421.
K Sporleder; M Turek; N Schüler; V Naumann; D Hevisov; C Pöblau; S Großer; H Schulte-Huxel; J Bauer; C Hagendorf
Quick test for reversible and irreversible PID of bifacial PERC solar cells Artikel
In: Solar Energy Materials and Solar Cells, Bd. 219, S. 110755, 2021, ISSN: 0927-0248.
@article{Sporleder2021b,
title = {Quick test for reversible and irreversible PID of bifacial PERC solar cells},
author = {K Sporleder and M Turek and N Schüler and V Naumann and D Hevisov and C Pöblau and S Großer and H Schulte-Huxel and J Bauer and C Hagendorf},
doi = {10.1016/j.solmat.2020.110755},
issn = {0927-0248},
year = {2021},
date = {2021-01-01},
journal = {Solar Energy Materials and Solar Cells},
volume = {219},
pages = {110755},
abstract = {High voltage stress at the rear side of bifacial PERC cells leads to severe power losses. In contrast to monofacial PERC solar cells, reversible de-polarization related potential induced degradation (PID-p) and irreversible corrosive potential induced degradation (PID-c) can occur. Our results show that a reliable assessment of the solar cells power losses requires a modified PID test method which includes illumination in addition to the high voltage stress test. Furthermore, a recovery step needs to be added to the test scheme to separate reversible PID-p contributions from irreversible PID-c damages. We show that both, the degree of degradation as well as the contributions of PID-p and PIC-c depend sensitively on the solar cell under consideration. Thus, we propose to include both illumination during PID stress as well as a recovery step in the PID test scheme for bifacial PERC cells. Additionally, we show that the most sensitive cell parameter for the detection of rear side PID is given by the rear side measurement of the short circuit current. Finally, we present results showing that a 0.1 sun illumination during this characterization step is sufficient for an assessment of the PID. Based on these results, we propose a test setup which combines the required stress test conditions with an in-situ tracking of the PID.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
High voltage stress at the rear side of bifacial PERC cells leads to severe power losses. In contrast to monofacial PERC solar cells, reversible de-polarization related potential induced degradation (PID-p) and irreversible corrosive potential induced degradation (PID-c) can occur. Our results show that a reliable assessment of the solar cells power losses requires a modified PID test method which includes illumination in addition to the high voltage stress test. Furthermore, a recovery step needs to be added to the test scheme to separate reversible PID-p contributions from irreversible PID-c damages. We show that both, the degree of degradation as well as the contributions of PID-p and PIC-c depend sensitively on the solar cell under consideration. Thus, we propose to include both illumination during PID stress as well as a recovery step in the PID test scheme for bifacial PERC cells. Additionally, we show that the most sensitive cell parameter for the detection of rear side PID is given by the rear side measurement of the short circuit current. Finally, we present results showing that a 0.1 sun illumination during this characterization step is sufficient for an assessment of the PID. Based on these results, we propose a test setup which combines the required stress test conditions with an in-situ tracking of the PID.
422.
P Jäger; V Mertens; U Baumann; T Dullweber
In: IEEE Journal of Photovoltaics, Bd. 11, Nr. 1, S. 50-57, 2021.
@article{Jäger2020c,
title = {A Detailed Chemical Model for the Diffusion of Phosphorus Into the Silicon Wafer During POCl3 Diffusion},
author = {P Jäger and V Mertens and U Baumann and T Dullweber},
doi = {10.1109/JPHOTOV.2020.3038331},
year = {2021},
date = {2021-01-01},
journal = {IEEE Journal of Photovoltaics},
volume = {11},
number = {1},
pages = {50-57},
abstract = {The POCl 3 diffusion is the main technology to form the p-n junction of industrial silicon solar cells. However, the diffusion mechanism of phosphorus (P) into the silicon wafer is not fully understood. In this article, we study the P diffusion mechanism during drive-in by systematically varying the drive-in time in the oxygen (O 2 ) atmosphere and subsequently in nitrogen (N 2 ). When increasing the drive-in time in O 2 from 0 to 120 min, the sheet resistance R sheet stays constant at 485±30 Ω/sq. Hence, we demonstrate for the first time that the phosphorus diffusion can be completely suppressed in the O 2 atmosphere. When adding a drive-in in the N 2 atmosphere directly after the drive-in in O 2 , we find that the SiO 2 thickness d SiO2,O2 changes from initially 2 to 10 nm after O 2 drive-in to an equilibrium SiO 2 thickness d SiO2,eq of 4.7 nm after N 2 drive-in. We prove for the first time that if d SiO2,O2 > d SiO2,eq , no P diffuses into the silicon wafer even in the N 2 atmosphere. Only if d SiO2,O2 < d SiO2,eq , phosphorus diffuses into the silicon wafer in the N 2 atmosphere. We propose a detailed chemical model to explain our experimental results, which assumes that the diffusion of Si from the wafer through the SiO 2 interface toward the PSG plays a key role. In this model, P can only diffuse into the Si wafer if P 2 O 5 in the PSG is reduced by the Si from the wafer to P and SiO 2 .},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The POCl 3 diffusion is the main technology to form the p-n junction of industrial silicon solar cells. However, the diffusion mechanism of phosphorus (P) into the silicon wafer is not fully understood. In this article, we study the P diffusion mechanism during drive-in by systematically varying the drive-in time in the oxygen (O 2 ) atmosphere and subsequently in nitrogen (N 2 ). When increasing the drive-in time in O 2 from 0 to 120 min, the sheet resistance R sheet stays constant at 485±30 Ω/sq. Hence, we demonstrate for the first time that the phosphorus diffusion can be completely suppressed in the O 2 atmosphere. When adding a drive-in in the N 2 atmosphere directly after the drive-in in O 2 , we find that the SiO 2 thickness d SiO2,O2 changes from initially 2 to 10 nm after O 2 drive-in to an equilibrium SiO 2 thickness d SiO2,eq of 4.7 nm after N 2 drive-in. We prove for the first time that if d SiO2,O2 > d SiO2,eq , no P diffuses into the silicon wafer even in the N 2 atmosphere. Only if d SiO2,O2 < d SiO2,eq , phosphorus diffuses into the silicon wafer in the N 2 atmosphere. We propose a detailed chemical model to explain our experimental results, which assumes that the diffusion of Si from the wafer through the SiO 2 interface toward the PSG plays a key role. In this model, P can only diffuse into the Si wafer if P 2 O 5 in the PSG is reduced by the Si from the wafer to P and SiO 2 .
423.
B Min; N Wehmeier; T Brendemuehl; F Haase; Y Larionova; L Nasebandt; H Schulte-Huxel; R Peibst; R Brendel
In: Solar RRL, Bd. 5, Nr. 1, S. 2000703, 2021.
@article{https://doi.org/10.1002/solr.202000703b,
title = {716 mV Open-Circuit Voltage with Fully Screen-Printed p-Type Back Junction Solar Cells Featuring an Aluminum Front Grid and a Passivating Polysilicon on Oxide Contact at the Rear Side},
author = {B Min and N Wehmeier and T Brendemuehl and F Haase and Y Larionova and L Nasebandt and H Schulte-Huxel and R Peibst and R Brendel},
doi = {10.1002/solr.202000703},
year = {2021},
date = {2021-01-01},
journal = {Solar RRL},
volume = {5},
number = {1},
pages = {2000703},
abstract = {This article reports the recent progress of p-type back junction solar cells featuring an aluminum front grid and an n+-type passivating polysilicon on oxide (POLO) contact at the cell rear side. The best cell has an efficiency of 22.6% and an open-circuit voltage of 716 mV, independently confirmed by Institute for Solar Energy Research Hamelin (ISFH) CalTeC. The cell area is 244.5 cm2. The increase in the SiNx capping layer thickness at the cell rear side reduces the deterioration of passivation quality of the POLO contact by screen-printed silver. This increases the open-circuit voltage by 22 mV compared with cells with a thinner nitride layer thickness. The investigation with scanning electron microscopy shows that the damage of the POLO contacts underneath the screen-printed metal contacts is avoided by increasing the SiNx capping layer thickness. A contact resistivity of 2 mΩ cm2 is measured using the transfer length method.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
This article reports the recent progress of p-type back junction solar cells featuring an aluminum front grid and an n+-type passivating polysilicon on oxide (POLO) contact at the cell rear side. The best cell has an efficiency of 22.6% and an open-circuit voltage of 716 mV, independently confirmed by Institute for Solar Energy Research Hamelin (ISFH) CalTeC. The cell area is 244.5 cm2. The increase in the SiNx capping layer thickness at the cell rear side reduces the deterioration of passivation quality of the POLO contact by screen-printed silver. This increases the open-circuit voltage by 22 mV compared with cells with a thinner nitride layer thickness. The investigation with scanning electron microscopy shows that the damage of the POLO contacts underneath the screen-printed metal contacts is avoided by increasing the SiNx capping layer thickness. A contact resistivity of 2 mΩ cm2 is measured using the transfer length method.
424.
T Gewohn; M R Vogt; B Lim; C Schinke; R Brendel
Postproduction Coloring of Photovoltaic Modules With Imprinted Textiles Artikel
In: IEEE Journal of Photovoltaics, Bd. 11, Nr. 1, S. 138-143, 2021.
@article{Gewohn2021,
title = {Postproduction Coloring of Photovoltaic Modules With Imprinted Textiles},
author = {T Gewohn and M R Vogt and B Lim and C Schinke and R Brendel},
doi = {10.1109/JPHOTOV.2020.3034001},
year = {2021},
date = {2021-01-01},
journal = {IEEE Journal of Photovoltaics},
volume = {11},
number = {1},
pages = {138-143},
abstract = {We present a customizable and potentially cost-efficient technique of coloring photovoltaic modules by laminating colored textiles onto photovoltaic cover glass (CoTex). A white nonwoven fabric is imprinted with any color, design, or graphic and is then laminated onto an arbitrary, frameless photovoltaic module. The short-circuit current losses of these modules range from 12% to 32% and depend on the type and coverage of the color, i.e., how much of the solar cell structure remains visible. Uncolored fabrics generate a grayish photovoltaic module with a short-circuit current density loss of 11% relative to a standard module. We fabricate CoTex building-integrated photovoltaic test modules and experimentally analyze their durability, UV stability, energy yield, hiding of the solar cells and appearance.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We present a customizable and potentially cost-efficient technique of coloring photovoltaic modules by laminating colored textiles onto photovoltaic cover glass (CoTex). A white nonwoven fabric is imprinted with any color, design, or graphic and is then laminated onto an arbitrary, frameless photovoltaic module. The short-circuit current losses of these modules range from 12% to 32% and depend on the type and coverage of the color, i.e., how much of the solar cell structure remains visible. Uncolored fabrics generate a grayish photovoltaic module with a short-circuit current density loss of 11% relative to a standard module. We fabricate CoTex building-integrated photovoltaic test modules and experimentally analyze their durability, UV stability, energy yield, hiding of the solar cells and appearance.
425.
G M Wilson; M M Al-Jassim; W K Metzger; S W Glunz; P Verlinden; X Gang; L M Mansfield; B J Stanbery; K Zhu; Y Yan; J J Berry; A J Ptak; F Dimroth; B M Kayes; A C Tamboli; R Peibst; K R Catchpole; M Reese; C Klinga; P Denholm; M Morjaria; M G Deceglie; J M Freeman; M A Mikofski; D C Jordan; G TamizhMani; D B Sulas
The 2020 Photovoltaic Technologies Roadmap Artikel
In: Journal of Physics D: Applied Physics, Bd. 53, Nr. 49, S. 493001, 2020.
@article{Wilson2020,
title = {The 2020 Photovoltaic Technologies Roadmap},
author = {G M Wilson and M M Al-Jassim and W K Metzger and S W Glunz and P Verlinden and X Gang and L M Mansfield and B J Stanbery and K Zhu and Y Yan and J J Berry and A J Ptak and F Dimroth and B M Kayes and A C Tamboli and R Peibst and K R Catchpole and M Reese and C Klinga and P Denholm and M Morjaria and M G Deceglie and J M Freeman and M A Mikofski and D C Jordan and G TamizhMani and D B Sulas},
doi = {10.1088/1361-6463/ab9c6a},
year = {2020},
date = {2020-12-02},
journal = {Journal of Physics D: Applied Physics},
volume = {53},
number = {49},
pages = {493001},
abstract = {Over the past decade, the global cumulative installed photovoltaic (PV) capacity has grown exponentially, reaching 591 GW in 2019. Rapid progress was driven in large part by improvements in solar cell and module efficiencies, reduction in manufacturing costs and the realization of levelized costs of electricity that are now generally less than other energy sources and approaching similar costs with storage included. Given this success, it is a particularly fitting time to assess the state of the photovoltaics field and the technology milestones that must be achieved to maximize future impact and forward momentum. This roadmap outlines the critical areas of development in all of the major PV conversion technologies, advances needed to enable terawatt-scale PV installation, and cross-cutting topics on reliability, characterization, and applications. Each perspective provides a status update, summarizes the limiting immediate and long-term technical challenges and highlights breakthroughs that are needed to address them. In total, this roadmap is intended to guide researchers, funding agencies and industry in identifying the areas of development that will have the most impact on PV technology in the upcoming years.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Over the past decade, the global cumulative installed photovoltaic (PV) capacity has grown exponentially, reaching 591 GW in 2019. Rapid progress was driven in large part by improvements in solar cell and module efficiencies, reduction in manufacturing costs and the realization of levelized costs of electricity that are now generally less than other energy sources and approaching similar costs with storage included. Given this success, it is a particularly fitting time to assess the state of the photovoltaics field and the technology milestones that must be achieved to maximize future impact and forward momentum. This roadmap outlines the critical areas of development in all of the major PV conversion technologies, advances needed to enable terawatt-scale PV installation, and cross-cutting topics on reliability, characterization, and applications. Each perspective provides a status update, summarizes the limiting immediate and long-term technical challenges and highlights breakthroughs that are needed to address them. In total, this roadmap is intended to guide researchers, funding agencies and industry in identifying the areas of development that will have the most impact on PV technology in the upcoming years.
426.
L Helmich; D C Walter; D Bredemeier; J Schmidt
In: physica status solidi (RRL) – Rapid Research Letters, Bd. 14, Nr. 12, S. 2000367, 2020.
@article{Helmich2020,
title = {Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing},
author = {L Helmich and D C Walter and D Bredemeier and J Schmidt},
doi = {10.1002/pssr.202000367},
year = {2020},
date = {2020-12-01},
journal = {physica status solidi (RRL) – Rapid Research Letters},
volume = {14},
number = {12},
pages = {2000367},
abstract = {Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to boron-doped float-zone silicon wafers. A rapid thermal annealing (RTA) step is performed in an infrared conveyor-belt furnace at different set-peak temperatures. The hydrogen content diffused into the crystalline silicon during the RTA step is quantified by measurements of the silicon resistivity increase due to hydrogen passivation of boron dopant atoms. These experiments indicate that there exists a temperature-dependent maximum in the introduced hydrogen content. The exact position of this maximum depends on the composition of the SiNx layer. The highest total hydrogen content, exceeding 1015 cm−3, is introduced into the silicon bulk from silicon-rich SiNx layers with a refractive index of 2.3 (at λ = 633 nm) at an RTA peak temperature of 800 °C, omitting the Al2O3 interlayer. Adding an Al2O3 interlayer with a thickness of 20 nm reduces the hydrogen content by a factor of four, demonstrating that Al2O3 acts as a highly effective hydrogen diffusion barrier. Measuring the hydrogen content in the silicon bulk as a function of Al2O3 thickness at different RTA peak temperatures provides the hydrogen diffusion length in Al2O3 as a function of measured temperature.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to boron-doped float-zone silicon wafers. A rapid thermal annealing (RTA) step is performed in an infrared conveyor-belt furnace at different set-peak temperatures. The hydrogen content diffused into the crystalline silicon during the RTA step is quantified by measurements of the silicon resistivity increase due to hydrogen passivation of boron dopant atoms. These experiments indicate that there exists a temperature-dependent maximum in the introduced hydrogen content. The exact position of this maximum depends on the composition of the SiNx layer. The highest total hydrogen content, exceeding 1015 cm−3, is introduced into the silicon bulk from silicon-rich SiNx layers with a refractive index of 2.3 (at λ = 633 nm) at an RTA peak temperature of 800 °C, omitting the Al2O3 interlayer. Adding an Al2O3 interlayer with a thickness of 20 nm reduces the hydrogen content by a factor of four, demonstrating that Al2O3 acts as a highly effective hydrogen diffusion barrier. Measuring the hydrogen content in the silicon bulk as a function of Al2O3 thickness at different RTA peak temperatures provides the hydrogen diffusion length in Al2O3 as a function of measured temperature.
427.
B Min; N Wehmeier; T Brendemuehl; A Merkle; F Haase; Y Larionova; L David; H Schulte-Huxel; R Peibst; R Brendel
In: Solar RRL, Bd. 4, Nr. 12, S. 2000435, 2020.
@article{Min2020b,
title = {A 22.3% Efficient p-Type Back Junction Solar Cell with an Al-Printed Front-Side Grid and a Passivating n+-Type Polysilicon on Oxide Contact at the Rear Side},
author = {B Min and N Wehmeier and T Brendemuehl and A Merkle and F Haase and Y Larionova and L David and H Schulte-Huxel and R Peibst and R Brendel},
doi = {10.1002/solr.202000435},
year = {2020},
date = {2020-12-01},
journal = {Solar RRL},
volume = {4},
number = {12},
pages = {2000435},
abstract = {The fabrication of a silicon solar cell on 6 in. pseudo-square p-type Czochralski grown silicon wafers featuring poly-Si-based passivating contacts for electrons at the cell rear side and screen-printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n+-poly-Si/Al2O3/SiNx layer system, contacted by screen-printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open-circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The fabrication of a silicon solar cell on 6 in. pseudo-square p-type Czochralski grown silicon wafers featuring poly-Si-based passivating contacts for electrons at the cell rear side and screen-printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n+-poly-Si/Al2O3/SiNx layer system, contacted by screen-printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open-circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.
428.
N Folchert; R Peibst; R Brendel
Modeling recombination and contact resistance of poly-Si junctions Artikel
In: Progress in Photovoltaics: Research and Applications, Bd. 28, Nr. 12, S. 1289-1307, 2020.
@article{Folchert2020,
title = {Modeling recombination and contact resistance of poly-Si junctions},
author = {N Folchert and R Peibst and R Brendel},
doi = {10.1002/pip.3327},
year = {2020},
date = {2020-12-01},
journal = {Progress in Photovoltaics: Research and Applications},
volume = {28},
number = {12},
pages = {1289-1307},
abstract = {We present a semi-analytical model for the calculation of the current through and the recombination in carrier-selective junctions consisting of a poly-Si/SiOx/c-Si layer stack. We calculate the recombination parameter J0 and the contact resistance ρC after solving the band-bending-problem on both sides of the interfacial oxide. Comparisons with finite-element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime-, current-voltage- and capacitance-voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J0 and ρC of our state-of-the-art poly-silicon-on-oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly-Si based junctions.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We present a semi-analytical model for the calculation of the current through and the recombination in carrier-selective junctions consisting of a poly-Si/SiOx/c-Si layer stack. We calculate the recombination parameter J0 and the contact resistance ρC after solving the band-bending-problem on both sides of the interfacial oxide. Comparisons with finite-element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime-, current-voltage- and capacitance-voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J0 and ρC of our state-of-the-art poly-silicon-on-oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly-Si based junctions.
429.
R Peibst; R Brendel; F Haase; C Hollemann; C Kruse; Y Larionova; B Lim; J Krügener; B Min; M Rienäcker
Passivating poly-Si on oxide contacts – from fundamental investigations towards industrial implementation Vortrag
Online Event, 30.11.2020, (2nd International Conference on Photovoltaic Science and Technologies (PVCon2020)).
@misc{Peibst2020b,
title = {Passivating poly-Si on oxide contacts – from fundamental investigations towards industrial implementation},
author = {R Peibst and R Brendel and F Haase and C Hollemann and C Kruse and Y Larionova and B Lim and J Krügener and B Min and M Rienäcker},
year = {2020},
date = {2020-11-30},
address = {Online Event},
note = {2nd International Conference on Photovoltaic Science and Technologies (PVCon2020)},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
430.
D Büchner; O Mercker; K Wurdinger
OptDienE: Optionen zum netzdienlichen Betrieb von Einzelraumfeuerstätten Vortrag
Online Event, 24.11.2020, (Fachkonferenz Energetische Biomassenutzung (Gemeinsame Fachkonferenz der BMWi-Forschungsnetzwerke Bioenergie und Energiewendebauen)).
@misc{Büchner2020,
title = {OptDienE: Optionen zum netzdienlichen Betrieb von Einzelraumfeuerstätten},
author = {D Büchner and O Mercker and K Wurdinger},
year = {2020},
date = {2020-11-24},
address = {Online Event},
note = {Fachkonferenz Energetische Biomassenutzung (Gemeinsame Fachkonferenz der BMWi-Forschungsnetzwerke Bioenergie und Energiewendebauen)},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
431.
T Ohrdes; E Schneider; M Knoop
Wind-Solar-Wärmepumpenquartier Vortrag
Online Event, 24.11.2020, (Fachkonferenz Energetische Biomassenutzung (Gemeinsame Fachkonferenz der BMWi-Forschungsnetzwerke Bioenergie und Energiewendebauen)).
@misc{Ohrdes2020f,
title = {Wind-Solar-Wärmepumpenquartier},
author = {T Ohrdes and E Schneider and M Knoop},
year = {2020},
date = {2020-11-24},
address = {Online Event},
note = {Fachkonferenz Energetische Biomassenutzung (Gemeinsame Fachkonferenz der BMWi-Forschungsnetzwerke Bioenergie und Energiewendebauen)},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
432.
T Dullweber; M Stöhr; C Kruse; F Haase; B Beier; P Jäger; V Mertens; R Peibst; R Brendel
Industrial PERC+ solar cell efficiency projection towards 24% Sonstige
Photovoltaics International Volume 45, 2020.
@misc{Dullweber2020cb,
title = {Industrial PERC+ solar cell efficiency projection towards 24%},
author = {T Dullweber and M Stöhr and C Kruse and F Haase and B Beier and P Jäger and V Mertens and R Peibst and R Brendel},
year = {2020},
date = {2020-11-23},
howpublished = {Photovoltaics International Volume 45},
keywords = {},
pubstate = {published},
tppubtype = {misc}
}
433.
B Lim
Form, color, function: R&D aspects of VIPV module technology Vortrag
Online Event, 18.11.2020, (ETIP-PV Virtual Conference 2020: I3PV – Integrated, Innovative, Intelligent).
@misc{Lim2020b,
title = {Form, color, function: R&D aspects of VIPV module technology},
author = {B Lim},
year = {2020},
date = {2020-11-18},
address = {Online Event},
note = {ETIP-PV Virtual Conference 2020: I3PV – Integrated, Innovative, Intelligent},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
434.
M Yasin
Automatisierte Effizienzkontrolle von Wärmezentralen in Mehrfamilienhäusern Vortrag
Online Event, 13.11.2020, (12. EffizienzTagung Bauen+Modernisieren).
@misc{Yasin2020,
title = {Automatisierte Effizienzkontrolle von Wärmezentralen in Mehrfamilienhäusern},
author = {M Yasin},
year = {2020},
date = {2020-11-13},
address = {Online Event},
note = {12. EffizienzTagung Bauen+Modernisieren},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
435.
E Schneider
Wärmepumpenquartier mit Wind und PV Vortrag
Online Event, 12.11.2020, (Webinarreihe "Norddeutsche Wärme-Forschung").
@misc{Schneider2020b,
title = {Wärmepumpenquartier mit Wind und PV},
author = {E Schneider},
year = {2020},
date = {2020-11-12},
address = {Online Event},
note = {Webinarreihe "Norddeutsche Wärme-Forschung"},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
436.
F Hüsing
Erdwärmekollektor und Solarregeneration im EFH Vortrag
Online Event, 12.11.2020, (Webinarreihe "Norddeutsche Wärme-Forschung").
@misc{Hüsing2020b,
title = {Erdwärmekollektor und Solarregeneration im EFH},
author = {F Hüsing},
year = {2020},
date = {2020-11-12},
address = {Online Event},
note = {Webinarreihe "Norddeutsche Wärme-Forschung"},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
437.
F Weiland
Erdwärmesonden und Regeneration mit Metallfassaden im Fabrikgebäude Vortrag
Online Event, 12.11.2020, (Webinarreihe "Norddeutsche Wärme-Forschung").
@misc{Weiland2020c,
title = {Erdwärmesonden und Regeneration mit Metallfassaden im Fabrikgebäude},
author = {F Weiland},
year = {2020},
date = {2020-11-12},
address = {Online Event},
note = {Webinarreihe "Norddeutsche Wärme-Forschung"},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
438.
B Chhugani
PVT als alleinige Wärmequelle für Einfamilienhäuser Vortrag
Online Event, 12.11.2020, (Webinarreihe "Norddeutsche Wärme-Forschung").
@misc{Chhugani2020c,
title = {PVT als alleinige Wärmequelle für Einfamilienhäuser},
author = {B Chhugani},
year = {2020},
date = {2020-11-12},
address = {Online Event},
note = {Webinarreihe "Norddeutsche Wärme-Forschung"},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
439.
K Ding; T Grube; J Hauch; N Henze; M Heinrich; R Schlatmann; R Peibst; A Colsmann; J Binder
Photovoltaik für den Straßenverkehr im Energiesystem der Zukunft Vortrag
Online Event, 04.11.2020, (FVEE-Jahrestagung 2020 – Forschung für den European Green Deal).
@misc{Ding2020,
title = {Photovoltaik für den Straßenverkehr im Energiesystem der Zukunft},
author = {K Ding and T Grube and J Hauch and N Henze and M Heinrich and R Schlatmann and R Peibst and A Colsmann and J Binder},
year = {2020},
date = {2020-11-04},
address = {Online Event},
abstract = {Um das Klima nachhaltig schützen zu können, ist unter anderem die Elektrifizierung des Straßentransports mit erneuerbarem Strom unabdingbar. Die Photovoltaik wird dabei eine wesentliche Rolle spielen. Der Vortrag geht zuerst auf die Studie „Kosteneffiziente und klimagerechte Transformationsstrategien für das deutsche Energiesystem bis zum Jahr 2050“ ein und erläutert die verschiedenen Szenarien von PV-Integration in den deutschen Straßentransportsektor. Diverse Solartechnologien können z.B. in der Ladeinfrastruktur als dezentrale und zentrale Lösungen für Batterien- sowie Brennstoffzellen-Elektrofahrzeuge eingesetzt oder direkt in Fahrzeuge integriert werden.},
note = {FVEE-Jahrestagung 2020 – Forschung für den European Green Deal},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
Um das Klima nachhaltig schützen zu können, ist unter anderem die Elektrifizierung des Straßentransports mit erneuerbarem Strom unabdingbar. Die Photovoltaik wird dabei eine wesentliche Rolle spielen. Der Vortrag geht zuerst auf die Studie „Kosteneffiziente und klimagerechte Transformationsstrategien für das deutsche Energiesystem bis zum Jahr 2050“ ein und erläutert die verschiedenen Szenarien von PV-Integration in den deutschen Straßentransportsektor. Diverse Solartechnologien können z.B. in der Ladeinfrastruktur als dezentrale und zentrale Lösungen für Batterien- sowie Brennstoffzellen-Elektrofahrzeuge eingesetzt oder direkt in Fahrzeuge integriert werden.
440.
A Moldovan; K Ding; U Rau; L Korte; R Peibst
Hocheffiziente Solarzellen durch selektive Kontakte Vortrag
Online Event, 04.11.2020, (FVEE-Jahrestagung 2020 – Forschung für den European Green Deal).
@misc{Moldovan2020,
title = {Hocheffiziente Solarzellen durch selektive Kontakte},
author = {A Moldovan and K Ding and U Rau and L Korte and R Peibst},
year = {2020},
date = {2020-11-04},
address = {Online Event},
abstract = {Dieser Vortrag adressiert wissenschaftliche und wirtschaftliche Aspekte für die industrielle sowie kostengünstige Umsetzung von Solarzellenkonzepten mit selektiven passivierenden Kontakten. Hierbei wird die aktuelle Entwicklung der Marktanteile der jeweiligen Technologien im Hinblick auf die Wiederansiedlung der Fertigung in Europa dargestellt und diskutiert was zum einen die technologisch anspruchsvollsten Prozessschritte sind und zum anderen welche Prozessrouten aus ökonomischer Sicht aktuell am sinnvollsten sind. Abschließend wird betrachtet welche Vorteile diese Technologien in Bezug auf den ökologischen Footprint haben und wo die Chancen liegen diesen zu reduzieren.},
note = {FVEE-Jahrestagung 2020 – Forschung für den European Green Deal},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
Dieser Vortrag adressiert wissenschaftliche und wirtschaftliche Aspekte für die industrielle sowie kostengünstige Umsetzung von Solarzellenkonzepten mit selektiven passivierenden Kontakten. Hierbei wird die aktuelle Entwicklung der Marktanteile der jeweiligen Technologien im Hinblick auf die Wiederansiedlung der Fertigung in Europa dargestellt und diskutiert was zum einen die technologisch anspruchsvollsten Prozessschritte sind und zum anderen welche Prozessrouten aus ökonomischer Sicht aktuell am sinnvollsten sind. Abschließend wird betrachtet welche Vorteile diese Technologien in Bezug auf den ökologischen Footprint haben und wo die Chancen liegen diesen zu reduzieren.