@inproceedings{Wehmeier2017,

title = {Optimization and Application of a Single-Stage Co-Diffusion Process for Industrial n-Type Silicon Solar Cells},

author = {N Wehmeier and A Nowack and S Dorn and F Kiefer and T Brendemühl and S Kajari-Schröder},

editor = {WIP},

doi = {10.4229/EUPVSEC20172017-2AV.2.2},

isbn = {3-936338-47-7},

year  = {2017},

date = {2017-09-25},

booktitle = {Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition},

pages = {589-594},

address = {Amsterdam, The Netherlands},

abstract = {Industrial n-type silicon solar cells with high efficiencies usually require a complex fabrication process with two separate furnace diffusions. In this work, we aim for an optimized single-stage co-diffusion process for the simultaneous formation of the p+-emitter and the n+-front surface field (FSF) of industrial ntype rear emitter cells. A stack of boron silicate glass (BSG) and silicon nitride (SiNz) deposited by means of plasma-enhanced chemical vapor deposition (PECVD) acts as boron diffusion source. The co-diffusion is performed in a POCl3 quartz tube. At a single temperature plateau of only 850 °C, which is the lowest codiffusion temperature reported so far, the n+-region is diffused from POCl3 gas while simultaneously boron is driven-in from the BSG and forms the emitter. For tailoring the phosphorus doping profile, we integrate two in-situ oxidation steps into the co-diffusion process and investigate the influence of the oxidation times to achieve adequate phosphorus sheet resistances. With a first in-situ oxidation for 15 min and a second 60 min oxidation, we achieve phosphorus sheet resistances of Rsheet},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}