@inproceedings{VanSant2018,
title = {HVPE-Grown GaAs//Si Tandem Device Performance},
author = {K VanSant and J Simon and M Schnabel and J Geisz and K Schulte and A Ptak and M Young and D Guiling and W Olavarria and M Rienaecker and H Schulte-Huxel and R Niepelt and S Kajari-Schroeder and R Brendel and R Peibst and A Tamboli},
editor = {IEEE},
doi = {10.1109/PVSC.2018.8547889},
issn = {0160-8371},
year = {2018},
date = {2018-06-01},
booktitle = {2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC 34th EU PVSEC)},
pages = {2776-2778},
address = {Waikoloa Village, HI, USA },
abstract = {The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.},
keywords = {HVPE, MOCVD, multi-junction solar cells, Photovoltaic cells, solar energy, tandems},
pubstate = {published},
tppubtype = {inproceedings}
}