@article{Folchert2020,

title = {Modeling recombination and contact resistance of poly-Si junctions},

author = {N Folchert and R Peibst and R Brendel},

doi = {10.1002/pip.3327},

year  = {2020},

date = {2020-12-01},

journal = {Progress in Photovoltaics: Research and Applications},

volume = {28},

number = {12},

pages = {1289-1307},

abstract = {We present a semi-analytical model for the calculation of the current through and the recombination in carrier-selective junctions consisting of a poly-Si/SiOx/c-Si layer stack. We calculate the recombination parameter J0 and the contact resistance ρC after solving the band-bending-problem on both sides of the interfacial oxide. Comparisons with finite-element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime-, current-voltage- and capacitance-voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J0 and ρC of our state-of-the-art poly-silicon-on-oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly-Si based junctions.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Čampa2019,

title = {Detailed Analysis and Understanding of the Transport Mechanism of Poly-Si-Based Carrier Selective Junctions},

author = {A Čampa and F Smole and N Folchert and T Wietler and B Min and R Brendel and M Topič},

doi = {10.1109/JPHOTOV.2019.2943610},

year  = {2019},

date = {2019-11-01},

journal = {IEEE Journal of Photovoltaics},

volume = {9},

number = {6},

pages = {1575-1582},

abstract = {We investigate the transport mechanism of poly-Si-based carrier-selective junctions using the two-dimensional numerical semiconductor device simulations. The detailed transport model considers the charge carrier transport through the pinholes as well as tunneling through a very thin silicon oxide simultaneously. For the verification of the simulation model, the complete temperature dependent transfer length method is modeled and its results are verified with measurements of two different samples. By means of rigorous simulations, the influence of different pinhole geometrical and material parameters on junction resistivity are investigated and explained in detail. From the presented results, the fundamental understanding needed for optimizing the poly-Si-based carrier selective junction in respect to the main design parameters such as doping level in poly-Si, annealing time, silicon oxide thickness, and pinhole density is given. The detailed analysis shows the pinhole channel plays the most crucial role in the design of poly-Si-based carrier-selective junctions if the silicon oxide layer thickness is larger than 2 nm.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Folchert2018b,

title = {Temperature-dependent contact resistance of carrier selective Poly-Si on oxide junctions},

author = {N Folchert and M Rienäcker and A A Yeo and B Min and R Peibst and R Brendel},

doi = {10.1016/j.solmat.2018.05.046},

issn = {0927-0248},

year  = {2018},

date = {2018-10-01},

journal = {Solar Energy Materials and Solar Cells},

volume = {185},

pages = {425-430},

abstract = {Abstract Carrier selective junctions using a poly-silicon/ silicon oxide stack on crystalline silicon feature low recombination currents J0 whilst allowing for low contact resistivity ρ C . We describe the limiting current transport mechanism as a combination of homogeneous tunneling through the interfacial silicon oxide layer and transport through pinholes where the interfacial silicon oxide layer is locally disrupted. We present an experimental method and its theoretical basis to discriminate between homogenous tunneling and local pinhole transport mechanisms on n + /n or p + /p junctions by measuring the temperature-dependent contact resistance. Theory predicts opposing trends for the temperature dependencies of tunneling and pinhole transport. This allows identifying the dominant transport path. For the contact resistance of two differently prepared poly-Si/ silicon oxide/ c-Si junctions we either find clear pinhole-type or clear tunneling-type temperature dependence. Pinhole transport contributes more than 94 % to the total current for the sample with a 2.1 nm-thick interfacial silicon oxide that we anneal at a temperature of 1050 °C to achieve highest selectivity. In contrast pinhole transport contributes less than 35 % to the total current for the sample with a 1.7 nm-thick silicon oxide that we annealed at only 700 °C in order to avoid pinholes.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Mäckel2015,

title = {Current Transport Through Lead-Borosilicate Interfacial Glass Layers at the Screen-Printed Silver-Silicon Front Contact},

author = {H Mäckel and P P Altermatt},

doi = {10.1109/JPHOTOV.2015.2409561},

issn = {2156-3381},

year  = {2015},

date = {2015-07-01},

journal = {IEEE Journal of Photovoltaics},

volume = {5},

number = {4},

pages = {1034-1046},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Peibst2014b,

title = {A simple model describing the symmetric IV characteristics of p polycrystalline Si/n monocrystalline Si and n polycrystalline Si/p monocrystalline Si junctions},

author = {R Peibst and U Römer and K R Hofmann and B Lim and T F Wietler and J Krügener and N -P Harder and R Brendel},

doi = {10.1109/JPHOTOV.2014.2310740},

year  = {2014},

date = {2014-05-01},

journal = {IEEE Journal of Photovoltaics},

volume = {4},

number = {3},

pages = {841-850},

keywords = {},

pubstate = {published},

tppubtype = {article}

}