@article{Steckenreiter2017b,

title = {Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity},

author = {V Steckenreiter and D C Walter and J Schmidt},

doi = {10.1063/1.4978266},

year  = {2017},

date = {2017-03-01},

journal = {AIP Advances},

volume = {7},

number = {3},

pages = {035305},

abstract = {Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While at low illumination intensities, a linear increase of Rde on I is measured, at high illumination intensities, Rde seems to saturate. We are able to explain the saturation by assuming that Rde increases proportionally with the excess carrier concentration Δn and take the fact into account that at sufficiently high illumination intensities, the carrier lifetime decreases with increasing Δn and hence the slope of Δn(I) decreases, leading to an apparent saturation. Importantly, on low-lifetime Cz-Si samples no saturation of the deactivation rate constant is observed for the same illumination intensities, proving that the deactivation is stimulated by the presence of excess electrons and not directly by the photons.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Werner2014b,

title = {Manipulating the negative fixed charge density at the c-Si/Al2O3 interface},

author = {F Werner and J Schmidt},

doi = {10.1063/1.4867652},

year  = {2014},

date = {2014-03-01},

journal = {Applied Physics Letters},

volume = {104},

number = {9},

pages = {091604},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Wagner2014,

title = {A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells},

author = {H Wagner and T Ohrdes and A Dastgheib-Shirazi and B Puthen-Veettil and D König and P P Altermatt},

doi = {10.1063/1.4863464},

year  = {2014},

date = {2014-01-01},

journal = {Journal of Applied Physics},

volume = {115},

number = {4},

pages = {044508},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Werner2012b,

title = {Interface recombination parameters of atomic-layer-deposited Al2O3 on crystalline silicon,},

author = {F Werner and A Cosceev and J Schmidt},

doi = {10.1063/1.3700241},

year  = {2012},

date = {2012-04-01},

journal = {Journal of Applied Physics},

volume = {111},

number = {7},

pages = {073710},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Rougieux2011b,

title = {Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon},

author = {F E Rougieux and B Lim and J Schmidt and M Forster and D Macdonald and A Cuevas},

doi = {10.1063/1.3633492},

year  = {2011},

date = {2011-09-01},

journal = {Journal of Applied Physics},

volume = {110},

number = {6},

pages = {063708},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Werner2011,

title = {Electronic and chemical properties of the c-Si/Al2O3 interface},

author = {F Werner and B Veith and D Zielke and L Kühnemund and C Tegenkamp and M Seibt and R Brendel and J Schmidt},

doi = {10.1063/1.3587227},

year  = {2011},

date = {2011-06-01},

journal = {Journal of Applied Physics},

volume = {109},

number = {11},

pages = {113701},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Werner2010,

title = {Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide},

author = {F Werner and B Veith and V Tiba and P Poodt and F Roozeboom and R Brendel and J Schmidt},

doi = {10.1063/1.3505311},

year  = {2010},

date = {2010-10-01},

journal = {Applied Physics Letters},

volume = {97},

number = {16},

pages = {162103},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Harder2010,

title = {Trapping-related recombination of charge carriers in silicon},

author = {N P Harder and R Gogolin and R Brendel},

doi = {10.1063/1.3490240},

year  = {2010},

date = {2010-09-01},

journal = {Applied Physics Letters},

volume = {97},

number = {11},

pages = {112111},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Ramspeck2009b,

title = {Combined dynamic and steady-state infrared camera based carrier lifetime imaging of silicon wafers},

author = {K Ramspeck and K Bothe and J Schmidt and R Brendel},

doi = {10.1063/1.3261733},

year  = {2009},

date = {2009-12-01},

journal = {Journal of Applied Physics},

volume = {106},

number = {11},

pages = {114506},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Ramspeck2008b,

title = {Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach},

author = {K Ramspeck and S Reissenweber and J Schmidt and K Bothe and R Brendel},

doi = {10.1063/1.2972122},

year  = {2008},

date = {2008-09-01},

journal = {Applied Physics Letters},

volume = {93},

number = {10},

pages = {102104},

keywords = {},

pubstate = {published},

tppubtype = {article}

}