@inproceedings{Rienäcker2017,

title = {Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies of 31.5 % and 35.4 %},

author = {M Rienäcker and M Schnabel and E Warren and A Merkle and H Schulte-Huxel and T R Klein and M F A M Hest and M A Steiner and J Geisz and S Kajari-Schröder and R Niepelt and J Schmidt and R Brendel and P Stradins and A Tamboli and R Peibst},

editor = {WIP},

doi = {10.4229/EUPVSEC20172017-1AP.1.2},

isbn = {3-936338-47-7},

year  = {2017},

date = {2017-09-25},

booktitle = {Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition},

pages = {1-4},

address = {Amsterdam, The Netherlands},

abstract = {The theoretical efficiency limit of 29.4 % for single-junction crystalline Silicon (c-Si) solar cells is an insurmountable barrier that is being steadily approached within the last decades. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP//Si dual-junction cell with an in-house measured efficiency of 31.5 % and a GaInP/GaAs//Si triple-junction cell with a certified efficiency of 35.4±0.5 %},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}