1.
B Min; V Mertens; Y Larionova; T Pernau; H Haverkamp; T Dullweber; R Peibst; R Brendel
In: Progress in Photovoltaics: Research and Applications, Bd. 33, Nr. 1, S. 236-244, 2025.
@article{Min2024b,
title = {24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial-scale direct plasma-enhanced chemical vapor deposition system},
author = {B Min and V Mertens and Y Larionova and T Pernau and H Haverkamp and T Dullweber and R Peibst and R Brendel},
doi = {10.1002/pip.3828},
year = {2025},
date = {2025-01-01},
urldate = {2025-01-01},
journal = {Progress in Photovoltaics: Research and Applications},
volume = {33},
number = {1},
pages = {236-244},
abstract = {An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma-enhanced chemical vapor deposition (PECVD) system with low-frequency (LF) plasma source for the surface passivation of undiffused textured p-type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high-quality LF-PECVD AlOx/SiNy passivation stack on undiffused textured p-type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p-type back junction solar cells featuring a poly-Si-based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open-circuit voltage of 725 mV on a M2-sized Ga-doped p-type Czochralski-grown Si wafer as independently confirmed by ISFH CalTeC.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma-enhanced chemical vapor deposition (PECVD) system with low-frequency (LF) plasma source for the surface passivation of undiffused textured p-type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high-quality LF-PECVD AlOx/SiNy passivation stack on undiffused textured p-type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p-type back junction solar cells featuring a poly-Si-based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open-circuit voltage of 725 mV on a M2-sized Ga-doped p-type Czochralski-grown Si wafer as independently confirmed by ISFH CalTeC.
2.
B Min; N Wehmeier; T Brendemuehl; A Merkle; F Haase; Y Larionova; L David; H Schulte-Huxel; R Peibst; R Brendel
In: Solar RRL, Bd. 4, Nr. 12, S. 2000435, 2020.
@article{Min2020b,
title = {A 22.3% Efficient p-Type Back Junction Solar Cell with an Al-Printed Front-Side Grid and a Passivating n+-Type Polysilicon on Oxide Contact at the Rear Side},
author = {B Min and N Wehmeier and T Brendemuehl and A Merkle and F Haase and Y Larionova and L David and H Schulte-Huxel and R Peibst and R Brendel},
doi = {10.1002/solr.202000435},
year = {2020},
date = {2020-12-01},
journal = {Solar RRL},
volume = {4},
number = {12},
pages = {2000435},
abstract = {The fabrication of a silicon solar cell on 6 in. pseudo-square p-type Czochralski grown silicon wafers featuring poly-Si-based passivating contacts for electrons at the cell rear side and screen-printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n+-poly-Si/Al2O3/SiNx layer system, contacted by screen-printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open-circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The fabrication of a silicon solar cell on 6 in. pseudo-square p-type Czochralski grown silicon wafers featuring poly-Si-based passivating contacts for electrons at the cell rear side and screen-printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n+-poly-Si/Al2O3/SiNx layer system, contacted by screen-printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open-circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.