Veröffentlichungen
2010 |
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B. -U. Sander, D. Queißer, S. Queißer, F. Delahaye, A. Merkle, T. Brendemühl, and T. Dullweber Inline Single Side Oxide Etch for Rear Side Passivated Solar Cells Inproceedings WIP (Hrsg.): 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 2036-2038, Valencia, Spain, (2010), ISBN: 3-936338-26-4. Links | BibTeX | Schlagwörter: Solar Cells @inproceedings{Sander2010,
title = {Inline Single Side Oxide Etch for Rear Side Passivated Solar Cells}, author = {B -U Sander and D Queißer and S Queißer and F Delahaye and A Merkle and T Brendemühl and T Dullweber}, editor = {WIP}, doi = {10.4229/25thEUPVSEC2010-2CV.2.89}, isbn = {3-936338-26-4}, year = {2010}, date = {2010-09-01}, booktitle = {25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion}, pages = {2036-2038}, address = {Valencia, Spain}, keywords = {Solar Cells}, pubstate = {published}, tppubtype = {inproceedings} } |
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M. Köntges, I. Kunze, S. Kajari-Schröder, X. Breitenmoser, and B. Bjørneklett Quantifying the Risk of Power Loss in PV Modules Due to Micro Cracks Inproceedings WIP (Hrsg.): 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 3745-3752, Valencia, Spain, (2010), ISBN: 3-936338-26-4. Links | BibTeX | Schlagwörter: Lifetime, Micro Crack, photovoltaic module @inproceedings{Köntges2010,
title = { Quantifying the Risk of Power Loss in PV Modules Due to Micro Cracks}, author = {M Köntges and I Kunze and S Kajari-Schröder and X Breitenmoser and B Bjørneklett}, editor = {WIP}, doi = {10.4229/25thEUPVSEC2010-4BO.9.4}, isbn = {3-936338-26-4}, year = {2010}, date = {2010-09-01}, booktitle = {25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion}, pages = {3745-3752}, address = {Valencia, Spain}, keywords = {Lifetime, Micro Crack, photovoltaic module}, pubstate = {published}, tppubtype = {inproceedings} } |
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R. Bock, J. Schmidt, S. Mau, B. Hoex, and R. Brendel IEEE Transactions on Electron Devices 57 (8), 1966-1971, (2010), ISSN: 0018-9383. Links | BibTeX | Schlagwörter: aluminium oxide, Aluminum oxide, amorphus silicon, atomic layer deposition, Current density, emitter passivation, Etching, metallization, n-type silicon, passivation, Photovoltaic cells, screen-printed emitter, silicon @article{Bock2010c,
title = {The ALU+ Concept: N-Type Silicon Solar Cells With Surface-Passivated Screen-Printed Aluminum-Alloyed Rear Emitter}, author = {R Bock and J Schmidt and S Mau and B Hoex and R Brendel}, doi = {10.1109/TED.2010.2050953}, issn = {0018-9383}, year = {2010}, date = {2010-08-01}, journal = {IEEE Transactions on Electron Devices}, volume = {57}, number = {8}, pages = {1966-1971}, keywords = {aluminium oxide, Aluminum oxide, amorphus silicon, atomic layer deposition, Current density, emitter passivation, Etching, metallization, n-type silicon, passivation, Photovoltaic cells, screen-printed emitter, silicon}, pubstate = {published}, tppubtype = {article} } |
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U. Eitner, M. Köntges, and R. Brendel Solar Energy Materials and Solar Cells 94 (8), 1346-1351, (2010), ISSN: 0927-0248, (National Conference on the Emerging Trends in the Photovoltaic Energy and Utilization). Links | BibTeX | Schlagwörter: Deformation, digital image correlation, Experimental technique, PV Module, Thermomechanics @article{EITNER20101346,
title = {Use of digital image correlation technique to determine thermomechanical deformations in photovoltaic laminates: Measurements and accuracy}, author = {U Eitner and M Köntges and R Brendel}, doi = {10.1016/j.solmat.2010.03.028}, issn = {0927-0248}, year = {2010}, date = {2010-08-01}, journal = {Solar Energy Materials and Solar Cells}, volume = {94}, number = {8}, pages = {1346-1351}, note = {National Conference on the Emerging Trends in the Photovoltaic Energy and Utilization}, keywords = {Deformation, digital image correlation, Experimental technique, PV Module, Thermomechanics}, pubstate = {published}, tppubtype = {article} } |
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F. E. Rougieux, D. Macdonald, A. Cuevas, S. Ruffell, J. Schmidt, B. Lim, and A. P. Knights Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon Artikel Journal of Applied Physics 108 (1), 013706, (2010). Links | BibTeX | Schlagwörter: carrier mobility, Doping, electrical resistivity, hall mobility, silicon @article{Rougieux2010,
title = {Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon}, author = {F E Rougieux and D Macdonald and A Cuevas and S Ruffell and J Schmidt and B Lim and A P Knights}, doi = {10.1063/1.3456076}, year = {2010}, date = {2010-07-01}, journal = {Journal of Applied Physics}, volume = {108}, number = {1}, pages = {013706}, keywords = {carrier mobility, Doping, electrical resistivity, hall mobility, silicon}, pubstate = {published}, tppubtype = {article} } |
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S. Steingrube, P. P. Altermatt, D. S. Steingrube, J. Schmidt, and R. Brendel Interpretation of recombination at c-Si/SiNx interfaces by surface damage Artikel Journal of Applied Physics 108 (1), 014506, (2010). Links | BibTeX | Schlagwörter: Doping, illumination, passivation, Solar Cells, surface passivation @article{Steingrube2010b,
title = {Interpretation of recombination at c-Si/SiNx interfaces by surface damage}, author = {S Steingrube and P P Altermatt and D S Steingrube and J Schmidt and R Brendel}, doi = {10.1063/1.3437643}, year = {2010}, date = {2010-07-01}, journal = {Journal of Applied Physics}, volume = {108}, number = {1}, pages = {014506}, keywords = {Doping, illumination, passivation, Solar Cells, surface passivation}, pubstate = {published}, tppubtype = {article} } |
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R. Bock, S. Mau, J. Schmidt, and R. Brendel Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter Artikel Applied Physics Letters 96 (26), 263507, (2010). Links | BibTeX | Schlagwörter: ozone, passivation, Solar Cells, surface oxidation, surface passivation @article{Bock2010b,
title = {Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter}, author = {R Bock and S Mau and J Schmidt and R Brendel}, doi = {10.1063/1.3456536}, year = {2010}, date = {2010-06-01}, journal = {Applied Physics Letters}, volume = {96}, number = {26}, pages = {263507}, keywords = {ozone, passivation, Solar Cells, surface oxidation, surface passivation}, pubstate = {published}, tppubtype = {article} } |
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R. Gogolin, N. P. Harder, and R. Brendel Trapping-related recombination of charge carriers in silicon Inproceedings IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 000443-000446, Honolulu, HI, USA, (2010), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: Carrier lifetime, elemental semiconductors, silicon @inproceedings{Gogolin2010,
title = {Trapping-related recombination of charge carriers in silicon}, author = {R Gogolin and N P Harder and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2010.5616743}, issn = {0160-8371}, year = {2010}, date = {2010-06-01}, booktitle = {2010 35th IEEE Photovoltaic Specialists Conference}, pages = {000443-000446}, address = { Honolulu, HI, USA}, keywords = {Carrier lifetime, elemental semiconductors, silicon}, pubstate = {published}, tppubtype = {inproceedings} } |
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M. Kessler, S. Gatz, P. Altermatt, N. P. Harder, and R. Brendel IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 000359-000363, Honolulu, HI, USA, (2010), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: silicon @inproceedings{Kessler2010,
title = {Influence of emitter profile characteristics on thermal stability and passiviation quality of a-Si/SiNX-passivated boron emitters}, author = {M Kessler and S Gatz and P Altermatt and N P Harder and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2010.5616868}, issn = {0160-8371}, year = {2010}, date = {2010-06-01}, booktitle = {2010 35th IEEE Photovoltaic Specialists Conference}, pages = {000359-000363}, address = {Honolulu, HI, USA}, keywords = {silicon}, pubstate = {published}, tppubtype = {inproceedings} } |
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Y. Larionova, N. P. Harder, and R. Brendel Effect of SiO2 thicknesses in thermal-SiO2/PECVD-SiN stacks on surface passivation of n-type Cz silicon substrates Inproceedings IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 001207-001209, Honolulu, HI, USA, (2010), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: Annealing, Degradation, passivation, silicon, Silicon compounds, Substrates @inproceedings{Larionova2010,
title = {Effect of SiO2 thicknesses in thermal-SiO2/PECVD-SiN stacks on surface passivation of n-type Cz silicon substrates}, author = {Y Larionova and N P Harder and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2010.5614072}, issn = {0160-8371}, year = {2010}, date = {2010-06-01}, booktitle = {2010 35th IEEE Photovoltaic Specialists Conference}, pages = {001207-001209}, address = {Honolulu, HI, USA}, keywords = {Annealing, Degradation, passivation, silicon, Silicon compounds, Substrates}, pubstate = {published}, tppubtype = {inproceedings} } |
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B. Lim, K. Bothe, and J. Schmidt Journal of Applied Physics 107 (12), 123707, (2010). Links | BibTeX | Schlagwörter: Annealing, carrier lifetimes, illumination, interstitial defects, ozone @article{Lim2010,
title = {Impact of oxygen on the permanent deactivation of boron–oxygen-related recombination centers in crystalline silicon}, author = {B Lim and K Bothe and J Schmidt}, doi = {10.1063/1.3431359}, year = {2010}, date = {2010-06-01}, journal = {Journal of Applied Physics}, volume = {107}, number = {12}, pages = {123707}, keywords = {Annealing, carrier lifetimes, illumination, interstitial defects, ozone}, pubstate = {published}, tppubtype = {article} } |
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C. Mader, J. Müller, S. Gatz, T. Dullweber, and R. Brendel Rear-side point-contacts by inline thermal evaporation of aluminum Inproceedings IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 001446-001449, Honolulu, HI, USA, (2010), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: Aluminum, Electrical resistance measurement, Mathematical model, metallization, Photovoltaic cells, silicon, Surface treatment @inproceedings{Mader2010,
title = {Rear-side point-contacts by inline thermal evaporation of aluminum}, author = {C Mader and J Müller and S Gatz and T Dullweber and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2010.5614430}, issn = {0160-8371}, year = {2010}, date = {2010-06-01}, booktitle = {2010 35th IEEE Photovoltaic Specialists Conference}, pages = {001446-001449}, address = {Honolulu, HI, USA}, keywords = {Aluminum, Electrical resistance measurement, Mathematical model, metallization, Photovoltaic cells, silicon, Surface treatment}, pubstate = {published}, tppubtype = {inproceedings} } |
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J. Schmidt, B. Veith, F. Werner, D. Zielke, and R. Brendel Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks Inproceedings IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 000885-000890, Honolulu, HI, USA, (2010), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: Aluminum oxide, Films, passivation, Plasma measurements, Plasmas, silicon @inproceedings{Schmidt2010,
title = {Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks}, author = {J Schmidt and B Veith and F Werner and D Zielke and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2010.5614132}, issn = {0160-8371}, year = {2010}, date = {2010-06-01}, booktitle = {2010 35th IEEE Photovoltaic Specialists Conference}, pages = {000885-000890}, address = {Honolulu, HI, USA}, keywords = {Aluminum oxide, Films, passivation, Plasma measurements, Plasmas, silicon}, pubstate = {published}, tppubtype = {inproceedings} } |
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M. Ernst, and R. Brendel Large area macroporous silicon layers for monocrystalline thin-film solar cells Inproceedings IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 003122-003124, Honolulu, HI, USA, (2010), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: Epitaxial growth, Microscopy, Optical microscopy @inproceedings{Ernst2010,
title = {Large area macroporous silicon layers for monocrystalline thin-film solar cells}, author = {M Ernst and R Brendel}, editor = {IEEE}, doi = {10.1109/PVSC.2010.5614496}, issn = {0160-8371}, year = {2010}, date = {2010-06-01}, booktitle = {2010 35th IEEE Photovoltaic Specialists Conference}, pages = {003122-003124}, address = {Honolulu, HI, USA}, keywords = {Epitaxial growth, Microscopy, Optical microscopy}, pubstate = {published}, tppubtype = {inproceedings} } |
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K. R. McIntosh, and P. P. Altermatt A freeware 1D emitter model for silicon solar cells Inproceedings IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 002188-002193, Honolulu, HI, USA, (2010), ISSN: 0160-8371. Links | BibTeX | Schlagwörter: silicon @inproceedings{McIntosh2010,
title = {A freeware 1D emitter model for silicon solar cells}, author = {K R McIntosh and P P Altermatt}, editor = {IEEE}, doi = {10.1109/PVSC.2010.5616124}, issn = {0160-8371}, year = {2010}, date = {2010-06-01}, booktitle = {2010 35th IEEE Photovoltaic Specialists Conference}, pages = {002188-002193}, address = {Honolulu, HI, USA}, keywords = {silicon}, pubstate = {published}, tppubtype = {inproceedings} } |
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K. Bothe, R. Krain, R. Falster, and R. Sinton Determination of the bulk lifetime of bare multicrystalline silicon wafers Artikel Progress in Photovoltaics: Research and Applications 18 (3), 204-208, (2010), ISSN: 1099-159X. Links | BibTeX | Schlagwörter: Carrier lifetime, Multicrystalline, QSSPC, silicon, solar cell, wafer @article{Bothe2010,
title = {Determination of the bulk lifetime of bare multicrystalline silicon wafers}, author = {K Bothe and R Krain and R Falster and R Sinton}, doi = {10.1002/pip.975}, issn = {1099-159X}, year = {2010}, date = {2010-05-01}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {18}, number = {3}, pages = {204-208}, publisher = {John Wiley & Sons, Ltd.}, keywords = {Carrier lifetime, Multicrystalline, QSSPC, silicon, solar cell, wafer}, pubstate = {published}, tppubtype = {article} } |
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C. Ulzhöfer, P. P. Altermatt, N. -P. Harder, and R. Brendel Journal of Applied Physics 107 (10), 104509, (2010). Links | BibTeX | Schlagwörter: diffusion, Doping, electrical resistivity, Etching, Solar Cells @article{Ulzhöfer2010,
title = {Loss analysis of emitter-wrap-through silicon solar cells by means of experiment and three-dimensional device modeling}, author = {C Ulzhöfer and P P Altermatt and N -P Harder and R Brendel}, doi = {10.1063/1.3373612}, year = {2010}, date = {2010-05-01}, journal = {Journal of Applied Physics}, volume = {107}, number = {10}, pages = {104509}, keywords = {diffusion, Doping, electrical resistivity, Etching, Solar Cells}, pubstate = {published}, tppubtype = {article} } |
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S. Hermann, N. -P. Harder, R. Brendel, D. Herzog, and H. Haferkamp Picosecond laser ablation of SiO2 layers on silicon substrates Artikel 99 (1), 151-158, (2010), ISSN: 1432-0630. Links | BibTeX | Schlagwörter: silicon @article{Hermann2010b,
title = {Picosecond laser ablation of SiO2 layers on silicon substrates}, author = {S Hermann and N -P Harder and R Brendel and D Herzog and H Haferkamp}, doi = {10.1007/s00339-009-5464-z}, issn = {1432-0630}, year = {2010}, date = {2010-04-01}, volume = {99}, number = {1}, pages = {151-158}, keywords = {silicon}, pubstate = {published}, tppubtype = {article} } |
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M. A. Kessler, T. Ohrdes, B. Wolpensinger, and N. -P. Harder Semiconductor Science and Technology 25 (5), 055001, (2010). Links | BibTeX | Schlagwörter: silicon @article{Kessler2010b,
title = {Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr 3 diffusion processes}, author = {M A Kessler and T Ohrdes and B Wolpensinger and N -P Harder}, doi = {10.1088/0268-1242/25/5/055001}, year = {2010}, date = {2010-04-01}, journal = {Semiconductor Science and Technology}, volume = {25}, number = {5}, pages = {055001}, keywords = {silicon}, pubstate = {published}, tppubtype = {article} } |
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S. Steingrube, P. P. Altermatt, J. Schmidt, and R. Brendel Modelling c-Si/SiNx interface recombination by surface damage Artikel physica status solidi (RRL) – Rapid Research Letters 4 (3-4), 91-93, (2010), ISSN: 1862-6270. Links | BibTeX | Schlagwörter: modeling, photoconduction, silicon, Solar Cells @article{Steingrube2010,
title = {Modelling c-Si/SiNx interface recombination by surface damage}, author = {S Steingrube and P P Altermatt and J Schmidt and R Brendel}, doi = {10.1002/pssr.201004023}, issn = {1862-6270}, year = {2010}, date = {2010-04-01}, journal = {physica status solidi (RRL) – Rapid Research Letters}, volume = {4}, number = {3-4}, pages = {91-93}, publisher = {WILEY-VCH Verlag}, keywords = {modeling, photoconduction, silicon, Solar Cells}, pubstate = {published}, tppubtype = {article} } |
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D. Knittel, M. Köntges, F. Heinemeyer, and E. Schollmeyer Journal of Applied Polymer Science 115 (5), 2763-2766, (2010), ISSN: 1097-4628. Links | BibTeX | Schlagwörter: fibers, high performance polymers, photochemistry, surfaces, thin films @article{Knittel2010,
title = {Coatings on textiles for Cu(In,Ga)Se2 photovoltaic cell formation on textile carriers: Preparation of Cu(In,Ga)Se2 solar cells on glass-fiber textiles}, author = {D Knittel and M Köntges and F Heinemeyer and E Schollmeyer}, doi = {10.1002/app.30349}, issn = {1097-4628}, year = {2010}, date = {2010-03-01}, journal = {Journal of Applied Polymer Science}, volume = {115}, number = {5}, pages = {2763-2766}, publisher = {Wiley Subscription Services, Inc., A Wiley Company}, keywords = {fibers, high performance polymers, photochemistry, surfaces, thin films}, pubstate = {published}, tppubtype = {article} } |
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T. Potthoff, K. Bothe, U. Eitner, D. Hinken, and M. Köntges Detection of the voltage distribution in photovoltaic modules by electroluminescence imaging Artikel Progress in Photovoltaics: Research and Applications 18 (2), 100-106, (2010), ISSN: 1099-159X. Links | BibTeX | Schlagwörter: contactless voltage measurement, Electroluminescence, PV Module @article{Potthoff2010,
title = {Detection of the voltage distribution in photovoltaic modules by electroluminescence imaging}, author = {T Potthoff and K Bothe and U Eitner and D Hinken and M Köntges}, doi = {10.1002/pip.941}, issn = {1099-159X}, year = {2010}, date = {2010-03-01}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {18}, number = {2}, pages = {100-106}, publisher = {John Wiley & Sons, Ltd.}, keywords = {contactless voltage measurement, Electroluminescence, PV Module}, pubstate = {published}, tppubtype = {article} } |
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R. Brendel, and M. Ernst Macroporous Si as an absorber for thin-film solar cells Artikel physica status solidi (RRL) – Rapid Research Letters 4 (1-2), 40-42, (2010), ISSN: 1862-6270. Links | BibTeX | Schlagwörter: 72.20.Jv, 81.05.Cy, 81.05.Rm, 81.65.Rv, 82.45.Mp, 84.60.Jt @article{Brendel2010,
title = {Macroporous Si as an absorber for thin-film solar cells}, author = {R Brendel and M Ernst}, doi = {10.1002/pssr.200903372}, issn = {1862-6270}, year = {2010}, date = {2010-02-01}, journal = {physica status solidi (RRL) – Rapid Research Letters}, volume = {4}, number = {1-2}, pages = {40-42}, publisher = {WILEY-VCH Verlag}, keywords = {72.20.Jv, 81.05.Cy, 81.05.Rm, 81.65.Rv, 82.45.Mp, 84.60.Jt}, pubstate = {published}, tppubtype = {article} } |
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E. Garralaga-Rojas, B. Terheiden, H. Plagwitz, J. Hensen, C. Baur, G. F. X. Strobl, and R. Brendel Electrochemistry Communications 12 (2), 231-233, (2010), ISSN: 1388-2481. Links | BibTeX | Schlagwörter: Electrochemistry, photovoltaics, Porous Ge @article{Garralaga-Rojas2010,
title = {Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes}, author = {E Garralaga-Rojas and B Terheiden and H Plagwitz and J Hensen and C Baur and G F X Strobl and R Brendel}, doi = {10.1016/j.elecom.2009.11.033}, issn = {1388-2481}, year = {2010}, date = {2010-02-01}, journal = {Electrochemistry Communications}, volume = {12}, number = {2}, pages = {231-233}, keywords = {Electrochemistry, photovoltaics, Porous Ge}, pubstate = {published}, tppubtype = {article} } |
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S. Steingrube, D. S. Steingrube, R. Brendel, and P. P. Altermatt Comprehensive model for recombination at a-Si:H/c-Si interfaces based on amphoteric defects Artikel physica status solidi (c) 7 (2), 276-279, (2010), (Special Issue: 12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12)). Links | BibTeX | Schlagwörter: silicon @article{Steingrube2010d,
title = {Comprehensive model for recombination at a-Si:H/c-Si interfaces based on amphoteric defects}, author = {S Steingrube and D S Steingrube and R Brendel and P P Altermatt}, doi = {10.1002/pssc.200982486}, year = {2010}, date = {2010-02-01}, journal = {physica status solidi (c)}, volume = {7}, number = {2}, pages = {276-279}, note = {Special Issue: 12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12)}, keywords = {silicon}, pubstate = {published}, tppubtype = {article} } |