@inproceedings{Krügener2016b,
title = {Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters},
author = {J Krügener and F Kiefer and R Peibst and H J Osten},
editor = {IEEE},
doi = {10.1109/IIT.2016.7882856},
isbn = {978-1-5090-2025-6},
year = {2016},
date = {2016-09-26},
booktitle = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)},
journal = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)},
address = {Tainan, Taiwan},
abstract = {Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type silicon solar cells. Here, experimental emitter saturation current densities are compared with simulated defect densities, namely boron interstitial clusters and dislocation loops. We report on experimental conditions, which allow separating the specific impact of both defect types on the resulting electrical properties after annealing at 1050°C and surface passivation. In that way, dislocation loops are identified to be the dominating defect species under the used implant and annealing conditions.},
keywords = {Annealing, boron, Current density, Implants, Ion implantation, Ions, Photovoltaic cells},
pubstate = {published},
tppubtype = {inproceedings}
}