1.
M Rienäcker; M Bossmeyer; A Merkle; U Römer; F Haase; J Krügener; R Brendel; R Peibst
In: IEEE Journal of Photovoltaics, Bd. 7, Nr. 1, S. 11-18, 2017, ISSN: 2156-3381.
@article{Rienäcker2017b,
title = {Junction resistivity of carrier-selective polysilicon on oxide junctions and its impact on solar cell performance},
author = {M Rienäcker and M Bossmeyer and A Merkle and U Römer and F Haase and J Krügener and R Brendel and R Peibst},
doi = {10.1109/JPHOTOV.2016.2614123},
issn = {2156-3381},
year = {2017},
date = {2017-01-01},
journal = {IEEE Journal of Photovoltaics},
volume = {7},
number = {1},
pages = {11-18},
abstract = {We investigate the junction resistivity of high-quality carrier-selective polysilicon on oxide (POLO) junctions with the transfer length method. We demonstrate n+ POLO junctions with a saturation current density JC,poly of 6.2 fA/cm2 and a junction resistivity ρc of 0.6 mΩcm2, counterdoped n+ POLO junctions with 2.7 fA/cm2 and 1.3 mΩcm2, and p+ POLO junctions with 6.7 fA/cm2 and 0.2 mΩcm2. Such low junction resistivities and saturation current densities correspond to excellent selectivities S10 of up to 16.2. The efficiency potential for back-junction back-contact solar cells with these POLO junctions was determined to be larger than 25 % by numerical device simulations. We demonstrate experimentally a back-junction back-contact solar cell with p-type and n-type POLO junctions with an independently confirmed efficiency of 24.25 %.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We investigate the junction resistivity of high-quality carrier-selective polysilicon on oxide (POLO) junctions with the transfer length method. We demonstrate n+ POLO junctions with a saturation current density JC,poly of 6.2 fA/cm2 and a junction resistivity ρc of 0.6 mΩcm2, counterdoped n+ POLO junctions with 2.7 fA/cm2 and 1.3 mΩcm2, and p+ POLO junctions with 6.7 fA/cm2 and 0.2 mΩcm2. Such low junction resistivities and saturation current densities correspond to excellent selectivities S10 of up to 16.2. The efficiency potential for back-junction back-contact solar cells with these POLO junctions was determined to be larger than 25 % by numerical device simulations. We demonstrate experimentally a back-junction back-contact solar cell with p-type and n-type POLO junctions with an independently confirmed efficiency of 24.25 %.
2.
R Brendel; R Peibst
Contact selectivity and efficiency in crystalline silicon photovoltaics Artikel
In: IEEE Journal of Photovoltaics, Bd. 6, Nr. 6, S. 1413-1420, 2016.
@article{Brendel2016b,
title = {Contact selectivity and efficiency in crystalline silicon photovoltaics},
author = {R Brendel and R Peibst},
doi = {10.1109/JPHOTOV.2016.2598267},
year = {2016},
date = {2016-11-01},
journal = {IEEE Journal of Photovoltaics},
volume = {6},
number = {6},
pages = {1413-1420},
abstract = {Highly doped junctions of a Si solar cell function as membranes that block minority carriers and, at the same time, provide a high conductivity for transporting majority carriers to the contacts. They are thus said to be selective contacts. We propose a quantitative definition for the selectivity of contacts. The selectivity provides a figure of merit for electron and hole contacts that is helpful in designing solar cells and in identifying the efficiency limiting components. Applying the definition of selectivity to poly-Si junctions reveals that the root cause of their high selectivity is the highly asymmetric carrier concentration rather than a specific contact geometry.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Highly doped junctions of a Si solar cell function as membranes that block minority carriers and, at the same time, provide a high conductivity for transporting majority carriers to the contacts. They are thus said to be selective contacts. We propose a quantitative definition for the selectivity of contacts. The selectivity provides a figure of merit for electron and hole contacts that is helpful in designing solar cells and in identifying the efficiency limiting components. Applying the definition of selectivity to poly-Si junctions reveals that the root cause of their high selectivity is the highly asymmetric carrier concentration rather than a specific contact geometry.
3.
J Krügener; D Tetzlaff; Y Larionova; Y Barnscheidt; S Reiter; M Turcu; R Peibst; J -D Kähler; T Wietler
Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells Proceedings Article
In: IEEE, (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 2016, ISBN: 978-1-5090-2025-6.
@inproceedings{Krügener2016,
title = {Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells},
author = {J Krügener and D Tetzlaff and Y Larionova and Y Barnscheidt and S Reiter and M Turcu and R Peibst and J -D Kähler and T Wietler},
editor = {IEEE},
doi = {10.1109/IIT.2016.7882868},
isbn = {978-1-5090-2025-6},
year = {2016},
date = {2016-09-23},
booktitle = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)},
journal = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)},
address = {Tainan, Taiwan},
abstract = {Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical investigations of in situ boron-doped (deposited by low pressure chemical vapor deposition) and ion-implanted (intrinsically deposited and subsequently ion-implanted with boron) p+-poly-Si/SiOx/c-Si stacks after annealing. We find electrical deactivation of boron after annealing which strongly depends on the total boron concentration and the subsequent annealing temperature.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical investigations of in situ boron-doped (deposited by low pressure chemical vapor deposition) and ion-implanted (intrinsically deposited and subsequently ion-implanted with boron) p+-poly-Si/SiOx/c-Si stacks after annealing. We find electrical deactivation of boron after annealing which strongly depends on the total boron concentration and the subsequent annealing temperature.
4.
D Tetzlaff; J Krügener; Y Larionova; S Reiter; M Turcu; R Peibst; U Höhne; J -D Kähler; T Wietler
Evolution of oxide disruptions: The (w)hole story about passivating contacts Proceedings Article
In: IEEE, (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), S. 0221-0224, Portland, OR, USA, 2016, ISBN: 978-1-5090-2725-5.
@inproceedings{Tetzlaff2016,
title = {Evolution of oxide disruptions: The (w)hole story about passivating contacts},
author = {D Tetzlaff and J Krügener and Y Larionova and S Reiter and M Turcu and R Peibst and U Höhne and J -D Kähler and T Wietler},
editor = {IEEE},
doi = {10.1109/PVSC.2016.7749582},
isbn = {978-1-5090-2725-5},
year = {2016},
date = {2016-06-01},
booktitle = {2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)},
journal = {Proceedings of the 43rd IEEE Photovoltaic Specialists Conference},
pages = {0221-0224},
address = {Portland, OR, USA},
abstract = {Different models exist describing the current transport in polycrystalline Si/SiOx/crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiOx/crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
Different models exist describing the current transport in polycrystalline Si/SiOx/crystalline Si junctions. Besides tunneling through thin oxides, transport through pinholes is discussed. We investigate the influence of annealing temperature on the structural properties of polycrystalline Si/SiOx/crystalline Si interfaces and analyze the formation and evolution of holes by high resolution transmission electron microscopy in comparison to electrical results. We prove the existence of pinholes in samples with good electrical properties in agreement with the pinhole model.
5.
J Krügener; Y Larionova; B Wolpensinger; D Tetzlaff; S Reiter; M Turcu; R Peibst; J -D Kähler; T Wietler
Dopant diffusion from p+-poly-Si into c-Si during thermal annealing Proceedings Article
In: IEEE, (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), S. 2451-2454, Portland, OR, USA, 2016, ISBN: 978-1-5090-2725-5.
@inproceedings{Krügener2016bc,
title = {Dopant diffusion from p+-poly-Si into c-Si during thermal annealing},
author = {J Krügener and Y Larionova and B Wolpensinger and D Tetzlaff and S Reiter and M Turcu and R Peibst and J -D Kähler and T Wietler},
editor = {IEEE},
doi = {10.1109/PVSC.2016.7750083},
isbn = {978-1-5090-2725-5},
year = {2016},
date = {2016-06-01},
booktitle = {2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)},
journal = {Proceedings of the 43rd IEEE Photovoltaic Specialists Conference},
pages = {2451-2454},
address = {Portland, OR, USA},
abstract = {Passivating junctions, like hole-collecting p-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm2 for in situ p+ doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in-diffused region within the substrate are electrically connected.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
Passivating junctions, like hole-collecting p-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm2 for in situ p+ doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in-diffused region within the substrate are electrically connected.
6.
U Römer; R Peibst; T Ohrdes; B Lim; J Krügener; T Wietler; R Brendel
Ion implantation for poly-Si passivated back-junction back-contacted solar cells Artikel
In: IEEE Journal of Photovoltaics, Bd. 5, Nr. 2, S. 507-514, 2015.
@article{Römer2015,
title = {Ion implantation for poly-Si passivated back-junction back-contacted solar cells},
author = {U Römer and R Peibst and T Ohrdes and B Lim and J Krügener and T Wietler and R Brendel},
doi = {10.1109/JPHOTOV.2014.2382975},
year = {2015},
date = {2015-03-01},
journal = {IEEE Journal of Photovoltaics},
volume = {5},
number = {2},
pages = {507-514},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
7.
R Peibst; U Römer; Y Larionova; H Schulte-Huxel; T Ohrdes; M Häberle; B Lim; J Krügener; D Stichtenoth; T Wütherich; C Schöllhorn; J Graff; R Brendel
Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions Proceedings Article
In: IEEE, (Hrsg.): 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), S. 0852-0856, Denver, CO, USA, 2014, ISBN: 978-1-4799-4398-2.
@inproceedings{Peibst2014,
title = {Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions},
author = {R Peibst and U Römer and Y Larionova and H Schulte-Huxel and T Ohrdes and M Häberle and B Lim and J Krügener and D Stichtenoth and T Wütherich and C Schöllhorn and J Graff and R Brendel},
editor = {IEEE},
doi = {10.1109/PVSC.2014.6925049},
isbn = {978-1-4799-4398-2},
year = {2014},
date = {2014-06-08},
booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)},
journal = {Proceedings of the 40th IEEE Photovoltaic Specialists Conference},
pages = {0852-0856},
address = {Denver, CO, USA},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
8.
R Peibst; U Römer; K R Hofmann; B Lim; T F Wietler; J Krügener; N -P Harder; R Brendel
In: IEEE Journal of Photovoltaics, Bd. 4, Nr. 3, S. 841-850, 2014.
@article{Peibst2014b,
title = {A simple model describing the symmetric IV characteristics of p polycrystalline Si/n monocrystalline Si and n polycrystalline Si/p monocrystalline Si junctions},
author = {R Peibst and U Römer and K R Hofmann and B Lim and T F Wietler and J Krügener and N -P Harder and R Brendel},
doi = {10.1109/JPHOTOV.2014.2310740},
year = {2014},
date = {2014-05-01},
journal = {IEEE Journal of Photovoltaics},
volume = {4},
number = {3},
pages = {841-850},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
9.
D Hinken; A Milsted; R Bock; B Fischer; K Bothe; M Schutze; J Isenberg; A Schulze; M Wagner
Determination of the Base-Dopant Concentration of Large-Area Crystalline Silicon Solar Cells Artikel
In: IEEE Transactions on Electron Devices, Bd. 57, Nr. 11, S. 2831-2837, 2010, ISSN: 0018-9383.
@article{Hinken2010,
title = {Determination of the Base-Dopant Concentration of Large-Area Crystalline Silicon Solar Cells},
author = {D Hinken and A Milsted and R Bock and B Fischer and K Bothe and M Schutze and J Isenberg and A Schulze and M Wagner},
doi = {10.1109/TED.2010.2064777},
issn = {0018-9383},
year = {2010},
date = {2010-11-01},
journal = {IEEE Transactions on Electron Devices},
volume = {57},
number = {11},
pages = {2831-2837},
keywords = {},
pubstate = {published},
tppubtype = {article}
}