@article{Green2024b,

title = {Solar cell efficiency tables (Version 64)},

author = {M A Green and E D Dunlop and M Yoshita and N Kopidakis and K Bothe and G Siefer and D Hinken and M Rauer and J Hohl-Ebinger and X Hao},

doi = {10.1002/pip.3831},

year  = {2024},

date = {2024-07-02},

urldate = {2024-01-01},

journal = {Progress in Photovoltaics: Research and Applications},

volume = {32},

number = {7},

pages = {425-441},

abstract = {Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since January 2024 are reviewed.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Keuler2024,

title = {Evaluation of thermal comfort during showering with system-related temperature fluctuations},

author = {J Keuler and K Albrecht and P Pärisch},

doi = {10.1016/j.jobe.2024.109162},

issn = {2352-7102},

year  = {2024},

date = {2024-07-01},

urldate = {2024-01-01},

journal = {Journal of Building Engineering},

volume = {88},

pages = {109162},

abstract = {With the decarbonization of heating sector with temperature-sensitive heat pump, comfort must be considered. For users, comfort is a decisive criterion that can hinder the decision for a supply system using renewable energies. Instantaneous domestic hot water heater pose a particular challenge here, as load changes can easily lead to temperature fluctuations. Therefore, the following study aims to determine the perception of temperature fluctuations during showering and to classify them for an assessment procedure. For this purpose, we carried out tests with 120 persons in a controlled environment. The test subjects showered at their desired temperature and gave direct feedback on imposed temperature fluctuations. Positive and negative changes with different rates of change were examined. We reported clear individual differences in the set desired temperatures as well as in the noticed and tolerated temperature fluctuations. The average desired temperature was 38.5 °C, with a quite large variation of ±5.5 K. While 2 % of the test subjects already noticed fluctuations <0.5 K and found them uncomfortable, for others (≈40 %) deviations of 4 K were still comfortable. Therefore, the resulting evaluation was based on a proportion of dissatisfied subjects according to the procedure described by the ISO 7730. This study represents a first step towards the introduction of standardized assessment of instantaneous water heaters and the comfort criteria would allow a comparison of control quality for different applications.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Min2024b,

title = {24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial-scale direct plasma-enhanced chemical vapor deposition system},

author = {B Min and V Mertens and Y Larionova and T Pernau and H Haverkamp and T Dullweber and R Peibst and R Brendel},

doi = {10.1002/pip.3828},

year  = {2024},

date = {2024-06-06},

journal = {Progress in Photovoltaics: Research and Applications},

abstract = {An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma-enhanced chemical vapor deposition (PECVD) system with low-frequency (LF) plasma source for the surface passivation of undiffused textured p-type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high-quality LF-PECVD AlOx/SiNy passivation stack on undiffused textured p-type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p-type back junction solar cells featuring a poly-Si-based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open-circuit voltage of 725 mV on a M2-sized Ga-doped p-type Czochralski-grown Si wafer as independently confirmed by ISFH CalTeC.},

keywords = {},

pubstate = {forthcoming},

tppubtype = {article}

}

@article{Mertens2024,

title = {Plasma enhanced chemical vapor-deposited SiOx(Ny)/n-type polysilicon on oxide passivating contacts in industrial back-contacted Si solar cells},

author = {V Mertens and S Dorn and J Langlois and M Stöhr and Y Larionova and W Veurman and R Brendel and N Ambrosius and A Vogt and T Pernau and H Haverkamp and T Dullweber},

doi = {10.1002/solr.202300919},

year  = {2024},

date = {2024-06-01},

urldate = {2024-01-29},

journal = {Solar RRL},

volume = {8},

issue = {12},

pages = {2300919},

abstract = {In this paper we investigate different in situ grown Plasma Enhanced Chemical Vapor Deposition (PECVD) grown interfacial oxides for n-type polysilicon passivating contacts. We apply SiOx(Ny)/n-type amorphous silicon stacks created from either N2O plasma or O2 plasma to POLO IBC solar cells using our structured deposition process through a glass mask to create the IBC layout. We determine experimentally the impact of plasma exposure time for interfacial oxide growth on solar cell efficiencies. The POLO IBC cell results show that the PECVD oxides SiOxNy and SiOx with optimized plasma exposure time give similar maximum efficiencies of 23.8 % and 23.7 %, respectively. These data demonstrate the feasibility to deposit a high-quality in situ PECVD interfacial SiOx(Ny) layers for surface passivation and current transport of passivated contacts at the same time. For the SiOx/n-type polysilicon stack we find that both, plasma exposure time for interfacial oxide growth or polysilicon anneal temperature variations, can lead to similar optimum of solar cell efficiencies. We analyze the current Voc losses due to metallization for our solar cells and calculate a realistic to achieve efficiency of 25.22 % for an optimized POLO IBC solar cells applying the Synergistic Efficiency Gain Analysis (SEGA) on Quokka3 simulations. This article is protected by copyright. All rights reserved.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Hu2024,

title = {Triple-junction perovskite–perovskite–silicon solar cells with power conversion efficiency of 24.4%},

author = {H Hu and S X An and Y Li and S Orooji and R Singh and F Schackmar and F Laufer and Q Jin and T Feeney and A Diercks and F Gota and S Moghadamzadeh and T Pan and M Rienäcker and R Peibst and B Abdollahi Nejand and U W Paetzold},

doi = {10.1039/D3EE03687A},

year  = {2024},

date = {2024-04-21},

urldate = {2024-01-01},

journal = {Energy Environ. Sci.},

volume = {17},

issue = {8},

pages = {2800-2814},

publisher = {The Royal Society of Chemistry},

abstract = {The recent tremendous progress in monolithic perovskite-based double-junction solar cells is just the start of a new era of ultra-high-efficiency multi-junction photovoltaics. We report on triple-junction perovskite–perovskite–silicon solar cells with a record power conversion efficiency of 24.4%. Optimizing the light management of each perovskite sub-cell (∼1.84 and ∼1.52 eV for top and middle cells, respectively), we maximize the current generation up to 11.6 mA cm−2. Key to this achievement was our development of a high-performance middle perovskite sub-cell, employing a stable pure-α-phase high-quality formamidinium lead iodide perovskite thin film (free of wrinkles, cracks, and pinholes). This enables a high open-circuit voltage of 2.84 V in a triple junction. Non-encapsulated triple-junction devices retain up to 96.6% of their initial efficiency if stored in the dark at 85 °C for 1081 h.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Bredemeier2023,

title = {Large-scale spatiotemporal calculation of photovoltaic capacity factors using ray tracing: A case study in urban environments},

author = {D Bredemeier and C Schinke and R Niepelt and R Brendel},

doi = {10.1002/pip.3756},

year  = {2024},

date = {2024-04-01},

urldate = {2023-11-29},

journal = {Progress in Photovoltaics: Research and Applications},

volume = {32},

issue = {4},

pages = {232-243},

abstract = {Photovoltaics (PVs) on building facades, either building-integrated or building-attached, offer a large energy yield potential especially in densely populated urban areas. Targeting this potential requires the availability of planning tools such as insolation forecasts. However, calculating the PV potential of facade surfaces in an urban environment is challenging. Complex time-dependent shadowing and light reflections must be considered. In this contribution, we present fast ray tracing calculations for insolation forecasts in large urban environments using clustering of Sun positions into typical days. We use our approach to determine time resolved PV capacity factors for rooftops and facades in a wide variety of environments, which is particularly useful for energy system analyses. The advantage of our approach is that the determined capacity factors for one geographic location can be easily extended to larger geographic regions. In this contribution, we perform calculations in three exemplary environments and extend the results globally. Especially for facade surfaces, we find that there is a pronounced intra-day and also seasonal distribution of PV potentials that strongly depends on the degree of latitude. The consideration of light reflections in our ray tracing approach causes an increase in calculated full load hours for facade surfaces between 10% and 25% for most geographical locations.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}