1.
F Haase; B Lim; A Merkle; T Dullweber; R Brendel; C Günther; M H Holthausen; C Mader; O Wunnicke; R Peibst
Printable liquid silicon for local doping of solar cells Artikel
In: Solar Energy Materials and Solar Cells, Bd. 179, S. 129-135, 2018, ISSN: 0927-0248.
@article{Haase2017b,
title = {Printable liquid silicon for local doping of solar cells},
author = {F Haase and B Lim and A Merkle and T Dullweber and R Brendel and C Günther and M H Holthausen and C Mader and O Wunnicke and R Peibst},
doi = {10.1016/j.solmat.2017.11.003},
issn = {0927-0248},
year = {2018},
date = {2018-06-01},
journal = {Solar Energy Materials and Solar Cells},
volume = {179},
pages = {129-135},
abstract = {We demonstrate the application of a liquid-processed doped silicon precursor as a doping source for the fabrication of interdigitated back contact solar cells. We integrate phosphorus- as well as boron-doped liquid silicon in our n-type interdigitated back contact cell process based on laser-structuring. The cell with the phosphorus back surface field from liquid silicon has an efficiency of 20.9% and the cell with the boron emitter from liquid silicon has an efficiency of 21.9%. We measure saturation current densities of 34fAcm−2 on phosphorus-doped layers with a sheet resistance of 108Ω/sq and 18fAcm−2 on boron-doped layers with a sheet resistance of 140Ω/sq using passivated test samples.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We demonstrate the application of a liquid-processed doped silicon precursor as a doping source for the fabrication of interdigitated back contact solar cells. We integrate phosphorus- as well as boron-doped liquid silicon in our n-type interdigitated back contact cell process based on laser-structuring. The cell with the phosphorus back surface field from liquid silicon has an efficiency of 20.9% and the cell with the boron emitter from liquid silicon has an efficiency of 21.9%. We measure saturation current densities of 34fAcm−2 on phosphorus-doped layers with a sheet resistance of 108Ω/sq and 18fAcm−2 on boron-doped layers with a sheet resistance of 140Ω/sq using passivated test samples.