passivated contacts to local regions underneath the metal contacts. We present an effective and flexible laser-based approach to structure the poly-Si layer after its full-area deposition. Laser pulses with a pulse duration of 9 ps and a wavelength of 355 nm trigger an amorphization of the poly-Si surface. The minimum threshold fluence for amorphization is between 89 and 129 mJ/cm2. The a-Si layer, which is laterally homogeneous and up to (33 ± 4) nm in thickness, works as an etch barrier in an alkaline solution. The most robust barrier corresponding to the maximum thickness of the a-Si layer is found for a fluence of (270 ± 30) mJ/cm2. Besides the impact of the laser fluence on the etch resistiveness of the modified poly-Si layer, we study the role of oxygen during the laser process. We find that oxygen becomes incorporated into the material for certain laser fluences, which results in a more robust etch barrier. The amount of oxygen incorporated is below 3 wt. %. Eventually, we present a phenomenological model of our findings.}, keywords = {Chemical elements, Chemical processes, electric measurements, Lasers, optical properties, passivation, Semiconductor materials, silicon, Solar Cells, Transmission electron microscopy}, pubstate = {published}, tppubtype = {article} } In recent years, poly-Si based passivated contacts elevated the conversion efficiencies of crystalline Si solar cells to levels of 26%abs due to their outstanding electrical surface passivation performance and current transport characteristics. A major associated challenge, however, is the large parasitic light absorption within the doped poly-Si, regardless if the contacts are applied on the front and/or on the rear side of the solar cell. It, therefore, might be beneficial to confine the passivated contacts to local regions underneath the metal contacts. We present an effective and flexible laser-based approach to structure the poly-Si layer after its full-area deposition. Laser pulses with a pulse duration of 9 ps and a wavelength of 355 nm trigger an amorphization of the poly-Si surface. The minimum threshold fluence for amorphization is between 89 and 129 mJ/cm2. The a-Si layer, which is laterally homogeneous and up to (33 ± 4) nm in thickness, works as an etch barrier in an alkaline solution. The most robust barrier corresponding to the maximum thickness of the a-Si layer is found for a fluence of (270 ± 30) mJ/cm2. Besides the impact of the laser fluence on the etch resistiveness of the modified poly-Si layer, we study the role of oxygen during the laser process. We find that oxygen becomes incorporated into the material for certain laser fluences, which results in a more robust etch barrier. The amount of oxygen incorporated is below 3 wt. %. Eventually, we present a phenomenological model of our findings.
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2018 |
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V. Titova, and J. Schmidt Implementation of full-area-deposited electron-selective TiOx layers into silicon solar cells Artikel AIP Advances 8 (12), 125023, (2018). Abstract | Links | BibTeX | Schlagwörter: atomic layer deposition, Electrical properties and parameters, Internal quantum efficiency, passivation, Solar Cells, Transition metal oxides, Work functions @article{Titova2018c,
title = {Implementation of full-area-deposited electron-selective TiOx layers into silicon solar cells}, author = {V Titova and J Schmidt}, doi = {10.1063/1.5061924}, year = {2018}, date = {2018-12-26}, journal = {AIP Advances}, volume = {8}, number = {12}, pages = {125023}, abstract = {We examine two different silicon solar cell designs featuring full-area electron-selective contacts based on ultrathin (2–3 nm) titanium oxide (TiOx) films deposited by atomic layer deposition. The first cell design applies a layer stack to the cell front, which is composed of an ultrathin intrinsic amorphous silicon (i-a-Si:H) layer for interface passivation, the TiOx film and an indium tin oxide (ITO) layer to provide a good lateral conductance for electrons to the metal fingers. Whereas carrier lifetime measurements on test structures promise high implied open-circuit voltages Voc up to 726 mV, the realized solar cells achieve disappointingly low Voc values <400 mV. The J-V parameters of this cell type are negatively affected by a reverse diode occurring due to the contacting of the TiOx by the high-work function ITO layer. In the second cell type, we implement a layer stack to the cell rear, which is composed of an ultrathin silicon oxide (SiOy) layer, the TiOx film and a full-area-deposited aluminum (Al) layer. Initial Voc values of these cells are relatively low (<600 mV), but improve significantly after annealing at 350°C. The best cell featuring a SiOy/TiOx/Al rear contact achieves an open-circuit voltage of 661 mV and an efficiency of 20.3%. No reverse diode is observed, which is attributed to the lower work function of the Al compared to ITO in the first cell design. From internal quantum efficiency measurements, we extract a rear surface recombination velocity Srear of (52±20) cm/s for our best cell, which is well compatible with efficiencies exceeding 23%.}, keywords = {atomic layer deposition, Electrical properties and parameters, Internal quantum efficiency, passivation, Solar Cells, Transition metal oxides, Work functions}, pubstate = {published}, tppubtype = {article} } We examine two different silicon solar cell designs featuring full-area electron-selective contacts based on ultrathin (2–3 nm) titanium oxide (TiOx) films deposited by atomic layer deposition. The first cell design applies a layer stack to the cell front, which is composed of an ultrathin intrinsic amorphous silicon (i-a-Si:H) layer for interface passivation, the TiOx film and an indium tin oxide (ITO) layer to provide a good lateral conductance for electrons to the metal fingers. Whereas carrier lifetime measurements on test structures promise high implied open-circuit voltages Voc up to 726 mV, the realized solar cells achieve disappointingly low Voc values <400 mV. The J-V parameters of this cell type are negatively affected by a reverse diode occurring due to the contacting of the TiOx by the high-work function ITO layer. In the second cell type, we implement a layer stack to the cell rear, which is composed of an ultrathin silicon oxide (SiOy) layer, the TiOx film and a full-area-deposited aluminum (Al) layer. Initial Voc values of these cells are relatively low (<600 mV), but improve significantly after annealing at 350°C. The best cell featuring a SiOy/TiOx/Al rear contact achieves an open-circuit voltage of 661 mV and an efficiency of 20.3%. No reverse diode is observed, which is attributed to the lower work function of the Al compared to ITO in the first cell design. From internal quantum efficiency measurements, we extract a rear surface recombination velocity Srear of (52±20) cm/s for our best cell, which is well compatible with efficiencies exceeding 23%.
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T. Dullweber, and J. Schmidt Surface passivation of industrial PERC solar cells Buchkapitel J. John (Hrsg.): Surface Passivation of Industrial Crystalline Silicon Solar Cells, Kapitel 8, 95-116, Institution of Engineering and Technology, (2018), ISBN: 978-1-78561-246-6. BibTeX | Schlagwörter: passivation @inbook{Dullweber2018b,
title = {Surface passivation of industrial PERC solar cells}, author = {T Dullweber and J Schmidt}, editor = {J John}, isbn = {978-1-78561-246-6}, year = {2018}, date = {2018-11-30}, booktitle = {Surface Passivation of Industrial Crystalline Silicon Solar Cells}, pages = {95-116}, publisher = {Institution of Engineering and Technology}, chapter = {8}, keywords = {passivation}, pubstate = {published}, tppubtype = {inbook} } |
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R. Peibst, Y. Larionova, S. Reiter, T. F. Wietler, N. Orlowski, S. Schäfer, B. Min, M. Stratmann, D. Tetzlaff, J. Krügener, U. Höhne, J. D. Kähler, H. Mehlich, S. Frigge, and R. Brendel IEEE Journal of Photovoltaics 8 (3), 719-725, (2018), ISSN: 2156-3381. Abstract | Links | BibTeX | Schlagwörter: Carrier Selective Contacts, passivation, Polycrystalline silicon, Silicon solar cell, transparent conductive oxide, Zinc oxide @article{Peibst2018,
title = {Building Blocks for Industrial, Screen-Printed Double-Side Contacted POLO Cells With Highly Transparent ZnO:Al Layers}, author = {R Peibst and Y Larionova and S Reiter and T F Wietler and N Orlowski and S Schäfer and B Min and M Stratmann and D Tetzlaff and J Krügener and U Höhne and J D Kähler and H Mehlich and S Frigge and R Brendel}, doi = {10.1109/JPHOTOV.2018.2813427}, issn = {2156-3381}, year = {2018}, date = {2018-05-01}, journal = {IEEE Journal of Photovoltaics}, volume = {8}, number = {3}, pages = {719-725}, abstract = {We report on an industrial large area, screen-printed, double-side contacted cell with polysilicon on oxide (POLO) junctions on both sides and an energy conversion efficiency of 22.3% (A = 244.15 cm 2, Voc = 714 mV, FF = 81.1%, Jsc = 38.5 mA/cm2, measured in-house). This cell shows an extraordinarily low series resistance below 0.05 Ω cm2. This confirms the low specific junction resistance observed recently for POLO junctions. The present cell suffers from 1) low short-circuit current due to parasitic absorption in the rather thick poly-Si (30 nm), as well as in the indium tin oxide, 2) deterioration of the recombination behavior upon sputter deposition of a transparent conductive oxide (TCO), and 3) shunts near the edge due to nonadapted TCO edge exclusion. We address all of these limitations experimentally. In particular, we developed a plasma-enhanced chemical vapor deposition process for ZnO:Al, which does not compromise the passivation of the POLO junctions underneath. An estimation of the efficiency potential (based on the two-diode model and the assumption that all these building blocks can be successfully combined on a cell level) shows that 25.3% can be achieved with this cell concept. We also look into potential cost advantages of the POLO junction scheme for this cell structure, such as the usage of p-type Cz-Si material and the omission of Ag fingers.}, keywords = {Carrier Selective Contacts, passivation, Polycrystalline silicon, Silicon solar cell, transparent conductive oxide, Zinc oxide}, pubstate = {published}, tppubtype = {article} } We report on an industrial large area, screen-printed, double-side contacted cell with polysilicon on oxide (POLO) junctions on both sides and an energy conversion efficiency of 22.3% (A = 244.15 cm 2, Voc = 714 mV, FF = 81.1%, Jsc = 38.5 mA/cm2, measured in-house). This cell shows an extraordinarily low series resistance below 0.05 Ω cm2. This confirms the low specific junction resistance observed recently for POLO junctions. The present cell suffers from 1) low short-circuit current due to parasitic absorption in the rather thick poly-Si (30 nm), as well as in the indium tin oxide, 2) deterioration of the recombination behavior upon sputter deposition of a transparent conductive oxide (TCO), and 3) shunts near the edge due to nonadapted TCO edge exclusion. We address all of these limitations experimentally. In particular, we developed a plasma-enhanced chemical vapor deposition process for ZnO:Al, which does not compromise the passivation of the POLO junctions underneath. An estimation of the efficiency potential (based on the two-diode model and the assumption that all these building blocks can be successfully combined on a cell level) shows that 25.3% can be achieved with this cell concept. We also look into potential cost advantages of the POLO junction scheme for this cell structure, such as the usage of p-type Cz-Si material and the omission of Ag fingers.
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2017 |
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R. Peibst, Y. Larionova, Reiter. S. N. Orlowski, S. Schäfer, M. Turcu, B. Min, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J-D. Kähler, H. Mehlich, and S. Frigge Industrial, Screen-Printed Double-Side Contacted Polo Cells Inproceedings WIP (Hrsg.): Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition, 451-454, Amsterdam, The Netherlands, (2017), ISBN: 3-936338-47-7. Abstract | Links | BibTeX | Schlagwörter: Carrier Selective Contacts, passivation, Polycrystalline Silicon (Si), Silicon Solar Cell(s), Transparent Conductive Oxide Films @inproceedings{Peibst2017,
title = {Industrial, Screen-Printed Double-Side Contacted Polo Cells}, author = {R Peibst and Y Larionova and S Reiter N Orlowski and S Schäfer and M Turcu and B Min and R Brendel and D Tetzlaff and J Krügener and T Wietler and U Höhne and J-D Kähler and H Mehlich and S Frigge }, editor = {WIP}, doi = {10.4229/EUPVSEC20172017-2DO.2.2}, isbn = {3-936338-47-7}, year = {2017}, date = {2017-09-28}, booktitle = {Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition}, pages = {451-454}, address = {Amsterdam, The Netherlands}, abstract = {We demonstrate an industrial double-side-contacted, screen-printed large area cell with POLO junctions on both sides and an in-house-measured energy conversion efficiency of 22.3 % (A = 244.15 cm2, Voc =714 mV, FF= 81.1 %, Jsc =38.5 mA/cm2). Most remarkably, this cell shows a very low series resistance < 0.05 Ωcm2, which supports previous observations of low specific junction resistance for the POLO scheme. The current limitations of the cell are (i) the low short-circuit current due to parasitic absorption in the rather thick poly-Si (30 nm), as well as in the ITO, (ii) deterioration of the recombination behavior upon TCO sputtering, and (iii) shunts near the edge due to non-adapted TCO edge-exclusion. }, keywords = {Carrier Selective Contacts, passivation, Polycrystalline Silicon (Si), Silicon Solar Cell(s), Transparent Conductive Oxide Films}, pubstate = {published}, tppubtype = {inproceedings} } We demonstrate an industrial double-side-contacted, screen-printed large area cell with POLO junctions on both sides and an in-house-measured energy conversion efficiency of 22.3 % (A = 244.15 cm2, Voc =714 mV, FF= 81.1 %, Jsc =38.5 mA/cm2). Most remarkably, this cell shows a very low series resistance < 0.05 Ωcm2, which supports previous observations of low specific junction resistance for the POLO scheme. The current limitations of the cell are (i) the low short-circuit current due to parasitic absorption in the rather thick poly-Si (30 nm), as well as in the ITO, (ii) deterioration of the recombination behavior upon TCO sputtering, and (iii) shunts near the edge due to non-adapted TCO edge-exclusion.
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B. Min, J. Krügener, M. Müller, K. Bothe, and R. Brendel Energy Procedia 124 (Supplement C), 126-130, (2017), ISSN: 1876-6102, (7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany). Abstract | Links | BibTeX | Schlagwörter: emitter, junction formation, passivation, recombination @article{Min2017d,
title = {Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2}, author = {B Min and J Krügener and M Müller and K Bothe and R Brendel}, doi = {10.1016/j.egypro.2017.09.323}, issn = {1876-6102}, year = {2017}, date = {2017-09-21}, journal = {Energy Procedia}, volume = {124}, number = {Supplement C}, pages = {126-130}, abstract = {This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation qualities on the saturation current density J0e by considering boundary conditions based on published experimental data. Our simulation study shows that there are two possible ways to achieve J0e values below 10 fA/cm2. One is the reduction of the electrically active phosphorus concentration nsurf at the surface beneath 2×10^19 cm−3 and simultaneously reducing the surface recombination velocity Sp to below 103 cm/s. The other contrarily increases nsurf to values of up to 1×10^21 cm−3 while ensuring full activation of all phosphorus dopants. In the latter case, J0e values below 10 fA/cm2 seem possible, even for Sp = 10^7 cm/s which is equal to the thermal velocity.}, note = {7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany}, keywords = {emitter, junction formation, passivation, recombination}, pubstate = {published}, tppubtype = {article} } This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation qualities on the saturation current density J0e by considering boundary conditions based on published experimental data. Our simulation study shows that there are two possible ways to achieve J0e values below 10 fA/cm2. One is the reduction of the electrically active phosphorus concentration nsurf at the surface beneath 2×10^19 cm−3 and simultaneously reducing the surface recombination velocity Sp to below 103 cm/s. The other contrarily increases nsurf to values of up to 1×10^21 cm−3 while ensuring full activation of all phosphorus dopants. In the latter case, J0e values below 10 fA/cm2 seem possible, even for Sp = 10^7 cm/s which is equal to the thermal velocity.
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Y. Larionova, M. Turcu, S. Reiter, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J-D. Kähler, and R. Peibst physica status solidi (a) 214 (8), 1700058, (2017), ISSN: 1862-6319, (1700058). Abstract | Links | BibTeX | Schlagwörter: passivating contact, passivation, polysilicon, Silicon solar cell @article{Larionova2017,
title = {On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces}, author = {Y Larionova and M Turcu and S Reiter and R Brendel and D Tetzlaff and J Krügener and T Wietler and U Höhne and J-D Kähler and R Peibst}, doi = {10.1002/pssa.201700058}, issn = {1862-6319}, year = {2017}, date = {2017-08-01}, journal = {physica status solidi (a)}, volume = {214}, number = {8}, pages = {1700058}, abstract = {We investigate the passivation quality of hole‐collecting junctions consisting of thermally or wet‐chemically grown interfacial oxides, sandwiched between a monocrystalline‐Si substrate and a p‐type polycrystalline‐silicon (Si) layer. The three different approaches for polycrystalline‐Si preparation are compared: the plasma‐enhanced chemical vapor deposition (PECVD) of in situ p+‐type boron‐doped amorphous Si layers, the low pressure chemical vapor deposition (LPCVD) of in situ p+‐type B‐doped polycrystalline Si layers, and the LPCVD of intrinsic amorphous Si, subsequently ion‐implanted with boron. We observe the lowest J0e values of 3.8 fA cm−2 on thermally grown interfacial oxide on planar surfaces for the case of intrinsic amorphous Si deposited by LPCVD and subsequently implanted with boron. Also, we obtain a similar high passivation of p+‐type poly‐Si junctions on wet‐chemically grown oxides as well as for all the investigated polycrystalline‐Si deposition approaches. Conversely, on alkaline‐textured surfaces, J0e is at least 4 times higher compared to planar surfaces. This finding holds for all the junction preparation methods investigated. We show that the higher J0e on textured surfaces can be attributed to a poorer passivation of the p+ poly/c‐Si stacks on (111) when compared to (100) surfaces. }, note = {1700058}, keywords = {passivating contact, passivation, polysilicon, Silicon solar cell}, pubstate = {published}, tppubtype = {article} } We investigate the passivation quality of hole‐collecting junctions consisting of thermally or wet‐chemically grown interfacial oxides, sandwiched between a monocrystalline‐Si substrate and a p‐type polycrystalline‐silicon (Si) layer. The three different approaches for polycrystalline‐Si preparation are compared: the plasma‐enhanced chemical vapor deposition (PECVD) of in situ p+‐type boron‐doped amorphous Si layers, the low pressure chemical vapor deposition (LPCVD) of in situ p+‐type B‐doped polycrystalline Si layers, and the LPCVD of intrinsic amorphous Si, subsequently ion‐implanted with boron. We observe the lowest J0e values of 3.8 fA cm−2 on thermally grown interfacial oxide on planar surfaces for the case of intrinsic amorphous Si deposited by LPCVD and subsequently implanted with boron. Also, we obtain a similar high passivation of p+‐type poly‐Si junctions on wet‐chemically grown oxides as well as for all the investigated polycrystalline‐Si deposition approaches. Conversely, on alkaline‐textured surfaces, J0e is at least 4 times higher compared to planar surfaces. This finding holds for all the junction preparation methods investigated. We show that the higher J0e on textured surfaces can be attributed to a poorer passivation of the p+ poly/c‐Si stacks on (111) when compared to (100) surfaces.
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2016 |
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R. Peibst, U. Römer, Y. Larionova, M. Rienäcker, A. Merkle, N. Folchert, S. Reiter, M. Turcu, B. Min, J. Krügener, D. Tetzlaff, E. Bugiel, T. Wietler, and R. Brendel Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story? Artikel Solar Energy Materials and Solar Cells 158 , 60-67, (2016). Abstract | Links | BibTeX | Schlagwörter: Modelling, passivating contact, passivation, polysilicon, Silicon solar cell @article{Peibst2016b,
title = {Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?}, author = {R Peibst and U Römer and Y Larionova and M Rienäcker and A Merkle and N Folchert and S Reiter and M Turcu and B Min and J Krügener and D Tetzlaff and E Bugiel and T Wietler and R Brendel}, doi = {10.1016/j.solmat.2016.05.045}, year = {2016}, date = {2016-12-01}, journal = {Solar Energy Materials and Solar Cells}, volume = {158}, pages = {60-67}, abstract = {We present arguments that additional effects besides laterally homogenous tunnelling might occur in carrier-selective poly-Si/c-Si junctions: (i) the symmetrical electrical behaviour of n+ and p+ poly-Si/c-Si junctions, (ii) direct observation of structural modifications of the interfacial oxide upon thermal treatment by transmission electron microscopy, even for poly-Si/c-Si junctions with good passivation quality, and (iii) the achievement of low junction resistances even for interfacial oxide thicknesses >2 nm after thermal treatment. We present an alternative picture, essentially based on a localized current flow through the interfacial oxide, mediated either by local reduction of the oxide layer thickness or by pinholes. In consequence, the local current flow implies transport limitations for both minority and majority carriers in the c-Si absorber, and thus a correlation between recombination current and series resistance. Thus, a poly-Si/c-Si junction can also be explained within the framework of a classical pn junction picture for a passivated, locally contacted emitter, e.g. by the model of Fischer. Both electron selective contacts (n+ poly-Si) and hole selective contacts (p+ poly-Si) can be described consistently when using reasonable input parameters. Especially for p+ poly-Si/c-Si junctions, our model could guideline further improvement.}, keywords = {Modelling, passivating contact, passivation, polysilicon, Silicon solar cell}, pubstate = {published}, tppubtype = {article} } We present arguments that additional effects besides laterally homogenous tunnelling might occur in carrier-selective poly-Si/c-Si junctions: (i) the symmetrical electrical behaviour of n+ and p+ poly-Si/c-Si junctions, (ii) direct observation of structural modifications of the interfacial oxide upon thermal treatment by transmission electron microscopy, even for poly-Si/c-Si junctions with good passivation quality, and (iii) the achievement of low junction resistances even for interfacial oxide thicknesses >2 nm after thermal treatment. We present an alternative picture, essentially based on a localized current flow through the interfacial oxide, mediated either by local reduction of the oxide layer thickness or by pinholes. In consequence, the local current flow implies transport limitations for both minority and majority carriers in the c-Si absorber, and thus a correlation between recombination current and series resistance. Thus, a poly-Si/c-Si junction can also be explained within the framework of a classical pn junction picture for a passivated, locally contacted emitter, e.g. by the model of Fischer. Both electron selective contacts (n+ poly-Si) and hole selective contacts (p+ poly-Si) can be described consistently when using reasonable input parameters. Especially for p+ poly-Si/c-Si junctions, our model could guideline further improvement.
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T. Dullweber, and J. Schmidt IEEE Journal of Photovoltaics 6 (5), 1366-1381, (2016). Abstract | Links | BibTeX | Schlagwörter: AlOx, LBSF), light-induced degradation (LID), local aluminum back-surface field (Al-BSF, passivated emitter and rear cell (PERC), passivation, Phosphorus, Photovoltaic cells, Production, rear passivation, Screen printing, silicon, silicon solar cells @article{Dullweber2016b,
title = {Industrial silicon solar cells applying the passivated emitter and rear cell (PERC) concept a review}, author = {T Dullweber and J Schmidt}, doi = {10.1109/JPHOTOV.2016.2571627}, year = {2016}, date = {2016-09-01}, journal = {IEEE Journal of Photovoltaics}, volume = {6}, number = {5}, pages = {1366-1381}, abstract = {Even though the passivated emitter and rear cell (PERC) concept was introduced as a laboratory-type solar cell in 1989, it took 25 years to transfer this concept into industrial mass production. Today, PERC-type solar cells account for 10% of the worldwide produced solar cells, and their share is expected to rapidly increase up to 35% within the next few years. Record efficiencies up to 22.1% of industrial PERC cells approach an efficiency of 22.8% of the lab-type PERC cell in 1989. This paper reviews the most important research results and technological developments of the past 25 years, which enabled the successful transfer of the lab-type PERC concept into industrial mass production. Particular attention is paid to the development of AlOx /SiNy layer stacks with excellent rear surface passivation properties and low production costs. In addition, we summarize the most important research results and technological improvements of industrially processed local aluminum rear contacts. Furthermore, we describe the most relevant process flows to manufacture industrial PERC cells and address silicon wafer material requirements regarding high and stable charge carrier lifetimes. An outlook is provided on future development opportunities, which may further increase the conversion efficiency and the energy yield of industrial PERC solar cells.}, keywords = {AlOx, LBSF), light-induced degradation (LID), local aluminum back-surface field (Al-BSF, passivated emitter and rear cell (PERC), passivation, Phosphorus, Photovoltaic cells, Production, rear passivation, Screen printing, silicon, silicon solar cells}, pubstate = {published}, tppubtype = {article} } Even though the passivated emitter and rear cell (PERC) concept was introduced as a laboratory-type solar cell in 1989, it took 25 years to transfer this concept into industrial mass production. Today, PERC-type solar cells account for 10% of the worldwide produced solar cells, and their share is expected to rapidly increase up to 35% within the next few years. Record efficiencies up to 22.1% of industrial PERC cells approach an efficiency of 22.8% of the lab-type PERC cell in 1989. This paper reviews the most important research results and technological developments of the past 25 years, which enabled the successful transfer of the lab-type PERC concept into industrial mass production. Particular attention is paid to the development of AlOx /SiNy layer stacks with excellent rear surface passivation properties and low production costs. In addition, we summarize the most important research results and technological improvements of industrially processed local aluminum rear contacts. Furthermore, we describe the most relevant process flows to manufacture industrial PERC cells and address silicon wafer material requirements regarding high and stable charge carrier lifetimes. An outlook is provided on future development opportunities, which may further increase the conversion efficiency and the energy yield of industrial PERC solar cells.
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Y. Larionova, R. Peibst, M. Turcu, S. Reiter, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, and J. -D. Kähler Optimization of p+ poly-Si/c-Si junctions on wet-chemically grown interfacial oxides and on different wafer morphologies Inproceedings WIP (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, 452-455, Munich, Germany, (2016), ISBN: 3-936338-41-8. Abstract | Links | BibTeX | Schlagwörter: Contact, passivation, Polycrystalline Silicon (Si), Silicon Solar Cell(s) @inproceedings{Larionova2016,
title = {Optimization of p+ poly-Si/c-Si junctions on wet-chemically grown interfacial oxides and on different wafer morphologies}, author = {Y Larionova and R Peibst and M Turcu and S Reiter and R Brendel and D Tetzlaff and J Krügener and T Wietler and U Höhne and J -D Kähler}, editor = {WIP}, doi = {10.4229/EUPVSEC20162016-2CO.4.3}, isbn = {3-936338-41-8}, year = {2016}, date = {2016-09-01}, booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, pages = {452-455}, address = {Munich, Germany}, abstract = {In this paper, we study the passivation quality of p-type poly-Si / c-Si junctions annealed at different temperatures. We evaluate wet-chemically grown (ozonized in DI-H2O) and thermally-grown interfacial oxides and compare boron ion implantation into intrinsic poly-Si with different doses to in situ p+ doping during the LPCVD Si deposition process. The experimental results show that decreasing the doping concentration of the p+ poly-Si layer and increasing the annealing temperature improve the passivation quality of the p+ poly-Si / c-Si junctions. Additionally, we explore the passivation quality of p-type poly-Si / c-Si junctions on different surface morphologies and orientations, i.e. on planar (100) and (111) as well as alkaline textured Si surfaces. Textured surfaces show a strongly increased J0e, possibly due to a worse p-type poly-Si passivation on (111) surfaces. The emitter saturation current density J0e of 8 fA/cm² achieved on planar (100) surfaces is the lowest value reported for p+ poly-Si / c-Si junctions with wet-chemically grown oxides so far. }, keywords = {Contact, passivation, Polycrystalline Silicon (Si), Silicon Solar Cell(s)}, pubstate = {published}, tppubtype = {inproceedings} } In this paper, we study the passivation quality of p-type poly-Si / c-Si junctions annealed at different temperatures. We evaluate wet-chemically grown (ozonized in DI-H2O) and thermally-grown interfacial oxides and compare boron ion implantation into intrinsic poly-Si with different doses to in situ p+ doping during the LPCVD Si deposition process. The experimental results show that decreasing the doping concentration of the p+ poly-Si layer and increasing the annealing temperature improve the passivation quality of the p+ poly-Si / c-Si junctions. Additionally, we explore the passivation quality of p-type poly-Si / c-Si junctions on different surface morphologies and orientations, i.e. on planar (100) and (111) as well as alkaline textured Si surfaces. Textured surfaces show a strongly increased J0e, possibly due to a worse p-type poly-Si passivation on (111) surfaces. The emitter saturation current density J0e of 8 fA/cm² achieved on planar (100) surfaces is the lowest value reported for p+ poly-Si / c-Si junctions with wet-chemically grown oxides so far.
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R. Peibst, Y. Larionova, S. Reiter, M. Turcu, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J. -D. Kähler, H. Mehlich, and S. Frigge Implementation of n+ and p+ poly junctions on front and rear side of double-side-contacted industrial silicon solar cells Inproceedings WIP (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, 323-327, Munich, Germany, (2016), ISBN: 3-936338-41-8. Abstract | Links | BibTeX | Schlagwörter: Carrier Selective Contacts, passivation, Polycrystalline Silicon (Si), Silicon Solar Cell(s) @inproceedings{Peibst2016,
title = {Implementation of n+ and p+ poly junctions on front and rear side of double-side-contacted industrial silicon solar cells}, author = {R Peibst and Y Larionova and S Reiter and M Turcu and R Brendel and D Tetzlaff and J Krügener and T Wietler and U Höhne and J -D Kähler and H Mehlich and S Frigge}, editor = {WIP}, doi = {10.4229/EUPVSEC20162016-2BO.3.2}, isbn = {3-936338-41-8}, year = {2016}, date = {2016-09-01}, booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, pages = {323-327}, address = {Munich, Germany}, abstract = {We present building blocks for double-side contacted cells with poly-Si on passivating interfacial oxides (POLO) junctions for both polarities, fabricated by a lean process flow. For this purpose, we evaluate p+ and n+ POLO junctions utilizing ~1.7 nm thin wet chemically grown (ozone diluted in di-ionized water) and ozone grown interfacial oxides on different surface morphologies. We achieve excellent passivation quality on damaged etched (100) surfaces with record low J0 values of 0.6 fA/cm2 (implied open circuit voltage Voc,impl 748 mV) for n+ POLO junctions and of 5 fA/cm2 (Voc,impl 729 mV) for p+ POLO junctions. However, on alkaline textured surfaces, ~6 times higher J0 values are obtained. We compare ex-situ-doped poly-Si (intrinsically deposited and subsequently ion implanted) with in-situ-doped poly-Si layers. For POLO junctions formed on textured surfaces by utilizing wet chemical oxides and low-pressure chemical vapor deposition (LP-CVD) of 20 nm in-situ n+-doped poly-Si, we obtain J0 values down to 2.4 fA/cm2. Also with plasma-enhanced chemical vapor deposition (PE-CVD) of in-situ-doped amorphous Si and subsequent crystallization, we obtain comparable results. A transparent conductive oxide (TCO), preferably temperature stable, seems to be required to support the limited lateral conductivity of POLO junctions with poly-Si layer thicknesses ≤ 20 nm. We find that the conductivity of indium tin oxide (ITO) strongly decreases upon firing, while the initial conductivity can be maintained even for firing temperatures of 800°C when capping the ITO with a thin SiNx layer. Our recent cell precursors (156 mm 156 mm Cz n-type wafers with an n+ POLO junction on an alkaline textured front-side and a p+ POLO junction on a damage-etched rear-side) exhibit a promising Voc,impl value of 732 mV, and a total J0 value of the doped surfaces of 12 fA/cm2. In combination with the high pseudo fill factor of 85.3 % and with a short-circuit current density of 40 mA/cm2 as calculated by ray tracing simulations, the corresponding pseudo efficiency is 25.0 %. }, keywords = {Carrier Selective Contacts, passivation, Polycrystalline Silicon (Si), Silicon Solar Cell(s)}, pubstate = {published}, tppubtype = {inproceedings} } We present building blocks for double-side contacted cells with poly-Si on passivating interfacial oxides (POLO) junctions for both polarities, fabricated by a lean process flow. For this purpose, we evaluate p+ and n+ POLO junctions utilizing ~1.7 nm thin wet chemically grown (ozone diluted in di-ionized water) and ozone grown interfacial oxides on different surface morphologies. We achieve excellent passivation quality on damaged etched (100) surfaces with record low J0 values of 0.6 fA/cm2 (implied open circuit voltage Voc,impl 748 mV) for n+ POLO junctions and of 5 fA/cm2 (Voc,impl 729 mV) for p+ POLO junctions. However, on alkaline textured surfaces, ~6 times higher J0 values are obtained. We compare ex-situ-doped poly-Si (intrinsically deposited and subsequently ion implanted) with in-situ-doped poly-Si layers. For POLO junctions formed on textured surfaces by utilizing wet chemical oxides and low-pressure chemical vapor deposition (LP-CVD) of 20 nm in-situ n+-doped poly-Si, we obtain J0 values down to 2.4 fA/cm2. Also with plasma-enhanced chemical vapor deposition (PE-CVD) of in-situ-doped amorphous Si and subsequent crystallization, we obtain comparable results. A transparent conductive oxide (TCO), preferably temperature stable, seems to be required to support the limited lateral conductivity of POLO junctions with poly-Si layer thicknesses ≤ 20 nm. We find that the conductivity of indium tin oxide (ITO) strongly decreases upon firing, while the initial conductivity can be maintained even for firing temperatures of 800°C when capping the ITO with a thin SiNx layer. Our recent cell precursors (156 mm 156 mm Cz n-type wafers with an n+ POLO junction on an alkaline textured front-side and a p+ POLO junction on a damage-etched rear-side) exhibit a promising Voc,impl value of 732 mV, and a total J0 value of the doped surfaces of 12 fA/cm2. In combination with the high pseudo fill factor of 85.3 % and with a short-circuit current density of 40 mA/cm2 as calculated by ray tracing simulations, the corresponding pseudo efficiency is 25.0 %.
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J. Schmidt, D. Zielke, R. Gogolin, R. Sauer, and W. Lövenich Recent advances in polymer/silicon heterojunction solar cells Inproceedings WIP (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, Munich, Germany, (2016), ISBN: 3-936338-41-8. Abstract | Links | BibTeX | Schlagwörter: c-Si, heterojunction, Hybrid, passivation, Polymer Film, screen-printing, Stability @inproceedings{Schmidt2016,
title = {Recent advances in polymer/silicon heterojunction solar cells}, author = {J Schmidt and D Zielke and R Gogolin and R Sauer and W Lövenich}, editor = {WIP}, doi = {10.4229/EUPVSEC20162016-1CO.10.6}, isbn = {3-936338-41-8}, year = {2016}, date = {2016-09-01}, booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference}, address = {Munich, Germany}, abstract = {In this contribution, we first give a brief historical overview of the recent developments on polymer/silicon heterojunction cells. We then focus on our most recent results concerning: (i) the PEDOT:PSS/c-Si interface design, where the thickness of the native oxide in-between the c-Si surface and the polymer is shown to play a crucial role, (ii) a new type of heterojunction cell, where the hole-selective layer is PEDOT:PSS and the electronselective layer is well-passivating phosphorus-doped amorphous silicon (n-a-Si:H), (iii) the stability of the polymer/silicon cells in ambient environment. We demonstrate for the first time that the efficiencies of BackPEDOT cells are long-term stable if a metal foil is used as rear metallization scheme, as the metal foil does not transmit any humidity in contrast to evaporated metals. (iv) We present first results of our attempt to implement a PEDOT:PSS/c- Si junction into an industrial-type large-area (15.6×15.6 cm2) screen-printed c-Si solar cell and reach an efficiency of 19.5% in our first batch of cells. }, keywords = {c-Si, heterojunction, Hybrid, passivation, Polymer Film, screen-printing, Stability}, pubstate = {published}, tppubtype = {inproceedings} } In this contribution, we first give a brief historical overview of the recent developments on polymer/silicon heterojunction cells. We then focus on our most recent results concerning: (i) the PEDOT:PSS/c-Si interface design, where the thickness of the native oxide in-between the c-Si surface and the polymer is shown to play a crucial role, (ii) a new type of heterojunction cell, where the hole-selective layer is PEDOT:PSS and the electronselective layer is well-passivating phosphorus-doped amorphous silicon (n-a-Si:H), (iii) the stability of the polymer/silicon cells in ambient environment. We demonstrate for the first time that the efficiencies of BackPEDOT cells are long-term stable if a metal foil is used as rear metallization scheme, as the metal foil does not transmit any humidity in contrast to evaporated metals. (iv) We present first results of our attempt to implement a PEDOT:PSS/c- Si junction into an industrial-type large-area (15.6×15.6 cm2) screen-printed c-Si solar cell and reach an efficiency of 19.5% in our first batch of cells.
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B. Veith-Wolf, R. Witteck, A. Morlier, H. Schulte-Huxel, and J. Schmidt Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces Inproceedings IEEE (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 1173-1178, Portland, OR, USA, (2016), ISBN: 978-1-5090-2725-5. Abstract | Links | BibTeX | Schlagwörter: Aluminum oxide, Annealing, Carrier lifetime, crystalline silicon, Degradation, Firing, Glass, Lifetime estimation, Lighting, passivation, silicon nitride, surface passivation, UV stability @inproceedings{Veith-Wolf2016,
title = {Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces}, author = {B Veith-Wolf and R Witteck and A Morlier and H Schulte-Huxel and J Schmidt}, editor = {IEEE}, doi = {10.1109/PVSC.2016.7749799}, isbn = {978-1-5090-2725-5}, year = {2016}, date = {2016-06-01}, booktitle = {2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)}, journal = {Proceedings of the 43rd IEEE Photovoltaic Specialists Conference}, pages = {1173-1178}, address = {Portland, OR, USA}, abstract = {We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×10^13 cm-2.}, keywords = {Aluminum oxide, Annealing, Carrier lifetime, crystalline silicon, Degradation, Firing, Glass, Lifetime estimation, Lighting, passivation, silicon nitride, surface passivation, UV stability}, pubstate = {published}, tppubtype = {inproceedings} } We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×10^13 cm-2.
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2015 |
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D. Amkreutz, W. D. Barker, S. Kühnapfel, P. Sonntag, O. Gabriel, S. Gall, U. Bloeck, J. Schmidt, J. Haschke, and B. Rech IEEE Journal of Photovoltaics 5 (6), 1757-1761, (2015). Links | BibTeX | Schlagwörter: Crystallization, Glass, Liquid-phase crystallization (LPC), passivation, Photovoltaic cells, Photovoltaic systems, Polycrystalline silicon, silicon, surface passivation @article{bb,
title = {Liquid-phase crystallized silicon solar cells on glass: increasing the open-circuit voltage by optimized interlayers for n- and p-type absorbers}, author = {D Amkreutz and W D Barker and S Kühnapfel and P Sonntag and O Gabriel and S Gall and U Bloeck and J Schmidt and J Haschke and B Rech}, doi = {10.1109/JPHOTOV.2015.2466434}, year = {2015}, date = {2015-11-01}, journal = {IEEE Journal of Photovoltaics}, volume = {5}, number = {6}, pages = {1757-1761}, keywords = {Crystallization, Glass, Liquid-phase crystallization (LPC), passivation, Photovoltaic cells, Photovoltaic systems, Polycrystalline silicon, silicon, surface passivation}, pubstate = {published}, tppubtype = {article} } |
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S. Schäfer, D. Turkay, C. Gemmel, S. Kajari-Schröder, and R. Brendel Macroporous blind holes as surface texture for high efficiency silicon solar cells Inproceedings WIP (Hrsg.): Proceedings of the 31st European Photovoltaic Solar Energy Conference, 457-461, Hamburg, Germany, (2015), ISBN: 3-936338-39-6. Links | BibTeX | Schlagwörter: optical properties, passivation, Porous Silicon, Texturisation, Texturization @inproceedings{Schäfer2015,
title = {Macroporous blind holes as surface texture for high efficiency silicon solar cells}, author = {S Schäfer and D Turkay and C Gemmel and S Kajari-Schröder and R Brendel}, editor = {WIP}, doi = {10.4229/EUPVSEC20152015-2DO.2.1}, isbn = {3-936338-39-6}, year = {2015}, date = {2015-09-14}, booktitle = {Proceedings of the 31st European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 31st European Photovoltaic Solar Energy Conference}, pages = {457-461}, address = {Hamburg, Germany}, keywords = {optical properties, passivation, Porous Silicon, Texturisation, Texturization}, pubstate = {published}, tppubtype = {inproceedings} } |
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B. Veith-Wolf, J. Wang, M. Hannu-Kuure, N. Chen, A. Hadzic, P. Williams, J. Leivo, A. Karkkainen, and J. Schmidt Liquid-phase-deposited siloxane-based capping layers for silicon solar cells Artikel Applied Physics Letters 106 (5), 052104, (2015). Links | BibTeX | Schlagwörter: aluminium, passivation, silicon, Solar Cells, surface passivation @article{Veith-Wolf2015,
title = {Liquid-phase-deposited siloxane-based capping layers for silicon solar cells}, author = {B Veith-Wolf and J Wang and M Hannu-Kuure and N Chen and A Hadzic and P Williams and J Leivo and A Karkkainen and J Schmidt}, doi = {10.1063/1.4907533}, year = {2015}, date = {2015-02-01}, journal = {Applied Physics Letters}, volume = {106}, number = {5}, pages = {052104}, keywords = {aluminium, passivation, silicon, Solar Cells, surface passivation}, pubstate = {published}, tppubtype = {article} } |
2014 |
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U. Römer, R. Peibst, B. Lim, J. Krügener, E. Bugiel, T. Wietler, and R. Brendel Solar Energy Materials and Solar Cells 131 , 85-91, (2014), (SiliconPV 2014). Links | BibTeX | Schlagwörter: Passivated Contact, passivation, polysilicon, Silicon solar cell, Tunnel oxide @article{Römer2014b,
title = {Recombination behaviour and contact resistance of n+ and p+ polycrystalline Si/monocrystalline Si junctions*}, author = {U Römer and R Peibst and B Lim and J Krügener and E Bugiel and T Wietler and R Brendel}, doi = {10.1016/j.solmat.2014.06.003}, year = {2014}, date = {2014-12-01}, journal = {Solar Energy Materials and Solar Cells}, volume = {131}, pages = {85-91}, note = {SiliconPV 2014}, keywords = {Passivated Contact, passivation, polysilicon, Silicon solar cell, Tunnel oxide}, pubstate = {published}, tppubtype = {article} } |
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A. Merkle, R. Peibst, and R. Brendel High-efficient fully ion-implanted, co-annealed and laser-structured back junction back contacted solar cells Inproceedings WIP (Hrsg.): Proceedings of the 29th European Photovoltaic Solar Energy Conference, 954-958, Amsterdam, The Netherlands, (2014), ISBN: 3-936338-34-5. Links | BibTeX | Schlagwörter: back contact, laser processing, passivation @inproceedings{Merkle2014,
title = {High-efficient fully ion-implanted, co-annealed and laser-structured back junction back contacted solar cells}, author = {A Merkle and R Peibst and R Brendel}, editor = {WIP}, doi = {10.4229/EUPVSEC20142014-2AV.2.61}, isbn = {3-936338-34-5}, year = {2014}, date = {2014-09-01}, booktitle = {Proceedings of the 29th European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 29th European Photovoltaic Solar Energy Conference}, pages = {954-958}, address = {Amsterdam, The Netherlands}, keywords = {back contact, laser processing, passivation}, pubstate = {published}, tppubtype = {inproceedings} } |
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B. Veith-Wolf, J. Wang, M. Hannu-Kuure, N. Chen, A. Hadzic, P. Williams, J. Leivo, A. Karkkainen, and J. Schmidt Siloxane-based capping layers for Al2O3 as silicon nitride replacement in industrial-type PERC solar cells Inproceedings WIP (Hrsg.): Proceedings of the 29th European Photovoltaic Solar Energy Conference, 600-602, Amsterdam, The Netherlands, (2014), ISBN: 3-936338-34-5. Links | BibTeX | Schlagwörter: capping layer, liquid phase coating, passivation, PERC, Silicon Solar Cell(s) @inproceedings{Veith-Wolf2014,
title = {Siloxane-based capping layers for Al2O3 as silicon nitride replacement in industrial-type PERC solar cells}, author = {B Veith-Wolf and J Wang and M Hannu-Kuure and N Chen and A Hadzic and P Williams and J Leivo and A Karkkainen and J Schmidt}, editor = {WIP}, doi = {10.4229/EUPVSEC20142014-2DO.2.2}, isbn = {3-936338-34-5}, year = {2014}, date = {2014-09-01}, booktitle = {Proceedings of the 29th European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 29th European Photovoltaic Solar Energy Conference}, pages = {600-602}, address = {Amsterdam, The Netherlands}, keywords = {capping layer, liquid phase coating, passivation, PERC, Silicon Solar Cell(s)}, pubstate = {published}, tppubtype = {inproceedings} } |
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J. H. Petermann, H. Schulte-Huxel, V. Steckenreiter, S. Kajari-Schroder, and R. Brendel Principle of module-level processing demonstrated at single a-Si:H/c-Si heterojunction solar cells Artikel IEEE Journal of Photovoltaics 4 (4), 1018-1024, (2014). Links | BibTeX | Schlagwörter: Contact recombination velocity, Glass, heterojunction, Hybrid silicon, Indium tin oxide, laser-fired and bonding contacts (LFBCs), module-level processing, passivation, Photovoltaic cells, silicon, Silicon compounds, silicone, Substrates @article{Petermann2014,
title = {Principle of module-level processing demonstrated at single a-Si:H/c-Si heterojunction solar cells}, author = {J H Petermann and H Schulte-Huxel and V Steckenreiter and S Kajari-Schroder and R Brendel}, doi = {10.1109/JPHOTOV.2014.2314576}, year = {2014}, date = {2014-07-01}, journal = {IEEE Journal of Photovoltaics}, volume = {4}, number = {4}, pages = {1018-1024}, keywords = {Contact recombination velocity, Glass, heterojunction, Hybrid silicon, Indium tin oxide, laser-fired and bonding contacts (LFBCs), module-level processing, passivation, Photovoltaic cells, silicon, Silicon compounds, silicone, Substrates}, pubstate = {published}, tppubtype = {article} } |
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R. Peibst, U. Römer, Y. Larionova, H. Schulte-Huxel, T. Ohrdes, M. Häberle, B. Lim, J. Krügener, D. Stichtenoth, T. Wütherich, C. Schöllhorn, J. Graff, and R. Brendel Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions Inproceedings IEEE (Hrsg.): 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) , 0852-0856, Denver, CO, USA, (2014), ISBN: 978-1-4799-4398-2. Links | BibTeX | Schlagwörter: Back contact solar cells, Ion implantation, Junctions, metallization, module-level interconnection, passivation, Photovoltaic cell, Photovoltaic cells, Radiative recombination, silicon, solar energy @inproceedings{Peibst2014,
title = {Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions}, author = {R Peibst and U Römer and Y Larionova and H Schulte-Huxel and T Ohrdes and M Häberle and B Lim and J Krügener and D Stichtenoth and T Wütherich and C Schöllhorn and J Graff and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2014.6925049}, isbn = {978-1-4799-4398-2}, year = {2014}, date = {2014-06-08}, booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) }, journal = {Proceedings of the 40th IEEE Photovoltaic Specialists Conference}, pages = {0852-0856}, address = {Denver, CO, USA}, keywords = {Back contact solar cells, Ion implantation, Junctions, metallization, module-level interconnection, passivation, Photovoltaic cell, Photovoltaic cells, Radiative recombination, silicon, solar energy}, pubstate = {published}, tppubtype = {inproceedings} } |
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Y. Chen, P. P. Altermatt, J. Dong, S. Zhang, J. Liu, D. Chen, W. Deng, Y. Jiang, B. Liu, Wenming. Xiao, H. Zhu, H. Chen, Haijun. Jiao, X. Pan, M. Zhong, D. Wang, J. Sheng, Y. Zhang, H. Shen, Z. Feng, and P. J. Verlinden Al-alloyed local contacts for industrial PERC cells by local printing Inproceedings 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 3322-3325, (2014), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: Firing, metallization, Numerical models, passivation, PERC cell, Photovoltaic cells, Printing, Screen printing, silicon, voids @inproceedings{Chen2014b,
title = {Al-alloyed local contacts for industrial PERC cells by local printing}, author = {Y Chen and P P Altermatt and J Dong and S Zhang and J Liu and D Chen and W Deng and Y Jiang and B Liu and Wenming Xiao and H Zhu and H Chen and Haijun Jiao and X Pan and M Zhong and D Wang and J Sheng and Y Zhang and H Shen and Z Feng and P J Verlinden}, doi = {10.1109/PVSC.2014.6925645}, issn = {0160-8371}, year = {2014}, date = {2014-06-01}, booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)}, pages = {3322-3325}, keywords = {Firing, metallization, Numerical models, passivation, PERC cell, Photovoltaic cells, Printing, Screen printing, silicon, voids}, pubstate = {published}, tppubtype = {inproceedings} } |
2013 |
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R. Peibst, N. -P. Harder, A. Merkle, T. Neubert, S. Kirstein, J. Schmidt, F. Dross, P. Basore, and R. Brendel High-efficiency RISE-IBC solar cells: Influence of rear side passivation on pn-junction meander recombination Inproceedings WIP (Hrsg.): Proceedings of the 28th European Photovoltaic Solar Energy Conference, 971-975, Paris, France, (2013), ISBN: 3-936338-33-7. Links | BibTeX | Schlagwörter: Al2O3, back contact, High Efficiency, passivation, SiO @inproceedings{Peibst2013,
title = {High-efficiency RISE-IBC solar cells: Influence of rear side passivation on pn-junction meander recombination}, author = {R Peibst and N -P Harder and A Merkle and T Neubert and S Kirstein and J Schmidt and F Dross and P Basore and R Brendel}, editor = {WIP}, doi = {10.4229/28thEUPVSEC2013-2CO.4.1}, isbn = {3-936338-33-7}, year = {2013}, date = {2013-09-01}, booktitle = {Proceedings of the 28th European Photovoltaic Solar Energy Conference}, journal = {Proceedings of the 28th European Photovoltaic Solar Energy Conference}, pages = {971-975}, address = {Paris, France}, keywords = {Al2O3, back contact, High Efficiency, passivation, SiO}, pubstate = {published}, tppubtype = {inproceedings} } |
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F. Dross, A. Merkle, E. van Kerschaver, S. Baker-Finch, K. Cabanas-Holmen, R. Peibst, N. -P. Harder, R. Brendel, and P. A. Basore Analysis of RISE-IBC Solar Cells Inproceedings Proceedings of the 28th European Photovoltaic Solar Energy Conference, 1615-1617, Paris, France, (2013), ISBN: 3-936338-33-7. Links | BibTeX | Schlagwörter: Al2O3, back contact, High Efficiency, passivation, SiO @inproceedings{Dross2013,
title = {Analysis of RISE-IBC Solar Cells}, author = {F Dross and A Merkle and E van Kerschaver and S Baker-Finch and K Cabanas-Holmen and R Peibst and N -P Harder and R Brendel and P A Basore }, doi = {10.4229/28thEUPVSEC2013-2CV.3.48}, isbn = {3-936338-33-7}, year = {2013}, date = {2013-09-01}, booktitle = {Proceedings of the 28th European Photovoltaic Solar Energy Conference}, pages = {1615-1617}, address = {Paris, France}, keywords = {Al2O3, back contact, High Efficiency, passivation, SiO}, pubstate = {published}, tppubtype = {inproceedings} } |
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J. H. Petermann, H. Schulte-Huxel, V. Steckenreiter, R. Gogolin, S. Eidelloth, T. Dullweber, S. Kajari-Schröder, and R. Brendel Module interconnection of both sides-contacted silicon solar cells by screen-printing Inproceedings IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 3448-3453, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3. Links | BibTeX | Schlagwörter: Glass, heterojunction, Hybrid silicon, Integrated circuit interconnections, Lasers, module interconnection, module level processing, passivation, Photovoltaic cells, Resistance, screen-printing, silicon @inproceedings{Petermann2013,
title = {Module interconnection of both sides-contacted silicon solar cells by screen-printing}, author = {J H Petermann and H Schulte-Huxel and V Steckenreiter and R Gogolin and S Eidelloth and T Dullweber and S Kajari-Schröder and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2013.6745190}, isbn = {978-1-4799-3299-3}, year = {2013}, date = {2013-06-16}, booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) }, journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference}, pages = {3448-3453}, address = {Tampa, FL, USA}, keywords = {Glass, heterojunction, Hybrid silicon, Integrated circuit interconnections, Lasers, module interconnection, module level processing, passivation, Photovoltaic cells, Resistance, screen-printing, silicon}, pubstate = {published}, tppubtype = {inproceedings} } |