@inproceedings{Larionova2016,
title = {Optimization of p+ poly-Si/c-Si junctions on wet-chemically grown interfacial oxides and on different wafer morphologies},
author = {Y Larionova and R Peibst and M Turcu and S Reiter and R Brendel and D Tetzlaff and J Krügener and T Wietler and U Höhne and J -D Kähler},
editor = {WIP},
doi = {10.4229/EUPVSEC20162016-2CO.4.3},
isbn = {3-936338-41-8},
year = {2016},
date = {2016-09-01},
booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
pages = {452-455},
address = {Munich, Germany},
abstract = {In this paper, we study the passivation quality of p-type poly-Si / c-Si junctions annealed at different temperatures. We evaluate wet-chemically grown (ozonized in DI-H2O) and thermally-grown interfacial oxides and compare boron ion implantation into intrinsic poly-Si with different doses to in situ p+ doping during the LPCVD Si deposition process. The experimental results show that decreasing the doping concentration of the p+ poly-Si layer and increasing the annealing temperature improve the passivation quality of the p+ poly-Si / c-Si junctions. Additionally, we explore the passivation quality of p-type poly-Si / c-Si junctions on different surface morphologies and orientations, i.e. on planar (100) and (111) as well as alkaline textured Si surfaces. Textured surfaces show a strongly increased J0e, possibly due to a worse p-type poly-Si passivation on (111) surfaces. The emitter saturation current density J0e of 8 fA/cm² achieved on planar (100) surfaces is the lowest value reported for p+ poly-Si / c-Si junctions with wet-chemically grown oxides so far.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}