1.
R Brendel; C Kruse; A Merkle; R Peibst
Screening Selective Contact Material Combinations for Novel Crystalline Si Cell Structures Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition, S. 39-46, Brussels, Belgium, 2018.
@inproceedings{Brendel2018,
title = {Screening Selective Contact Material Combinations for Novel Crystalline Si Cell Structures},
author = {R Brendel and C Kruse and A Merkle and R Peibst},
editor = {WIP},
doi = {10.4229/35thEUPVSEC20182018-1AO.2.6},
year = {2018},
date = {2018-09-24},
booktitle = {Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition},
pages = {39-46},
address = {Brussels, Belgium},
abstract = {High efficiency crystalline Si solar cells require contacts with high carrier selectivity. This is ensured for contacts having low recombination currents as well as low contact resistances. A large variety of material systems for electron- and hole-selective contacts were measured in the literature. We screen a subset of electron- and hole-selective contacts to find promising combinations in terms of efficiency potential on the one hand and in terms of practical processes on the other hand. We use modelling of ideal Si cells with non-ideal experimental contact properties to determine the maximum efficiency and the optimized areal contact fractions for many contact combinations. Cells using a-Si and/or poly-Si contacts have the highest contact-limited efficiencies. Such cells are, however, quite different from today’s PERC technology. We therefore also look for contact combinations that have one contact type equal to the current PERC technology and identify cell structures that combine a poly-Si(n) contact with a screen-printed Al-doped contacts (PAL cells) as an attractive upgrade for the PERC technology. We also report on experimental work on building blocks for various types of PAL cells.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
High efficiency crystalline Si solar cells require contacts with high carrier selectivity. This is ensured for contacts having low recombination currents as well as low contact resistances. A large variety of material systems for electron- and hole-selective contacts were measured in the literature. We screen a subset of electron- and hole-selective contacts to find promising combinations in terms of efficiency potential on the one hand and in terms of practical processes on the other hand. We use modelling of ideal Si cells with non-ideal experimental contact properties to determine the maximum efficiency and the optimized areal contact fractions for many contact combinations. Cells using a-Si and/or poly-Si contacts have the highest contact-limited efficiencies. Such cells are, however, quite different from today’s PERC technology. We therefore also look for contact combinations that have one contact type equal to the current PERC technology and identify cell structures that combine a poly-Si(n) contact with a screen-printed Al-doped contacts (PAL cells) as an attractive upgrade for the PERC technology. We also report on experimental work on building blocks for various types of PAL cells.
2.
R Peibst; Y Larionova; S Reiter N Orlowski; S Schäfer; M Turcu; B Min; R Brendel; D Tetzlaff; J Krügener; T Wietler; U Höhne; J-D Kähler; H Mehlich; S Frigge
Industrial, Screen-Printed Double-Side Contacted Polo Cells Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition, S. 451-454, Amsterdam, The Netherlands, 2017, ISBN: 3-936338-47-7.
@inproceedings{Peibst2017,
title = {Industrial, Screen-Printed Double-Side Contacted Polo Cells},
author = {R Peibst and Y Larionova and S Reiter N Orlowski and S Schäfer and M Turcu and B Min and R Brendel and D Tetzlaff and J Krügener and T Wietler and U Höhne and J-D Kähler and H Mehlich and S Frigge},
editor = {WIP},
doi = {10.4229/EUPVSEC20172017-2DO.2.2},
isbn = {3-936338-47-7},
year = {2017},
date = {2017-09-28},
booktitle = {Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition},
pages = {451-454},
address = {Amsterdam, The Netherlands},
abstract = {We demonstrate an industrial double-side-contacted, screen-printed large area cell with POLO junctions on both sides and an in-house-measured energy conversion efficiency of 22.3 % (A = 244.15 cm2},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We demonstrate an industrial double-side-contacted, screen-printed large area cell with POLO junctions on both sides and an in-house-measured energy conversion efficiency of 22.3 % (A = 244.15 cm2
3.
T Dullweber; H Schulte-Huxel; C Kranz; S Blankemeyer; U Baumann; R Witteck; R Peibst; M Köntges; R Brendel; Y Yao
Bifacial PERC+ Solar Cells and Modules: An Overview Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition, S. 649-656, Amsterdam, The Netherlands, 2017, ISBN: 3-936338-47-7.
@inproceedings{Dullweber2017,
title = {Bifacial PERC+ Solar Cells and Modules: An Overview},
author = {T Dullweber and H Schulte-Huxel and C Kranz and S Blankemeyer and U Baumann and R Witteck and R Peibst and M Köntges and R Brendel and Y Yao},
editor = {WIP},
doi = {10.4229/EUPVSEC20172017-2AV.2.20},
isbn = {3-936338-47-7},
year = {2017},
date = {2017-09-25},
booktitle = {Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition},
pages = {649-656},
address = {Amsterdam, The Netherlands},
abstract = {Since its first publication in 2015, the PERC+ cell concept has been rapidly adopted by several solar cell manufacturers worldwide. The fast industrial implementation is facilitated by the very similar process technology of bifacial PERC+ cells and main stream monofacial PERC cells. Conversion efficiencies of industrial PERC+ solar cells up to 21.6% with front side illumination and 17.3% with rear side illumination were reported. Meanwhile, four companies are offering commercial bifacial PERC+ modules with maximum rating power around 300 Wp when illuminated from the front side, only. These modules apply 60 PERC+ cells with 4 or 5 busbars, which are interconnected by conventional stringing and tabbing technology. First small scale outdoor installations verify an increase of the energy yield relative to monofacial PERC modules between 13% and 22%. Two large scale out door installations with 2 MWp and 20 MWp are under construction in Taiwan and China, respectively. We report for the first time in detail on a novel bifacial PERC+ prototype module by applying the Smart Wire Connection Technology. We interconnect 18 halved PERC+ solar cells by soldering 18 wires directly to the Ag front and Al rear fingers. The resulting prototype module exhibits independently confirmed front and rear side efficiencies of 19.8% and 16.4%, respectively. Additionally, Meyer Burger certified a full-size PERC+ SWCT module according to the IEC 61215 norm thereby demonstrating the long term reliability of this novel module technology.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
Since its first publication in 2015, the PERC+ cell concept has been rapidly adopted by several solar cell manufacturers worldwide. The fast industrial implementation is facilitated by the very similar process technology of bifacial PERC+ cells and main stream monofacial PERC cells. Conversion efficiencies of industrial PERC+ solar cells up to 21.6% with front side illumination and 17.3% with rear side illumination were reported. Meanwhile, four companies are offering commercial bifacial PERC+ modules with maximum rating power around 300 Wp when illuminated from the front side, only. These modules apply 60 PERC+ cells with 4 or 5 busbars, which are interconnected by conventional stringing and tabbing technology. First small scale outdoor installations verify an increase of the energy yield relative to monofacial PERC modules between 13% and 22%. Two large scale out door installations with 2 MWp and 20 MWp are under construction in Taiwan and China, respectively. We report for the first time in detail on a novel bifacial PERC+ prototype module by applying the Smart Wire Connection Technology. We interconnect 18 halved PERC+ solar cells by soldering 18 wires directly to the Ag front and Al rear fingers. The resulting prototype module exhibits independently confirmed front and rear side efficiencies of 19.8% and 16.4%, respectively. Additionally, Meyer Burger certified a full-size PERC+ SWCT module according to the IEC 61215 norm thereby demonstrating the long term reliability of this novel module technology.
4.
R Brendel; M Rienaecker; R Peibst
A quantitative measure for the carrier selectivity of contacts to solar cells Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, S. 447-451, Munich, Germany, 2016, ISBN: 3-936338-41-8.
@inproceedings{Brendel2016,
title = {A quantitative measure for the carrier selectivity of contacts to solar cells},
author = {R Brendel and M Rienaecker and R Peibst},
editor = {WIP},
doi = {10.4229/EUPVSEC20162016-2CO.4.1},
isbn = {3-936338-41-8},
year = {2016},
date = {2016-09-01},
booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
pages = {447-451},
address = {Munich, Germany},
abstract = {We discuss a physically motivated definition for a quantitative measure of the selectivity of electron and hole contacts. We define the selectivity S10 = log10(Vth /(c ×Jc)) to depend on the contact resistance c, the recombination current density Jc of the contact, and the thermal voltage Vth. A high selectivity relies on a highly asymmetric equilibrium carrier concentration of majority and minority carriers in the contact. The maximum efficiency max increases with the selectivity S10. This increase is linear until the efficiency starts to be limited by radiative recombination. We give analytic equations for calculating the maximum efficiency max(S10) of a crystalline Si cell that is ideal except for either one or two contacts. Achieving the maximum efficiency max requires optimized areal fractions fe,max and fh,max for the electron and the hole contacts, respectively . We give analytic equations for these contact fractions.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We discuss a physically motivated definition for a quantitative measure of the selectivity of electron and hole contacts. We define the selectivity S10 = log10(Vth /(c ×Jc)) to depend on the contact resistance c, the recombination current density Jc of the contact, and the thermal voltage Vth. A high selectivity relies on a highly asymmetric equilibrium carrier concentration of majority and minority carriers in the contact. The maximum efficiency max increases with the selectivity S10. This increase is linear until the efficiency starts to be limited by radiative recombination. We give analytic equations for calculating the maximum efficiency max(S10) of a crystalline Si cell that is ideal except for either one or two contacts. Achieving the maximum efficiency max requires optimized areal fractions fe,max and fh,max for the electron and the hole contacts, respectively . We give analytic equations for these contact fractions.
5.
R Peibst; Y Larionova; S Reiter; M Turcu; R Brendel; D Tetzlaff; J Krügener; T Wietler; U Höhne; J -D Kähler; H Mehlich; S Frigge
Implementation of n+ and p+ poly junctions on front and rear side of double-side-contacted industrial silicon solar cells Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, S. 323-327, Munich, Germany, 2016, ISBN: 3-936338-41-8.
@inproceedings{Peibst2016,
title = {Implementation of n+ and p+ poly junctions on front and rear side of double-side-contacted industrial silicon solar cells},
author = {R Peibst and Y Larionova and S Reiter and M Turcu and R Brendel and D Tetzlaff and J Krügener and T Wietler and U Höhne and J -D Kähler and H Mehlich and S Frigge},
editor = {WIP},
doi = {10.4229/EUPVSEC20162016-2BO.3.2},
isbn = {3-936338-41-8},
year = {2016},
date = {2016-09-01},
booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
pages = {323-327},
address = {Munich, Germany},
abstract = {We present building blocks for double-side contacted cells with poly-Si on passivating interfacial oxides (POLO) junctions for both polarities, fabricated by a lean process flow. For this purpose, we evaluate p+ and n+ POLO junctions utilizing ~1.7 nm thin wet chemically grown (ozone diluted in di-ionized water) and ozone grown interfacial oxides on different surface morphologies. We achieve excellent passivation quality on damaged etched (100) surfaces with record low J0 values of 0.6 fA/cm2 (implied open circuit voltage Voc,impl 748 mV) for n+ POLO junctions and of 5 fA/cm2 (Voc,impl 729 mV) for p+ POLO junctions. However, on alkaline textured surfaces, ~6 times higher J0 values are obtained. We compare ex-situ-doped poly-Si (intrinsically deposited and subsequently ion implanted) with in-situ-doped poly-Si layers. For POLO junctions formed on textured surfaces by utilizing wet chemical oxides and low-pressure chemical vapor deposition (LP-CVD) of 20 nm in-situ n+-doped poly-Si, we obtain J0 values down to 2.4 fA/cm2. Also with plasma-enhanced chemical vapor deposition (PE-CVD) of in-situ-doped amorphous Si and subsequent crystallization, we obtain comparable results. A transparent conductive oxide (TCO), preferably temperature stable, seems to be required to support the limited lateral conductivity of POLO junctions with poly-Si layer thicknesses ≤ 20 nm. We find that the conductivity of indium tin oxide (ITO) strongly decreases upon firing, while the initial conductivity can be maintained even for firing temperatures of 800°C when capping the ITO with a thin SiNx layer. Our recent cell precursors (156 mm 156 mm Cz n-type wafers with an n+ POLO junction on an alkaline textured front-side and a p+ POLO junction on a damage-etched rear-side) exhibit a promising Voc,impl value of 732 mV, and a total J0 value of the doped surfaces of 12 fA/cm2. In combination with the high pseudo fill factor of 85.3 % and with a short-circuit current density of 40 mA/cm2 as calculated by ray tracing simulations, the corresponding pseudo efficiency is 25.0 %.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We present building blocks for double-side contacted cells with poly-Si on passivating interfacial oxides (POLO) junctions for both polarities, fabricated by a lean process flow. For this purpose, we evaluate p+ and n+ POLO junctions utilizing ~1.7 nm thin wet chemically grown (ozone diluted in di-ionized water) and ozone grown interfacial oxides on different surface morphologies. We achieve excellent passivation quality on damaged etched (100) surfaces with record low J0 values of 0.6 fA/cm2 (implied open circuit voltage Voc,impl 748 mV) for n+ POLO junctions and of 5 fA/cm2 (Voc,impl 729 mV) for p+ POLO junctions. However, on alkaline textured surfaces, ~6 times higher J0 values are obtained. We compare ex-situ-doped poly-Si (intrinsically deposited and subsequently ion implanted) with in-situ-doped poly-Si layers. For POLO junctions formed on textured surfaces by utilizing wet chemical oxides and low-pressure chemical vapor deposition (LP-CVD) of 20 nm in-situ n+-doped poly-Si, we obtain J0 values down to 2.4 fA/cm2. Also with plasma-enhanced chemical vapor deposition (PE-CVD) of in-situ-doped amorphous Si and subsequent crystallization, we obtain comparable results. A transparent conductive oxide (TCO), preferably temperature stable, seems to be required to support the limited lateral conductivity of POLO junctions with poly-Si layer thicknesses ≤ 20 nm. We find that the conductivity of indium tin oxide (ITO) strongly decreases upon firing, while the initial conductivity can be maintained even for firing temperatures of 800°C when capping the ITO with a thin SiNx layer. Our recent cell precursors (156 mm 156 mm Cz n-type wafers with an n+ POLO junction on an alkaline textured front-side and a p+ POLO junction on a damage-etched rear-side) exhibit a promising Voc,impl value of 732 mV, and a total J0 value of the doped surfaces of 12 fA/cm2. In combination with the high pseudo fill factor of 85.3 % and with a short-circuit current density of 40 mA/cm2 as calculated by ray tracing simulations, the corresponding pseudo efficiency is 25.0 %.
6.
Y Larionova; R Peibst; M Turcu; S Reiter; R Brendel; D Tetzlaff; J Krügener; T Wietler; U Höhne; J -D Kähler
Optimization of p+ poly-Si/c-Si junctions on wet-chemically grown interfacial oxides and on different wafer morphologies Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 32nd European Photovoltaic Solar Energy Conference, S. 452-455, Munich, Germany, 2016, ISBN: 3-936338-41-8.
@inproceedings{Larionova2016,
title = {Optimization of p+ poly-Si/c-Si junctions on wet-chemically grown interfacial oxides and on different wafer morphologies},
author = {Y Larionova and R Peibst and M Turcu and S Reiter and R Brendel and D Tetzlaff and J Krügener and T Wietler and U Höhne and J -D Kähler},
editor = {WIP},
doi = {10.4229/EUPVSEC20162016-2CO.4.3},
isbn = {3-936338-41-8},
year = {2016},
date = {2016-09-01},
booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},
pages = {452-455},
address = {Munich, Germany},
abstract = {In this paper, we study the passivation quality of p-type poly-Si / c-Si junctions annealed at different temperatures. We evaluate wet-chemically grown (ozonized in DI-H2O) and thermally-grown interfacial oxides and compare boron ion implantation into intrinsic poly-Si with different doses to in situ p+ doping during the LPCVD Si deposition process. The experimental results show that decreasing the doping concentration of the p+ poly-Si layer and increasing the annealing temperature improve the passivation quality of the p+ poly-Si / c-Si junctions. Additionally, we explore the passivation quality of p-type poly-Si / c-Si junctions on different surface morphologies and orientations, i.e. on planar (100) and (111) as well as alkaline textured Si surfaces. Textured surfaces show a strongly increased J0e, possibly due to a worse p-type poly-Si passivation on (111) surfaces. The emitter saturation current density J0e of 8 fA/cm² achieved on planar (100) surfaces is the lowest value reported for p+ poly-Si / c-Si junctions with wet-chemically grown oxides so far.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
In this paper, we study the passivation quality of p-type poly-Si / c-Si junctions annealed at different temperatures. We evaluate wet-chemically grown (ozonized in DI-H2O) and thermally-grown interfacial oxides and compare boron ion implantation into intrinsic poly-Si with different doses to in situ p+ doping during the LPCVD Si deposition process. The experimental results show that decreasing the doping concentration of the p+ poly-Si layer and increasing the annealing temperature improve the passivation quality of the p+ poly-Si / c-Si junctions. Additionally, we explore the passivation quality of p-type poly-Si / c-Si junctions on different surface morphologies and orientations, i.e. on planar (100) and (111) as well as alkaline textured Si surfaces. Textured surfaces show a strongly increased J0e, possibly due to a worse p-type poly-Si passivation on (111) surfaces. The emitter saturation current density J0e of 8 fA/cm² achieved on planar (100) surfaces is the lowest value reported for p+ poly-Si / c-Si junctions with wet-chemically grown oxides so far.
7.
R Brendel; T Dullweber; R Peibst; C Kranz; A Merkle; D Walter
Breakdown of the efficiency gap to 29% based on experimental input data and modelling Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 31st European Photovoltaic Solar Energy Conference, S. 264-272, Hamburg, Germany, 2015, ISBN: 3-936338-39-6.
@inproceedings{Brendel2015,
title = {Breakdown of the efficiency gap to 29% based on experimental input data and modelling},
author = {R Brendel and T Dullweber and R Peibst and C Kranz and A Merkle and D Walter},
editor = {WIP},
doi = {10.4229/EUPVSEC20152015-2BP.1.2},
isbn = {3-936338-39-6},
year = {2015},
date = {2015-09-14},
booktitle = {Proceedings of the 31st European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 31st European Photovoltaic Solar Energy Conference},
pages = {264-272},
address = {Hamburg, Germany},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
8.
T Dullweber; C Kranz; R Peibst; U Baumann; H Hannebauer; A Fülle; S Steckemetz; T Weber; M Kutzer; M Müller; G Fischer; P Palinginis; D H Neuhaus
The PERC+ cell: a 21%-efficient industrial bifacial PERC solar cell Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 31st European Photovoltaic Solar Energy Conference, S. 341-350, Hamburg, Germany, 2015, ISBN: 3-936338-39-6.
@inproceedings{Dullweber2015,
title = {The PERC+ cell: a 21%-efficient industrial bifacial PERC solar cell},
author = {T Dullweber and C Kranz and R Peibst and U Baumann and H Hannebauer and A Fülle and S Steckemetz and T Weber and M Kutzer and M Müller and G Fischer and P Palinginis and D H Neuhaus},
editor = {WIP},
doi = {10.4229/EUPVSEC20152015-2BO.4.3},
isbn = {3-936338-39-6},
year = {2015},
date = {2015-09-14},
booktitle = {Proceedings of the 31st European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 31st European Photovoltaic Solar Energy Conference},
pages = {341-350},
address = {Hamburg, Germany},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
9.
F Lottspeich; M Müller; M Schuchart; T Dullweber; G Fischer; E Schneiderlöchner
Investigation of rear contact resistance of line contacted industrial PERC solar cells Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 31st European Photovoltaic Solar Energy Conference, S. 485-488, Hamburg, Germany, 2015, ISBN: 3-936338-39-6.
@inproceedings{Lottspeich2015,
title = {Investigation of rear contact resistance of line contacted industrial PERC solar cells},
author = {F Lottspeich and M Müller and M Schuchart and T Dullweber and G Fischer and E Schneiderlöchner},
editor = {WIP},
doi = {10.4229/EUPVSEC20152015-2DO.3.5},
isbn = {3-936338-39-6},
year = {2015},
date = {2015-09-14},
booktitle = {Proceedings of the 31st European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 31st European Photovoltaic Solar Energy Conference},
pages = {485-488},
address = {Hamburg, Germany},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
10.
B Lim; T Brendemühl; M Berger; A Christ; T Dullweber
n-PERT backjunction solar cells: an option for the next industrial technology generation? Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 29th European Photovoltaic Solar Energy Conference, S. 661-665, Amsterdam, The Netherlands, 2014, ISBN: 3-936338-34-5.
@inproceedings{Lim2014,
title = {n-PERT backjunction solar cells: an option for the next industrial technology generation?},
author = {B Lim and T Brendemühl and M Berger and A Christ and T Dullweber},
editor = {WIP},
doi = {10.4229/EUPVSEC20142014-2DO.4.6},
isbn = {3-936338-34-5},
year = {2014},
date = {2014-09-01},
booktitle = {Proceedings of the 29th European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 29th European Photovoltaic Solar Energy Conference},
pages = {661-665},
address = {Amsterdam, The Netherlands},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
11.
B Veith-Wolf; J Wang; M Hannu-Kuure; N Chen; A Hadzic; P Williams; J Leivo; A Karkkainen; J Schmidt
Siloxane-based capping layers for Al2O3 as silicon nitride replacement in industrial-type PERC solar cells Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 29th European Photovoltaic Solar Energy Conference, S. 600-602, Amsterdam, The Netherlands, 2014, ISBN: 3-936338-34-5.
@inproceedings{Veith-Wolf2014,
title = {Siloxane-based capping layers for Al2O3 as silicon nitride replacement in industrial-type PERC solar cells},
author = {B Veith-Wolf and J Wang and M Hannu-Kuure and N Chen and A Hadzic and P Williams and J Leivo and A Karkkainen and J Schmidt},
editor = {WIP},
doi = {10.4229/EUPVSEC20142014-2DO.2.2},
isbn = {3-936338-34-5},
year = {2014},
date = {2014-09-01},
booktitle = {Proceedings of the 29th European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 29th European Photovoltaic Solar Energy Conference},
pages = {600-602},
address = {Amsterdam, The Netherlands},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
12.
T Dullweber; H Hannebauer; U Baumann; T Falcon; K Bothe; S Steckemetz; R Brendel
Fine-line printed 5 busbar PERC solar cells with conversion efficiencies beyond 21% Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 29th European Photovoltaic Solar Energy Conference, S. 621-626, Amsterdam, The Netherlands, 2014, ISBN: 3-936338-34-5.
@inproceedings{Dullweber2014,
title = {Fine-line printed 5 busbar PERC solar cells with conversion efficiencies beyond 21%},
author = {T Dullweber and H Hannebauer and U Baumann and T Falcon and K Bothe and S Steckemetz and R Brendel},
editor = {WIP},
doi = {10.4229/EUPVSEC20142014-2DO.3.4},
isbn = {3-936338-34-5},
year = {2014},
date = {2014-09-01},
booktitle = {Proceedings of the 29th European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 29th European Photovoltaic Solar Energy Conference},
pages = {621-626},
address = {Amsterdam, The Netherlands},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
13.
C Kranz; S Wyczanowski; S Dorn; K Weise; C Klein; K Bothe; T Dullweber; R Brendel
Impact of the rear surface roughness on industrial-type PERC solar cells Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 27th European Photovoltaic Solar Energy Conference, S. 557-560, Frankfurt, Germany, 2012, ISBN: 3-936338-28-0.
@inproceedings{Kranz2012,
title = {Impact of the rear surface roughness on industrial-type PERC solar cells},
author = {C Kranz and S Wyczanowski and S Dorn and K Weise and C Klein and K Bothe and T Dullweber and R Brendel},
editor = {WIP},
doi = {10.4229/27thEUPVSEC2012-2AO.1.5},
isbn = {3-936338-28-0},
year = {2012},
date = {2012-09-01},
booktitle = {Proceedings of the 27th European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 27th European Photovoltaic Solar Energy Conference},
pages = {557-560},
address = {Frankfurt, Germany},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
14.
T Dullweber; M Siebert; B Veith; C Kranz; J Schmidt; R Brendel; B F P Roos; T Dippell; A Schwabedissen; S Peters
High-efficiency industrial-type PERC solar cells applying ICP AlOx as rear passivation layer Proceedings Article
In: WIP, (Hrsg.): Proceedings of the 27th European Photovoltaic Solar Energy Conference, S. 672-675, Frankfurt, Germany, 2012, ISBN: 3-936338-28-0.
@inproceedings{Dullweber2012,
title = {High-efficiency industrial-type PERC solar cells applying ICP AlOx as rear passivation layer},
author = {T Dullweber and M Siebert and B Veith and C Kranz and J Schmidt and R Brendel and B F P Roos and T Dippell and A Schwabedissen and S Peters},
editor = {WIP},
doi = {10.4229/27thEUPVSEC2012-2BO.7.4},
isbn = {3-936338-28-0},
year = {2012},
date = {2012-09-01},
booktitle = {Proceedings of the 27th European Photovoltaic Solar Energy Conference},
journal = {Proceedings of the 27th European Photovoltaic Solar Energy Conference},
pages = {672-675},
address = {Frankfurt, Germany},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
15.
T Dullweber; S Gatz; H Hannebauer; T Falcon; R Hesse; J Schmidt; R Brendel
19.4% -Efficient Large Area Rear-Passivated Screen-Printed Silicon Solar Cells Proceedings Article
In: WIP, (Hrsg.): 26th European Photovoltaic Solar Energy Conference and Exhibition, S. 811-816, Hamburg, Germany, 2011, ISBN: 3-936338-27-2.
@inproceedings{Dullweber2011,
title = {19.4% -Efficient Large Area Rear-Passivated Screen-Printed Silicon Solar Cells},
author = {T Dullweber and S Gatz and H Hannebauer and T Falcon and R Hesse and J Schmidt and R Brendel},
editor = {WIP},
doi = {10.4229/26thEUPVSEC2011-2BP.1.4},
isbn = {3-936338-27-2},
year = {2011},
date = {2011-09-01},
booktitle = {26th European Photovoltaic Solar Energy Conference and Exhibition},
pages = {811-816},
address = {Hamburg, Germany},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}