R Peibst; C Schwarz; Y Larionova; S Wolter; M Rienäcker; T Wietler; M Diederich; R Brendel
Interface between Poly-Si on Oxide Passivated Si Bottom and Perovskite Top Cells – Search for the Leanest and Best Working Layer Stack Proceedings Article
In: Proceedings of the 8th World Conference on Photovoltaic Energy Conversion, S. 255 - 259, Milano, Italy, 2022.
@inproceedings{R Peibst2022,
title = {Interface between Poly-Si on Oxide Passivated Si Bottom and Perovskite Top Cells – Search for the Leanest and Best Working Layer Stack},
author = {R Peibst and C Schwarz and Y Larionova and S Wolter and M Rienäcker and T Wietler and M Diederich and R Brendel },
doi = {10.4229/WCPEC-82022-2CO.1.2},
year = {2022},
date = {2022-12-12},
urldate = {2022-12-12},
booktitle = {Proceedings of the 8th World Conference on Photovoltaic Energy Conversion},
pages = {255 - 259},
address = {Milano, Italy},
abstract = {Regarding the interface between Si bottom cells with poly-Si on oxide (POLO) junctions as the uppermost layer and the lowest layer of a perovskite (Pk) top cell (i.e., the hole-selective layer HTL in pin configuration), many questions are still open, including the one which layers are actually required for low-resistive subcell interconnection. In this work, we compare recombination-layer (RL) and tunneling junction (TJ) - based subcell interconnection schemes, namely spiro-TTB/n+ poly-Si, spiro-TTB/p+ poly-Si/n+ poly-Si, and spiro-TTB/ITO/n+ poly-Si. The first is – to our knowledge for the first time – investigated experimentally. We prepare dedicated Pk/Si test structures, which are opaque co-evaporated MAPbI3 top cells on Si substrates with the uppermost layers of interest. DarkIV and frequency-dependent impedance measurements are applied. We reveal an upper limit for the contact resistance of 14 mΩcm2 for the p+ poly-Si / n poly-Si tunnel junction with Cox&Strack measurements. We observe a reduction of the current densities measured on our Pk/Si test structures upon biasing at more than 1 V, that stabilizes at a factor of ~1/300 for the spiro-TTB/ITO and of ~ 1/10 for both spiro-TTB/poly-Si interfaces as compared to the initial measurement. After stabilization, our IV measurements show that the spiro-TTB/n+ poly-Si recombination junction conducts comparable current densities as the spiro-TTB/p+ poly-Si interface. Within a framework of a three-element equivalent circuit for impedance measurements, the spiro-TTB/X interface affects the voltage dependent parallel resistance. The comparable current densities for the spiro-TTB/n+ poly-Si and the spiro-TTB/p+ poly-Si interface gives hope that n+-type poly-Si can indeed work as a recombination layer itself, although we did not succeed in a quantification of the specific resistance of the spiro-TTB/X interface. This indication has to be verified on full tandem cells. },
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
S Baumann
Influence of an Encapsulation Process with Conventional Temperatures on MAPbI3 Perovskite Solar Cells Vortrag
Online Event, 26.05.2021, (HOPV21 - 13th International Conference on Hybrid and Organic Photovoltaics).
@misc{Baumann2021b,
title = {Influence of an Encapsulation Process with Conventional Temperatures on MAPbI3 Perovskite Solar Cells},
author = {S Baumann},
year = {2021},
date = {2021-05-26},
address = {Online Event},
note = {HOPV21 - 13th International Conference on Hybrid and Organic Photovoltaics},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
M Diederich
Modelling Perovskites with Reduced Absorption from Reflection Measurements of Perovskite Solar Cells Vortrag
Online Event, 26.05.2021, (HOPV21 - 13th International Conference on Hybrid and Organic Photovoltaics).
@misc{Diederich2021,
title = {Modelling Perovskites with Reduced Absorption from Reflection Measurements of Perovskite Solar Cells},
author = {M Diederich},
year = {2021},
date = {2021-05-26},
address = {Online Event},
note = {HOPV21 - 13th International Conference on Hybrid and Organic Photovoltaics},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
S Baumann
Influence of Encapsulation Process Temperature on the Performance of Perovskite Mini Modules Vortrag
Online Event, 20.04.2021, (SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics).
@misc{Baumann2021,
title = {Influence of Encapsulation Process Temperature on the Performance of Perovskite Mini Modules},
author = {S Baumann},
year = {2021},
date = {2021-04-20},
address = {Online Event},
note = {SiliconPV 2021 - 11th International Conference on Silicon Photovoltaics},
keywords = {},
pubstate = {published},
tppubtype = {presentation}
}
S Kajari-Schröder
Contain the lead Artikel
In: Nature Energy, Bd. 4, Nr. 7, S. 534–535, 2019.
@article{Kajari-Schröder2019,
title = {Contain the lead},
author = {S Kajari-Schröder},
doi = {10.1038/s41560-019-0414-2},
year = {2019},
date = {2019-06-17},
journal = {Nature Energy},
volume = {4},
number = {7},
pages = {534–535},
abstract = {Lead in perovskite solar cells is a potential environmental and health hazard if it is released from accidentally damaged panels. Now, the encapsulation of perovskite solar cells with self-healing polymers is shown to significantly reduce the risk of lead leakage from hail impact under a variety of weather conditions.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}