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2016

J. Krügener, F. Kiefer, R. Peibst, and H. J. Osten

Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters Inproceedings

IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6.

Abstract | Links | BibTeX | Schlagwörter: Annealing, boron, Current density, Implants, Ion implantation, Ions, Photovoltaic cells

J. Krügener, D. Tetzlaff, Y. Larionova, Y. Barnscheidt, S. Reiter, M. Turcu, R. Peibst, J. -D. Kähler, and T. Wietler

Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells Inproceedings

IEEE (Hrsg.): Proceedings of the 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, (2016), ISBN: 978-1-5090-2025-6.

Abstract | Links | BibTeX | Schlagwörter: Annealing, boron, Conductivity, Junctions, Resistance, silicon, Temperature measurement

B. Veith-Wolf, R. Witteck, A. Morlier, H. Schulte-Huxel, and J. Schmidt

Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces Inproceedings

IEEE (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 1173-1178, Portland, OR, USA, (2016), ISBN: 978-1-5090-2725-5.

Abstract | Links | BibTeX | Schlagwörter: Aluminum oxide, Annealing, Carrier lifetime, crystalline silicon, Degradation, Firing, Glass, Lifetime estimation, Lighting, passivation, silicon nitride, surface passivation, UV stability

J. Krügener, Y. Larionova, B. Wolpensinger, D. Tetzlaff, S. Reiter, M. Turcu, R. Peibst, J. -D. Kähler, and T. Wietler

Dopant diffusion from p+-poly-Si into c-Si during thermal annealing Inproceedings

IEEE (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2451-2454, Portland, OR, USA, (2016), ISBN: 978-1-5090-2725-5.

Abstract | Links | BibTeX | Schlagwörter: Annealing, boron, diffusion, junction formation, Junctions, low pressure chemical vapor deposition, passivating contacts, Resistance, Scanning electron microscopy, silicon, Substrates, Temperature measurement

D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J. -D. Kähler, and T. Wietler

Evolution of oxide disruptions: The (w)hole story about passivating contacts Inproceedings

IEEE (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 0221-0224, Portland, OR, USA, (2016), ISBN: 978-1-5090-2725-5.

Abstract | Links | BibTeX | Schlagwörter: Annealing, junction formation, Junctions, Microscopy, passivating contacts, Photovoltaic cells, Photovoltaic systems, pinholes, polysilicon, silicon, silicon oxide

2015

J. Krügener, R. Peibst, E. Bugiel, D. Tetzlaff, F. Kiefer, M. Jestremski, R. Brendel, and H. J. Osten

Ion implantation of boric molecules for silicon solar cells Artikel

Solar Energy Materials and Solar Cells 142 , 12-17, (2015), (Proceedings of the 5th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2015)).

Links | BibTeX | Schlagwörter: Annealing, BF2, Ion implantation, silicon, Transmission electron microscopy

J. Krügener, R. Peibst, F. A. Wolf, E. Bugiel, T. Ohrdes, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, and H. J. Osten

Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters Artikel

IEEE Journal of Photovoltaics 5 (1), 166-173, (2015).

Links | BibTeX | Schlagwörter: Annealing, boron, crystal defects, Density measurement, Doping, Ion implantation, photovoltaic, rapid thermal annealing (RTA), silicon, Surface texture, Temperature measurement

2014

J. Krügener, E. Bugiel, R. Peibst, F. Kiefer, T. Ohrdes, R. Brendel, and H. J. Osten

Structural investigation of ion implantation of boron on random pyramid textured Si(100) for photovoltaic applications Inproceedings

Proceedings of the 20th International Conference on Ion Implantation Technology (IIT), Portland, OR, USA, (2014), ISBN: 978-1-4799-5213-7.

Links | BibTeX | Schlagwörter: Annealing, crystal defects, Crystals, Ion implantation, Photovoltaic cells, process simulation, silicon, Solar Cells, Surface morphology, Surface texture, Transmission electron microscopy

2013

U. Römer, R. Peibst, T. Ohrdes, Y. Larionova, N. -P. Harder, R. Brendel, A. Grohe, D. Stichtenoth, T. Wütherich, C. Schöllhorn, H. -J. Krokoszinski, and J. Graff

Counterdoping with Patterned Ion Implantation Inproceedings

IEEE (Hrsg.): 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) , 1280-1284, Tampa, FL, USA, (2013), ISBN: 978-1-4799-3299-3.

Links | BibTeX | Schlagwörter: Annealing, boron, Implants, Ion implantation, Photovoltaic cell, Photovoltaic cells, silicon, solar energy, Tunneling, Voltage measurement

2012

J. Müller, K. Bothe, S. Gatz, and R. Brendel

Modeling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum Artikel

physica status solidi (RRL) – Rapid Research Letters 6 (3), 111-113, (2012).

Links | BibTeX | Schlagwörter: Annealing, Doping, metal−semiconductor contacts, silicon, Solar Cells

2011

F. E. Rougieux, B. Lim, J. Schmidt, M. Forster, D. Macdonald, and A. Cuevas

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon Artikel

Journal of Applied Physics 110 (6), 063708, (2011).

Links | BibTeX | Schlagwörter: Annealing, boron, carrier density, Doping, silicon

B. Lim, V. V. Voronkov, R. Falster, K. Bothe, and J. Schmidt

Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process Artikel

Applied Physics Letters 98 (16), 162104, (2011).

Links | BibTeX | Schlagwörter: Annealing, boron, Doping, electron densities of states, silicon

R. Ferré, I. Martín, R. Trassl, R. Alcubilla, and R. Brendel

Simultaneous gettering and emitter formation in multicrystalline-Si wafers by annealing phosphorus doped amorphous silicon compounds Artikel

Applied Physics Letters 98 (2), 022102, (2011).

Links | BibTeX | Schlagwörter: amorphous metals, amorphous semiconductors, Annealing, double layers, silicon

2010

Y. Larionova, N. P. Harder, and R. Brendel

Effect of SiO2 thicknesses in thermal-SiO2/PECVD-SiN stacks on surface passivation of n-type Cz silicon substrates Inproceedings

IEEE (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, 001207-001209, Honolulu, HI, USA, (2010), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: Annealing, Degradation, passivation, silicon, Silicon compounds, Substrates

B. Lim, K. Bothe, and J. Schmidt

Impact of oxygen on the permanent deactivation of boron–oxygen-related recombination centers in crystalline silicon Artikel

Journal of Applied Physics 107 (12), 123707, (2010).

Links | BibTeX | Schlagwörter: Annealing, carrier lifetimes, illumination, interstitial defects, ozone

Y. Larionova, V. Mertens, N. -P. Harder, and R. Brendel

Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks Artikel

Applied Physics Letters 96 (3), 032105, (2010).

Links | BibTeX | Schlagwörter: amorphous semiconductors, Annealing, passivation, silicon, surface passivation

2008

S. Gatz, H. Plagwitz, P. P. Altermatt, B. Terheiden, and R. Brendel

Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells Artikel

Applied Physics Letters 93 (17), 173502, (2008).

Links | BibTeX | Schlagwörter: Annealing, dielectrophoresis, passivation, surface passivation, thermal stability

B. Lim, K. Bothe, and J. Schmidt

Modeling the generation and dissociation of the boron-oxygen complex in B-Doped Cz-Si Inproceedings

IEEE (Hrsg.): 2008 33rd IEEE Photovoltaic Specialists Conference, 1-4, San Diego, CA, USA, (2008), ISSN: 0160-8371.

Links | BibTeX | Schlagwörter: Annealing, charge carrier lifetime, Degradation, Lighting, Photovoltaic cells, Semiconductor device modeling, silicon, Solar power generation, Temperature, Voltage

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