1.
M Stöhr; J Aprojanz; R Brendel; T Dullweber
Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells Artikel
In: ACS Applied Energy Materials, Bd. 4, Nr. 5, S. 4646–4653, 2021.
@article{Stöhr2021,
title = {Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells},
author = {M Stöhr and J Aprojanz and R Brendel and T Dullweber},
doi = {10.1021/acsaem.1c00265},
year = {2021},
date = {2021-05-24},
journal = {ACS Applied Energy Materials},
volume = {4},
number = {5},
pages = {4646–4653},
publisher = {American Chemical Society},
abstract = {Passivating contacts based on SiOx/poly-Si exhibit excellent contact and surface passivation properties enabling very high solar cell conversion efficiencies. In this paper, we investigate and optimize the plasma-enhanced chemical vapor deposition (PECVD) of SiOxNy/n-a-Si stacks, their subsequent annealing to SiOxNy/n-poly-Si stacks followed by PECVD SiNx deposition and firing. We eliminate blistering of the poly-Si layer by enabling a controlled hydrogen out-diffusion during the annealing step. Whereas the J0 of thermal SiOx/n-poly-Si stacks degrade after firing, PECVD SiOxNy/n-poly-Si stacks exhibit excellent firing stability enabling J0 values down to 1.3 fA/cm2 after firing which corresponds to an outstanding implied VOC of 744 mV. The application of different hydrogenation processes to the thermal SiOx/n-poly-Si and PECVD SiOxNy/n-poly-Si stacks reveals that both stacks achieve excellent passivation properties with J0 = 1.5 fA/cm2 after maximum hydrogenation. However, only the PECVD SiOxNy/n-poly-Si stack maintains this excellent surface passivation after firing possibly due to a superior capability to retain the hydrogen at the c-Si/SiOxNy interface during firing and thus demonstrates the potential as a future manufacturing process sequence.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Passivating contacts based on SiOx/poly-Si exhibit excellent contact and surface passivation properties enabling very high solar cell conversion efficiencies. In this paper, we investigate and optimize the plasma-enhanced chemical vapor deposition (PECVD) of SiOxNy/n-a-Si stacks, their subsequent annealing to SiOxNy/n-poly-Si stacks followed by PECVD SiNx deposition and firing. We eliminate blistering of the poly-Si layer by enabling a controlled hydrogen out-diffusion during the annealing step. Whereas the J0 of thermal SiOx/n-poly-Si stacks degrade after firing, PECVD SiOxNy/n-poly-Si stacks exhibit excellent firing stability enabling J0 values down to 1.3 fA/cm2 after firing which corresponds to an outstanding implied VOC of 744 mV. The application of different hydrogenation processes to the thermal SiOx/n-poly-Si and PECVD SiOxNy/n-poly-Si stacks reveals that both stacks achieve excellent passivation properties with J0 = 1.5 fA/cm2 after maximum hydrogenation. However, only the PECVD SiOxNy/n-poly-Si stack maintains this excellent surface passivation after firing possibly due to a superior capability to retain the hydrogen at the c-Si/SiOxNy interface during firing and thus demonstrates the potential as a future manufacturing process sequence.
2.
J Bullock; A Thomson; A Cuevas; B Veith; J Schmidt; A Karkkainen
In: physica status solidi (RRL) – Rapid Research Letters, Bd. 7, Nr. 8, S. 530-533, 2013.
@article{Bullock2013,
title = {Enhanced rear-side reflection and firing-stable surface passivation of silicon solar cells with capping polymer films},
author = {J Bullock and A Thomson and A Cuevas and B Veith and J Schmidt and A Karkkainen},
doi = {10.1002/pssr.201307200},
year = {2013},
date = {2013-08-01},
journal = {physica status solidi (RRL) – Rapid Research Letters},
volume = {7},
number = {8},
pages = {530-533},
keywords = {},
pubstate = {published},
tppubtype = {article}
}