1.
W E McMahon; H Schulte-Huxel; J Buencuerpo; J F Geisz; M S Young; T R Klein; A C Tamboli; E L Warren
In: IEEE Journal of Photovoltaics, Bd. 11, Nr. 4, S. 1078-1086, 2021.
@article{McMahon2021,
title = {Homogenous Voltage-Matched Strings Using Three-Terminal Tandem Solar Cells: Fundamentals and End Losses},
author = {W E McMahon and H Schulte-Huxel and J Buencuerpo and J F Geisz and M S Young and T R Klein and A C Tamboli and E L Warren},
doi = {10.1109/JPHOTOV.2021.3068325},
year = {2021},
date = {2021-07-01},
journal = {IEEE Journal of Photovoltaics},
volume = {11},
number = {4},
pages = {1078-1086},
abstract = {Strings constructed from three-terminal tandem (3TT) solar cells offer the performance benefits of voltage-matching (which reduces sensitivity to spectral variation), but without the subcell voltage isolation required by four-terminal cells. However, the circuitry for a 3TT string can become complex, making circuit analysis more challenging. Here, we illustrate the essential features of “homogenous” voltage-matched (VM) 3TT strings, for which all 3TT cells in the string are nominally identical (with the same design/doping sequence, such that they can be fabricated on the same manufacturing line). Several representative VM string configurations are explicitly considered, and used to describe the general construction of string I(V) curves. End losses intrinsic to these strings are discussed in detail, along with mitigation strategies to minimize their impact. Our analysis agrees with experimental results for eight-cell strings constructed from GaInP/GaAs 3TT devices.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Strings constructed from three-terminal tandem (3TT) solar cells offer the performance benefits of voltage-matching (which reduces sensitivity to spectral variation), but without the subcell voltage isolation required by four-terminal cells. However, the circuitry for a 3TT string can become complex, making circuit analysis more challenging. Here, we illustrate the essential features of “homogenous” voltage-matched (VM) 3TT strings, for which all 3TT cells in the string are nominally identical (with the same design/doping sequence, such that they can be fabricated on the same manufacturing line). Several representative VM string configurations are explicitly considered, and used to describe the general construction of string I(V) curves. End losses intrinsic to these strings are discussed in detail, along with mitigation strategies to minimize their impact. Our analysis agrees with experimental results for eight-cell strings constructed from GaInP/GaAs 3TT devices.