1.
D Zielke; R Gogolin; M -U Halbich; C Marquardt; W Lövenich; R Sauer; J Schmidt
Large-Area PEDOT:PSS/c-Si Heterojunction Solar Cells With Screen-Printed Metal Contacts Artikel
In: Solar RRL, Bd. 2, Nr. 3, S. 1700191, 2018, ISSN: 2367-198X.
@article{Zielke2018,
title = {Large-Area PEDOT:PSS/c-Si Heterojunction Solar Cells With Screen-Printed Metal Contacts},
author = {D Zielke and R Gogolin and M -U Halbich and C Marquardt and W Lövenich and R Sauer and J Schmidt},
doi = {10.1002/solr.201700191},
issn = {2367-198X},
year = {2018},
date = {2018-03-01},
journal = {Solar RRL},
volume = {2},
number = {3},
pages = {1700191},
abstract = {A large‐area BackPEDOT solar cell with a phosphorus‐diffused emitter and a high‐temperature‐fired screen‐printed Ag grid on the front surface and PEDOT:PSS as hole‐collecting and passivating layer at the cell rear is developed. As base material, 15.6 × 15.6 cm2 pseudo‐square industrial‐type boron‐doped p‐type Czochralski‐grown silicon wafers are used. The set‐peak firing temperature (Tset) is varied from 850 to 870 °C with a total number of 32 processed solar cells. The optimum Tset of 870 °C results in a median solar cell efficiency of 19.0%. The best large‐area BackPEDOT solar cell achieves an efficiency of 20.2%. Based on external quantum efficiency measurements, a rear surface recombination velocity Srear < 70 cm s−1 is determined, a value which is on a par with today's industrial high‐efficiency solar cells. Furthermore, a low‐temperature metal paste is introduced, which is shown to be capable of metalizing the PEDOT:PSS‐covered rear surface of the solar cells without damaging the rear surface passivation. The principle feasibility of such a rear metallization scheme is demonstrated. The parasitic absorption of infrared light within the PEDOT:PSS layer is identified as the major loss mechanism in the current cells, which might be overcome in the future by adding infrared‐transparent additives to the PEDOT:PSS dispersion.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
A large‐area BackPEDOT solar cell with a phosphorus‐diffused emitter and a high‐temperature‐fired screen‐printed Ag grid on the front surface and PEDOT:PSS as hole‐collecting and passivating layer at the cell rear is developed. As base material, 15.6 × 15.6 cm2 pseudo‐square industrial‐type boron‐doped p‐type Czochralski‐grown silicon wafers are used. The set‐peak firing temperature (Tset) is varied from 850 to 870 °C with a total number of 32 processed solar cells. The optimum Tset of 870 °C results in a median solar cell efficiency of 19.0%. The best large‐area BackPEDOT solar cell achieves an efficiency of 20.2%. Based on external quantum efficiency measurements, a rear surface recombination velocity Srear < 70 cm s−1 is determined, a value which is on a par with today's industrial high‐efficiency solar cells. Furthermore, a low‐temperature metal paste is introduced, which is shown to be capable of metalizing the PEDOT:PSS‐covered rear surface of the solar cells without damaging the rear surface passivation. The principle feasibility of such a rear metallization scheme is demonstrated. The parasitic absorption of infrared light within the PEDOT:PSS layer is identified as the major loss mechanism in the current cells, which might be overcome in the future by adding infrared‐transparent additives to the PEDOT:PSS dispersion.