Veröffentlichungen
2016 |
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B. Veith-Wolf, R. Witteck, A. Morlier, H. Schulte-Huxel, and J. Schmidt Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces Inproceedings IEEE (Hrsg.): 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 1173-1178, Portland, OR, USA, (2016), ISBN: 978-1-5090-2725-5. Abstract | Links | BibTeX | Schlagwörter: Aluminum oxide, Annealing, Carrier lifetime, crystalline silicon, Degradation, Firing, Glass, Lifetime estimation, Lighting, passivation, silicon nitride, surface passivation, UV stability @inproceedings{Veith-Wolf2016,
title = {Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces}, author = {B Veith-Wolf and R Witteck and A Morlier and H Schulte-Huxel and J Schmidt}, editor = {IEEE}, doi = {10.1109/PVSC.2016.7749799}, isbn = {978-1-5090-2725-5}, year = {2016}, date = {2016-06-01}, booktitle = {2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)}, journal = {Proceedings of the 43rd IEEE Photovoltaic Specialists Conference}, pages = {1173-1178}, address = {Portland, OR, USA}, abstract = {We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×10^13 cm-2.}, keywords = {Aluminum oxide, Annealing, Carrier lifetime, crystalline silicon, Degradation, Firing, Glass, Lifetime estimation, Lighting, passivation, silicon nitride, surface passivation, UV stability}, pubstate = {published}, tppubtype = {inproceedings} } We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×10^13 cm-2.
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