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2020

J. Schmidt, K. Bothe, V. V. Voronkov, and R. Falster

Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon Artikel

physica status solidi (b) 257 (1), 1900167, (2020).

Abstract | Links | BibTeX | Schlagwörter: defects, Lifetime, light-induced degradation (LID), recombination, silicon

2017

B. Min, J. Krügener, M. Müller, K. Bothe, and R. Brendel

Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2 Artikel

Energy Procedia 124 (Supplement C), 126-130, (2017), ISSN: 1876-6102, (7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany).

Abstract | Links | BibTeX | Schlagwörter: emitter, junction formation, passivation, recombination

M. Rienäcker, M. Bossmeyer, A. Merkle, U. Römer, F. Haase, J. Krügener, R. Brendel, and R. Peibst

Junction resistivity of carrier-selective polysilicon on oxide junctions and its impact on solar cell performance Artikel

IEEE Journal of Photovoltaics 7 (1), 11-18, (2017), ISSN: 2156-3381.

Abstract | Links | BibTeX | Schlagwörter: Aluminum, Back-junction back-contact (BJBC) cells, boron, Conductivity, contact resistivity, Current density, Junctions, Photovoltaic cells, polysilicon, polysilicon on oxide (POLO) junctions, recombination, selective contacts, selectivity

2016

M. Rienäcker, A. Merkle, U. Römer, H. Kohlenberg, J. Krügener, R. Brendel, and R. Peibst

Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities Artikel

Energy Procedia 92 , 412-418, (2016), ISSN: 1876-6102, (Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)).

Abstract | Links | BibTeX | Schlagwörter: back junction back contact solar cell, junction, POLO, polysilicon on oxide junctions, recombination, trench isolation

2015

B. Min, H. Wagner, M. Müller, D. -H. Neuhaus, and P. P. Altermatt

Incremental efficiency improvements of mass-produced PERC cells up to 24%, predicted solely with continuous development of existing technologies and wafer materials Inproceedings

WIP (Hrsg.): Proceedings of the 31st European Photovoltaic Solar Energy Conference, 473-476, Hamburg, Germany, (2015), ISBN: 3-936338-39-6.

Links | BibTeX | Schlagwörter: c-Si, Modelling / Modeling, PERC, recombination, Selective Emitter

2014

B. Min, H. Wagner, A. Dastgheib-Shirazi, and P. P. Altermatt

Limitation of Industrial Phosphorus-diffused Emitters by SRH Recombination Artikel

Energy Procedia 55 , 115-120, (2014), ISSN: 1876-6102, (Proceedings of the 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014)).

Links | BibTeX | Schlagwörter: emitter, phosphorus precipitates, recombination, silicon solar cells

U. Römer, A. Merkle, R. Peibst, T. Ohrdes, B. Lim, J. Krügener, and R. Brendel

Ion-implanted poly-Si/ c-Si junctions as a back-surface field in back junction back contacted solar cells Inproceedings

WIP (Hrsg.): Proceedings of the 29th European Photovoltaic Solar Energy Conference, 1107-1110, Amsterdam, The Netherlands, (2014), ISBN: 3-936338-34-5.

Links | BibTeX | Schlagwörter: back contact, back junction, Passivated Contact, recombination, solar cell

B. Lim, T. Brendemühl, M. Berger, A. Christ, and T. Dullweber

n-PERT backjunction solar cells: an option for the next industrial technology generation? Inproceedings

WIP (Hrsg.): Proceedings of the 29th European Photovoltaic Solar Energy Conference, 661-665, Amsterdam, The Netherlands, (2014), ISBN: 3-936338-34-5.

Links | BibTeX | Schlagwörter: n-Type, recombination, Silicon Solar Cell(s)

B. Min, H. Wagner, A. Dastgheib-Shirazi, A. Kimmerle, H. Kurz, and P. P. Altermatt

Heavily doped Si:P emitters of crystalline Si solar cells: recombination due to phosphorus precipitation Artikel

physica status solidi (RRL) – Rapid Research Letters 8 (8), 680-684, (2014).

Links | BibTeX | Schlagwörter: emitters, Phosphorus, precipitates, recombination, silicon, Solar Cells

J. D. Murphy, R. E. McGuire, K. Bothe, V. V. Voronkov, and R. Falster

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation Artikel

Solar Energy Materials and Solar Cells 120 (Part A), 402-411, (2014).

Links | BibTeX | Schlagwörter: Lifetime, Oxide precipitate, photovoltaic, recombination, silicon

2013

K. R. McIntosh, P. P. Altermatt, T. J. Ratcliff, K. C. Fong, L. E. Black, S. C. Baker-Finch, and M. D. Abbott

An examination of three common assumptions used to simulate recombination in heavily doped silicon Inproceedings

WIP (Hrsg.): Proceedings of the 28th European Photovoltaic Solar Energy Conference, 1672-1679, Paris, France, (2013), ISBN: 3-936338-33-7.

Links | BibTeX | Schlagwörter: recombination, Simulation, Software

2012

A. R. Peaker, V. P. Markevich, B. Hamilton, G. Parada, A. Dudas, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon, and G. Rozgonyi

Recombination via point defects and their complexes in solar silicon Artikel

physica status solidi (a) 209 (10), 1884-1893, (2012).

Links | BibTeX | Schlagwörter: Laplace deep level transient spectroscopy, minority carrier lifetime, passivation, recombination, silicon solar cells, transition metals

H. Hannebauer, M. Sommerfeld, J. Müller, T. Dullweber, and R. Brendel

Analysis of the emitter saturation current density of industrial type silver screen-printed front contacts Inproceedings

WIP (Hrsg.): Proceedings of the 27th European Photovoltaic Solar Energy Conference, 1360-1363, Frankfurt, Germany, (2012), ISBN: 3-936338-28-0.

Links | BibTeX | Schlagwörter: Lifetime, recombination, Screen printing, Selective Emitter

2011

B. Lim, K. Bothe, V. Voronkov, R. Falster, and J. Schmidt

Light-Induced Degradation of the Carrier Lifetime in n-Type Czochralski-Grown Silicon Doped with Boron and Phosphorus Inproceedings

WIP (Hrsg.): 26th European Photovoltaic Solar Energy Conference and Exhibition, 944-948, Hamburg, Germany, (2011), ISBN: 3-936338-27-2.

Links | BibTeX | Schlagwörter: boron, Czochralski silicon, Lifetime, Phosphorus, recombination

J. D. Murphy, K. Bothe, R. Krain, M. Olmo, V. V. Voronkov, and R. J. Falster

Recombination at Oxide Precipitates in Silicon Inproceedings

Gettering and Defect Engineering in Semiconductor Technology XIV, 205-210, Trans Tech Publications, (2011).

Links | BibTeX | Schlagwörter: Capture Coefficient, Cross-Section, Lifetime, Oxide, Precipitate, recombination, silicon

D. Macdonald, A. Liu, A. Cuevas, B. Lim, and J. Schmidt

The impact of dopant compensation on the boron–oxygen defect in p- and n-type crystalline silicon Artikel

physica status solidi (a) 208 (3), 559-563, (2011), ISSN: 1862-6319.

Links | BibTeX | Schlagwörter: boron–oxygen defect, compensation, recombination, silicon

2010

S. Steingrube, P. P. Altermatt, D. Zielke, F. Werner, J. Schmidt, and R. Brendel

Reduced Passivation of Silicon Surfaces at Low Injection Densities Caused by H-Induced Defects Inproceedings

WIP (Hrsg.): 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 1748-1754, Valencia, Spain, (2010), ISBN: 3-936338-26-4.

Links | BibTeX | Schlagwörter: modeling, Modelling, passivation, recombination

B. Lim, A. Liu, F. Rougieux, D. Macdonald, K. Bothe, and J. Schmidt

Boron-Oxygen-Related Recombination Centers in Compensated Silicon Inproceedings

WIP (Hrsg.): 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 1205-1209, Valencia, Spain, (2010), ISBN: 3-936338-26-4.

Links | BibTeX | Schlagwörter: boron, Czochralski silicon, Lifetime, Phosphorus, recombination

2009

D. Macdonald, A. Liu, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. DiSabatino, and L. J. Geerligs

Boron-Oxygen Defects in Compensated p-Type Czochralski Silicon Inproceedings

WIP (Hrsg.): 24th European Photovoltaic Solar Energy Conference, 877-882, Hamburg, Germany, (2009), ISBN: 3-936338-25-6.

Links | BibTeX | Schlagwörter: Czochralski silicon, defects, recombination

R. Krain, S. Herlufsen, and J. Schmidt

Low-Temperature Gettering of Iron in Mono- and Multicrystalline Silicon Inproceedings

WIP (Hrsg.): 24th European Photovoltaic Solar Energy Conference, 965-968, Hamburg, Germany, (2009), ISBN: 3-936338-25-6.

Links | BibTeX | Schlagwörter: Iron, recombination, silicon

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