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1.

C Gemmel; J Hensen; S Kajari-Schröder; R Brendel

4.5 ms Effective Carrier Lifetime in Kerfless Epitaxial Silicon Wafers From the Porous Silicon Process Artikel

In: IEEE Journal of Photovoltaics, Bd. 7, Nr. 2, S. 430-436, 2017, ISSN: 2156-3381.

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2.

M R Vogt; H Schulte-Huxel; M Offer; S Blankemeyer; R Witteck; M Köntges; K Bothe; R Brendel

Reduced module operating temperature and increased yield of modules with PERC instead of Al-BSF solar cells Artikel

In: IEEE Journal of Photovoltaics, Bd. 7, Nr. 1, S. 44-50, 2017, ISSN: 2156-3381.

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3.

J Krügener; D Tetzlaff; Y Larionova; Y Barnscheidt; S Reiter; M Turcu; R Peibst; J -D Kähler; T Wietler

Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells Proceedings Article

In: IEEE, (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 2016, ISBN: 978-1-5090-2025-6.

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4.

J Krügener; Y Larionova; B Wolpensinger; D Tetzlaff; S Reiter; M Turcu; R Peibst; J -D Kähler; T Wietler

Dopant diffusion from p+-poly-Si into c-Si during thermal annealing Proceedings Article

In: IEEE, (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), S. 2451-2454, Portland, OR, USA, 2016, ISBN: 978-1-5090-2725-5.

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5.

J Krügener; R Peibst; F A Wolf; E Bugiel; T Ohrdes; F Kiefer; C Schöllhorn; A Grohe; R Brendel; H J Osten

Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters Artikel

In: IEEE Journal of Photovoltaics, Bd. 5, Nr. 1, S. 166-173, 2015.

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6.

J Müller; H Hannebauer; C Mader; F Haase; K Bothe

Dynamic infrared lifetime mapping for the measurement of the saturation current density of highly doped regions in silicon Artikel

In: IEEE Journal of Photovoltaics, Bd. 4, Nr. 2, S. 540-548, 2014.

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7.

C Mader; U Eitner; S Kajari-Schröder; R Brendel

Bow of Silicon Wafers After In-Line High-Rate Evaporation of Aluminum Artikel

In: IEEE Journal of Photovoltaics, Bd. 3, Nr. 1, S. 212-216, 2013.

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8.

J D Murphy; K Bothe; R Krain; V V Voronkov; R J Falster

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon, Artikel

In: Journal of Applied Physics, Bd. 111, Nr. 11, S. 113709, 2012.

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9.

H Wagner; A Dastgheib-Shirazi; R Chen; S T Dunham; M Kessler; P P Altermatt

Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer Proceedings Article

In: IEEE, (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, S. 002957-002962, Seattle, WA, USA, 2011, ISSN: 0160-8371.

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