1.
V Steckenreiter; J Hensen; A Knorr; S Kajari-Schröder; R Brendel
Reuse of substrate wafers for the porous silicon layer transfer Artikel
In: IEEE Journal of Photovoltaics, Bd. 6, Nr. 3, S. 783-790, 2016.
@article{Steckenreiter2016b,
title = {Reuse of substrate wafers for the porous silicon layer transfer},
author = {V Steckenreiter and J Hensen and A Knorr and S Kajari-Schröder and R Brendel},
doi = {10.1109/JPHOTOV.2016.2545406},
year = {2016},
date = {2016-05-01},
journal = {IEEE Journal of Photovoltaics},
volume = {6},
number = {3},
pages = {783-790},
abstract = {The reuse of the silicon substrate is a key component in the kerfless-porous-silicon-based wafering process. Starting with a boron-doped p+-type substrate, a porous double layer is created, reorganized in a hydrogen bake, and then serves as a substrate for silicon homoepitaxy. After lift-off, the silicon substrate is wet chemically reconditioned and reporosified to serve again as a substrate for epitaxial layer deposition. We reduce the substrate consumption per cycle to 5 ± 0.3 μm/side and demonstrate 14 uses on a 6-in wafer. We investigate the impact of the reuse sequence on the epitaxial layer quality by carrier lifetime measurements. Starting with the third reuse, a pattern becomes visible in lifetime mappings. We observe a degradation of the minority carrier lifetime from 15 to 7 μs after 13 reuses.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The reuse of the silicon substrate is a key component in the kerfless-porous-silicon-based wafering process. Starting with a boron-doped p+-type substrate, a porous double layer is created, reorganized in a hydrogen bake, and then serves as a substrate for silicon homoepitaxy. After lift-off, the silicon substrate is wet chemically reconditioned and reporosified to serve again as a substrate for epitaxial layer deposition. We reduce the substrate consumption per cycle to 5 ± 0.3 μm/side and demonstrate 14 uses on a 6-in wafer. We investigate the impact of the reuse sequence on the epitaxial layer quality by carrier lifetime measurements. Starting with the third reuse, a pattern becomes visible in lifetime mappings. We observe a degradation of the minority carrier lifetime from 15 to 7 μs after 13 reuses.