1.
D Bredemeier; D C Walter; R Heller; J Schmidt
Impact of Silicon Nitride Film Properties on Hydrogen In-Diffusion into Crystalline Silicon Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition, S. 112-115, Marseille, France, 2019, ISBN: 3-936338-60-4.
@inproceedings{Bredemeier2019d,
title = {Impact of Silicon Nitride Film Properties on Hydrogen In-Diffusion into Crystalline Silicon},
author = {D Bredemeier and D C Walter and R Heller and J Schmidt},
editor = {WIP},
doi = {10.4229/EUPVSEC20192019-2AO.4.4},
isbn = {3-936338-60-4},
year = {2019},
date = {2019-10-23},
booktitle = {Proceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition},
pages = {112-115},
address = {Marseille, France},
abstract = {Hydrogen-rich silicon nitride films deposited on top of crystalline silicon wafers are a common source of hydrogen within solar cell production. Upon rapid thermal annealing (RTA), hydrogen bonds within the silicon nitride films dissociate and the hydrogen diffuses both into the environment as well as into the silicon bulk. Within this study, we investigate the impact of silicon nitride material properties on the amount of hydrogen introduced into the silicon bulk during RTA treatment. The measurements clearly show that the atomic density of the silicon nitride film has a pronounced impact on the hydrogen in-diffusion. Importantly, we find that the total hydrogen loss during RTA within the silicon nitride films is not correlated with the actual amount of hydrogen introduced into the silicon bulk.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
Hydrogen-rich silicon nitride films deposited on top of crystalline silicon wafers are a common source of hydrogen within solar cell production. Upon rapid thermal annealing (RTA), hydrogen bonds within the silicon nitride films dissociate and the hydrogen diffuses both into the environment as well as into the silicon bulk. Within this study, we investigate the impact of silicon nitride material properties on the amount of hydrogen introduced into the silicon bulk during RTA treatment. The measurements clearly show that the atomic density of the silicon nitride film has a pronounced impact on the hydrogen in-diffusion. Importantly, we find that the total hydrogen loss during RTA within the silicon nitride films is not correlated with the actual amount of hydrogen introduced into the silicon bulk.
2.
D Bredemeier; D C Walter; J Schmidt
Impact of Silicon Nitride Film Properties on Hydrogen In-Diffusion into Crystalline Silicon Vortrag
Marseille, France, 09.09.2019, (36th European Photovoltaic Solar Energy Conference and Exhibition).
@misc{Bredemeier2019c,
title = {Impact of Silicon Nitride Film Properties on Hydrogen In-Diffusion into Crystalline Silicon},
author = {D Bredemeier and D C Walter and J Schmidt},
year = {2019},
date = {2019-09-09},
address = {Marseille, France},
abstract = {Hydrogen-rich silicon nitride films deposited on top of crystalline silicon wafers are a common source of hydrogen within solar cell production. Upon rapid thermal annealing (RTA), hydrogen bonds within the silicon nitride films dissociate and the hydrogen diffuses both into the environment as well as into the silicon bulk. Within this study, we investigate the impact of silicon nitride material properties on the amount of hydrogen introduced into the silicon bulk during RTA treatment. The measurements clearly show that the atomic density of the silicon nitride film has a pronounced impact on the hydrogen in-diffusion. Importantly, we find that the total hydrogen loss during RTA within the silicon nitride films is not correlated with the actual amount of hydrogen introduced into the silicon bulk.},
note = {36th European Photovoltaic Solar Energy Conference and Exhibition},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
Hydrogen-rich silicon nitride films deposited on top of crystalline silicon wafers are a common source of hydrogen within solar cell production. Upon rapid thermal annealing (RTA), hydrogen bonds within the silicon nitride films dissociate and the hydrogen diffuses both into the environment as well as into the silicon bulk. Within this study, we investigate the impact of silicon nitride material properties on the amount of hydrogen introduced into the silicon bulk during RTA treatment. The measurements clearly show that the atomic density of the silicon nitride film has a pronounced impact on the hydrogen in-diffusion. Importantly, we find that the total hydrogen loss during RTA within the silicon nitride films is not correlated with the actual amount of hydrogen introduced into the silicon bulk.
3.
D Bredemeier; D C Walter; R Heller; J Schmidt
In: physica status solidi (RRL) – Rapid Research Letters, Bd. 13, Nr. 8, S. 1900201, 2019.
@article{Bredemeier2019b,
title = {Impact of Hydrogen-Rich Silicon Nitride Material Properties on Light-Induced Lifetime Degradation in Multicrystalline Silicon},
author = {D Bredemeier and D C Walter and R Heller and J Schmidt},
doi = {10.1002/pssr.201900201},
year = {2019},
date = {2019-08-01},
journal = {physica status solidi (RRL) – Rapid Research Letters},
volume = {13},
number = {8},
pages = {1900201},
abstract = {The root cause of “Light and Elevated Temperature Induced Degradation” (LeTID) of the carrier lifetime in multicrystalline silicon (mc-Si) wafers is investigated by depositing hydrogen-rich silicon nitride (SiNx:H) films of different compositions on boron-doped mc-Si wafers. The extent of LeTID observed in mc-Si after rapid thermal annealing (RTA) shows a positive correlation with the amount of hydrogen introduced from the SiNx:H layers into the bulk. The concentration of in-diffused hydrogen is quantified via measuring the resistivity change due to the formation of boron–hydrogen pairs in boron-doped float-zone silicon wafers processed in parallel to the mc-Si wafers. The measurements clearly show that the in-diffusion of hydrogen into the silicon bulk during RTA depends on both the atomic density of the SiNx:H film as well as the film thickness. Importantly, the impact of SiNx:H film properties on LeTID shows the same qualitative dependence as the hydrogen content in the silicon bulk, providing evidence that hydrogen is involved in the LeTID defect activation process.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The root cause of “Light and Elevated Temperature Induced Degradation” (LeTID) of the carrier lifetime in multicrystalline silicon (mc-Si) wafers is investigated by depositing hydrogen-rich silicon nitride (SiNx:H) films of different compositions on boron-doped mc-Si wafers. The extent of LeTID observed in mc-Si after rapid thermal annealing (RTA) shows a positive correlation with the amount of hydrogen introduced from the SiNx:H layers into the bulk. The concentration of in-diffused hydrogen is quantified via measuring the resistivity change due to the formation of boron–hydrogen pairs in boron-doped float-zone silicon wafers processed in parallel to the mc-Si wafers. The measurements clearly show that the in-diffusion of hydrogen into the silicon bulk during RTA depends on both the atomic density of the SiNx:H film as well as the film thickness. Importantly, the impact of SiNx:H film properties on LeTID shows the same qualitative dependence as the hydrogen content in the silicon bulk, providing evidence that hydrogen is involved in the LeTID defect activation process.
4.
B Veith-Wolf; R Witteck; A Morlier; H Schulte-Huxel; J Schmidt
Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces Proceedings Article
In: IEEE, (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), S. 1173-1178, Portland, OR, USA, 2016, ISBN: 978-1-5090-2725-5.
@inproceedings{Veith-Wolf2016,
title = {Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces},
author = {B Veith-Wolf and R Witteck and A Morlier and H Schulte-Huxel and J Schmidt},
editor = {IEEE},
doi = {10.1109/PVSC.2016.7749799},
isbn = {978-1-5090-2725-5},
year = {2016},
date = {2016-06-01},
booktitle = {2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)},
journal = {Proceedings of the 43rd IEEE Photovoltaic Specialists Conference},
pages = {1173-1178},
address = {Portland, OR, USA},
abstract = {We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×10^13 cm-2.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×10^13 cm-2.
5.
S Gatz; T Dullweber; V Mertens; F Einsele; R Brendel
Firing stability of SiNy/SiNx stacks for the surface passivation of crystalline silicon solar cells Artikel
In: Solar Energy Materials and Solar Cells, Bd. 96, S. 180-185, 2012.
@article{Gatz2012b,
title = {Firing stability of SiNy/SiNx stacks for the surface passivation of crystalline silicon solar cells},
author = {S Gatz and T Dullweber and V Mertens and F Einsele and R Brendel},
doi = {10.1016/j.solmat.2011.09.051},
year = {2012},
date = {2012-01-01},
journal = {Solar Energy Materials and Solar Cells},
volume = {96},
pages = {180-185},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
6.
S Gatz; F Einsele; T Dullweber; R Brendel
Firing Stability of SiNy / SiNx Surface Passivation Stacks for Crystalline Silicon Solar Cells Proceedings Article
In: WIP, (Hrsg.): 26th European Photovoltaic Solar Energy Conference and Exhibition, S. 1132-1136, Hamburg, Germany, 2011, ISBN: 3-936338-27-2.
@inproceedings{Gatz2011d,
title = {Firing Stability of SiNy / SiNx Surface Passivation Stacks for Crystalline Silicon Solar Cells},
author = {S Gatz and F Einsele and T Dullweber and R Brendel},
editor = {WIP},
doi = {10.4229/26thEUPVSEC2011-2DO.1.5},
isbn = {3-936338-27-2},
year = {2011},
date = {2011-09-01},
booktitle = {26th European Photovoltaic Solar Energy Conference and Exhibition},
pages = {1132-1136},
address = {Hamburg, Germany},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}