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2018

B. A. Veith-Wolf, S. Schäfer, R. Brendel, and J. Schmidt

Reassessment of intrinsic lifetime limit in n-type crystalline silicon and implication on maximum solar cell efficiency Artikel

Solar Energy Materials and Solar Cells 186 , 194-199, (2018), ISSN: 0927-0248.

Abstract | Links | BibTeX | Schlagwörter: Aluminum oxide, Auger recombination, charge carrier lifetime, Intrinsic lifetime, silicon, surface passivation

B. Veith-Wolf, R. Witteck, A. Morlier, H. Schulte-Huxel, M. R. Vogt, and J. Schmidt

Spectra-Dependent Stability of the Passivation Quality of Al2O3/c-Si Interfaces Artikel

IEEE Journal of Photovoltaics 8 (1), 96-102, (2018), ISSN: 2156-3381.

Abstract | Links | BibTeX | Schlagwörter: Accelerated testing, Al2O3, Aluminum oxide, Carrier lifetime, crystalline silicon, Degradation, Long-term stability, silicon nitride (SiNx), surface passivation, ultraviolet (UV) stability

2016

B. Veith-Wolf, R. Witteck, A. Morlier, H. Schulte-Huxel, and J. Schmidt

Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces Inproceedings

IEEE (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 1173-1178, Portland, OR, USA, (2016), ISBN: 978-1-5090-2725-5.

Abstract | Links | BibTeX | Schlagwörter: Aluminum oxide, Annealing, Carrier lifetime, crystalline silicon, Degradation, Firing, Glass, Lifetime estimation, Lighting, passivation, silicon nitride, surface passivation, UV stability

M. Ernst, D. Walter, A. Fell, B. Lim, and K. Weber

Efficiency Potential of P-Type Al2O3/SiNx Passivated PERC Solar Cells With Locally Laser-Doped Rear Contacts Artikel

IEEE Journal of Photovoltaics 6 (3), 624-631, (2016), ISSN: 2156-3381.

Abstract | Links | BibTeX | Schlagwörter: Aluminum oxide, device simulation, Laser ablation, laser doping, passivated emitter rear contact

2014

B. Veith, T. Ohrdes, F. Werner, R. Brendel, P. P. Altermatt, N. -P. Harder, and J. Schmidt

Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: an edge effect? Artikel

Solar Energy Materials and Solar Cells 120 (Part A), 436-440, (2014).

Links | BibTeX | Schlagwörter: Aluminum oxide, charge carrier lifetime, modeling, silicon, surface passivation

2012

T. Dullweber, M. Siebert, B. Veith, C. Kranz, J. Schmidt, R. Brendel, B. F. P. Roos, T. Dippell, A. Schwabedissen, and S. Peters

High-efficiency industrial-type PERC solar cells applying ICP AlOx as rear passivation layer Inproceedings

WIP (Hrsg.): Proceedings of the 27th European Photovoltaic Solar Energy Conference, 672-675, Frankfurt, Germany, (2012), ISBN: 3-936338-28-0.

Links | BibTeX | Schlagwörter: AlOx, Aluminum oxide, Inductively-Coupled Plasma CVD, rear passivation, Screen printing, Silicon Solar Cell(s)

B. Veith, T. Dullweber, M. Siebert, C. Kranz, F. Werner, N. -P. Harder, J. Schmidt, B. F. P. Roos, T. Dippell, and R. Brendel

Comparison of ICP-AlOx and ALD-Al2O3 Layers for the Rear Surface Passivation of C-Si Solar Cells Artikel

Energy Procedia 27 , 379-384, (2012), ISSN: 1876-6102, (Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics SiliconPV 2012).

Links | BibTeX | Schlagwörter: Aluminum oxide, silicon, Solar Cells, surface passivation

F. Werner, A. Cosceev, and J. Schmidt

Silicon Surface Passivation by Al2O3: Recombination Parameters and Inversion Layer Solar Cells Artikel

Energy Procedia 27 , 319-324, (2012), ISSN: 1876-6102, (Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics SiliconPV 2012).

Links | BibTeX | Schlagwörter: Aluminum oxide, capture cross section, inversion layer solar cell, passivation

A. Richter, F. Werner, A. Cuevas, J. Schmidt, and S. W. Glunz

Improved Parameterization of Auger Recombination in Silicon Artikel

Energy Procedia 27 , 88-94, (2012), ISSN: 1876-6102, (Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics SiliconPV 2012).

Links | BibTeX | Schlagwörter: Aluminum oxide, Auger recombination, crystalline silicon, Radiative recombination, surface passivation

2011

D. Zielke, J. H. Petermann, F. Werner, B. Veith, R. Brendel, and J. Schmidt

Contact passivation in silicon solar cells using atomic-layer-deposited aluminum oxide layers Artikel

physica status solidi (RRL) – Rapid Research Letters 5 (8), 298-300, (2011), ISSN: 1862-6270.

Links | BibTeX | Schlagwörter: Aluminum oxide, atomic layer deposition, contact passivation, silicon, Solar Cells

F. Werner, W. Stals, R. Görtzen, B. Veith, R. Brendel, and J. Schmidt

High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells Artikel

Energy Procedia 8 , 301-306, (2011), ISSN: 1876-6102, (Proceedings of the SiliconPV 2011 Conference (1st International Conference on Crystalline Silicon Photovoltaics)).

Links | BibTeX | Schlagwörter: Aluminum oxide, silicon, Spatial ALD ;, surface passivation

B. Veith, F. Werner, D. Zielke, R. Brendel, and J. Schmidt

Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon Artikel

Energy Procedia 8 , 307-312, (2011), ISSN: 1876-6102, (Proceedings of the SiliconPV 2011 Conference (1st International Conference on Crystalline Silicon Photovoltaics)).

Links | BibTeX | Schlagwörter: Aluminum oxide, silicon, Solar Cells, surface passivation

R. Brendel, J. Petermann, E. G. Rojas, D. Zielke, J. Schmidt, S. Gatz, and T. Dullweber

High-efficiency cells from layer transfer: A first step towards Si thin-film/wafer hybrid technologies Inproceedings

IEEE (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, 000046, Seattle, WA, USA, (2011), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: Aluminum oxide, Crystallization, Epitaxial growth, Sawing, silicon

B. Vermang, F. Werner, W. Stals, A. Lorenz, A. Rothschild, J. John, J. Poortmans, R. Mertens, R. Gortzen, P. Poodt, F. Roozeboom, and J. Schmidt

Spatially-separated atomic layer deposition of Al2O3, a new option for high-throughput si solar cell passivation Inproceedings

IEEE (Hrsg.): 2011 37th IEEE Photovoltaic Specialists Conference, 001144-001149, Seattle, WA, USA, (2011), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: Aluminum oxide, Films, Inductors, passivation, Photovoltaic cells, silicon

2010

R. Bock, J. Schmidt, S. Mau, B. Hoex, and R. Brendel

The ALU+ Concept: N-Type Silicon Solar Cells With Surface-Passivated Screen-Printed Aluminum-Alloyed Rear Emitter Artikel

IEEE Transactions on Electron Devices 57 (8), 1966-1971, (2010), ISSN: 0018-9383.

Links | BibTeX | Schlagwörter: aluminium oxide, Aluminum oxide, amorphus silicon, atomic layer deposition, Current density, emitter passivation, Etching, metallization, n-type silicon, passivation, Photovoltaic cells, screen-printed emitter, silicon

J. Schmidt, B. Veith, F. Werner, D. Zielke, and R. Brendel

Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks Inproceedings

IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 000885-000890, Honolulu, HI, USA, (2010), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: Aluminum oxide, Films, passivation, Plasma measurements, Plasmas, silicon

2009

R. Bock, J. Schmidt, S. Mau, B. Hoex, E. Kessels, and R. Brendel

The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter Inproceedings

IEEE (Hrsg.): 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 000030-000035, Philadelphia, PA, USA, (2009), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: Aluminum oxide, Amorphous silicon, atomic layer deposition, Chemicals, Current density, passivation, Plasma chemistry, Plasma displays, Silicon compounds, Stability

2008

J. Schmidt, A. Merkle, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, and R. Brendel

Atomic-layer-deposited aluminum oxide for the surface passivation of high-efficiency silicon solar cells Inproceedings

IEEE (Hrsg.): 2008 33rd IEEE Photovoltaic Specialists Conference, 1-5, San Diego, CA, USA, (2008), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: Aluminum oxide, atomic layer deposition, Atomic measurements, Oxidation, passivation, Photovoltaic cells, Plasma measurements, Plasma temperature, Silicon compounds, Velocity measurement

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