Veröffentlichungen
2016 |
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V. Steckenreiter, J. Hensen, A. Knorr, R. Niepelt, R. Brendel, and S. Kajari-Schröder Thermomechanical Spalling of Epitaxially Grown Silicon from Porosified Substrates Artikel Energy Procedia 92 , 873-879, (2016), ISSN: 1876-6102, (Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)). Abstract | Links | BibTeX | Schlagwörter: Carrier lifetime, exfoliation, kerf-free, layer transfer, spalling, stress-indusing layer @article{Steckenreiter2016c,
title = {Thermomechanical Spalling of Epitaxially Grown Silicon from Porosified Substrates}, author = {V Steckenreiter and J Hensen and A Knorr and R Niepelt and R Brendel and S Kajari-Schröder}, doi = {10.1016/j.egypro.2016.07.096}, issn = {1876-6102}, year = {2016}, date = {2016-08-01}, journal = {Energy Procedia}, volume = {92}, pages = {873-879}, abstract = {We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling by a stress-inducing layer. For this, we deposit an Al stressor layer on top of an epitaxially grown silicon layer. A porous double layer underneath the epitaxial layer serves as determined breaking point. We directionally heat this sample stack and cool it afterwards for controlled spalling of the epitaxial layer from the substrate. We achieve a lift-off rate of 34 out of 36 detached samples. The porous silicon layer enables a smooth surface of the detached epitaxial layer and the remaining substrate. Compared to our standard spalling process the thickness variation of the detached layers is significantly reduced from ≤ 25 μm to less than 2 μm. Furthermore we show that the lifetime of the detached epitaxial layers does not suffer from the Al deposition and the lift-off process.}, note = {Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)}, keywords = {Carrier lifetime, exfoliation, kerf-free, layer transfer, spalling, stress-indusing layer}, pubstate = {published}, tppubtype = {article} } We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling by a stress-inducing layer. For this, we deposit an Al stressor layer on top of an epitaxially grown silicon layer. A porous double layer underneath the epitaxial layer serves as determined breaking point. We directionally heat this sample stack and cool it afterwards for controlled spalling of the epitaxial layer from the substrate. We achieve a lift-off rate of 34 out of 36 detached samples. The porous silicon layer enables a smooth surface of the detached epitaxial layer and the remaining substrate. Compared to our standard spalling process the thickness variation of the detached layers is significantly reduced from ≤ 25 μm to less than 2 μm. Furthermore we show that the lifetime of the detached epitaxial layers does not suffer from the Al deposition and the lift-off process.
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2014 |
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R. Niepelt, J. Hensen, A. Knorr, V. Steckenreiter, S. Kajari-Schröder, and R. Brendel High-quality Exfoliated Crystalline Silicon Foils for Solar Cell Applications Artikel Energy Procedia 55 , 570-577, (2014), ISSN: 1876-6102, (Proceedings of the 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014)). Links | BibTeX | Schlagwörter: Carrier lifetime, exfoliation, kerf-free, layer transfer, photovoltaic, spalling, wafering @article{NIEPELT2014570,
title = {High-quality Exfoliated Crystalline Silicon Foils for Solar Cell Applications}, author = {R Niepelt and J Hensen and A Knorr and V Steckenreiter and S Kajari-Schröder and R Brendel}, doi = {10.1016/j.egypro.2014.08.028}, issn = {1876-6102}, year = {2014}, date = {2014-09-19}, journal = {Energy Procedia}, volume = {55}, pages = {570-577}, note = {Proceedings of the 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014)}, keywords = {Carrier lifetime, exfoliation, kerf-free, layer transfer, photovoltaic, spalling, wafering}, pubstate = {published}, tppubtype = {article} } |
2013 |
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M. Ernst, H. Schulte-Huxel, R. Niepelt, S. Kajari-Schröder, and R. Brendel Thin Crystalline Macroporous Silicon Solar Cells with Ion Implanted Emitter Artikel Energy Procedia 38 , 910-918, (2013), ISSN: 1876-6102, (Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)). Links | BibTeX | Schlagwörter: Ion implantation, kerf-free, layer transfer, macroporous silicon, thin films. @article{ERNST2013910,
title = {Thin Crystalline Macroporous Silicon Solar Cells with Ion Implanted Emitter}, author = {M Ernst and H Schulte-Huxel and R Niepelt and S Kajari-Schröder and R Brendel}, doi = {10.1016/j.egypro.2013.07.364}, issn = {1876-6102}, year = {2013}, date = {2013-09-05}, journal = {Energy Procedia}, volume = {38}, pages = {910-918}, note = {Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)}, keywords = {Ion implantation, kerf-free, layer transfer, macroporous silicon, thin films.}, pubstate = {published}, tppubtype = {article} } |
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S. Schäfer, M. Ernst, S. Kajari-Schröder, and R. Brendel Multilayer Etching for Kerf-free Solar Cells from Macroporous Silicon Artikel Energy Procedia 38 , 933-941, (2013), ISSN: 1876-6102, (Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)). Links | BibTeX | Schlagwörter: kerf-free, layer transfer, macroporous silicon, thin films. @article{SCHAFER2013933,
title = {Multilayer Etching for Kerf-free Solar Cells from Macroporous Silicon}, author = {S Schäfer and M Ernst and S Kajari-Schröder and R Brendel}, doi = {10.1016/j.egypro.2013.07.367}, issn = {1876-6102}, year = {2013}, date = {2013-09-05}, journal = {Energy Procedia}, volume = {38}, pages = {933-941}, note = {Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)}, keywords = {kerf-free, layer transfer, macroporous silicon, thin films.}, pubstate = {published}, tppubtype = {article} } |
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M. Ernst, and R. Brendel Macroporous Silicon Solar Cells With an Epitaxial Emitter Artikel IEEE Journal of Photovoltaics 3 (2), 723-729, (2013). Links | BibTeX | Schlagwörter: Epitaxial growth, Epitaxial layers, Epitaxy, Etching, kerf-free, layer transfer, macroporous silicon, Photovoltaic cells, Resistance, silicon, thin films @article{Ernst2013b,
title = {Macroporous Silicon Solar Cells With an Epitaxial Emitter}, author = {M Ernst and R Brendel}, doi = {10.1109/JPHOTOV.2013.2247094}, year = {2013}, date = {2013-04-01}, journal = {IEEE Journal of Photovoltaics}, volume = {3}, number = {2}, pages = {723-729}, keywords = {Epitaxial growth, Epitaxial layers, Epitaxy, Etching, kerf-free, layer transfer, macroporous silicon, Photovoltaic cells, Resistance, silicon, thin films}, pubstate = {published}, tppubtype = {article} } |
2012 |
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M. Ernst, R. Brendel, R. Ferre, N. -P. Harder, and S. Kajari-Schröder Macroporous silicon as an absorber for thin heterojunction solar cells Inproceedings IEEE (Hrsg.): 2012 38th IEEE Photovoltaic Specialists Conference, 001040-001045, Austin, TX, USA, (2012), ISBN: 978-1-4673-0064-3. Links | BibTeX | Schlagwörter: Arrays, Epitaxial growth, free standing, heterojunctions, Indexes, kerf-free, layer transfer, Light emitting diodes, macroporous silicon, monocrystalline, Optical films, Porous Silicon, Radiation detectors, silicon, thin-film silicon @inproceedings{Ernst2012,
title = {Macroporous silicon as an absorber for thin heterojunction solar cells}, author = {M Ernst and R Brendel and R Ferre and N -P Harder and S Kajari-Schröder}, editor = {IEEE}, doi = {10.1109/PVSC.2012.6317781}, isbn = {978-1-4673-0064-3}, year = {2012}, date = {2012-06-01}, booktitle = {2012 38th IEEE Photovoltaic Specialists Conference}, pages = {001040-001045}, address = {Austin, TX, USA}, keywords = {Arrays, Epitaxial growth, free standing, heterojunctions, Indexes, kerf-free, layer transfer, Light emitting diodes, macroporous silicon, monocrystalline, Optical films, Porous Silicon, Radiation detectors, silicon, thin-film silicon}, pubstate = {published}, tppubtype = {inproceedings} } |
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J. H. Petermann, D. Zielke, J. Schmidt, F. Haase, E. Garralaga-Rojas, and R. Brendel 19%-efficient and 43 µm-thick crystalline Si solar cell from layer transfer using porous silicon* Artikel Progress in Photovoltaics: Research and Applications 20 (1), 1-5, (2012). Links | BibTeX | Schlagwörter: crystalline Si, free standing, kerf-free, layer transfer, Porous Silicon, thin film @article{Petermann2012b,
title = {19%-efficient and 43 µm-thick crystalline Si solar cell from layer transfer using porous silicon*}, author = {J H Petermann and D Zielke and J Schmidt and F Haase and E Garralaga-Rojas and R Brendel}, doi = {10.1002/pip.1129}, year = {2012}, date = {2012-01-01}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {20}, number = {1}, pages = {1-5}, keywords = {crystalline Si, free standing, kerf-free, layer transfer, Porous Silicon, thin film}, pubstate = {published}, tppubtype = {article} } |