1.
H Schulte-Huxel; F Kiefer; S Blankemeyer; R Witteck; M Vogt; M Köntges; Rolf; Brendel; J Krügener; R Peibst
Flip-flop cell interconnection enabled by an extremely high bifaciality of screen-printed ion-implanted n-PERT Si solar cells Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, S. 407-412, Munich, Germany, 2016, ISBN: 3-936338-41-8.
@inproceedings{Schulte-Huxel2016b,
title = {Flip-flop cell interconnection enabled by an extremely high bifaciality of screen-printed ion-implanted n-PERT Si solar cells},
author = {H Schulte-Huxel and F Kiefer and S Blankemeyer and R Witteck and M Vogt and M Köntges and Rolf and Brendel and J Krügener and R Peibst},
editor = {WIP},
doi = {10.4229/EUPVSEC20162016-2CO.2.3},
isbn = {3-936338-41-8},
year = {2016},
date = {2016-09-01},
booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
pages = {407-412},
address = {Munich, Germany},
abstract = {We present bifacial fully ion implanted and screen-printed n-PERT cells, fabricated either by applying a single co-anneal process to cure the implant damage or by applying two separate anneals after boron/BF2 and phosphorous implant, respectively. In the first case of boron implant and co-anneal our best cells achieve an independently measured front (rear) side efficiency of 21.0 % (20.43 %) and for the boron implant and separate anneal the efficiency is 21.5 % (21.31 %). To the best of our knowledge these values are the highest efficiencies reported so far for fully ion implanted and screen-printed bifacial n-PERT cells. We furthermore show that light treatment of boron-implanted and co-annealed n-PERT cells increases the cell efficiency by 0.6 %abs. This diminish the efficiency gap to separately annealed cells. We measure a bifacial factor of 99.4 % that is the highest value reported so far for any high-efficiency Si cell. The high bifaciality enables an adapted module interconnection scheme called here Flip-Flop, which is based on a front-to-front and rear-to-rear interconnection of cells with alternating orientation (n+ or p+ side facing up). Based on the measured IV-characteristic of a cell with a bifacial factor of 97 % (“conservative scenario”) we demonstrate that the Flip-Flop interconnection scheme has the potential for a module efficiency improvement of 0.5 %abs on aperture area (as compared to the conventional “all cells emitter up” configuration) despite the 3 % current mismatch. We experimentally demonstrate a monofacial 16-cell Flip-Flop module that achieves an aperture area efficiency of 20.5 %.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We present bifacial fully ion implanted and screen-printed n-PERT cells, fabricated either by applying a single co-anneal process to cure the implant damage or by applying two separate anneals after boron/BF2 and phosphorous implant, respectively. In the first case of boron implant and co-anneal our best cells achieve an independently measured front (rear) side efficiency of 21.0 % (20.43 %) and for the boron implant and separate anneal the efficiency is 21.5 % (21.31 %). To the best of our knowledge these values are the highest efficiencies reported so far for fully ion implanted and screen-printed bifacial n-PERT cells. We furthermore show that light treatment of boron-implanted and co-annealed n-PERT cells increases the cell efficiency by 0.6 %abs. This diminish the efficiency gap to separately annealed cells. We measure a bifacial factor of 99.4 % that is the highest value reported so far for any high-efficiency Si cell. The high bifaciality enables an adapted module interconnection scheme called here Flip-Flop, which is based on a front-to-front and rear-to-rear interconnection of cells with alternating orientation (n+ or p+ side facing up). Based on the measured IV-characteristic of a cell with a bifacial factor of 97 % (“conservative scenario”) we demonstrate that the Flip-Flop interconnection scheme has the potential for a module efficiency improvement of 0.5 %abs on aperture area (as compared to the conventional “all cells emitter up” configuration) despite the 3 % current mismatch. We experimentally demonstrate a monofacial 16-cell Flip-Flop module that achieves an aperture area efficiency of 20.5 %.