1.
V Mertens; S Dorn; J Langlois; M Stöhr; Y Larionova; W Veurman; R Brendel; N Ambrosius; A Vogt; T Pernau; H Haverkamp; T Dullweber
Plasma enhanced chemical vapor-deposited SiOx(Ny)/n-type polysilicon on oxide passivating contacts in industrial back-contacted Si solar cells Artikel Geplante Veröffentlichung
In: Solar RRL, Geplante Veröffentlichung.
@article{Mertens2024,
title = {Plasma enhanced chemical vapor-deposited SiOx(Ny)/n-type polysilicon on oxide passivating contacts in industrial back-contacted Si solar cells},
author = {V Mertens and S Dorn and J Langlois and M Stöhr and Y Larionova and W Veurman and R Brendel and N Ambrosius and A Vogt and T Pernau and H Haverkamp and T Dullweber},
doi = {10.1002/solr.202300919},
year = {2024},
date = {2024-01-29},
journal = {Solar RRL},
abstract = {In this paper we investigate different in situ grown Plasma Enhanced Chemical Vapor Deposition (PECVD) grown interfacial oxides for n-type polysilicon passivating contacts. We apply SiOx(Ny)/n-type amorphous silicon stacks created from either N2O plasma or O2 plasma to POLO IBC solar cells using our structured deposition process through a glass mask to create the IBC layout. We determine experimentally the impact of plasma exposure time for interfacial oxide growth on solar cell efficiencies. The POLO IBC cell results show that the PECVD oxides SiOxNy and SiOx with optimized plasma exposure time give similar maximum efficiencies of 23.8 % and 23.7 %, respectively. These data demonstrate the feasibility to deposit a high-quality in situ PECVD interfacial SiOx(Ny) layers for surface passivation and current transport of passivated contacts at the same time. For the SiOx/n-type polysilicon stack we find that both, plasma exposure time for interfacial oxide growth or polysilicon anneal temperature variations, can lead to similar optimum of solar cell efficiencies. We analyze the current Voc losses due to metallization for our solar cells and calculate a realistic to achieve efficiency of 25.22 % for an optimized POLO IBC solar cells applying the Synergistic Efficiency Gain Analysis (SEGA) on Quokka3 simulations. This article is protected by copyright. All rights reserved.},
keywords = {},
pubstate = {forthcoming},
tppubtype = {article}
}
In this paper we investigate different in situ grown Plasma Enhanced Chemical Vapor Deposition (PECVD) grown interfacial oxides for n-type polysilicon passivating contacts. We apply SiOx(Ny)/n-type amorphous silicon stacks created from either N2O plasma or O2 plasma to POLO IBC solar cells using our structured deposition process through a glass mask to create the IBC layout. We determine experimentally the impact of plasma exposure time for interfacial oxide growth on solar cell efficiencies. The POLO IBC cell results show that the PECVD oxides SiOxNy and SiOx with optimized plasma exposure time give similar maximum efficiencies of 23.8 % and 23.7 %, respectively. These data demonstrate the feasibility to deposit a high-quality in situ PECVD interfacial SiOx(Ny) layers for surface passivation and current transport of passivated contacts at the same time. For the SiOx/n-type polysilicon stack we find that both, plasma exposure time for interfacial oxide growth or polysilicon anneal temperature variations, can lead to similar optimum of solar cell efficiencies. We analyze the current Voc losses due to metallization for our solar cells and calculate a realistic to achieve efficiency of 25.22 % for an optimized POLO IBC solar cells applying the Synergistic Efficiency Gain Analysis (SEGA) on Quokka3 simulations. This article is protected by copyright. All rights reserved.
2.
N Wehmeier; S Kajari-Schröder; T Brendemühl; A Nowack; R Brendel; T Dullweber
Industrial n-type bifacial co-diffused rear emitter solar cells with boron silicate glass as diffusion source and passivation Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, S. 443-446, Munich, Germany, 2016, ISBN: 3-936338-41-8.
@inproceedings{Wehmeier2016,
title = {Industrial n-type bifacial co-diffused rear emitter solar cells with boron silicate glass as diffusion source and passivation},
author = {N Wehmeier and S Kajari-Schröder and T Brendemühl and A Nowack and R Brendel and T Dullweber},
editor = {WIP},
doi = {10.4229/EUPVSEC20162016-2CO.3.6},
isbn = {3-936338-41-8},
year = {2016},
date = {2016-09-01},
booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
pages = {443-446},
address = {Munich, Germany},
abstract = {We fabricate n-type rear emitter cells with a boron silicate glass (BSG) layer deposited by means of plasma-enhanced chemical vapor deposition (PECVD). The multi-functional stack consisting of the BSG layer and a PECVD silicon nitride (SiNz) capping layer acts both as a boron diffusion source and as the rear side passivation achieving saturation current densities of J0=40 fA/cm². For solar cell fabrication, the rear emitter is diffused from the BSG/SiNz stack while the front surface field (FSF) is diffused from POCl3 gas in a co-diffusion process. We present a novel n+ n p+ solar cell concept and name it BiCoRE (Bifacial Co-diffused Rear Emitter) cell that applies a screen-printed Al grid on the rear side for bifaciality. The process flow and complexity of the BiCoRE cells are very similar to industrial Passivated Emitter and Rear Cells (PERC). The BiCoRE cells processed on the very first batch demonstrate conversion efficiencies up to h=20.6% when illuminated from the front side, up to 16.1% rear-side efficiency and a bifaciality of 78%.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We fabricate n-type rear emitter cells with a boron silicate glass (BSG) layer deposited by means of plasma-enhanced chemical vapor deposition (PECVD). The multi-functional stack consisting of the BSG layer and a PECVD silicon nitride (SiNz) capping layer acts both as a boron diffusion source and as the rear side passivation achieving saturation current densities of J0=40 fA/cm². For solar cell fabrication, the rear emitter is diffused from the BSG/SiNz stack while the front surface field (FSF) is diffused from POCl3 gas in a co-diffusion process. We present a novel n+ n p+ solar cell concept and name it BiCoRE (Bifacial Co-diffused Rear Emitter) cell that applies a screen-printed Al grid on the rear side for bifaciality. The process flow and complexity of the BiCoRE cells are very similar to industrial Passivated Emitter and Rear Cells (PERC). The BiCoRE cells processed on the very first batch demonstrate conversion efficiencies up to h=20.6% when illuminated from the front side, up to 16.1% rear-side efficiency and a bifaciality of 78%.
3.
N Wehmeier; G Schraps; H Wagner; B Lim; N -P Harder; P P Altermatt
Boron-doped PECVD silicon oxides as diffusion sources for simplified high-efficiency solar cell fabrication Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 28th European Photovoltaic Solar Energy Conference, S. 1980-1984, Paris, France, 2013, ISBN: 3-936338-33-7.
@inproceedings{Wehmeier2013,
title = {Boron-doped PECVD silicon oxides as diffusion sources for simplified high-efficiency solar cell fabrication},
author = {N Wehmeier and G Schraps and H Wagner and B Lim and N -P Harder and P P Altermatt},
editor = {WIP},
doi = {10.4229/28thEUPVSEC2013-2DV.3.52},
isbn = {3-936338-33-7},
year = {2013},
date = {2013-09-01},
booktitle = {Proceedings of the 28th European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 28th European Photovoltaic Solar Energy Conference},
pages = {1980-1984},
address = {Paris, France},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
4.
R Ferré; T Pernau; F Schwarz; T Baier; S Nölker; B Huth; S Rommel; M Okanovic; G Gläser; T Neubert; T Dullweber
Recombination and contact properties in metallized rear side regions of PERC cells Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 28th European Photovoltaic Solar Energy Conference, S. 1236-1241, Paris, France, 2013, ISBN: 3-936338-33-7.
@inproceedings{Ferré2013,
title = {Recombination and contact properties in metallized rear side regions of PERC cells},
author = {R Ferré and T Pernau and F Schwarz and T Baier and S Nölker and B Huth and S Rommel and M Okanovic and G Gläser and T Neubert and T Dullweber},
editor = {WIP},
doi = {10.4229/28thEUPVSEC2013-2BV.2.8},
isbn = {3-936338-33-7},
year = {2013},
date = {2013-09-01},
booktitle = {Proceedings of the 28th European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 28th European Photovoltaic Solar Energy Conference},
pages = {1236-1241},
address = {Paris, France},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
5.
B F P Roos; T Dippell; O Hohn; P Wohlfart; B Beier; B Veith-Wolf; M Siebert; T Dullweber
ICP-PECVD production tool for industrial AlOx and Si-based passivation layers Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 27th European Photovoltaic Solar Energy Conference, S. 1684-1687, Frankfurt, Germany, 2012, ISBN: 3-936338-28-0.
@inproceedings{Roos2012,
title = {ICP-PECVD production tool for industrial AlOx and Si-based passivation layers},
author = {B F P Roos and T Dippell and O Hohn and P Wohlfart and B Beier and B Veith-Wolf and M Siebert and T Dullweber},
editor = {WIP},
doi = {10.4229/27thEUPVSEC2012-2CV.5.17},
isbn = {3-936338-28-0},
year = {2012},
date = {2012-09-01},
booktitle = {Proceedings of the 27th European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 27th European Photovoltaic Solar Energy Conference},
pages = {1684-1687},
address = {Frankfurt, Germany},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}